Abstract: Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

Abstract: The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.

Abstract: A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

Abstract: A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.

Abstract: The present disclosure proposes an anti-rotation lens and using it as an anti-rotation condenser lens in a multi-beam apparatus with a pre-beamlet-forming mechanism. The anti-rotation condenser lens keeps rotation angles of beamlets unchanged when changing currents thereof, and thereby enabling the pre-beamlet-forming mechanism to cut off electrons not in use as much as possible. In this way, the multi-beam apparatus can observe a sample with high resolution and high throughput, and is competent as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry.

Abstract: Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

Abstract: The present disclosure proposes an anti-rotation lens and using it as an anti-rotation condenser lens in a multi-beam apparatus with a pre-beamlet-forming mechanism. The anti-rotation condenser lens keeps rotation angles of beamlets unchanged when changing currents thereof, and thereby enabling the pre-beamlet-forming mechanism to cut off electrons not in use as much as possible. In this way, the multi-beam apparatus can observe a sample with high resolution and high throughput, and is competent as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

Abstract: Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.

Abstract: A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.

Abstract: An improved source conversion unit of a charged particle beam apparatus is disclosed. The source conversion unit comprises a first micro-structure array including a plurality of micro-structures. The plurality of micro-structures is grouped into one or more groups. Corresponding electrodes of micro-structures in one group are electrically connected and driven by a driver to influence a corresponding group of beamlets. The micro-structures in one group may be single-pole structures or multi-pole structures. The micro-structures in one group have same or substantially same radial shifts from an optical axis of the apparatus. The micro-structures in one group have same or substantially same orientation angles with respect to their radial shift directions.

Abstract: The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.

Abstract: The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.

Abstract: An improved source conversion unit of a charged particle beam apparatus is disclosed. The source conversion unit comprises a first micro-structure array including a plurality of micro-structures. The plurality of micro-structures is grouped into one or more groups. Corresponding electrodes of micro-structures in one group are electrically connected and driven by a driver to influence a corresponding group of beamlets. The micro-structures in one group may be single-pole structures or multi-pole structures. The micro-structures in one group have same or substantially same radial shifts from an optical axis of the apparatus. The micro-structures in one group have same or substantially same orientation angles with respect to their radial shift directions.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

Abstract: Systems and methods of mitigating Coulomb effect in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam along a primary optical axis, a first aperture array comprising a first plurality of apertures having shapes and configured to generate a plurality of primary beamlets derived from the primary charged-particle beam, a condenser lens comprising a plane adjustable along the primary optical axis, and a second aperture array comprising a second plurality of apertures configured to generate probing beamlets corresponding to the plurality of beamlets, wherein each of the plurality of probing beamlets comprises a portion of charged particles of a corresponding primary beamlet based on at least a position of the plane of the condenser lens and a characteristic of the second aperture array.

Abstract: Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system for projecting a plurality of secondary charged-particle beams from a sample onto a charged-particle detector. The electro-optical system may include a first pre-limit aperture plate comprising a first aperture configured to block peripheral charged-particles of the plurality of secondary charged-particle beams, and a beam-limit aperture array comprising a second aperture configured to trim the plurality of secondary charged-particle beams. The charged-particle detector may include a plurality of detection elements, wherein a detection element of the plurality of detection elements is associated with a corresponding trimmed beam of the plurality of secondary charged-particle beams.

Abstract: Systems and methods of reducing the Coulomb interaction effects in a charged particle beam apparatus are disclosed. The charged particle beam apparatus may comprise a charged particle source and a source conversion unit comprising an aperture-lens forming electrode plate configured to be at a first voltage, an aperture lens plate configured to be at a second voltage that is different from the first voltage for generating a first electric field, which enables the aperture-lens forming electrode plate and the aperture lens plate to form aperture lenses of an aperture lens array to respectively focus a plurality of beamlets of the charged particle beam, and an imaging lens configured to focus the plurality of beamlets on an image plane. The charged particle beam apparatus may comprise an objective lens configured to focus the plurality of beamlets onto a surface of the sample and form a plurality of probe spots thereon.