Abstract: The invention relates to a spliced optical fiber comprising a first and second polarization-maintaining optical fiber connected at ends by splicing; to fiber optic current sensors; and to a method for protecting the spliced optical fiber against mechanical stress and/or humidity. A protection tube is arranged around the spliced optical fiber in a splice section of the spliced optical fiber. A first and second end of the protection tube is sealed to the spliced optical fiber by first and second sealing arrangement for protecting the splice.

Abstract: Metal powder particles for use in additive manufacturing are made by removing material from the surface of the particles using wet chemical etching to create a nanoscale texturing of the surface, increasing absorptivity by the metal powder particles of incident laser light and maintaining flowability. The nanoscale texturing has sub-wavelength features at laser wavelengths in the range 800-1100 nm. The particles are substantially spherical and have mean diameters in the range 10-70 ?m.

Abstract: A method of forming a structure of 3D NAND memory device, including steps of forming a first stack layer on a substrate, forming a first channel hole extending through the first stack layer, forming a block layer on a surface of the first stack layer and the first channel hole, forming a sacrificial layer in the first channel hole, forming a second stack layer on the first stack layer and the sacrificial layer, performing a first etch process to form a second channel hole extending through the second stack layer and at least partially overlapping the first channel hole and to remove the sacrificial layer in the first channel hole, removing the block layer exposed from the second channel hole, and forming a function layer on a surface of the first channel hole and the second channel hole.

Abstract: A substrate includes a base, a pixel defining layer, a plurality of electrode pairs, and a plurality of light-emitting devices. The pixel defining layer is disposed on the base, and includes a plurality of through holes. At least one electrode pair includes a first electrode and a second electrode that are disposed at least on a hole wall of one of the through holes and at least partially opposite to each other, and the first electrode and the second electrode are insulated from each other. One of the plurality of light-emitting devices includes a liquid functional layer disposed in the through hole. The liquid functional layer is in direct contact with the first electrode and the second electrode. The liquid functional layer includes a liquid light-emitting layer configured to emit light.

Abstract: The present disclosure provides an organic thin film and a method for preparing the same, a display device, and an optical device, in which the method includes: providing a base substrate; forming an isomerization generating layer on the base substrate, the isomerization generating layer including a first region and a second region; adding a precursor solution on a surface of the isomerization generating layer away from the base substrate, and allowing surface energy of the second region to be greater than surface energy of the first region, so as to form the organic thin film from the precursor solution, the precursor solution being at least partially located in the second region.

Abstract: This application provides an integrated circuit, including a first MOS transistor. A first effective gate and a second effective gate are disposed in the first MOS transistor, and a first redundant gate is disposed between the first effective gate and the second effective gate. The first effective gate, the second effective gate, and the first redundant gate cover a plurality of fins arranged in parallel. The first effective gate and the second effective gate are connected to a gate terminal of the first MOS transistor. Fins on both sides of the first effective gate and fins on both sides of the second effective gate are respectively connected to a source terminal and a drain terminal of the first MOS transistor. The first redundant gate is connected to a redundant potential or suspended.

Abstract: A consolidated metallic glass structure is formed by fabricating [200] metallic glass nanoparticles with a solution-phase synthesis that provides coated metallic glass nanoparticles with a polymer ligand layer; stripping [202] the polymer ligand layer from the coated metallic glass nanoparticles to provide bare metallic glass nanoparticles; depositing [204] the bare metallic glass nanoparticles on a substrate to provide a deposited structure; and sintering [206] the deposited structure with heat and/or pressure to provide the consolidated metallic glass structure. The metallic glass nanoparticles are preferably composed substantially of nickel and boron, iron and boron, or cobalt and boron.

Abstract: Metal powder particles for use in additive manufacturing are made by removing material from the surface of the particles using wet chemical etching to create a nanoscale texturing of the surface, increasing absorptivity by the metal powder particles of incident laser light and maintaining flowability. The nanoscale texturing has sub-wavelength features at laser wavelengths in the range 800-1100 nm. The particles are substantially spherical and have mean diameters in the range 10-70 ?m.

Abstract: A method of forming a structure of 3D NAND memory device, including steps of forming a first stack layer on a substrate, forming a first channel hole extending through the first stack layer, forming a block layer on a surface of the first stack layer and the first channel hole, forming a sacrificial layer in the first channel hole, forming a second stack layer on the first stack layer and the sacrificial layer, performing a first etch process to form a second channel hole extending through the second stack layer and at least partially overlapping the first channel hole and to remove the sacrificial layer in the first channel hole, removing the block layer exposed from the second channel hole, and forming a function layer on a surface of the first channel hole and the second channel hole.

Abstract: In order to measure a voltage, an electro-optic element is placed in an electrical field generated by the voltage, and light is passed from a light source through a Faraday rotator and the electro-optic element onto a reflector and from there back through the electro-optic element and the Faraday rotator, thereby generating a voltage-dependent phase shift between two polarizations of the light. The interference contrast as well as a principal value of the total phase shift between said polarizations are measured and converted to a complex value having an absolute value equal to the contrast and a phase equal to the principal value. This complex value is offset and scaled using calibration values in order to calculate a compensated complex value. The voltage is derived from the compensated complex value.

