Abstract: A rolled-up electromagnetic component for on-chip applications comprises: a multilayer sheet in a rolled configuration comprising at least one turn about a longitudinal axis; a core defined by a first turn of the rolled configuration; and a soft magnetic material disposed within the core, where the multilayer sheet comprises a conductive pattern layer on a strain-relieved layer. A method of making a rolled-up electromagnetic component for on-chip applications includes forming a rolled-up device comprising: a multilayer sheet in a rolled configuration having at least one turn about a longitudinal axis, where the multilayer sheet comprises a conductive pattern layer on a strain-relieved layer; and a core defined by a first turn of the rolled configuration. The method further includes introducing a soft magnetic material into the core.

Abstract: An array of rolled-up power inductors for on-chip applications comprises at least two rolled-up power inductors connected in series and formed from a stack of multilayer sheets. The array includes a first rolled-up power inductor comprising a first multilayer sheet in a rolled configuration about a first longitudinal axis and second rolled-up power inductor comprising a second multilayer sheet in a rolled configuration about a second longitudinal axis. The first and second rolled-up power inductors are laterally spaced apart. The first multilayer sheet comprises a first patterned conductive layer on a first strain-relieved layer, and the second multilayer sheet comprises a second patterned conductive layer on a second strain-relieved layer. Prior to roll-up of the second and first multilayer sheets, the second multilayer sheet is disposed on the first multilayer sheet, and a through-thickness first via connects the second patterned conductive layer with the first patterned conductive layer.

Abstract: An optoelectronic device includes an etched body comprising a buried metal contact layer on a top surface of a semiconductor structure, which comprises one or more semiconductor layers. The buried metal contact layer includes an arrangement of holes therein. A plurality of nanopillar structures protrude from the top surface of the semiconductor structure and pass through the arrangement of holes. Each nanopillar structure is surrounded at a base thereof by a portion of the buried metal contact layer. When the etched body is exposed to incident radiation having a wavelength in the range from about 300 nm to about 10 microns, at least about 50% of the incident radiation is transmitted through the etched body at a peak transmission wavelength ?max.

Abstract: A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.

Abstract: A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.

Abstract: A wireless communication device includes an array of helical antennas on a substrate. Each helical antenna comprises a strain-relieved sheet with a conductive strip thereon, where the strain-relieved sheet and the conductive strip are in a rolled configuration about a longitudinal axis. The conductive strip is oriented at an angle ? with respect to a rolling direction so as to comprise a helical configuration about the longitudinal axis with a non-zero helix angle ?. The array exhibits a maximum gain of at least about 10 dB at a working frequency of at least about 0.1 THz.

Abstract: The present invention concerns cyclic compounds, compositions comprising the cyclic compounds, linkers, a method of preparing a carrying agent:cyclic compound adduct, a method for treating disorders such as proliferation disorders (e.g., malignancies), bone deficiency diseases, and autoimmune diseases, and a method for suppressing the growth of, or inducing apoptosis in, cells (e.g., malignant cells).

Abstract: The disclosure provides antibodies, antibody fragments or antigen-binding fragments, as well as related antibody drug conjugates (ADCs) and chimeric antigen receptors (CARs), that specifically recognize human ROR2, Also provided in the disclosure are methods of using such antibodies in various diagnostic and therapeutic applications,

Abstract: An optoelectronic device with an antireflective surface comprises a semiconductor substrate having a textured surface including a plurality of surface protrusions and/or indentations. A first electrode is in contact with the semiconductor substrate and spaced apart from a second electrode that is also in contact with the semiconductor substrate. The textured surface is fabricated by inverse metal-assisted chemical etching, and thus the semiconductor substrate is substantially devoid of ion-induced defects.

Abstract: A method of metal-assisted chemical etching comprises forming an array of discrete metal features on a surface of a semiconductor structure, where each discrete metal feature comprises a porous metal body with a plurality of pores extending therethrough and terminating at the surface of the semiconductor structure. The semiconductor structure is exposed to an etchant, and the discrete metal features sink into the semiconductor structure as metal-covered surface regions are etched. Simultaneously, uncovered surface regions are extruded through the pores to form anchoring structures for the discrete metal features. The anchoring structures inhibit detouring or delamination of the discrete metal features during etching. During continued exposure to the etchant, the anchoring structures are gradually removed, leaving an array of holes in the semiconductor structure.

Abstract: The present invention concerns cyclic compounds, compositions comprising the cyclic compounds, linkers, a method of preparing a carrying agent:cyclic compound adduct, a method for treating disorders such as proliferation disorders (e.g., malignancies), bone deficiency diseases, and autoimmune diseases, and a method for suppressing the growth of, or inducing apoptosis in, cells (e.g., malignant cells).

