Patents by Inventor Xue-Hung TSAI
Xue-Hung TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11810526Abstract: An e-paper display apparatus including an e-paper display panel is provided. The e-paper display panel includes multiple pixel circuits arranged in an array. Each of the pixel circuits includes a transistor device. The transistor device is an oxide thin-film transistor. A set of signal waveforms for driving the pixel circuits to display image pages includes multiple frames. In a low panel frequency mode, the number of the frames is less than ten.Type: GrantFiled: September 20, 2022Date of Patent: November 7, 2023Assignee: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Xue-Hung Tsai
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Patent number: 11721263Abstract: An e-paper display apparatus including an e-paper display panel is provided. The e-paper display panel includes a plurality of pixel circuits arranged in an array. Each of the pixel circuits includes a transistor device, a storage capacitor and a pixel capacitor. A data voltage is configured to drive the storage capacitor and the pixel capacitor, so as to drive the e-paper display panel to display image. The transistor device is an oxide thin-film transistor. An absolute value of the data voltage is greater than or equal to 20 voltages.Type: GrantFiled: September 27, 2022Date of Patent: August 8, 2023Assignee: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Xue-Hung Tsai
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Publication number: 20230206802Abstract: An e-paper display apparatus including an e-paper display panel is provided. The e-paper display panel includes a plurality of pixel circuits arranged in an array. Each of the pixel circuits includes a transistor device, a storage capacitor and a pixel capacitor. A data voltage is configured to drive the storage capacitor and the pixel capacitor, so as to drive the e-paper display panel to display image. The transistor device is an oxide thin-film transistor. An absolute value of the data voltage is greater than or equal to 20 voltages.Type: ApplicationFiled: September 27, 2022Publication date: June 29, 2023Applicant: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Xue-Hung Tsai
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Publication number: 20230178040Abstract: An e-paper display apparatus including an e-paper display panel is provided. The e-paper display panel includes multiple pixel circuits arranged in an array. Each of the pixel circuits includes a transistor device. The transistor device is an oxide thin-film transistor. A set of signal waveforms for driving the pixel circuits to display image pages includes multiple frames. In a low panel frequency mode, the number of the frames is less than ten.Type: ApplicationFiled: September 20, 2022Publication date: June 8, 2023Applicant: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Xue-Hung Tsai
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Patent number: 11244638Abstract: A trace structure of a display panel including a first metal layer and a second metal layer is provided. The first metal layer is configured to transmit a first voltage. The second metal layer is disposed under the first metal layer and configured to transmit a second voltage. The first metal layer and the second metal layer form the trace structure on the display panel, such that the trace structure has a capacitor structure. The trace structure is configured to connect a power input and a panel driver circuit.Type: GrantFiled: March 2, 2021Date of Patent: February 8, 2022Assignee: E Ink Holdings Inc.Inventors: Xue-Hung Tsai, Wei-Tsung Chen, Po-Hsin Lin
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Patent number: 11120761Abstract: A driving substrate includes a substrate, at least one active device, a resistor, a first passivation layer and a second passivation layer. The active device including an oxide semiconductor layer and the resistor coupled to the active device are disposed on the substrate. The first passivation layer covers the active device, wherein a portion of the first passivation layer directly contacts to the oxide semiconductor layer such that the oxide semiconductor layer has a first conductivity. The second passivation layer covers the first passivation layer and the resistor, wherein a portion of the second passivation layer directly contacts to the resistor such that the resistor has a second conductivity. The first conductivity is different from the second conductivity.Type: GrantFiled: October 16, 2018Date of Patent: September 14, 2021Assignee: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Po-Hsin Lin, Xue-Hung Tsai
