Patents by Inventor Xuefei Tang
Xuefei Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120040496Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.Type: ApplicationFiled: October 21, 2011Publication date: February 16, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Ming Sun, Michael Xuefei Tang, Insik Jin, Venkatram Venkatasamy, Philip George Pitcher, Nurul Amin
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Publication number: 20120032131Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.Type: ApplicationFiled: October 21, 2011Publication date: February 9, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Ming Sun, Michael Xuefei Tang, Insik Jin, Venkatram Venkatasamy, Philip George Pitcher, Nurul Amin
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Patent number: 8058646Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.Type: GrantFiled: February 23, 2009Date of Patent: November 15, 2011Assignee: Seagate Technology LLCInventors: Ming Sun, Michael Xuefei Tang, Insik Jin, Venkatram Venkatasamy, Philip George Pitcher, Nurul Amin
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Publication number: 20110228597Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.Type: ApplicationFiled: May 27, 2011Publication date: September 22, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Xiaohua Lou, Haiwen Xi, Michael Xuefei Tang
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Patent number: 8004875Abstract: A data storage device and associated method for providing current magnitude compensation for memory cells in a data storage array. In accordance with some embodiments, unit cells are connected between spaced apart first and second control lines of common length. An equalization circuit is configured to respectively apply a common current magnitude through each of the unit cells by adjusting a voltage applied to the cells in relation to a location of each of the cells along the first and second control lines.Type: GrantFiled: July 13, 2009Date of Patent: August 23, 2011Assignee: Seagate Technology LLCInventors: Markus Jan Peter Siegert, Michael Xuefei Tang, Andrew John Carter, Alan Xuguang Wang
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Patent number: 7999337Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.Type: GrantFiled: July 13, 2009Date of Patent: August 16, 2011Assignee: Seagate Technology LLCInventors: Yuankai Zheng, Xiaohua Lou, Haiwen Xi, Michael Xuefei Tang
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Publication number: 20110188293Abstract: A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.Type: ApplicationFiled: April 14, 2011Publication date: August 4, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Wei Tian, Insik Jin, Venugopalan Vaithyanathan, Haiwen Xi, Michael Xuefei Tang, Brian Lee
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Patent number: 7977722Abstract: Non-volatile memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A second insulating layer is over the substrate and between the source region and drain region. A solid electrolyte layer is between the first insulating layer and second insulating layer. The solid electrolyte layer has a capacitance that is controllable between at least two states. A first electrode is electrically coupled to a first side of the solid electrolyte layer and is electrically coupled to a voltage source. A second electrode is electrically coupled to a second side of the solid electrolyte layer and is electrically coupled to the voltage source. Multi-bit memory units are also disclosed.Type: GrantFiled: May 20, 2008Date of Patent: July 12, 2011Assignee: Seagate Technology LLCInventors: Xuguang Wang, Shuiyuan Huang, Dimitar V. Dimitrov, Michael Xuefei Tang, Song S. Xue
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Patent number: 7969771Abstract: Various embodiments of the present invention are generally directed to an apparatus and method associated with a semiconductor device with thermally coupled phase change layers. The semiconductor device comprises a first phase change layer selectively configurable in a relatively low resistance crystalline phase and a relatively high resistance amorphous phase, and a second phase change layer thermally coupled to the first phase change layer. The second phase change layer is characterized as a metal-insulator transition material. A programming pulse is applied to the semiconductor device from a first electrode layer to a second electrode layer to provide the first phase change layer with a selected resistance.Type: GrantFiled: September 30, 2008Date of Patent: June 28, 2011Assignee: Seagate Technology LLCInventors: Haiwen Xi, Michael Xuefei Tang, Yuankai Zheng, Patrick Ryan
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Publication number: 20110149642Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.Type: ApplicationFiled: March 3, 2011Publication date: June 23, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Xiaohua Lou, Haiwen Xi, Michael Xuefei Tang
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Publication number: 20110149641Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.Type: ApplicationFiled: March 3, 2011Publication date: June 23, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Xiaohua Lou, Haiwen Xi, Michael Xuefei Tang
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Patent number: 7944009Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.Type: GrantFiled: December 8, 2010Date of Patent: May 17, 2011Assignee: Seagate Technology LLCInventors: Song S. Xue, Paul E. Anderson, Michael C. Kautzky, Xuefei Tang, Patrick J. Ryan
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Patent number: 7936585Abstract: A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.Type: GrantFiled: July 13, 2009Date of Patent: May 3, 2011Assignee: Seagate Technology LLCInventors: Wei Tian, Insik Jin, Venugopalan Vaithyanathan, Haiwen Xi, Michael Xuefei Tang, Brian Lee
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Publication number: 20110090733Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer separated from a first pinned magnetic layer by a first non-magnetic electrically conducting layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer separated from a second pinned magnetic layer by an oxide barrier layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.Type: ApplicationFiled: December 21, 2010Publication date: April 21, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Haiwen Xi, Hongyue Liu, Michael Xuefei Tang, Antoine Khoueir, Song S. Xue
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Publication number: 20110075472Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.Type: ApplicationFiled: December 8, 2010Publication date: March 31, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Song S. Xue, Paul E. Anderson, Michael C. Kautzky, Xuefei Tang, Patrick J. Ryan
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Publication number: 20110037047Abstract: A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.Type: ApplicationFiled: October 29, 2010Publication date: February 17, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Venkatram Venkatasamy, Ming Sun, Michael Xuefei Tang
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Publication number: 20110026321Abstract: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.Type: ApplicationFiled: October 14, 2010Publication date: February 3, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Michael Xuefei Tang, Ming Sun, Dimitar V. Dimitrov, Patrick Ryan
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Patent number: 7881098Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line and a magnetic tunnel junction data cell electrically coupled between a read bit line and a read source line. A write current passing through the giant magnetoresistance cell switches the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell. The magnetic tunnel junction data cell is read by a read current passing though the magnetic tunnel junction data cell.Type: GrantFiled: August 26, 2008Date of Patent: February 1, 2011Assignee: Seagate Technology LLCInventors: Haiwen Xi, Hongyue Liu, Michael Xuefei Tang, Antoine Khoueir, Song S. Xue
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Patent number: 7872323Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.Type: GrantFiled: December 12, 2006Date of Patent: January 18, 2011Assignee: Seagate Technology LLCInventors: Song S. Xue, Paul E. Anderson, Michael C. Kautzky, Xuefei Tang, Patrick J. Ryan
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Publication number: 20110007430Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Xiaohua Lou, Haiwen Xi, Michael Xuefei Tang