Abstract: The system, method, and computer program product described herein provide unified real-time rule analytics to users through the use of an analytics logic editor that allows a user to construct an analytic logic rule unit that may be used on both edge and cloud devices. The user may select a data source, transform, rule condition, and action using an interface of the analytics logic editor to construct an analytics logic rule unit that may be deployed to both edge and cloud devices in real-time without the need to separately program each device. The analytics logic rule unit may be installed and executed by the edge and cloud device in real-time.

Abstract: The system, method, and computer program product described herein provide unified real-time rule analytics to users through the use of an analytics logic editor that allows a user to construct an analytic logic rule unit that may be used on both edge and cloud devices. The user may select a data source, transform, rule condition, and action using an interface of the analytics logic editor to construct an analytics logic rule unit that may be deployed to both edge and cloud devices in real-time without the need to separately program each device. The analytics logic rule unit may be installed and executed by the edge and cloud device in real-time.

Abstract: Embodiments for environmental control of a vehicle by a processor. An environmental change in the vehicle is predictively anticipated by monitoring at least one environmental factor over time. In response to the predicted environmental change, a physical change is caused in a constituent portion of an assembly inclusive of an external surface of the vehicle, which when activated compensates for the predicted environmental change.

Abstract: The disclosure is directed to methods and systems for modifying a vehicle periphery. These methods and systems include receiving a notification that an attachment is placed on the vehicle, detecting, with one or more sensors located in or on the vehicle, the location and size of the attachment on the vehicle, forming an attachment periphery of the attachment's size and location, forming a representation of the attachment periphery relative to the vehicle periphery and monitoring, with the one or more sensors, the surroundings of the vehicle to determine if an obstacle is within a predetermined distance of the attachment periphery or the vehicle periphery.

Abstract: Disclosed aspects relate to food freshness management. A freshness triggering event may be identified for a food item. The freshness triggering event may indicate that a criterion related to the food item has been achieved. A food freshness management action may be determined. The food freshness management action may be determined to respond to the freshness triggering event for the food item. The food freshness management action may be initiated. The food freshness management action may be carried-out with respect to the freshness triggering event for the food item.

Abstract: Disclosed aspects relate to food freshness management. A freshness triggering event may be identified for a food item. The freshness triggering event may indicate that a criterion related to the food item has been achieved. A food freshness management action may be determined. The food freshness management action may be determined to respond to the freshness triggering event for the food item. The food freshness management action may be initiated. The food freshness management action may be carried-out with respect to the freshness triggering event for the food item.

Abstract: A computer-implemented method of processing a data query, includes in an edge device, processing a subquery of the data query, storing first statistical data on the subquery, and analyzing the first statistical data to optimize a parameter for processing subqueries.

Abstract: Embodiments for environmental control of a vehicle by a processor. An environmental change in the vehicle is predictively anticipated by monitoring at least one environmental factor over time. In response to the predicted environmental change, a physical change is caused in a constituent portion of an assembly inclusive of an external surface of the vehicle, which when activated compensates for the predicted environmental change.

Abstract: Embodiments include method, systems and computer program products for normalizing user responses to events. Aspects include receiving, by a processor, an indication of a level of satisfaction associated with an interaction by a user; receiving, by the processor, user data for the user; analyzing the user data to generate a normalized value of emotions of the user; and applying the normalized value to the indication of the level of satisfaction to generate a normalized level of satisfaction of the user associated with the interaction by the user.

Abstract: A method for augmenting a review. The method includes accessing a review database and a particular review of an object. Providing a reviewer profile including a plurality of reviewer attributes and analyzing the reviewer attributes to determine a rationale for the review.

Abstract: A system for executing action feedback is provided. The system includes a wearable device that includes a sensor for monitoring a user and generation of user data based on the monitoring, a first networked device coupled to a network and controllable by the user for taking an action and a second networked device coupled to the network. The second networked device is configured to determine whether the user data suggests that the user is experiencing a personal condition of concern and is taking an action with respect to the first networked device and to interrupt a taking of a portion of the action based on the portion of the action being compromised by at least one of the personal condition of concern and characteristics of social networks of the user.

