Abstract: A resection apparatus includes a handle body, a catheter communicating with the handle body, and a cutter head assembly disposed at a distal end of the catheter. A steering assembly is disposed on the catheter and includes a first steering point and a second steering point which are disposed on the catheter, and a steering connector for connecting the first steering point and the second steering point. A control assembly for controlling the steering assembly is disposed on the handle body. The bending radius of the catheter at the distal end is adjusted by means of the steering assembly, so that the catheter is shifted towards a predetermined direction; the orientation of the cutter head assembly is controlled, so as to reduce a risk of scraping and perforating a blood vessel, and the ideal blood vessel diameter can be obtained by means of multiple resections.

Abstract: Provided are a high-plasticity dual-phase high-entropy alloy (HEA) and a preparation method thereof. The high-plasticity dual-phase HEA has a chemical formula as shown in Formula I: (FeCoNiCr)100-xTix (Formula I), in which, x is in a range of 2.0 to 2.8. A method for preparing the high-plasticity dual-phase HEA is also provided.

Abstract: In one embodiment, a system comprises: a processor to execute a native operating system (OS); and an interface circuit coupled to the processor, the interface circuit configured to tunnel communications of a plurality of tunneled protocols, the interface circuit to couple to at least one device via a first tunneled protocol, where a connection manager for the interface circuit is to execute in a user space of the native OS. Other embodiments are described and claimed.

Abstract: Self-cooling semiconductor resistor and manufacturing method thereof are provided. The resistor comprises: multiple N-type and P-type wells in a semiconductor substrate, first polysilicon gates on each N-type well, second polysilicon gates on each P-type well, and metal interconnect layers. The multiple N-type and P-type wells are arranged alternately in row and column direction, respectively. N-type and P-type deep doped regions are formed on each N-type and P-type well, respectively. The first and second polysilicon gates are N-type and P-type deep doped respectively, and there is no gate oxide layer between the first and second polysilicon gates and the semiconductor substrate. The metal interconnect layers connect the multiple first and second polysilicon gates as an S-shaped structure. In the present application, the flow direction of heat is from the inside of the resistor to its surface, thereby realizing heat dissipation and cooling.

Abstract: This application relates to the field of operating systems, and relates to an electronic device and an application display method and a medium thereof. The application display method includes: A first system and a second system are run on the electronic device. The second system receives, from the first system, display data of a plurality of application windows and data identifiers of all the display data. The second system sends, based on window identifiers of the application windows corresponding to all the display data, all the display data to rendering tasks of the application windows corresponding to all the display data for rendering respectively, to obtain rendered images of all the display data. The second system displays, on a screen of the electronic device, the rendered images of all the display data on the application windows respectively corresponding to all the display data.

Abstract: An electrostatic discharge and electrical overstress detection circuit includes protection circuit, sensing circuit, clamp circuit, several stages of sampling logic circuits connected in sequence and storage circuit. Protection circuit is coupled between input/output pin and internal chip and discharges to a power supply terminal when the electrostatic discharge or electrical overstress events happen. Sensing circuit and clamp circuit are coupled between power supply terminal and ground terminal. Each stage of sampling logic circuit is coupled to power supply terminal and memory cell of storage circuit, and the first stage of sampling logic is coupled to the clamp circuit, and when the electrostatic discharge or electrical overstress events happen, the several stages of sampling logic circuits sample voltage of the power supply terminal one by one and change state of corresponding memory cell, so that the electrostatic discharge or electrical overstress events are successively recorded by the memory cell.

Abstract: On-chip peltier cooling devices and manufacturing methods thereof are provided. The device comprises: a first type well, a polysilicon gate and dummy gates, first type doped regions, a second type doped region, a first and second via. The dummy gate is formed as a two-segment structure with an interval, and there is no gate oxide layer between portions of the dummy gate which are far away from the interval and the semiconductor substrate. The first type doped region at least overlaps with an orthographic projection region of the first segment of the dummy gate on the semiconductor substrate. The second type doped region at least overlaps with orthographic projection regions of the polysilicon gate and the second segment of the dummy gate on the semiconductor substrate. In this application, the heat flows from inside of the device to its surface, to realize heat dissipation and cooling.

Abstract: The invention relates to a PC resin material with a neutral filtering effect, and a preparation method therefor and the use thereof. The PC resin material with a neutral filtering effect provided in the present invention comprises polycarbonate, an antioxidant, a dispersing agent and an additive. The PC resin material with a neutral filtering effect provided in embodiments of the present invention has a flat transmittance curve at a spectral band of 400-1000 nm, a better neutral filtering effect and the advantages of easy machinability and low costs, and can be widely applied to the preparation of optical products.

Abstract: The present application describes process for preparing an ortho-allylated hydroxy aryl compounds such as compounds of Formula (I) by reacting an allylic alcohol with a hydroxy aryl compound in the presence of aluminum compound selected from alumina and aluminum alkoxides and in a non-protic solvent wherein at least one carbon atom ortho to the hydroxy group in the hydroxy aryl compound is unsubstituted.

Abstract: There is included a method and apparatus comprising computer code for generating enhanced target speech from audio data, performed by a computing device, the method comprising: receiving audio data corresponding to one or more speakers; generating estimated an target speech, an estimated noise, and an estimated echo simultaneously based on the audio data using a jointly trained complex ratio mask; predicting frame-level multi-tap time-frequency (T-F) spatio-temporal-echo filter weights based on the estimated target speech, the estimated noise, and the estimated echo using a trained neural network model; and predicting enhanced target speech based on the frame-level multi-tap T-F spatio-temporal-echo filter weights.