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Publication number: 20210272527Abstract: A trace structure of a display panel including a first metal layer and a second metal layer is provided. The first metal layer is configured to transmit a first voltage. The second metal layer is disposed under the first metal layer and configured to transmit a second voltage. The first metal layer and the second metal layer form the trace structure on the display panel, such that the trace structure has a capacitor structure. The trace structure is configured to connect a power input and a panel driver circuit.Type: ApplicationFiled: March 2, 2021Publication date: September 2, 2021Applicant: E Ink Holdings Inc.Inventors: Xue-Hung Tsai, Wei-Tsung Chen, Po-Hsin Lin
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Patent number: 10923068Abstract: A display device and a display driving circuit with electromagnetic interference suppression capability are provided. The display device includes a substrate, an active matrix, a display driver and a thin-film transistor (TFT) conditioning circuit. The active matrix disposed on the substrate includes multiple data lines, multiple gate lines and multiple pixels. The data lines intersect with the gate lines. The pixels are coupled to intersections of the data lines and the gate lines. The display driver disposed on the substrate generates signals for driving the data lines and/or the gate lines in response to a conditioned serial data clock. The TFT conditioning circuit disposed on the substrate is coupled to the display driver. The TFT conditioning circuit includes one or more TFTs, and attenuates an amplitude of a serial data clock in response to a predetermined gate bias to provide the conditioned serial data clock to the display driver.Type: GrantFiled: May 22, 2019Date of Patent: February 16, 2021Assignee: E INK HOLDINGS INC.Inventors: Xue-Hung Tsai, Wei-Tsung Chen, Yu-Lin Wang, Po-Hsin Lin
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Patent number: 10672623Abstract: A method of manufacturing a transistor, includes: (i) forming a metal-oxide semiconductor layer over a substrate; (ii) forming a source electrode and a drain electrode on different sides of the metal-oxide semiconductor layer; (iii) forming a dielectric layer over the source electrode, the drain electrode, and the metal-oxide semiconductor layer; (iv) forming a hydrogen-containing insulating layer over the dielectric layer, in which the hydrogen-containing insulating layer has an aperture exposing a surface of the dielectric layer, and the aperture is overlapped with the metal-oxide semiconductor layer when viewed in a direction perpendicular to the surface; (v) increasing a hydrogen concentration of a portion of the metal-oxide semiconductor layer by treating the hydrogen-containing insulating layer so to form a source region and a drain region; and (vi) forming a gate electrode in the aperture.Type: GrantFiled: December 6, 2018Date of Patent: June 2, 2020Assignee: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Po-Hsin Lin, Xue-Hung Tsai
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Publication number: 20190362685Abstract: A display device and a display driving circuit with electromagnetic interference suppression capability are provided. The display device includes a substrate, an active matrix, a display driver and a thin-film transistor (TFT) conditioning circuit. The active matrix disposed on the substrate includes multiple data lines, multiple gate lines and multiple pixels. The data lines intersect with the gate lines. The pixels are coupled to intersections of the data lines and the gate lines. The display driver disposed on the substrate generates signals for driving the data lines and/or the gate lines in response to a conditioned serial data clock. The TFT conditioning circuit disposed on the substrate is coupled to the display driver. The TFT conditioning circuit includes one or more TFTs, and attenuates an amplitude of a serial data clock in response to a predetermined gate bias to provide the conditioned serial data clock to the display driver.Type: ApplicationFiled: May 22, 2019Publication date: November 28, 2019Applicant: E Ink Holdings Inc.Inventors: Xue-Hung TSAI, Wei-Tsung CHEN, Yu-Lin WANG, Po-Hsin LIN
