Patents by Inventor Xuebin Li

Xuebin Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11343923
    Abstract: A screen supporting device includes: a drive component and a supporting component rotationally connected to the drive component. The drive component comprises a rotating shaft and a connecting rod that rotationally connected to the rotating shaft. The drive component and the supporting component are disposed in a non-display surface of the flexible display screen. The connecting rod is fixedly connected to the supporting component. Through the rotating connection between the rotating shaft and the connecting rod, the supporting component and the drive component relatively rotate and move away from each other to fold or expand the flexible display screen.
    Type: Grant
    Filed: May 5, 2020
    Date of Patent: May 24, 2022
    Assignee: YUNGU (GU'AN) TECHNOLOGY CO., LTD.
    Inventors: Hongqi Hou, Yongfeng Zhao, Fu Liao, Liwei Ding, Xuebin Li, Zhaoji Zhu
  • Publication number: 20220139784
    Abstract: A method and apparatus for the formation of a metal-oxide semiconductor FET (MOSFET) device is disclosed herein. The method of formation includes the utilization of a silicon-germanium seed layer deposited over an n-channel metal-oxide semiconductor (NMOS) device and a p-channel metal-oxide semiconductor (PMOS) device. The seed layer may be one seed layer deposited over both the NMOS source/drain regions and the PMOS source/drain regions or two doped seed layers wherein a first doped seed layer is deposited over the PMOS source/drain regions and a second doped seed layer is deposited over the NMOS source/drain regions. The seed layer enables simultaneous formation of a silicide over both the PMOS source/drain regions and the NMOS source/drain regions. The silicide formation consumes the seed layer and forms a silicide layer which varies in composition depending upon the composition of the absorbed seed layer.
    Type: Application
    Filed: October 30, 2020
    Publication date: May 5, 2022
    Inventor: Xuebin LI
  • Publication number: 20220093749
    Abstract: Implementations of the present disclosure generally relate to methods for forming a transistor. More specifically, implementations described herein generally relate to methods for forming a source/drain contact. In one implementation, the method includes forming a trench in a dielectric material to expose a source/drain region of a transistor, performing a pre-clean process on the exposed source/drain region, forming a doped semiconductor layer on the source/drain region by an epitaxial deposition process, and fill the trench with a conductor. The doped semiconductor layer has a lower electrical resistance than the source/drain region due to a higher dopant concentration in the doped semiconductor layer. As a result, the contact resistance of the source/drain contact is reduced.
    Type: Application
    Filed: December 3, 2021
    Publication date: March 24, 2022
    Inventors: Gaurav THAREJA, Xuebin LI, Abhishek DUBE, Yi-Chiau HUANG, Tushar Vidyadhar MANDREKAR, Yuan-hui LO, Patricia M. LIU, Sanjay NATARAJAN, Saurabh CHOPRA
  • Publication number: 20220005704
    Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.
    Type: Application
    Filed: September 17, 2021
    Publication date: January 6, 2022
    Inventors: Xuebin LI, Wei LIU, Gaurav THAREJA, Shashank SHARMA, Patricia M. LIU, Schubert CHU
  • Publication number: 20220005705
    Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.
    Type: Application
    Filed: September 17, 2021
    Publication date: January 6, 2022
    Inventors: Xuebin LI, Wei LIU, Gaurav THAREJA, Shashank SHARMA, Patricia M. LIU, Schubert CHU
  • Patent number: 11195923
    Abstract: Implementations of the present disclosure generally relate to methods for forming a transistor. More specifically, implementations described herein generally relate to methods for forming a source/drain contact. In one implementation, the method includes forming a trench in a dielectric material to expose a source/drain region of a transistor, performing a pre-clean process on the exposed source/drain region, forming a doped semiconductor layer on the source/drain region by an epitaxial deposition process, and fill the trench with a conductor. The doped semiconductor layer has a lower electrical resistance than the source/drain region due to a higher dopant concentration in the doped semiconductor layer. As a result, the contact resistance of the source/drain contact is reduced.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: December 7, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Gaurav Thareja, Xuebin Li, Abhishek Dube, Yi-Chiau Huang, Tushar Vidyadhar Mandrekar, Andy Lo, Patricia M. Liu, Sanjay Natarajan, Saurabh Chopra
  • Patent number: 11152479
    Abstract: The present disclosure generally relates to methods for forming a semiconductor device, a semiconductor device, and a processing chamber. The method includes forming a source/drain region in a processing system, forming a doped semiconductor layer on the source/drain region in the processing system, forming a metal silicide layer, forming a dielectric material, forming a trench in the dielectric material, and filling the trench with a conductor. The source/drain region, the doped semiconductor layer, and the metal silicide layer are formed without breaking vacuum. A semiconductor device includes a plurality of layers, and the semiconductor device has reduced contact resistance. A processing system is configured to perform the method and form the semiconductor device.
