Patents by Inventor Xuebin Li
Xuebin Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11343923Abstract: A screen supporting device includes: a drive component and a supporting component rotationally connected to the drive component. The drive component comprises a rotating shaft and a connecting rod that rotationally connected to the rotating shaft. The drive component and the supporting component are disposed in a non-display surface of the flexible display screen. The connecting rod is fixedly connected to the supporting component. Through the rotating connection between the rotating shaft and the connecting rod, the supporting component and the drive component relatively rotate and move away from each other to fold or expand the flexible display screen.Type: GrantFiled: May 5, 2020Date of Patent: May 24, 2022Assignee: YUNGU (GU'AN) TECHNOLOGY CO., LTD.Inventors: Hongqi Hou, Yongfeng Zhao, Fu Liao, Liwei Ding, Xuebin Li, Zhaoji Zhu
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Publication number: 20220139784Abstract: A method and apparatus for the formation of a metal-oxide semiconductor FET (MOSFET) device is disclosed herein. The method of formation includes the utilization of a silicon-germanium seed layer deposited over an n-channel metal-oxide semiconductor (NMOS) device and a p-channel metal-oxide semiconductor (PMOS) device. The seed layer may be one seed layer deposited over both the NMOS source/drain regions and the PMOS source/drain regions or two doped seed layers wherein a first doped seed layer is deposited over the PMOS source/drain regions and a second doped seed layer is deposited over the NMOS source/drain regions. The seed layer enables simultaneous formation of a silicide over both the PMOS source/drain regions and the NMOS source/drain regions. The silicide formation consumes the seed layer and forms a silicide layer which varies in composition depending upon the composition of the absorbed seed layer.Type: ApplicationFiled: October 30, 2020Publication date: May 5, 2022Inventor: Xuebin LI
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Publication number: 20220093749Abstract: Implementations of the present disclosure generally relate to methods for forming a transistor. More specifically, implementations described herein generally relate to methods for forming a source/drain contact. In one implementation, the method includes forming a trench in a dielectric material to expose a source/drain region of a transistor, performing a pre-clean process on the exposed source/drain region, forming a doped semiconductor layer on the source/drain region by an epitaxial deposition process, and fill the trench with a conductor. The doped semiconductor layer has a lower electrical resistance than the source/drain region due to a higher dopant concentration in the doped semiconductor layer. As a result, the contact resistance of the source/drain contact is reduced.Type: ApplicationFiled: December 3, 2021Publication date: March 24, 2022Inventors: Gaurav THAREJA, Xuebin LI, Abhishek DUBE, Yi-Chiau HUANG, Tushar Vidyadhar MANDREKAR, Yuan-hui LO, Patricia M. LIU, Sanjay NATARAJAN, Saurabh CHOPRA
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Publication number: 20220005704Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.Type: ApplicationFiled: September 17, 2021Publication date: January 6, 2022Inventors: Xuebin LI, Wei LIU, Gaurav THAREJA, Shashank SHARMA, Patricia M. LIU, Schubert CHU
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Publication number: 20220005705Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.Type: ApplicationFiled: September 17, 2021Publication date: January 6, 2022Inventors: Xuebin LI, Wei LIU, Gaurav THAREJA, Shashank SHARMA, Patricia M. LIU, Schubert CHU
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Patent number: 11195923Abstract: Implementations of the present disclosure generally relate to methods for forming a transistor. More specifically, implementations described herein generally relate to methods for forming a source/drain contact. In one implementation, the method includes forming a trench in a dielectric material to expose a source/drain region of a transistor, performing a pre-clean process on the exposed source/drain region, forming a doped semiconductor layer on the source/drain region by an epitaxial deposition process, and fill the trench with a conductor. The doped semiconductor layer has a lower electrical resistance than the source/drain region due to a higher dopant concentration in the doped semiconductor layer. As a result, the contact resistance of the source/drain contact is reduced.Type: GrantFiled: November 8, 2019Date of Patent: December 7, 2021Assignee: Applied Materials, Inc.Inventors: Gaurav Thareja, Xuebin Li, Abhishek Dube, Yi-Chiau Huang, Tushar Vidyadhar Mandrekar, Andy Lo, Patricia M. Liu, Sanjay Natarajan, Saurabh Chopra
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Patent number: 11152479Abstract: The present disclosure generally relates to methods for forming a semiconductor device, a semiconductor device, and a processing chamber. The method includes forming a source/drain region in a processing system, forming a doped semiconductor layer on the source/drain region in the processing system, forming a metal silicide layer, forming a dielectric material, forming a trench in the dielectric material, and filling the trench with a conductor. The source/drain region, the doped semiconductor layer, and the metal silicide layer are formed without breaking vacuum. A semiconductor device includes a plurality of layers, and the semiconductor device has reduced contact resistance. A processing system is configured to perform the method and form the semiconductor device.Type: GrantFiled: January 27, 2020Date of Patent: October 19, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Gaurav Thareja, Xuebin Li, Abhishek Dube, Yi-Chiau Huang, Andy Lo, Patricia M. Liu, Sanjay Natarajan, Saurabh Chopra