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Publication number: 20190122628Abstract: A driving substrate includes a substrate, at least one active device, a resistor, a first passivation layer and a second passivation layer. The active device including an oxide semiconductor layer and the resistor coupled to the active device are disposed on the substrate. The first passivation layer covers the active device, wherein a portion of the first passivation layer directly contacts to the oxide semiconductor layer such that the oxide semiconductor layer has a first conductivity. The second passivation layer covers the first passivation layer and the resistor, wherein a portion of the second passivation layer directly contacts to the resistor such that the resistor has a second conductivity. The first conductivity is different from the second conductivity.Type: ApplicationFiled: October 16, 2018Publication date: April 25, 2019Applicant: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Po-Hsin Lin, Xue-Hung Tsai
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Publication number: 20190115227Abstract: A method of manufacturing a transistor, includes: (i) forming a metal-oxide semiconductor layer over a substrate; (ii) forming a source electrode and a drain electrode on different sides of the metal-oxide semiconductor layer; (iii) forming a dielectric layer over the source electrode, the drain electrode, and the metal-oxide semiconductor layer; (iv) forming a hydrogen-containing insulating layer over the dielectric layer, in which the hydrogen-containing insulating layer has an aperture exposing a surface of the dielectric layer, and the aperture is overlapped with the metal-oxide semiconductor layer when viewed in a direction perpendicular to the surface; (v) increasing a hydrogen concentration of a portion of the metal-oxide semiconductor layer by treating the hydrogen-containing insulating layer so to form a source region and a drain region; and (vi) forming a gate electrode in the aperture.Type: ApplicationFiled: December 6, 2018Publication date: April 18, 2019Inventors: Wei-Tsung CHEN, Po-Hsin LIN, Xue-Hung TSAI
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Patent number: 10193022Abstract: A pixel structure includes a substrate, a gate electrode disposed on the substrate, a capacitor electrode disposed on the substrate, a first insulation layer, an active layer disposed on the first insulation layer, a drain electrode, a source electrode and an extension electrode. The capacitor electrode is spaced apart from the gate electrode. The first insulation layer covers the gate electrode and the capacitor electrode. The first insulation layer has a recess vertically above the capacitor electrode. The drain and the source electrodes are disposed on the active layer and spaced apart from each other. The extension electrode extends from the drain electrode or the source electrode into the recess.Type: GrantFiled: November 17, 2017Date of Patent: January 29, 2019Assignee: E Ink Holdings Inc.Inventors: Xue-Hung Tsai, Wei-Tsung Chen, Henry Wang, Po-Hsin Lin
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Patent number: 10186430Abstract: A method of manufacturing a transistor, includes: (i) forming a metal-oxide semiconductor layer over a substrate; (ii) forming a source electrode and a drain electrode on different sides of the metal-oxide semiconductor layer; (iii) forming a dielectric layer over the source electrode, the drain electrode, and the metal-oxide semiconductor layer; (iv) forming a hydrogen-containing insulating layer over the dielectric layer, in which the hydrogen-containing insulating layer has an aperture exposing a surface of the dielectric layer, and the aperture is overlapped with the metal-oxide semiconductor layer when viewed in a direction perpendicular to the surface; (v) increasing a hydrogen concentration of a portion of the metal-oxide semiconductor layer by treating the hydrogen-containing insulating layer so to form a source region and a drain region; and (vi) forming a gate electrode in the aperture.Type: GrantFiled: May 12, 2017Date of Patent: January 22, 2019Assignee: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Po-Hsin Lin, Xue-Hung Tsai
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Publication number: 20180323342Abstract: A pixel structure includes a substrate, a gate electrode disposed on the substrate, a capacitor electrode disposed on the substrate, a first insulation layer, an active layer disposed on the first insulation layer, a drain electrode, a source electrode and an extension electrode. The capacitor electrode is spaced apart from the gate electrode. The first insulation layer covers the gate electrode and the capacitor electrode. The first insulation layer has a recess vertically above the capacitor electrode. The drain and the source electrodes are disposed on the active layer and spaced apart from each other. The extension electrode extends from the drain electrode or the source electrode into the recess.Type: ApplicationFiled: November 17, 2017Publication date: November 8, 2018Inventors: Xue-Hung TSAI, Wei-Tsung CHEN, Henry WANG, Po-Hsin LIN
