Abstract: An axial flow fan comprising a printed circuit board which mounts the circuitry for operating the motor which is a bipolar winding motor. A voltage regulator IC and a driving IC for a bipolar winding motor are mounted on the printed circuit board. The fan housing is employed as a heat sink for the voltage regulator. Large circuit elements are eliminated. The axial flow fan further comprises a plurality of blades for cooling electronic components wherein the blades comprise of a plurality of specially designed airfoil sections, each section having along substantially the entire length thereof, a cross-sectional shape characterized by a maximum thickness located substantially constantly between about 19% chord to about 20% chord and a maximum camber located substantially constantly between about 45% chord to about 46% chord. The circuitry, housing, and blades are designed so that the axial width of the axial fan is decreased while maintaining performance parameters and design constraints.

Abstract: A method for improving the fault coverage of functional tests for integrated circuits by establishing a design-specific low voltage functional screening procedure. In the disclosed embodiment of the invention, a reduced voltage test threshold is established by comparing the results of an iterative test procedure executed on a set of known good integrated circuits and integrated circuits which have passed traditional functional test programs but manifested problems in the field. For a given device under test, the iterative procedure commences by applying a system clock and nominal power supply voltage. A set of functional test vectors is then executed on the device using automated test equipment (ATE). The results are compared with expected test results to determine if the device is a passing device under the initial test conditions. If so, the power supply voltage is decremented by a predetermined value and the test process is repeated.

Abstract: There is an adjustable splint for fractures or other injuries of the figure or toe. The splint comprises an anchor plate adapted to be secured against the wearer's palm or sole by a velcro strap or the like, and a channel member which is engagable with apertures in the anchor plate at any one of a range of positions to align with the finger or toe fracture to be set. The channel portion is shaped to cradle and immobilize the finger or toe fracture and is pivotal relative to the anchor plate by a hinge. There are also apertures in the channel member for ventilation and to enable the fitting of a rest member to impose a degree of flexion onto the fracture during healing. There are hinge lines and breaking lines on the channel member to facilitate fitting to the finger or toe fracture.

Abstract: A process is provided for fabricating MODFET's in group III nitride compound semiconductors. The process precedes isolation of the MODFET structure with the use of e-beam lithography to define very narrow (e.g., .about.0.25 micrometer) gates which enhance transistor microwave cut-off frequency. Because these compound semiconductors resist chemical etchants, isolation is accomplished by etching with reactive ions to form an isolation mesa having a vertical mesa sidewall. To improve breakdown, the mesa sidewall is covered with a passivation layer prior to deposition of a gate feed that contacts the gate. To reduce parasitic gate capacitance, the gate feed is spaced from a narrow edge of the transistor's two-dimensional electron gas.

Abstract: An improved method for forming a T-gate structure in a MESFET includes dielectric lift-off steps.

Abstract: A single level gate NVM device (20) includes a floating gate FET (11) and a capacitor (12) fabricated in two P-wells (27, 28) formed in an N-epitaxial layer (22) on a P-substrate (21). P+ sinkers (29, 31) and N-type buried layers (25, 26) provide isolation between the two P-wells (27, 28). The NVM device (20) is programmed or erased by biasing the FET (11) and the capacitor (12) to move charge carriers onto or away from a conductive layer (36) which serves as a floating gate (14) of the FET (11). Data is read from the NVM device (20) by sensing a current flowing in the FET (11) while applying a reading voltage to the capacitor (12).

Abstract: This invention is a Titanium Aluminum alloy consisting essentially of the formula in atomic percent; Ti.sub.Bal. Al.sub.45-48 B.sub.0.01-0.75 Cr.sub.0-2 W .sub.0.25-2.25 Si.sub.0.1-0.7. The Boron is present in an atom. % of 0.01-0.75. The desired range is 0.1-0.5. The preferred range is 0.25+/-0.05. The optimum range is 0.25. The Chromium is present in an atom. % of 0-2. The desired range is 1.3-1.6. The preferred range is 1.5+/-0.1. The optimum range is 1.5. The Tungsten is present in an atom. % of 0.25-2.25. The desired range is 0.3-2.11. The preferred range is 0.75+/-0.05. The optimum range is 0.75. The Silicon is present in an atom. % of 0.1-0.7. The desired range is 0.4-0.6. The preferred range is 0.5+/-0.05. The optimum range is 0.5. The atom. % ratio of Cr/W is 0-5. The desired range is 1.33-2.69. The preferred range is 1.8-2.6. The optimum range is 1.85-2.5. The preferred alloy is a Titanium Aluminum alloy consisting essentially of the formula in atomic percent; Ti.sub.Bal. Al.sub.45.82 B.sub.0.25 Cr.

