Abstract: A magnetic writer includes a write pole configured to reduce a skew effect during writing to a magnetic medium. A trailing portion of the write pole has a magnetic moment greater than a leading portion of the write pole.

Abstract: A magnetic writer includes a write pole configured to reduce a skew effect during writing to a magnetic medium. A trailing portion of the write pole has a magnetic moment greater than a leading portion of the write pole.

Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.

Abstract: The present invention provides a tunneling giant magnetoresistance (TGMR) sensor. The sensor including an active region. The active region having a first bias layer. The sensor also including a passive region. The passive region has an insulating layer and a second bias layer. Furthermore, the insulating layer is positioned between the active region and the second bias layer.

Abstract: A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.

Abstract: A transducing head includes a multilayered magnetoresistive sensor having an air bearing sidewall opposite aback sidewall and a first sidewall opposite a second sidewall. A specular layer is positioned on at least one of the air bearing sidewall, the back sidewall, the first sidewall, and the second sidewall. Each sidewall is transverse to the layers of the magnetoresistive sensor.

Abstract: The magnetoresistive sensor has a bottom shield, a nonmagnetic metallic pedestal, a bottom reader gap, a biasing element, a magnetoresistive stack, current leads, a top reader gap, and a top shield. The nonmagnetic metallic pedestal is positioned on a portion of the bottom shield and the nonmagnetic metallic pedestal has a width less than the width of the bottom shield. The bottom reader gap is positioned on the nonmagnetic metallic pedestal and on the bottom shield such that a portion of the bottom reader gap over the nonmagnetic metallic pedestal is raised relative to portions of the bottom reader gap not over the nonmagnetic metallic pedestal.

Abstract: A structure for stabilizing the active region of the magnetic sensor comprises a hard ferromagnetic element adjacent to a biasing multilayer element placed on either side of the active region of the magnetic sensor. The biasing multilayer element includes soft ferromagnetic and anti-ferromagnetic layers such that the biasing strength applied to the active region of the magnetic sensor is tuneable by adjusting the length of the soft ferromagnetic layer or layers as well as the insertion of spacer layers between the soft ferromagnetic materials and the anti-ferromagnetic layers. The inventive structure provides longitudinal bias to the active region with improved domain control, signal amplitude and side-reading properties.

Abstract: A transducing head includes a multilayered magnetoresistive sensor having an air bearing sidewall opposite aback sidewall and a first sidewall opposite a second sidewall. A specular layer is positioned on at least one of the air bearing sidewall, the back sidewall, the first sidewall, and the second sidewall. Each sidewall is transverse to the layers of the magnetoresistive sensor.

Abstract: A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.

Abstract: A giant magnetoresistive spin valve for use in a magnetic read head includes a ferromagnetic free layer and a multilayer cap layer. The free layer has a rotatable magnetic moment. The multilayer cap layer is positioned adjacent to the free layer for increasing electron specular scattering of the free layer.

Abstract: The magnetoresistive sensor has a bottom shield, a nonmagnetic metallic pedestal, a bottom reader gap, a biasing element, a magnetoresistive stack, current leads, a top reader gap, and a top shield. The nonmagnetic metallic pedestal is positioned on a portion of the bottom shield and the nonmagnetic metallic pedestal has a width less than the width of the bottom shield. The bottom reader gap is positioned on the nonmagnetic metallic pedestal and on the bottom shield such that a portion of the bottom reader gap over the nonmagnetic metallic pedestal is raised relative to portions of the bottom reader gap not over the nonmagnetic metallic pedestal.

Abstract: The invention includes methods of manufacturing improved spin valve sensors and the resulting sensors. The method includes the step of depositing a spacer layer in an environment containing oxygen. Preferably, the spacer layer is deposited in an environment containing argon and from about 0.5 to 25,000 ppm oxygen. Spin valve sensors of the invention have a spacer layer containing a non-magnetic electrically conductive material and oxygen. Spin valve sensors of the invention can be dual spin valves, bottom pinned spin valves or top pinned spin valves.

Abstract: The invention includes spin valve sensors. The spin valve sensors of the invention can be dual spin valves, bottom pinned spin valves, or top pinned spin valves. Spin valve sensor in accordance with the invention include a cap layer of tantalum nitride and a free layer. Cap layers of the invention include both monolayers and bilayers. Monolayer cap layers are tantalum nitride, and bilayer cap layers are a first layer of tantalum nitride with a layer of copper, ruthenium, gold, or silver thereon.