Abstract: Provided are an application acceleration method and an application acceleration device. The application acceleration method includes invoking, by a control center, a process monitoring class to monitor start and end of a process. Process information on a process sent by the process monitoring class is received after the process monitoring class monitors that the process is started and confirms that the process requires to be accelerated. A service class is invoked based on the process information, where the service class monitors multiple states of the process, and executes a task in each of the multiple states of the process until the process is in an end state.

Abstract: An apparatus including a memory operably coupled to a processor. The processor is configured to select an intra smoothing filter for a rectangular prediction unit (PU) based on a lookup table (LUT) used for square PUs, wherein a width of the rectangular PU is different from a height of the rectangular PU.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for performing intra coding predictions. An intra-coding process applied to pixels in a frame of media is determined. The intra-coding process is determined whether to corresponding to at least one of most probable modes. In response to determining the intra-coding process does not correspond to the at least one of the most probable modes, four angular prediction modes are extracted from a list of prediction modes. A set of candidates based on the four angular prediction modes are determined. A pre-defined order of the set of candidates is determined, wherein each candidate mode of the set of candidate modes is included in a ranked order and signaled with a particular fixed length coding, and wherein a length of the particular fixed length coding increases based on the pre-defined order of the set of candidate modes.

Abstract: A zero discharge process for separating sludge and salt from desulfurization wastewater includes a pretreatment process, a membrane treatment process and an evaporative crystallization process; in the pretreatment process, the desulfurization wastewater enters a raw water tank, an aeration fan introduces compressed air into the raw water tank, and the wastewater is lifted to first-stage reaction and clarification by a raw water pump; in the membrane treatment process, the incoming wastewater is first filtered by ultrafiltration, then enters a pH adjustment tank, and is pumped into a nanofiltration membrane separation system and a reverse osmosis membrane separation system; in the evaporative crystallization process, the incoming wastewater is first subjected to two-stage preheating, then enters a degasser, and finally enters an evaporative concentration system and a crystallization system.

Abstract: A system includes a processing device configured to execute instructions including accessing messages sent by a first user and other users. The instructions include identifying a first subset of messages that were sent by the first user and identifying a second subset of messages that are related to a first topic and were sent by the first user. The instructions include determining an authority value based on counts of the first and second subsets. The instructions include identifying a third subset of messages that resulted from the other users forwarding the second subset. The instructions include determining a power value based on a count of users that sent the third subset and computing an impact score for the first user on the first topic based on the authority and power values. The instructions include, based on the impact score, contacting the first user in relation to the first topic.

Abstract: A highly integrated, fully automatic chemiluminescence detection equipment and its operation method are disclosed. The chemiluminescence detection equipment comprises a control module, a first electrical machine, a reagent wheel disc tank, a sampling module, a washing module, a second electrical machine and a detection module. Compared with the traditional large-scale chemiluminescence detection equipment, the chemiluminescence detection equipment of the present invention has the advantage of high integration, and greatly reduces the overall volume and weight of the chemiluminescence detection equipment.

Abstract: A field effect transistor and a manufacturing method thereof are provided. The field effect transistor includes two top gate structures (1031C and 1031D) and two bottom gate structures (1032A and 1032B). The top gate structures (1031C and 1031D) and the bottom gate structures (1032A and 1032B) are opposite to each other in pair. This increases a quantity of control-voltage-induced carriers in the field effect transistor, and therefore increases an output current of the field effect transistor, improves a power gain limit frequency in high-frequency use, and makes an electric field between the top gate structures (1031C and 1031D) and the bottom gate structures (1032A and 1032B) more adequately cover a channel layer (106) between source structures (1041 and 1042) and a drain (105), thereby reducing a parasitic effect in a high frequency, and further improving a frequency characteristic of the field effect transistor.

Abstract: The present disclosure relates to a tunneling field-effect transistor and a fabrication method. One example transistor includes a semiconductor substrate, a semiconductor nanosheet, a source region and a drain region, a dielectric layer, and a gate metal layer. The semiconductor nanosheet is vertically disposed on the semiconductor substrate. The source region and the drain region are connected using a channel. The drain region, the channel, and the source region are disposed on the semiconductor nanosheet in turn. The drain region is in contact with the semiconductor substrate. The source region is located at an end, of the semiconductor nanosheet, far away from the semiconductor substrate. The dielectric layer comprises at least a gate dielectric layer, is disposed on a surface of the semiconductor nanosheet, and surrounds the channel. The gate metal layer is disposed on a surface of the gate dielectric layer and surrounds the gate dielectric layer.

Abstract: System and method embodiments for image coding are disclosed. In an embodiment, a method in a data processing system for image encoding includes determining a sparsity constraint according to a dimension of an input image signal. The method also includes iteratively determining a plurality of approximations to the input image signal. Each iteration provides an approximation of the input image signal. Each approximation includes a set of dictionary element indices and coefficients. The dictionary is an over-complete dictionary. Iterations of the determining step are terminated when a number of iterations is equal to the sparsity constraint. The method also includes selecting one of the plurality of approximations according to a minimum rate-distortion cost. The method also includes determining an encoded image signal according to non-zero coefficients and corresponding indices for each non-zero coefficient in the selected approximation.