Abstract: The present disclosure provides an organic thin film and a method for preparing the same, a display device, and an optical device, in which the method includes: providing a base substrate; forming an isomerization generating layer on the base substrate, the isomerization generating layer including a first region and a second region; adding a precursor solution on a surface of the isomerization generating layer away from the base substrate, and allowing surface energy of the second region to be greater than surface energy of the first region, so as to form the organic thin film from the precursor solution, the precursor solution being at least partially located in the second region.

Abstract: The optical interferometric sensor device comprises an integrated beam splitter having a first facet and a second facet with optical ports arranged therein. On the beam splitter, the beam splitting junctions as well as the optoelectronics-side ports and the sensing-side port are arranged with a mutual displacement along the direction of the first facet. This displacement reduces undesired interference effects caused by stray light. Also, a quarter-wave retarder is provided in a recess of the beam splitter with layers of soft adhesive adjacent to it in order to reduce stress.

Abstract: A substrate includes a base, a pixel defining layer, a plurality of electrode pairs, and a plurality of light-emitting devices. The pixel defining layer is disposed on the base, and includes a plurality of through holes. At least one electrode pair includes a first electrode and a second electrode that are disposed at least on a hole wall of one of the through holes and at least partially opposite to each other, and the first electrode and the second electrode are insulated from each other. One of the plurality of light-emitting devices includes a liquid functional layer disposed in the through hole. The liquid functional layer is in direct contact with the first electrode and the second electrode. The liquid functional layer includes a liquid light-emitting layer configured to emit light.

Abstract: The invention relates to a spliced optical fiber comprising a first and second polarization-maintaining optical fiber connected at ends by splicing; to fiber optic current sensors; and to a method for protecting the spliced optical fiber against mechanical stress and/or humidity. A protection tube is arranged around the spliced optical fiber in a splice section of the spliced optical fiber. A first and second end of the protection tube is sealed to the spliced optical fiber by first and second sealing arrangement for protecting the splice.

Abstract: A three-dimensional memory device includes a pair of alternating stacks of insulating layers and electrically conductive layers located over a semiconductor region, and laterally spaced from each other by a backside trench, memory stack structures extending through the pair of alternating, each memory stack structure containing a vertical semiconductor channel and a memory film, and a backside contact assembly located in the backside trench. The backside contact assembly includes an isolation dielectric spacer contacting the pair of alternating stacks, a conductive liner contacting inner sidewalls of the isolation dielectric spacer and a top surface of the semiconductor region, and composite non-metallic core containing at least one outer dielectric fill material portion that is laterally enclosed by a lower portion of the conductive liner and a dielectric core contacting an inner sidewall of the at least one outer dielectric fill material portion.

Abstract: A three-dimensional memory device includes a pair of alternating stacks of insulating layers and electrically conductive layers located over a semiconductor region, and laterally spaced from each other by a backside trench, memory stack structures extending through the pair of alternating, each memory stack structure containing a vertical semiconductor channel and a memory film, and a backside contact assembly located in the backside trench. The backside contact assembly includes an isolation dielectric spacer contacting the pair of alternating stacks, a conductive liner contacting inner sidewalls of the isolation dielectric spacer and a top surface of the semiconductor region, and composite non-metallic core containing at least one outer dielectric fill material portion that is laterally enclosed by a lower portion of the conductive liner and a dielectric core contacting an inner sidewall of the at least one outer dielectric fill material portion.

Abstract: An interferometric sensor and related methods are provided, with a sensing element whereby a measurand induces a relative phase shift between two waves, at least one detector measuring an interference signal between the two waves, and further including a phase shift detection unit having as input the interference signal and determining a first measure representative of the principal value of the relative phase shift, and a contrast detection unit having as input the interference signal for determining a second measure representative of the cross-correlation between the two waves, and a further a processing unit for converting the first and second measures to a measurand value.

Abstract: A structure of 3D NAND memory device and manufacturing method are provided. The structure of 3D NAND memory device includes a substrate, a first stack layer on the substrate, a second stack layer on the first stack layer, a block layer between the first stack layer and the second stack layer, and a channel structure extending through the first stack layer, the block layer and the second stack layer, wherein the channel structure comprises a function layer and a channel layer surrounding by the functional layer.

Abstract: A chemical etching apparatus and methods of using are disclosed. An apparatus used for chemical etching includes a bath designed to hold a first liquid. A liquid supply pipe runs along a bottom portion of the bath. The liquid supply pipe has a first plurality of openings along a length of the liquid supply pipe along the bottom portion of the bath. A gas supply pipe runs along the bottom portion of the bath. The gas supply pipe has a second plurality of openings along a length of the gas supply pipe along the bottom portion of the bath. The liquid supply pipe introduces a second liquid into the first liquid via the first plurality of openings and the gas supply pipe introduces a gas into the first liquid via the second plurality of openings.

Abstract: The invention relates to an assembly of a gas-tight compartment and an optical voltage sensor that further comprises a module. The module comprises an electro-optic crystal and electrodes, wherein the electro-optic crystal is the only element of the module to mechanically connect the two electrodes and to bridge the potentials of the two electrodes. The assembly is particuarly suited to measure direct current voltages.