Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a blocking layer of molecules is used to achieve selective epitaxial deposition. In one implementation, a method of processing a mixed-surface substrate comprising an exposed dielectric material and an exposed silicon-based material is provided. The method comprises depositing a blocking layer on the exposed dielectric material and epitaxially and selectively depositing a silicon-containing material layer on the exposed silicon-based material at a temperature of 400 degrees Celsius or greater. The method further involves removing the blocking layer from the dielectric material.

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract: Embodiments disclosed herein are directed to forming MOSFET devices. In particular, one or more pre-silicide treatments are performed on a substrate prior to the deposition of the metal-silicide layer to improve the density and performance of the metal-silicide layer in the MOSFETs. The metal-silicide formation formed with the pre-silicide treatment(s) can occur before or after the formation of metal gates during MOSFET fabrication.

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract: A cyclic dynamic loading-confining pressure instantaneous unloading test device includes a load-supporting frame system, a cyclic dynamic loading system, a confining pressure loading system, a monitoring system, a control system and a data analysis system; the top of the load-supporting frame system is equipped with the cyclic dynamic loading system, the cyclic dynamic loading system is connected with the control system, the bottom of the load-supporting frame system is equipped with the confining pressure loading system, the cyclic dynamic loading system and the confining pressure loading system are equipped with the monitoring system, the monitoring system and the control system are connected with the data analysis system.

Abstract: A windable display module and a display device. The display module includes a plurality of film layers stacked together and at least one connecting layer group arranged between the plurality of film layers. In a stacking direction, the at least one connecting layer group is in contact with its adjacent film layer, so that a variable connecting force is generated between the film layers that are adjacent to the at least one connecting layer group. During a winding process or an unwinding process of the display module, a first connecting force is generated between the film layers that are adjacent to the at least one connecting layer group. During a displaying process of the display module, a second connecting force is generated between at least parts of the film layers that are in a displaying region. The first connecting force is less than the second connecting force.

Abstract: Embodiments of the present invention generally relate to methods of epitaxially growing boron-containing structures. In an embodiment, a method of depositing a structure comprising boron and a Group IV element on a substrate is provided. The method includes heating the substrate at a temperature of about 300° C. or more within a chamber, the substrate having a dielectric material and a single crystal formed thereon. The method further includes flowing a first process gas and a second process gas into the chamber, wherein: the first process gas comprises at least one boron-containing gas comprising a haloborane; and the second process gas comprises at least one Group IV element-containing gas. The method further includes exposing the substrate to the first and second process gases to epitaxially and selectively deposit the structure comprising boron and the Group IV element on the single crystal.

Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

Abstract: Disclosed are a display panel and a sound box. The display panel includes a screen body, a cover plate, a protrusion portion, a first adhesive portion and a second adhesive portion. The first adhesive portion is filled between a region of the cover plate exposed from the protrusion portion and the screen body, and the second adhesive portion is filled between the protrusion portion and the screen body, such that no gap is generated between the cover plate and the screen body and between the protrusion portion and the screen body, so as to eliminate bubbles visible to human eyes after a defoaming treatment of the screen body and the cover plate, thereby improving a display effect of the display panel.

Abstract: Embodiments described herein relate to a method of epitaxial deposition of p-channel metal oxide semiconductor (MMOS) source/drain regions within horizontal gate all around (hGAA) device structures. Combinations of precursors are described herein, which grow of the source/drain regions on predominantly <100> surfaces with reduced or negligible growth on <110> surfaces. Therefore, growth of the source/drain regions is predominantly located on the top surface of a substrate instead of the alternating layers of the hGAA structure. The precursor combinations include a silicon containing precursor, a germanium containing precursor, and a boron containing precursor. At least one of the precursors further includes chlorine.