    Type: Grant
    Filed: January 27, 2020
    Date of Patent: October 19, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Gaurav Thareja, Xuebin Li, Abhishek Dube, Yi-Chiau Huang, Andy Lo, Patricia M. Liu, Sanjay Natarajan, Saurabh Chopra
  • Patent number: 11152221
    Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: October 19, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xuebin Li, Wei Liu, Gaurav Thareja, Shashank Sharma, Patricia M. Liu, Schubert Chu
  • Patent number: 11081358
    Abstract: Embodiments disclosed herein are directed to forming MOSFET devices. In particular, one or more pre-silicide treatments are performed on a substrate prior to the deposition of the metal-silicide layer to improve the density and performance of the metal-silicide layer in the MOSFETs. The metal-silicide formation formed with the pre-silicide treatment(s) can occur before or after the formation of metal gates during MOSFET fabrication.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: August 3, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Xuebin Li, Errol Antonio C. Sanchez, Patricia M. Liu
  • Patent number: 11078791
    Abstract: It discloses a grouting bolt-cable composite beam and supporting method for advanced support of fractured surrounding rock in deep coal mines. The quadrate plates are fixed at both ends of the steel beam, the anchor cable holes are arranged in the center of the steel beam and the quadrate plates, and the diameter of anchor bolt holes should be larger than that of the grouting cables. There are four anchor bolt holes on each quadrate plate, and each anchor bolt hole corresponds to a anchor plate, the horizontal surface of the anchor plate is close to the quadrate plate, and the arc parts of the four anchor plates are all facing the center of the quadrate plate.
    Type: Grant
    Filed: December 3, 2020
    Date of Patent: August 3, 2021
    Assignee: SHANDONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Xuesheng Liu, Deyuan Fan, Yunliang Tan, Kang Yang, Shilin Song, Yunhao Wu, Xuebin Li, Xin Wang
  • Patent number: 11048020
    Abstract: The present invention discloses a method of simultaneously acquiring vertical profiles of multiple atmospheric parameters. Measuring devices based on multiple principles and capable of measuring multiple parameters simultaneously are fixed on a cable of an aerostat at specified distance decided by measurement task, each measuring device finishes measuring the atmospheric parameters at its altitude thereof, and transmits data to a ground data acquisition and processing device in real time, so as to synchronously acquire the real-time measured profiles of multiple atmospheric parameters. The profile data does not have any assumption, and standard data can be provided to a ground remote sensing device like radar for measuring at the same place while regular meteorological parameters and atmospheric contamination data are provided to atmospheric and environmental governance departments.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: June 29, 2021
    Assignee: HEFEI INSTITUTE OF PHYSICAL SCIENCE, CHINESE ACADEMY OF SCHIENCES
    Inventors: Shiyong Shao, Yong Han, Zongbo Shi, Daming Yu, Wenyue Zhu, Xuebin Li
  • Patent number: 11037838
    Abstract: The systems and methods discussed herein are for a cluster tool that can be used for MOSFET device fabrication, including NMOS and PMOS devices. The cluster tool includes process chambers for pre-cleaning, metal-silicide or metal-germanide film formation, and surface protection operations such as capping and nitridation. The cluster tool can include one or more process chambers configured to form a source and a drain. The devices fabricated in the cluster tool are fabricated to have at least one protective layer formed over the metal-silicide or metal-germanide film to protect the film from contamination during handling and transfer to separate systems.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: June 15, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xuebin Li, Schubert S. Chu, Errol Antonio C. Sanchez, Patricia M. Liu, Gaurav Thareja, Raymond Hoiman Hung
  • Publication number: 20210175115
    Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.