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Patent number: 11152221Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.Type: GrantFiled: February 7, 2020Date of Patent: October 19, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Xuebin Li, Wei Liu, Gaurav Thareja, Shashank Sharma, Patricia M. Liu, Schubert Chu
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Patent number: 11081358Abstract: Embodiments disclosed herein are directed to forming MOSFET devices. In particular, one or more pre-silicide treatments are performed on a substrate prior to the deposition of the metal-silicide layer to improve the density and performance of the metal-silicide layer in the MOSFETs. The metal-silicide formation formed with the pre-silicide treatment(s) can occur before or after the formation of metal gates during MOSFET fabrication.Type: GrantFiled: May 1, 2019Date of Patent: August 3, 2021Assignee: Applied Materials, Inc.Inventors: Xuebin Li, Errol Antonio C. Sanchez, Patricia M. Liu
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Patent number: 11078791Abstract: It discloses a grouting bolt-cable composite beam and supporting method for advanced support of fractured surrounding rock in deep coal mines. The quadrate plates are fixed at both ends of the steel beam, the anchor cable holes are arranged in the center of the steel beam and the quadrate plates, and the diameter of anchor bolt holes should be larger than that of the grouting cables. There are four anchor bolt holes on each quadrate plate, and each anchor bolt hole corresponds to a anchor plate, the horizontal surface of the anchor plate is close to the quadrate plate, and the arc parts of the four anchor plates are all facing the center of the quadrate plate.Type: GrantFiled: December 3, 2020Date of Patent: August 3, 2021Assignee: SHANDONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Xuesheng Liu, Deyuan Fan, Yunliang Tan, Kang Yang, Shilin Song, Yunhao Wu, Xuebin Li, Xin Wang
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Patent number: 11048020Abstract: The present invention discloses a method of simultaneously acquiring vertical profiles of multiple atmospheric parameters. Measuring devices based on multiple principles and capable of measuring multiple parameters simultaneously are fixed on a cable of an aerostat at specified distance decided by measurement task, each measuring device finishes measuring the atmospheric parameters at its altitude thereof, and transmits data to a ground data acquisition and processing device in real time, so as to synchronously acquire the real-time measured profiles of multiple atmospheric parameters. The profile data does not have any assumption, and standard data can be provided to a ground remote sensing device like radar for measuring at the same place while regular meteorological parameters and atmospheric contamination data are provided to atmospheric and environmental governance departments.Type: GrantFiled: April 28, 2017Date of Patent: June 29, 2021Assignee: HEFEI INSTITUTE OF PHYSICAL SCIENCE, CHINESE ACADEMY OF SCHIENCESInventors: Shiyong Shao, Yong Han, Zongbo Shi, Daming Yu, Wenyue Zhu, Xuebin Li
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Patent number: 11037838Abstract: The systems and methods discussed herein are for a cluster tool that can be used for MOSFET device fabrication, including NMOS and PMOS devices. The cluster tool includes process chambers for pre-cleaning, metal-silicide or metal-germanide film formation, and surface protection operations such as capping and nitridation. The cluster tool can include one or more process chambers configured to form a source and a drain. The devices fabricated in the cluster tool are fabricated to have at least one protective layer formed over the metal-silicide or metal-germanide film to protect the film from contamination during handling and transfer to separate systems.Type: GrantFiled: September 3, 2019Date of Patent: June 15, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Xuebin Li, Schubert S. Chu, Errol Antonio C. Sanchez, Patricia M. Liu, Gaurav Thareja, Raymond Hoiman Hung
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Publication number: 20210175115Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: ApplicationFiled: February 23, 2021Publication date: June 10, 2021Inventors: Anhthu NGO, Zuoming ZHU, Balasubramanian RAMACHANDRAN, Paul BRILLHART, Edric TONG, Anzhong CHANG, Kin Pong LO, Kartik SHAH, Schubert S. CHU, Zhepeng CONG, James Francis MACK, Nyi O. MYO, Kevin Joseph BAUTISTA, Xuebin LI, Yi-Chiau HUANG, Zhiyuan YE
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Patent number: 10971366Abstract: Methods for depositing a metal silicide are provide and include heating a substrate having a silicon-containing surface to a deposition temperature, and exposing the substrate to a deposition gas to deposit a silicide film on the silicon-containing surface during a chemical vapor deposition process. The deposition gas contains a silicon precursor, a titanium or other metal precursor, and a phosphorus or other non-metal precursor.Type: GrantFiled: May 20, 2019Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Xuebin Li, Patricia M. Liu
