Patents by Inventor Y. Mohammed Kasem
Y. Mohammed Kasem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9136060Abstract: A method of fabricating a capacitor in a semiconductor substrate. The semiconductor substrate is doped to have a low resistivity. A second electrode, insulated from a first electrode, is formed over a front side surface and connected by a metal-filled via to the back side surface. The via may be omitted and the second electrode may be in electrical contact with the substrate or may be formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor is provided by a pair of oppositely-directed diodes formed in the substrate connected in parallel with the capacitor. Capacitance is increased while maintaining a low effective series resistance. Electrodes include a plurality of fingers, which are interdigitated with the fingers of other electrode. The capacitor is fabricated in a wafer-scale process with other capacitors, where capacitors are separated from each other by a dicing technique.Type: GrantFiled: December 28, 2007Date of Patent: September 15, 2015Assignee: VISHAY-SILICONIXInventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 8324711Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: March 30, 2011Date of Patent: December 4, 2012Assignee: Vishay Intertechnology, Inc.Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 8004063Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: November 16, 2006Date of Patent: August 23, 2011Assignee: Vishay Intertechnology, Inc.Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Publication number: 20110176247Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: ApplicationFiled: March 30, 2011Publication date: July 21, 2011Applicant: VISHAY INTERTECHNOLOGY, INC.Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Publication number: 20100295152Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: ApplicationFiled: November 16, 2006Publication date: November 25, 2010Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Publication number: 20090278179Abstract: A semiconductor package has contacts on both sides of the dice on a wafer scale. The back side of the wafer is attached to a metal plate. The scribe lines separating the dice expose the metal plate without extending through the metal plate. A metal layer may be formed on the front side of the dice, covering the exposed portions of the metal plate and extending to side edges of the dice. The metal layer may cover connection pads on the front side of the dice. A second set of scribe lines are made coincident with the first set. Therefore, the metal layer remains on the side edges of the dice coupling the front and the back. As a result, the package is rugged and provides a low-resistance electrical connection between the back and front sides of the dice.Type: ApplicationFiled: July 20, 2009Publication date: November 12, 2009Applicant: VISHAY-SILICONIXInventors: Felix Zandman, Y. Mohammed Kasem, Yueh Se Ho
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Publication number: 20090256246Abstract: A semiconductor package includes a leadframe which is cup-shaped and holds a semiconductor die. The leadframe is in electrical contact with a terminal on one side of the die, and the leads of the leadframe are bent in such a way that portions of the leads are coplanar with the other side of the die, which also contains one or more terminals. A plastic capsule is formed around the leadframe and die.Type: ApplicationFiled: June 19, 2009Publication date: October 15, 2009Applicant: VISHAY-SILICONIXInventors: Mike Chang, King Owyang, Yueh-Se Ho, Y. Mohammed Kasem, Lixiong Luo, Wei-Bing Chu
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Patent number: 7595547Abstract: A semiconductor package includes a leadframe which is cup-shaped and holds a semiconductor die. The leadframe is in electrical contact with a terminal on one side of the die, and the leads of the leadframe are bent in such a way that portions of the leads are coplanar with the other side of the die, which also contains one or more terminals. A plastic capsule is formed around the leadframe and die.Type: GrantFiled: June 13, 2005Date of Patent: September 29, 2009Assignee: Vishay-SiliconixInventors: Mike Chang, King Owyang, Yueh-Se Ho, Y. Mohammed Kasem, Lixiong Luo, Wei-Bing Chu
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Patent number: 7589396Abstract: A semiconductor package with contacts on both sides of the dice on a wafer scale. The back side of the wafer is attached to a metal plate. The scribe lines separating the dice expose the metal plate without extending through the metal plate. A metal layer may be formed on the front side of the dice, covering the exposed portions of the metal plate and extending to side edges of the dice. The metal layer may cover connection pads on the front side of the dice. A second set of scribe lines are made coincident with the first set. Therefore, the metal layer remains on the side edges of the dice coupling the front and the back. As a result, the package is rugged and provides a low-resistance electrical connection between the back and front sides of the dice.Type: GrantFiled: April 10, 2007Date of Patent: September 15, 2009Assignee: Vishay-SiliconixInventors: Felix Zandman, Y. Mohammed Kasem, Yueh-Se Ho