Abstract: The present disclosure provides a high-entropy alloy (HEA) with room-temperature superplasticity and a preparation method thereof, belonging to the field of metal materials. In the present disclosure, the HEA with room-temperature superplasticity has a chemical formula shown in Formula I: (FeCoNiCr)100-xCux (Formula I), where in Formula I, x is 2.0 to 4.0. A FeCoNiCr alloy is used as a matrix, and then added with a trace amount of a Cu element, thereby significantly reducing formation of a metastable phase in the FeCoNiCr alloy while reducing stacking fault energy of the alloy, such that the alloy maintains a desirable work hardening ability and achieves an excellent elongation at break. Moreover, a plasticity of the alloy is further improved through twinning-induced plasticity (TWIP).

Abstract: Integrated cooling device based on Peltier effect and manufacturing method thereof are provided. The device comprises one or more first heat dissipation structures around a device area. Each first heat dissipation structure comprises first N-type deep doped regions and first P-type deep doped regions arranged alternately, first vias, and first metal interconnection layers. The first vias are respectively located on two ends of each first N-type and each first P-type deep doped region. The first metal interconnect layers connect the first vias and such that the first heat dissipation structures are connected as a first S-shaped structure. When the first S-shaped structure is turned on, heat in the first N-type deep doped regions and the first P-type deep doped regions flows from a side close to the device area to its other side away from the device area, so as to realize heat dissipation in the device area.

Abstract: Provided herein are novel synthetic compounds having the structure of formula (1), wherein X is a substituted or unsubstituted aromatic or heteroaromatic mono- or polycyclic ring system; and Y is substituted or unsubstituted C5-C10 alkyl or alkenyl group, or a pharmaceutically acceptable salt thereof. Also provided are pharmaceutical compositions. The compounds and pharmaceutical compositions are useful for inhibiting growth of a bacterium.

Abstract: A speech synthesis method an includes: obtaining a target phoneme of a target user and a timbre identifier of the target user, the target phoneme being determined based on a target text; inputting the target phoneme into a first submodel of a speech synthesis model, to obtain a target phonetic posteriorgram of the target phoneme, the target phonetic posteriorgram reflecting features of phonemes in the target phoneme and pronunciation duration features of phonemes in the target phoneme; and inputting the target phonetic posteriorgram and the timbre identifier into a second submodel of the speech synthesis model, to obtain target speech corresponding to the target text and the timbre identifier, the second submodel being configured to predict the target phonetic posteriorgram and a predicted intermediate variable of the target speech, and the predicted intermediate variable reflecting a frequency domain feature of the target speech.

Abstract: The present application describes process for preparing an ortho-allylated hydroxy aryl compounds such as compounds of Formula (1) by reacting an allylic alcohol with a hydroxy aryl compound in the presence of aluminum compound selected from alumina and aluminum alkoxides and in a non-protic solvent wherein at least one carbon atom ortho to the hydroxy group in the hydroxy aryl compound is unsubstituted. The present application also includes compounds of Formula (1).

Abstract: A fin structure includes an inlet fin assembly and an outlet fin assembly. The inlet fin assembly includes a plurality of inlet fins arranged side by side, and a first air channel is formed between two of the plurality of inlet fins that are adjacent to each other. The outlet fin assembly includes a plurality of outlet fins arranged side by side, and a second air channel is formed between two of the plurality of outlet fins that are adjacent to each other. The inlet fin assembly is connected to the outlet fin assembly, and the plurality of first air channels are in fluid communication with the plurality of second air channels. A thermal conductivity of the inlet fin assembly is greater than a thermal conductivity of the outlet fin assembly.

Abstract: A method of acoustic echo suppression using a recurrent neural network, performed by at least one processor, is provided. The method includes receiving a microphone signal and a far-end reference signal, estimating an echo suppressed signal and an echo signal based on the microphone signal and the far-end reference signal, estimating enhancement filters for the microphone signal based on the echo suppressed signal and the echo signal, generating an enhanced signal based on the enhancement filters, and adjusting the enhanced signal using automatic gain control (AGC) and outputting the adjusted signal.

Abstract: One aspect provides a system and method for provisioning an access point (AP) in a wireless mesh network. During operation, a controller can obtain a set of published global encryption parameters comprising a master public key, apply an identity-based encryption (IBE) scheme to encrypt a configuration message based at least on the master public key, and transmit the encrypted configuration message to a proxy device, which forwards the encrypted configuration message to the AP. The proxy device is coupled to the controller via a previously established secure communication channel and coupled to the AP via an open communication channel. The AP can decrypt the encrypted configuration message using an AP-specific secret key generated based on a unique identifier of the AP and a master private key corresponding to the master public key, thereby facilitating provisioning of the AP based on the configuration message.

Abstract: A curing agent for disposal of municipal solid waste incineration (MSWI) fly ash and a preparation method and use method thereof are provided. In the present disclosure, a loofah nanofiber crystal, a rice husk ash (RHA), sodium hydroxide, and water are adopted as raw materials to prepare the curing agent, and the curing agent can effectively realize the safe disposal and curing of heavy metals in an MSWI fly ash. The highest curing rates of the curing agent for heavy metals Pb2+, Zn2+, Cd2+, Cr3+, and Cu2+ can reach 99.7%, 99.4%, 99.5%, 98.7%, and 99.5%, respectively. The special three-dimensional (3D) cross-linked network structure of the loofah nanofiber crystal and the excellent physical and chemical adsorption properties and ion exchange capacity of the RHA are fully used in the curing agent of the present disclosure.