Abstract: Embodiments of the present disclosure generally relate to methods for forming epitaxial layers on a semiconductor device. In one or more embodiments, methods include removing oxides from a substrate surface during a cleaning process, flowing a processing reagent containing a silicon source and exposing the substrate to the processing reagent during an epitaxy process, and stopping the flow of the processing reagent. The method also includes flowing a purging gas and pumping residues from the processing system, stopping the flow of the purge gas, flowing an etching gas and exposing the substrate to the etching gas. The etching gas contains hydrogen chloride and at least one germanium and/or chlorine compound. The method further includes stopping the flow of the at least one compound while continuing the flow of the hydrogen chloride and exposing the substrate to the hydrogen chloride and stopping the flow of the hydrogen chloride.

Abstract: Embodiments of the present application provide a display terminal and a display control method. When a flexible display screen of the display terminal is bent under a bending force, resistance values of a plurality of sensors in a flexible display panel are also changed under the bending force. An arithmetic unit converts bending information into control information for controlling a display object in the flexible display panel, and a controller controls a dynamic display of the flexible display panel by the control information.

Abstract: A foldable display terminal, including: a flexible display screen, a rotating assembly, and a first shell and a second shell that are connected by the rotating assembly along a first direction, where each of the first shell and the second shell includes a first surface and a second surface that are oppositely disposed. When the first shell and the second shell are driven by the rotating assembly to rotate until the flexible display screen is in a folded state to dispose the first surface of the first shell face to the first surface of the second shell, at least a partial area of the flexible display screen slides to the second surface of the first shell and/or the second surface of the second shell.

Abstract: A screen supporting device includes: a drive component and a supporting component rotationally connected to the drive component. The drive component comprises a rotating shaft and a connecting rod that rotationally connected to the rotating shaft. The drive component and the supporting component are disposed in a non-display surface of the flexible display screen. The connecting rod is fixedly connected to the supporting component. Through the rotating connection between the rotating shaft and the connecting rod, the supporting component and the drive component relatively rotate and move away from each other to fold or expand the flexible display screen.

Abstract: A method and apparatus for the formation of a metal-oxide semiconductor FET (MOSFET) device is disclosed herein. The method of formation includes the utilization of a silicon-germanium seed layer deposited over an n-channel metal-oxide semiconductor (NMOS) device and a p-channel metal-oxide semiconductor (PMOS) device. The seed layer may be one seed layer deposited over both the NMOS source/drain regions and the PMOS source/drain regions or two doped seed layers wherein a first doped seed layer is deposited over the PMOS source/drain regions and a second doped seed layer is deposited over the NMOS source/drain regions. The seed layer enables simultaneous formation of a silicide over both the PMOS source/drain regions and the NMOS source/drain regions. The silicide formation consumes the seed layer and forms a silicide layer which varies in composition depending upon the composition of the absorbed seed layer.

Abstract: Implementations of the present disclosure generally relate to methods for forming a transistor. More specifically, implementations described herein generally relate to methods for forming a source/drain contact. In one implementation, the method includes forming a trench in a dielectric material to expose a source/drain region of a transistor, performing a pre-clean process on the exposed source/drain region, forming a doped semiconductor layer on the source/drain region by an epitaxial deposition process, and fill the trench with a conductor. The doped semiconductor layer has a lower electrical resistance than the source/drain region due to a higher dopant concentration in the doped semiconductor layer. As a result, the contact resistance of the source/drain contact is reduced.

Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

Abstract: Implementations of the present disclosure generally relate to methods for forming a transistor. More specifically, implementations described herein generally relate to methods for forming a source/drain contact. In one implementation, the method includes forming a trench in a dielectric material to expose a source/drain region of a transistor, performing a pre-clean process on the exposed source/drain region, forming a doped semiconductor layer on the source/drain region by an epitaxial deposition process, and fill the trench with a conductor. The doped semiconductor layer has a lower electrical resistance than the source/drain region due to a higher dopant concentration in the doped semiconductor layer. As a result, the contact resistance of the source/drain contact is reduced.

Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.