Abstract: Disclosed is a display device, a manufacturing method thereof and a display apparatus. The display device includes a carrier having a first surface and a second surface opposite to each other, and at least one nanotube in the carrier. Each nanotube includes a tube wall and a receiving cavity surrounded by the tube wall. The receiving cavity includes a first open end at the first surface and a second open end at the second surface. The display device further includes a first electrode at the first open end, a second electrode at the second open end and a light-emitting layer between the first electrode and the second electrode.

Abstract: The invention discloses an anti-fouling polyurethane thin film with high elasticity and high transparency, a preparation method and use thereof. The raw materials of the polyurethane thin film include the following active ingredients by mass fractions: 30% to 40% of a hard segment monomer, 40% to 50% of a soft segment monomer, 3% to 6% of a hydrophilic monomer, 0% to 3% of a crosslinking monomer, 0% to 5% of a small molecular chain extender, and 10% to 15% of a compound with low surface energy. A chemically and physically double-crosslinked anti-fouling polyurethane is synthesized through a polycondensation reaction. This thin film exhibits superior low adhesion and anti-fouling properties, and can achieve the coexistence of both low adhesion and stretchability at the same time.

Abstract: A lighting apparatus includes a light body, a driver circuit and a driver box. The light body includes a light source and a light housing. The driver circuit is used for converting an external power to a driving current.a driver box. The driver box has an external housing and a driver container. The driver circuit is placed in the driver container. The driver container has a side chamber for selectively installing a manual switch coupled to the driver circuit to change a setting of the driver circuit. The driver container is placed inside the external housing and there is a glue room outside the driver container and inside the external housing. The glue room is selectively added with heat dissipation glue for heat dissipation.

Abstract: An array substrate includes a base substrate, a light-shielding pattern, a buffer pattern, an active layer, a gate insulating layer and a first passivation layer provided with a first via, a second via and a third via, and a source and a drain. An entire orthographic projection of the active layer on the base substrate coincides with an orthographic projection of at least part of the buffer pattern on the base substrate. The orthographic projection of the buffer pattern on the base substrate is within a border of an orthographic projection of the light-shielding pattern on the base substrate, and its area is less than an area of the orthographic projection of the light-shielding pattern on the base substrate. One of the source and the drain is coupled to the active layer through the first via, and another one is coupled to the active layer through the second via and the light-shielding pattern through the third via.

Abstract: The present application discloses a thin film transistor. The thin film transistor includes a base substrate; an active layer; an etch stop layer on a side of the active layer distal to the base substrate; and a source electrode and a drain electrode on a side of the etch stop layer distal to the active layer. The active layer includes a channel region, a source electrode contact region, and a drain electrode contact region. An orthographic projection of the etch stop layer on the base substrate surrounds an orthographic projection of the drain electrode contact region on the base substrate. An orthographic projection of the source electrode contact region on the base substrate at least partially peripherally surrounding the orthographic projection of the etch stop layer on the base substrate.

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The thin film transistor is provided on a base substrate and includes: an active layer including a first surface and a second surface which are opposite to each other, in which the second surface is closer to the base substrate than the first surface; and a source-drain electrode layer including a source electrode and a drain electrode which are separated from each other and are respectively connected with the active layer; each of the first surface and the second surface is a non-flat surface, and the non-flat surface includes a plurality of depressions and a plurality of protrusions which are alternately arranged.

Abstract: A method for qualitative identification and quantitative determination of caffeine in a drug. In the method, terahertz absorption coefficient spectra of drugs with different concentrations of caffeine are measured, from which the frequency points, amplitudes and peak areas of characteristic peaks of the drugs with different concentrations of caffeine are obtained as characteristic quantities. Concentration gradients are established between the concentrations and the characteristic quantities, respectively. The characteristic quantities are imported to the SVR model to establish a training set and a test set. Finally, the qualitative identification and quantitative analysis of caffeine in unknown drugs are achieved.

Abstract: The disclosure relates to an array substrate. The array substrate may include a base substrate, an auxiliary electrode, a thin film transistor, a first insulating layer, a first electrode, a second insulating layer, and a second electrode sequentially arranged in a direction away from the base substrate. The auxiliary electrode is between the first insulating layer and the second insulating layer and insulated from the first electrode, the auxiliary electrode is coupled to a drain of the thin film transistor through a first via hole in the first insulating layer, and the second electrode is coupled to the auxiliary electrode through a second via hole in the second insulating layer.

Abstract: A compound for use in oil recovery includes a quantum dot and a zwitterionic surfactant. The quantum dot has a diameter no greater than 25 nm and the quantum dot is bonded to the zwitterionic surfactant. A nanofluid for use in oil recovery includes the compound described above and a fluid carrier. A method for recovering oil from a formation includes flooding the formation with a nanofluid. The nanofluid has a quantum dot diameter no greater than 25 nm bonded to a zwitterionic surfactant and a fluid carrier.

Abstract: Provided is a method for identifying authenticity and origin of Panax quinquefolius based on terahertz spectroscopy. The time domain spectral information of the Panax quinquefolius sample is obtained, and converted into the frequency domain spectral information by Fourier transform to calculate a terahertz absorption spectrum. The identification is performed by observing whether there are characteristic absorption peaks of pseudoginsenoside F11 in the terahertz absorption spectrum.