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Patent number: 10054810Abstract: A display apparatus includes at least one pixel structure, which includes an active device, an electric insulation layer and a pixel electrode. The electric insulation layer is disposed on the active device. The electric insulation layer has a trench and a via. The via is located on a bottom surface of the trench. A portion of the electric insulation layer surrounding the trench is monolithically connected to another portion of the electric insulation layer surrounding the via. A pixel electrode has a first electrode portion and a second electrode portion connected to each other. The first electrode portion is located in the trench. A thickness of the first electrode portion is less than a depth of the trench. The second electrode portion is located in the via and is electrically connected to the active device through the via.Type: GrantFiled: July 6, 2017Date of Patent: August 21, 2018Assignee: E Ink Holdings Inc.Inventors: Xue-Hung Tsai, Wei-Tsung Chen, Henry Wang, Po-Hsin Lin
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Publication number: 20180088397Abstract: A display apparatus includes at least one pixel structure, which includes an active device, an electric insulation layer and a pixel electrode. The electric insulation layer is disposed on the active device. The electric insulation layer has a trench and a via. The via is located on a bottom surface of the trench. A portion of the electric insulation layer surrounding the trench is monolithically connected to another portion of the electric insulation layer surrounding the via. A pixel electrode has a first electrode portion and a second electrode portion connected to each other. The first electrode portion is located in the trench. A thickness of the first electrode portion is less than a depth of the trench. The second electrode portion is located in the via and is electrically connected to the active device through the via.Type: ApplicationFiled: July 6, 2017Publication date: March 29, 2018Inventors: Xue-Hung TSAI, Wei-Tsung CHEN, Henry WANG, Po-Hsin LIN
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Publication number: 20180047587Abstract: A method of manufacturing a transistor, includes: (i) forming a metal-oxide semiconductor layer over a substrate; (ii) forming a source electrode and a drain electrode on different sides of the metal-oxide semiconductor layer; (iii) forming a dielectric layer over the source electrode, the drain electrode, and the metal-oxide semiconductor layer; (iv) forming a hydrogen-containing insulating layer over the dielectric layer, in which the hydrogen-containing insulating layer has an aperture exposing a surface of the dielectric layer, and the aperture is overlapped with the metal-oxide semiconductor layer when viewed in a direction perpendicular to the surface; (v) increasing a hydrogen concentration of a portion of the metal-oxide semiconductor layer by treating the hydrogen-containing insulating layer so to form a source region and a drain region; and (vi) forming a gate electrode in the aperture.Type: ApplicationFiled: May 12, 2017Publication date: February 15, 2018Inventors: Wei-Tsung CHEN, Po-Hsin LIN, Xue-Hung TSAI
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Patent number: 9825140Abstract: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.Type: GrantFiled: August 13, 2015Date of Patent: November 21, 2017Assignee: E Ink Holdings Inc.Inventors: Chia-Chun Yeh, Henry Wang, Xue-Hung Tsai, Chih-Hsuan Wang
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Patent number: 9520451Abstract: An organic light-emitting diode display device includes a substrate, a light-absorption layer, an active array structure, and an organic light-emitting diode. The substrate has a first and a second surface opposite to each other. The light-absorption layer is disposed on the first surface, and has at least one opening exposing a portion of the first surface. The active array structure is positioned on the second surface, and includes at least one data line, at least one gate line, and at least one switching device electrically connected to the gate and data lines. The light-absorption layer overlaps at least one of the data line and the gate line when viewed in a direction perpendicular to the substrate. The organic light-emitting diode is electrically connected to the switching device, and the organic light-emitting diode overlaps the opening when viewed in the direction perpendicular to the substrate.Type: GrantFiled: August 20, 2014Date of Patent: December 13, 2016Assignee: E Ink Holdings Inc.Inventors: Wei-Chou Lan, Ted-Hong Shinn, Xue-Hung Tsai, Chi-Liang Wu, Chih-Hsiang Yang