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Publication number: 20210087931Abstract: It discloses a grouting bolt-cable composite beam and supporting method for advanced support of fractured surrounding rock in deep coal mines. The quadrate plates are fixed at both ends of the steel beam, the anchor cable holes are arranged in the center of the steel beam and the quadrate plates, and the diameter of anchor bolt holes should be larger than that of the grouting cables. There are four anchor bolt holes on each quadrate plate, and each anchor bolt hole corresponds to a anchor plate, the horizontal surface of the anchor plate is close to the quadrate plate, and the arc parts of the four anchor plates are all facing the center of the quadrate plate.Type: ApplicationFiled: December 3, 2020Publication date: March 25, 2021Inventors: Xuesheng Liu, Deyuan Fan, Yunliang Tan, Kang Yang, Shilin Song, Yunhao Wu, Xuebin Li, Xin Wang
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Patent number: 10930543Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: GrantFiled: August 23, 2018Date of Patent: February 23, 2021Assignee: Applied Materials, Inc.Inventors: Anhthu Ngo, Zuoming Zhu, Balasubramanian Ramachandran, Paul Brillhart, Edric Tong, Anzhong Chang, Kin Pong Lo, Kartik Shah, Schubert S. Chu, Zhepeng Cong, James Francis Mack, Nyi O. Myo, Kevin Joseph Bautista, Xuebin Li, Yi-Chiau Huang, Zhiyuan Ye
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Patent number: 10888004Abstract: The display box includes a box body including an upper cover, a rotating shaft rotatably connected with the upper cover, and a support plate disposed on the upper surface of the upper cover via the rotating shaft to fix an exhibit. The support plate is rotatable with the rotating shaft to make the exhibit be at a preset angle with respect to the upper surface.Type: GrantFiled: April 10, 2019Date of Patent: January 5, 2021Assignee: Yungu (Gu'an) Technology Co., Ltd.Inventors: Zhaoji Zhu, Liwei Ding, Fu Liao, Hongqi Hou, Xuebin Li, Desong Yan, Yuhua Wu, Liuyang Wang, Kanglong Sun
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Publication number: 20200371604Abstract: Embodiments of the present application provide a display terminal and a display control method. When a flexible display screen of the display terminal is bent under a bending force, resistance values of a plurality of sensors in a flexible display panel are also changed under the bending force. An arithmetic unit converts bending information into control information for controlling a display object in the flexible display panel, and a controller controls a dynamic display of the flexible display panel by the control information.Type: ApplicationFiled: August 11, 2020Publication date: November 26, 2020Applicant: Yungu (Gu'an) Technology Co., Ltd.Inventors: Xuebin LI, Liwei DING, Fu LIAO, Xu YANG, Zhaoji ZHU
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Publication number: 20200283896Abstract: Methods for forming silicide materials and source/drain devices are provided. The methods and devices can include methods for forming silicide films, including metal silicide and metal germanide silicide films, on germanium-containing film, such as used as a pMOS layer in a source/drain contact region. In one or more embodiments, a method of processing a substrate includes positioning the substrate within a processing chamber, where the substrate contains one or more germanium-containing films, heating the substrate to a temperature of about 100° C. to about 600° C., and exposing the substrate to one or more metal precursors and one or more silicon precursors during a vapor deposition process and forming a silicide film on the germanium-containing film, where the silicide film has a conformality of about 1% to about 50% of an average thickness of the silicide film.Type: ApplicationFiled: February 7, 2020Publication date: September 10, 2020Inventors: Xuebin LI, Errol Antonio C. SANCHEZ, Saurabh CHOPRA
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Publication number: 20200278475Abstract: The present invention discloses a method of simultaneously acquiring vertical profiles of multiple atmospheric parameters. Measuring devices based on multiple principles and capable of measuring multiple parameters simultaneously are fixed on a cable of an aerostat at specified distance decided by measurement task, each measuring device finishes measuring the atmospheric parameters at its altitude thereof, and transmits data to a ground data acquisition and processing device in real time, so as to synchronously acquire the real-time measured profiles of multiple atmospheric parameters. The profile data does not have any assumption, and standard data can be provided to a ground remote sensing device like radar for measuring at the same place while regular meteorological parameters and atmospheric contamination data are provided to atmospheric and environmental governance departments.Type: ApplicationFiled: April 28, 2017Publication date: September 3, 2020Inventors: Shiyong Shao, Yong Han, Zongbo Shi, Daming Yu, Wenyue Zhu, Xuebin Li