Abstract: A wire order testing method for testing pin connection relationships between a memory device and an electronic device is provided. The method includes the steps of: testing the memory device with at least one test pattern to obtain at least one first data; predicting at least one second data that is to be obtained from the testing of the memory device with the test pattern according to the mapping relationships between the test pattern and the pins of the memory device; determining the pin connection relationships between the memory device and the electronic device according to the first data and second data.

Abstract: A wire order testing method for testing pin connection relationships between a memory device and an electronic device is provided. The method includes the steps of: testing the memory device with at least one test pattern to obtain at least one first data; predicting at least one second data that is to be obtained from the testing of the memory device with the test pattern according to the mapping relationships between the test pattern and the pins of the memory device; determining the pin connection relationships between the memory device and the electronic device according to the first data and second data.

Abstract: The present disclosure provides methods useful for prolonging the survival of an allograft organ in a recipient mammal. The methods include administration of an anti-CD200 antibody or a CD200-binding fragment of the antibody. The disclosure also provides biomarkers, a change in one or more of which indicates that an anti-CD200 antibody has produced a desired immunomodulatory effect in a mammal. Also featured are pharmaceutical compositions, kits, and solutions that contain at least one anti-CD200 antibody and are useful in the methods described herein.

Abstract: Methods of prolonging survival of a transplanted organ, as well as methods of preventing or attenuating rejection of a transplanted organ are provided. These methods involve contacting the organ with an inhibitor of complement activity (e.g., a complement inhibitor that has a maximum molecular weight of 70 kDa and/or a half-life shorter than 10 days, such as a CR2-FH fusion protein or a single chain anti-C5 antibody), prior to transplantation The methods also include administering to the allotransplant recipient an inhibitor of complement activity together with one or more immunosuppressants. A pretreatment with an alternative complement inhibitor was found to be effective in improving graft survival and decreasing ischemia-reperfusion injury in animal.

Abstract: The disclosure generally describes computer-implemented methods, software, and systems for modeling the possible outcomes of a negative event in the market place. A negative event may be any event that has a negative impact on the marketshare value for a product in a territory. The disclosure also describes, presenting marketing investments that will reduce impact on the marketshare based on the occurrence of a negative event, by an analytical infrastructure.

Abstract: The present disclosure provides methods useful for prolonging the survival of an allograft organ in a recipient mammal. The methods include administration of an anti-CD200 antibody or a CD200-binding fragment of the antibody. The disclosure also provides biomarkers, a change in one or more of which indicates that an anti-CD200 antibody has produced a desired immunomodulatory effect in a mammal. Also featured are pharmaceutical compositions, kits, and solutions that contain at least one anti-CD200 antibody and are useful in the methods described herein.

Abstract: A process chamber 35 capable of processing a substrate 30 and monitoring a process conducted on the substrate 30, comprises a support 45, a gas inlet, a gas energizer, an exhaust 85, and a wall 38 having a recess 145 that is sized to reduce the deposition of process residues therein. A process monitoring system 35 may be used to monitoring a process that may be conducted on a substrate 30 in the process chamber 25 through the recess 145 in the wall 38.

Abstract: A process chamber 35 for processing a substrate 30 and monitoring the process conducted on the substrate 30, comprises a support 45, a gas distributor, and an exhaust 85. The process chamber 35 has a wall which may comprise a window or radiation transmitting portion 130 that allows light to be transmitted therethrough. Residue deposits onto the window 130 during processing of the substrate 30 may be reduced. In one version, the window 130 comprises a transparent plate 135 covered by an overlying mask 140 that has at least one aperture 145 extending through the mask 140 so that light can be transmitted through the aperture 145 and the transparent plate 135.

Abstract: A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

Abstract: The invention is embodied in an antenna for radiating RF power supplied by an RF source into a vacuum chamber, the antenna including plural concentrically spiral conductors, each having a first end located in a first common region and a second end located in a second common region, and each being wound about a common axis passing through both regions, the regions being concentric with the axis, the conductors being substantially the same length, substantially the same shape, and substantially evenly spaced with respect to each other about the common axis.

Abstract: The invention provides a system and a method for dynamic RF inductive and capacitive coupling control to improve plasma substrate processing, as well as for achieving contamination and defect reduction. A plasma reactor includes a substrate support disposed in a chamber. An RF coil is disposed adjacent the chamber for inductively coupling RF energy into the chamber. An electrode is disposed adjacent the chamber and has a voltage for capacitively coupling energy into the chamber. The electrode is spaced from the substrate support and the RF coil. An electrode adjusting member is coupled with the electrode for dynamically adjusting the voltage in the electrode to vary the capacitive coupling for improved plasma ignition and plasma stability. A Faraday shield may be placed between the RF coil and the plasma process region in the chamber to suppress capacitive coupling of the RF coil.

Abstract: A process chamber 35 for processing a substrate 30 and monitoring the process conducted on the substrate 30, comprises a support 45, a gas distributor, and an exhaust 85. The process chamber 35 has a wall comprising a window 130 that allows light to be transmitted therethrough and reduces deposition of process residue from the process gas onto the window 130 during processing of the substrate 30. In one version, the window 130 comprises a transparent plate 135 covered by an overlying mask 140 that has at least one aperture 145 extending through the mask 140 so that light can be transmitted through the aperture 145 and the transparent plate 135.

Abstract: An apparatus 20 and process for treating and conditioning an etching chamber 30, and cleaning a thin, non-homogeneous, etch residue on the walls 45 and components of the etching chamber 30. In the etching step, a substrate 25 is etched in the etching chamber 30 to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber 40 adjacent to the etching chamber 30, and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber 30 to clean the etch residue on the walls 45 and components of the etching chamber.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber of an inductively coupled plasma reactor which processes a semiconductor wafer in the vacuum chamber, the reactor having a gas supply inlet for supplying processing gases into the vacuum chamber, the coil antenna including plural concentric spiral conductive windings, each of the windings having an interior end near an apex of a spiral of the winding and an outer end at a periphery of the spiral of the winding, and a common terminal connected to the interior ends of the plural concentric spiral windings, the RF power source being connected across the terminal and the outer end of each one of the windings.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber of an inductively coupled plasma reactor which processes a semiconductor wafer in the vacuum chamber, the reactor having a gas supply inlet for supplying processing gases into the vacuum chamber, the coil antenna including plural concentric spiral conductive windings, each of the windings having an interior end near an apex of a spiral of the winding and an outer end at a periphery of the spiral of the winding, and a common terminal connected to the interior ends of the plural concentric spiral windings, the RF power source being connected across the terminal and the outer end of each one of the windings.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.