Abstract: One or more information for printing associated with one or more users is determined. One or more printers having one or more physical media associated with the one or more printers is determined. A first indication is received from a user of the one or more users to print the one or more information associated with the user. An order of the one or more information to be printed on the one or more physical media is determined. The order minimizes the usage of space on the one or more physical media.

Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

Abstract: A semiconductor structure including a p-channel field effect transistor (pFET) device located on a surface of a silicon germanium (SiGe) channel is provided in which the junction profile of the source/drain region is abrupt. The abrupt source/drain junctions for pFET devices are provided by forming an N- or C-doped Si layer directly beneath a SiGe channel layer which is located above a Si substrate. A structure is provided in which the N- or C-doped Si layer (sandwiched between the SiGe channel layer and the Si substrate) has approximately the same diffusion rate for a p-type dopant as the overlying SiGe channel layer. Since the N- or C-doped Si layer and the overlying SiGe channel layer have substantially the same diffusivity for a p-type dopant and because the N- or C-doped Si layer retards diffusion of the p-type dopant into the underlying Si substrate, abrupt source/drain junctions can be formed.

Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

Abstract: A semiconductor structure including a p-channel field effect transistor (pFET) device located on a surface of a silicon germanium (SiGe) channel is provided in which the junction profile of the source/drain region is abrupt. The abrupt source/drain junctions for pFET devices are provided by forming an N- or C-doped Si layer directly beneath a SiGe channel layer which is located above a Si substrate. A structure is provided in which the N- or C-doped Si layer (sandwiched between the SiGe channel layer and the Si substrate) has approximately the same diffusion rate for a p-type dopant as the overlying SiGe channel layer. Since the N- or C-doped Si layer and the overlying SiGe channel layer have substantially the same diffusivity for a p-type dopant and because the N- or C-doped Si layer retards diffusion of the p-type dopant into the underlying Si substrate, abrupt source/drain junctions can be formed.

Abstract: An improved SRAM and fabrication method are disclosed. The method comprises use of a nitride layer to encapsulate PFETs and logic NFETs, protecting the gates of those devices from oxygen exposure. NFETs that are used in the SRAM cells are exposed to oxygen during the anneal process, which alters the effective work function of the gate metal, such that the threshold voltage is increased, without the need for increasing the dopant concentration, which can adversely affect issues such as mismatch due to random dopant fluctuation, GIDL and junction leakage.

Abstract: An improved SRAM and fabrication method are disclosed. The method comprises use of a nitride layer to encapsulate PFETs and logic NFETs, protecting the gates of those devices from oxygen exposure. NFETs that are used in the SRAM cells are exposed to oxygen during the anneal process, which alters the effective work function of the gate metal, such that the threshold voltage is increased, without the need for increasing the dopant concentration, which can adversely affect issues such as mismatch due to random dopant fluctuation, GIDL and junction leakage.

Abstract: A semiconductor structure including a p-channel field effect transistor (pFET) device located on a surface of a silicon germanium (SiGe) channel is provided in which the junction profile of the source region and the drain region is abrupt. The abrupt source/drain junctions for pFET devices are provided in this disclosure by forming an N- or C-doped Si layer directly beneath a SiGe channel layer which is located above a Si substrate. A structure is thus provided in which the N- or C-doped Si layer (sandwiched between the SiGe channel layer and the Si substrate) has approximately the same diffusion rate for a p-type dopant as the overlying SiGe channel layer. Since the N- or C-doped Si layer and the overlying SiGe channel layer have substantially the same diffusivity for a p-type dopant and because the N- or C-doped Si layer retards diffusion of the p-type dopant into the underlying Si substrate, abrupt source/drain junctions can be formed.

Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.