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The thin film transistor is provided on a base substrate and includes: an active layer including a first surface and a second surface which are opposite to each other, in which the second surface is closer to the base substrate than the first surface; and a source-drain electrode layer including a source electrode and a drain electrode which are separated from each other and are respectively connected with the active layer; each of the first surface and the second surface is a non-flat surface, and the non-flat surface includes a plurality of depressions and a plurality of protrusions which are alternately arranged.

Abstract: The filament bulb includes a bulb head, a bulb and multiple light source components. The bulb is disposed on the bulb head. The light source components are used for luminescence. The light source components are connected to the bulb head. The light source components are extended the bulb. The light source components include a central column, a bracket, and multiple LED light filaments. The central column is disposed on the bulb head. The bracket is disposed on the central column. The supporting wire is fixed on the central column. A circumferential direction of the central column is surrounded by multiple LED light filaments.

Abstract: Disclosed is a display device, a manufacturing method thereof and a display apparatus. The display device includes a carrier having a first surface and a second surface opposite to each other, and at least one nanotube in the carrier. Each nanotube includes a tube wall and a receiving cavity surrounded by the tube wall. The receiving cavity includes a first open end at the first surface and a second open end at the second surface. The display device further includes a first electrode at the first open end, a second electrode at the second open end and a light-emitting layer between the first electrode and the second electrode.

Abstract: The present application discloses a thin film transistor. The thin film transistor includes a base substrate; an active layer; an etch stop layer on a side of the active layer distal to the base substrate; and a source electrode and a drain electrode on a side of the etch stop layer distal to the active layer. The active layer includes a channel region, a source electrode contact region, and a drain electrode contact region. An orthographic projection of the etch stop layer on the base substrate surrounds an orthographic projection of the drain electrode contact region on the base substrate. An orthographic projection of the source electrode contact region on the base substrate at least partially peripherally surrounding the orthographic projection of the etch stop layer on the base substrate.

Abstract: The present disclosure compounds, as well as their compositions and methods of use. The compounds inhibit the activity of the TEAD transcription factor, and are useful in the treatment of diseases related to the activity of TEAD transcription factor including, e.g., cancer and other diseases.

Abstract: The present disclosure provides an array substrate, a method for manufacturing the same, and a display device, which belongs to the field of display technology. The array substrate includes a metal electrode layer, a pad layer, a first insulating layer and a first transparent conductive layer, wherein: the pad layer includes a transparent conductive material, the metal electrode layer includes a conductive layer and protection layers formed on both surfaces of the conductive layer, and the pad layer is connected to the metal electrode layer; the first insulating layer is covered on the metal electrode layer and the pad layer, and the first transparent conductive layer is disposed on the first insulating layer; and a via hole is provided in the first insulating layer, and the first transparent conductive layer is connected to the pad layer through the via hole.

Abstract: A method for manufacturing an array substrate includes: forming a metal-oxide semiconductor layer, a first conductive layer and a second conductive layer sequentially on a substrate; and treating the metal-oxide semiconductor layer, the first conductive layer and the second conductive layer in a single patterning process using a mask, to form an active layer, pixel electrodes, a source drain pattern layer which includes source electrodes, drain electrodes and data lines, and a reserved pattern of the first conductive layer which is provided in a same layer as the pixel electrodes and formed on sides of the source electrodes and the data lines close to the active layer. The drain electrode is in direct contact with the pixel electrode, and a partial region of the pixel electrode is unobstructed from the drain electrode.

Abstract: A thin film transistor, a controlling method thereof, an array substrate and a display device. The thin film transistor includes: a substrate; and a gate electrode, an active layer, a source and a drain on the substrate. The source comprises two source electrodes electrically connected with each other; the drain comprises two drain electrodes electrically connected with each other, and the two drain electrodes are between the two source electrodes; and the active layer comprises primary channels between adjacent source electrodes and drain electrodes and a secondary channel between the two drain electrodes.

Abstract: A method for manufacturing an array substrate includes: forming a metal-oxide semiconductor layer, a first conductive layer and a second conductive layer sequentially on a substrate; and treating the metal-oxide semiconductor layer, the first conductive layer and the second conductive layer in a single patterning process using a mask, to form an active layer, pixel electrodes, a source drain pattern layer which includes source electrodes, drain electrodes and data lines, and a reserved pattern of the first conductive layer which is provided in a same layer as the pixel electrodes and formed on sides of the source electrodes and the data lines close to the active layer. The drain electrode is in direct contact with the pixel electrode, and a partial region of the pixel electrode is unobstructed from the drain electrode.

Abstract: The present disclosure provides an array substrate, a method for manufacturing the same, and a display device, which belongs to the field of display technology. The array substrate includes a metal electrode layer, a pad layer, a first insulating layer and a first transparent conductive layer, wherein: the pad layer includes a transparent conductive material, the metal electrode layer includes a conductive layer and protection layers formed on both surfaces of the conductive layer, and the pad layer is connected to the metal electrode layer; the first insulating layer is covered on the metal electrode layer and the pad layer, and the first transparent conductive layer is disposed on the first insulating layer; and a via hole is provided in the first insulating layer, and the first transparent conductive layer is connected to the pad layer through the via hole.