    Type: Application
    Filed: February 23, 2021
    Publication date: June 10, 2021
    Inventors: Anhthu NGO, Zuoming ZHU, Balasubramanian RAMACHANDRAN, Paul BRILLHART, Edric TONG, Anzhong CHANG, Kin Pong LO, Kartik SHAH, Schubert S. CHU, Zhepeng CONG, James Francis MACK, Nyi O. MYO, Kevin Joseph BAUTISTA, Xuebin LI, Yi-Chiau HUANG, Zhiyuan YE
  • Patent number: 10971366
    Abstract: Methods for depositing a metal silicide are provide and include heating a substrate having a silicon-containing surface to a deposition temperature, and exposing the substrate to a deposition gas to deposit a silicide film on the silicon-containing surface during a chemical vapor deposition process. The deposition gas contains a silicon precursor, a titanium or other metal precursor, and a phosphorus or other non-metal precursor.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: April 6, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Xuebin Li, Patricia M. Liu
  • Publication number: 20210087931
    Abstract: It discloses a grouting bolt-cable composite beam and supporting method for advanced support of fractured surrounding rock in deep coal mines. The quadrate plates are fixed at both ends of the steel beam, the anchor cable holes are arranged in the center of the steel beam and the quadrate plates, and the diameter of anchor bolt holes should be larger than that of the grouting cables. There are four anchor bolt holes on each quadrate plate, and each anchor bolt hole corresponds to a anchor plate, the horizontal surface of the anchor plate is close to the quadrate plate, and the arc parts of the four anchor plates are all facing the center of the quadrate plate.
    Type: Application
    Filed: December 3, 2020
    Publication date: March 25, 2021
    Inventors: Xuesheng Liu, Deyuan Fan, Yunliang Tan, Kang Yang, Shilin Song, Yunhao Wu, Xuebin Li, Xin Wang
  • Patent number: 10930543
    Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: February 23, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Anhthu Ngo, Zuoming Zhu, Balasubramanian Ramachandran, Paul Brillhart, Edric Tong, Anzhong Chang, Kin Pong Lo, Kartik Shah, Schubert S. Chu, Zhepeng Cong, James Francis Mack, Nyi O. Myo, Kevin Joseph Bautista, Xuebin Li, Yi-Chiau Huang, Zhiyuan Ye
  • Patent number: 10888004
    Abstract: The display box includes a box body including an upper cover, a rotating shaft rotatably connected with the upper cover, and a support plate disposed on the upper surface of the upper cover via the rotating shaft to fix an exhibit. The support plate is rotatable with the rotating shaft to make the exhibit be at a preset angle with respect to the upper surface.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: January 5, 2021
    Assignee: Yungu (Gu'an) Technology Co., Ltd.
    Inventors: Zhaoji Zhu, Liwei Ding, Fu Liao, Hongqi Hou, Xuebin Li, Desong Yan, Yuhua Wu, Liuyang Wang, Kanglong Sun
  • Publication number: 20200371604
    Abstract: Embodiments of the present application provide a display terminal and a display control method. When a flexible display screen of the display terminal is bent under a bending force, resistance values of a plurality of sensors in a flexible display panel are also changed under the bending force. An arithmetic unit converts bending information into control information for controlling a display object in the flexible display panel, and a controller controls a dynamic display of the flexible display panel by the control information.
    Type: Application
    Filed: August 11, 2020
    Publication date: November 26, 2020
    Applicant: Yungu (Gu'an) Technology Co., Ltd.
    Inventors: Xuebin LI, Liwei DING, Fu LIAO, Xu YANG, Zhaoji ZHU
  • Publication number: 20200283896
    Abstract: Methods for forming silicide materials and source/drain devices are provided. The methods and devices can include methods for forming silicide films, including metal silicide and metal germanide silicide films, on germanium-containing film, such as used as a pMOS layer in a source/drain contact region. In one or more embodiments, a method of processing a substrate includes positioning the substrate within a processing chamber, where the substrate contains one or more germanium-containing films, heating the substrate to a temperature of about 100° C. to about 600° C., and exposing the substrate to one or more metal precursors and one or more silicon precursors during a vapor deposition process and forming a silicide film on the germanium-containing film, where the silicide film has a conformality of about 1% to about 50% of an average thickness of the silicide film.
    Type: Application
    Filed: February 7, 2020
    Publication date: September 10, 2020
    Inventors: Xuebin LI, Errol Antonio C. SANCHEZ, Saurabh CHOPRA
  • Publication number: 20200278475
    Abstract: The present invention discloses a method of simultaneously acquiring vertical profiles of multiple atmospheric parameters. Measuring devices based on multiple principles and capable of measuring multiple parameters simultaneously are fixed on a cable of an aerostat at specified distance decided by measurement task, each measuring device finishes measuring the atmospheric parameters at its altitude thereof, and transmits data to a ground data acquisition and processing device in real time, so as to synchronously acquire the real-time measured profiles of multiple atmospheric parameters. The profile data does not have any assumption, and standard data can be provided to a ground remote sensing device like radar for measuring at the same place while regular meteorological parameters and atmospheric contamination data are provided to atmospheric and environmental governance departments.
    Type: Application
    Filed: April 28, 2017
    Publication date: September 3, 2020
    Inventors: Shiyong Shao, Yong Han, Zongbo Shi, Daming Yu, Wenyue Zhu, Xuebin Li