Abstract: A wireless communications method, apparatus, and system including a terminal is provided. The terminal sets up a connection to a first base station, and stays in always connected mode. When the terminal moves in a dense network, handovers of the first base station can be reduced. Further, when the terminal moves in the dense network, frequent signaling interaction is reduced, paging load in the entire network is reduced, and an end-to-end delay in service setup and transmission is reduced.

Abstract: An apparatus comprises a receiver configured to receive video views comprising a reference view and a current view, wherein the reference view comprises a reference block and the current view comprises a current block, and a processor coupled to the receiver and configured to determine neighboring reference pixels associated with the reference block, determine neighboring current pixels associated with the current block, determine a first positional pairing between the neighboring reference pixels and the neighboring current pixels, determine a second positional pairing between the neighboring reference pixels and the neighboring current pixels, and determine an optimal pairing from between the first positional pairing and the second positional pairing.

Abstract: An information processing method, includes calculating, using a first station, an estimated ratio of a quantity of pulses affected by a photon-number splitting (PNS) attack including a multi-photon in the pulses to a total quantity of the pulses, performing, using the first station, error correction processing on key information based on the estimated ratio to obtain a shared key of the first station and a second station when the estimated ratio is less than a preset threshold. Hence, a degree to which the photon is affected by the PNS attack can be estimated in order to perform error correction on the key information, thereby improving security of a key distribution.

Abstract: A voltage regulation circuit includes a first comparison and control unit and a second comparison and control unit. The first comparison and control unit is connected to a first switch unit, determine a first bias voltage based on a first output voltage, a first reference voltage, and a second reference voltage, and control a value of an equivalent resistance of the first switch unit using the first bias voltage. The second comparison and control unit is connected to a third switch unit and the second switch unit, determine a second bias voltage based on the first output voltage, a second output voltage, and a third reference voltage, and control values of equivalent resistances of the third switch unit and the second switch unit using the second bias voltage.

Abstract: The present application disclosed a conducting layer-dielectric layer-conducting layer (CDC) laminate structure and test method for detecting defects of an inter-metal dielectric layer. The laminate structure comprises: a dielectric layer formed on a substrate; a first conducting layer formed at a first side of the dielectric layer, wherein the first conducting layer includes a first metal region and at least one first opening in the first metal region; and a second conducting layer formed at a second side of the dielectric layer opposite to the first conducting layer such that the second conducting layer is separated from the first conducting layer by the dielectric layer, wherein the second conducting layer includes a second metal region and a plurality of second openings in the second metal region.

Abstract: A semiconductor device and a method for fabricating a semiconductor device are disclosed. The semiconductor device includes a tunnel field-effect transistor and a planar device. The tunnel field-effect transistor includes a first substrate and a first electrical element, and the first electrical element is formed on one side of the first substrate; the planar device includes a second substrate and a second electrical element, the second substrate and the first substrate are an integrated structure and form a main substrate, the second electrical element is formed on one side of the second substrate, and the second electrical element and the first electrical element are disposed on a same side of the main substrate; and the planar device includes any one of a metal oxide semiconductor transistor, a capacitor, and a resistor.

Abstract: Embodiments of the present invention provide a wireless communications method, apparatus, and system. A terminal is provided. The terminal sets up a connection to a first base station, and stays in always connected mode. Therefore, when the terminal moves in a dense network, handovers of the first base station can be reduced. Further, when the terminal moves in the dense network, frequent signaling interaction is reduced, paging load in the entire network is reduced, and an end-to-end delay in service setup and transmission is reduced.

Abstract: A tunnel field-effect transistor (TFET) is provided. In the TFET, a channel region (202) connects a source region (201) and a drain region (203); a pocket layer (204) and a gate oxide layer (205) are successively produced between the source region and a gate region (206); a metal layer (208) is produced in a first area in the source region, the first area is located on a side on which the source region is in contact with the pocket layer, and the pocket layer covers at least a part of the metal layer; and the pocket layer and a second area in the source region form a first tunnel junction of the TFET, and the pocket layer and the metal layer form a second tunnel junction of the TFET.

Abstract: A voltage regulation circuit includes an obtainer that is configured to obtain load information of a corresponding load and output the load information to a corresponding controller. The corresponding controller generates a switch control signal based on the load information and outputs the switch controller to at least one switch. The at least one switch regulates, based on the accurate switch control signal, a voltage input to the corresponding load.

Abstract: Metalized plastic substrates, and methods thereof are provided herein. The method includes providing a plastic having a plurality of accelerators dispersed in the plastic. The accelerators have a formula ABO3, wherein A is one or more elements selected from Groups 9, 10, and 11 of the Periodic Table of Elements, B is one or more elements selected from Groups 4B and 5B of the Periodic Table of Elements, and O is oxygen. The method includes the step of irradiating a surface of plastic substrate to expose at least a first accelerator. The method further includes plating the irradiated surface of the plastic substrate to form at least a first metal layer on the at least first accelerator, and then plating the first metal layer to form at least a second metal layer.

Abstract: An information processing method, includes calculating, using a first station, an estimated ratio of a quantity of pulses affected by a photon-number splitting (PNS) attack including a multi-photon in the pulses to a total quantity of the pulses, performing, using the first station, error correction processing on key information based on the estimated ratio to obtain a shared key of the first station and a second station when the estimated ratio is less than a preset threshold. Hence, a degree to which the photon is affected by the PNS attack can be estimated in order to perform error correction on the key information, thereby improving security of a key distribution.