Abstract: A process is provided for fabricating MODFET's in group III nitride compound semiconductors. The process precedes isolation of the MODFET structure with the use of e-beam lithography to define very narrow (e.g., .about.0.25 micrometer) gates which enhance transistor microwave cut-off frequency. Because these compound semiconductors resist chemical etchants, isolation is accomplished by etching with reactive ions to form an isolation mesa having a vertical mesa sidewall. To improve breakdown, the mesa sidewall is covered with a passivation layer prior to deposition of a gate feed that contacts the gate. To reduce parasitic gate capacitance, the gate feed is spaced from a narrow edge of the transistor's two-dimensional electron gas.

Abstract: A circuit board material is disclosed which includes a support layer, at least one electrical resistance layer having a preselected resistivity adhered to the support layer, a barrier layer adhered to the electrical resistance layer, and a conductive layer adhered to the barrier layer. The barrier layer is capable of protecting the resistance layer from attack by alkaline ammoniacal copper etchants. A method of producing the circuit board material is also disclosed.

Abstract: A single crystal nickel-base superalloy is disclosed having an improved incipient melting temperature and oxidation resistance. The single crystal nickel-base alloy of this invention is characterized by specific addition of chromium, tungsten, aluminum and tantalum to produce an alloy having moderate high temperature strength and improved oxidation resistance and incipient melting temperature. The nominal composition of our new single crystal alloy (in weight percent) is 10-15% Cr, 0-4% Co, 6-8.5% W, 6-7% Al, 0-1% Ti, 2-6% Ta, and the balance nickel.

Abstract: Nickel base superalloy single crystal articles, preferably aircraft gas turbine blades and vanes, and a process for preparation thereof, wherein phase stability after extended elevated temperature exposure is enhanced by controlling the content of heavy refractory elements and gamma prime phase forming elements. The nominal alloy composition range in weight percent is 4-6 percent chromium, 8-12 percent cobalt, 1-2.5 percent molybdenum, 3-6 percent tungsten, 1.8-3.2 percent rhenium, 0-2.5 percent ruthenium, 5-6 percent aluminum, 0.5-1.5 percent titanium, 7-10 percent tantalum, 0.08-0.12 percent hafnium, balance nickel. The sum of the heavy refractory elements molybdenum plus tungsten plus rhenium is 8.4-10.4 percent, and the sum of the gamma prime forming elements aluminum plus titanium plus tantalum is 13.8-15.7 percent.

Abstract: Nickel base superalloys intended for use at low to moderate temperatures are provided with improved corrosion resistance by the addition of from 0.2 to 0.6% manganese. The manganese addition also improves the creep properties of the alloys. The manganese modified alloys are suited for use as elements in gas turbine engines for marine environments.

Abstract: Monocarbide reinforced nickel-base eutectic superalloys which are substantially phase stable and have improved high temperature stress-rupture strength with improved resistance to the formation of surface nucleated carbides are provided. These superalloys are especially suited for making unidirectionally solidified anisotropic metallic bodies in the form of vanes and rotating blades for aircraft gas turbine engines.

Abstract: The microstructural stability of nickel base alloys at high temperatures is nhanced by the addition of cobalt within the range of 10.0 to 14.9 weight percent for reducing the precipitation of the sigma phase in alloys with more than 12 weight percent chromium. The nickel-base alloys having cobalt addition in the range as set forth are characterized by an electron vacancy number within the range of 2.4 to 2.7 inclusive.

Abstract: A specific composition range and process sequence are described for the production of single crystal superalloy articles which have an exceptional combination of high temperature mechanical properties and resistance to oxidation and hot corrosion. The nominal composition in weight percent is 7.5% Cr, 5.0% Al, 1.0% Ti, 2.0% Mo, 4.0% W, 12.0% Ta, 5% Co, balance nickel. Material of this composition is cast and solidified in single crystal form and heat treated to produce an optimum microstructure.