Abstract: A tubular resonant filter comprises a multilayer sheet in a rolled configuration comprising multiple turns about a longitudinal axis, where the multilayer sheet includes a strain-relieved layer, a patterned first conductive layer on the strain-relieved layer, an insulating layer on the patterned first conductive layer, and a patterned second conductive layer on the insulating layer and the patterned first conductive layer. The patterned first and second conductive layers and the insulating layer are interrelated to form a rolled-up inductor connected to a rolled-up capacitor on the strain-relieved layer.

Abstract: A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.

Abstract: An array of rolled-up power inductors for on-chip applications comprises at least two rolled-up power inductors connected in series and formed from a stack of multilayer sheets. The array includes a first rolled-up power inductor comprising a first multilayer sheet in a rolled configuration about a first longitudinal axis and second rolled-up power inductor comprising a second multilayer sheet in a rolled configuration about a second longitudinal axis. The first and second rolled-up power inductors are laterally spaced apart. The first multilayer sheet comprises a first patterned conductive layer on a first strain-relieved layer, and the second multilayer sheet comprises a second patterned conductive layer on a second strain-relieved layer. Prior to roll-up of the second and first multilayer sheets, the second multilayer sheet is disposed on the first multilayer sheet, and a through-thickness first via connects the second patterned conductive layer with the first patterned conductive layer.

Abstract: A method of metal-assisted chemical etching comprises forming an array of discrete metal features on a surface of a semiconductor structure, where each discrete metal feature comprises a porous metal body with a plurality of pores extending therethrough and terminating at the surface of the semiconductor structure. The semiconductor structure is exposed to an etchant, and the discrete metal features sink into the semiconductor structure as metal-covered surface regions are etched. Simultaneously, uncovered surface regions are extruded through the pores to form anchoring structures for the discrete metal features. The anchoring structures inhibit detouring or delamination of the discrete metal features during etching. During continued exposure to the etchant, the anchoring structures are gradually removed, leaving an array of holes in the semiconductor structure.

Abstract: A wireless communication device includes an array of helical antennas on a substrate. Each helical antenna comprises a strain-relieved sheet with a conductive strip thereon, where the strain-relieved sheet and the conductive strip are in a rolled configuration about a longitudinal axis. The conductive strip is oriented at an angle ? with respect to a rolling direction so as to comprise a helical configuration about the longitudinal axis with a non-zero helix angle ?. The array exhibits a maximum gain of at least about 10 dB at a working frequency of at least about 0.1 THz.

Abstract: A magnetic field-guided method of metal-assisted chemical etching comprises immersing a structure that comprises a two-dimensional magnetic pattern layer on a surface thereof in an etchant solution. The magnetic pattern layer sinks into the structure as portions of the structure directly under the magnetic pattern layer are etched. A programmable magnetic field H(t) is applied to the structure during etching to guide the sinking of the magnetic pattern layer, thereby controlling the etching of the structure in three dimensions.

Abstract: An optoelectronic device includes an etched body comprising a buried metal contact layer on a top surface of a semiconductor structure, which comprises one or more semiconductor layers. The buried metal contact layer includes an arrangement of holes therein. A plurality of nanopillar structures protrude from the top surface of the semiconductor structure and pass through the arrangement of holes. Each nanopillar structure is surrounded at a base thereof by a portion of the buried metal contact layer. When the etched body is exposed to incident radiation having a wavelength in the range from about 300 nm to about 10 microns, at least about 50% of the incident radiation is transmitted through the etched body at a peak transmission wavelength ?max.

Abstract: A tubular resonant filter comprises a multilayer sheet in a rolled configuration comprising multiple turns about a longitudinal axis, where the multilayer sheet includes a strain-relieved layer, a patterned first conductive layer on the strain-relieved layer, an insulating layer on the patterned first conductive layer, and a patterned second conductive layer on the insulating layer and the patterned first conductive layer. The patterned first and second conductive layers and the insulating layer are interrelated to form a rolled-up inductor connected to a rolled-up capacitor on the strain-relieved layer.

Abstract: The present invention concerns cyclic compounds, compositions comprising the cyclic compounds, linkers, a method of preparing a carrying agent:cyclic compound adduct, a method for treating disorders such as proliferation disorders (e.g., malignancies), bone deficiency diseases, and autoimmune diseases, and a method for suppressing the growth of, or inducing apoptosis in, cells (e.g., malignant cells).