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Publication number: 20070235774Abstract: A semiconductor package with contacts on both sides of the dice on a wafer scale. The back side of the wafer is attached to a metal plate. The scribe lines separating the dice expose the metal plate without extending through the metal plate. A metal layer may be formed on the front side of the dice, covering the exposed portions of the metal plate and extending to side edges of the dice. The metal layer may cover connection pads on the front side of the dice. A second set of scribe lines are made coincident with the first set. Therefore, the metal layer remains on the side edges of the dice coupling the front and the back. As a result, the package is rugged and provides a low-resistance electrical connection between the back and front sides of the dice.Type: ApplicationFiled: April 11, 2007Publication date: October 11, 2007Inventors: Felix Zandman, Y. Mohammed Kasem, Yueh-Se Ho
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Patent number: 7211877Abstract: A semiconductor package by which contacts are made to both sides of the dice is manufactured on a wafer scale. The back side of the wafer is attached to a metal plate. The scribe lines separating the dice are saw cut to expose the metal plate but the cuts do not extend through the metal plate. A metal layer, which may include a number of sublayers, is formed on the front side of the dice, the metal covering the exposed portions of the metal plate and extending the side edges of the dice. Separate sections of the metal layer may also cover connection pads on the front side of the dice. A second set of saw cuts are made coincident with the first set of saw cuts, using a blade that is narrower than the blade used to make the first set of saw cuts. As a result, the metal layer remains on the side edges of the dice connecting the back and front sides of the dice (via the metal plate).Type: GrantFiled: March 15, 2005Date of Patent: May 1, 2007Assignee: Vishay-SiliconixInventors: Felix Zandman, Y. Mohammed Kasem, Yueh-Se Ho
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Patent number: 7151036Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: June 5, 2003Date of Patent: December 19, 2006Assignee: Vishay-SiliconixInventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 6909170Abstract: A semiconductor package includes a leadframe which is cup-shaped and holds a semiconductor die. The leadframe is in electrical contact with a terminal on one side of the die, and the leads of the leadframe are bent in such a way that portions of the leads are coplanar with the other side of the die, which also contains one or more terminals. A plastic capsule is formed around the leadframe and die.Type: GrantFiled: November 7, 2002Date of Patent: June 21, 2005Assignee: Siliconix IncorporatedInventors: Mike Chang, King Owyang, Yueh-Se Ho, Y. Mohammed Kasem, Lixiong Luo, Wei-Bing Chu
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Patent number: 6876061Abstract: A semiconductor package by which contacts are made to both sides of the dice is manufactured on a wafer scale. The back side of the wafer is attached to a metal plate. The scribe lines separating the dice are saw cut to expose the metal plate but the cuts do not extend through the metal plate. A metal layer, which may include a number of sublayers, is formed on the front side of the dice, the metal covering the exposed portions of the metal plate and extending the side edges of the dice. Separate sections of the metal layer may also cover connection pads on the front side of the dice. A second set of saw cuts are made coincident with the first set of saw cuts, using a blade that is narrower than the blade used to make the first set of saw cuts. As a result, the metal layer remains on the side edges of the dice connecting the back and front sides of the dice (via the metal plate).Type: GrantFiled: May 28, 2002Date of Patent: April 5, 2005Assignee: Vishay Intertechnology, Inc.Inventors: Felix Zandman, Y. Mohammed Kasem, Yueh-Se Ho
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Patent number: 6744124Abstract: A semiconductor package includes a leadframe which is cup-shaped and holds a semiconductor die. The leadframe is in electrical contact with a terminal on one side of the die, and the leads of the leadframe are bent in such a way that portions of the leads are coplanar with the other side of the die, which also contains one or more terminals. A plastic capsule is formed around the leadframe and die.Type: GrantFiled: December 10, 1999Date of Patent: June 1, 2004Assignee: Siliconix IncorporatedInventors: Mike Chang, King Owyang, Yueh-Se Ho, Y. Mohammed Kasem, Lixiong Luo, Wei-Bing Chu
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Patent number: 6621143Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: July 29, 2002Date of Patent: September 16, 2003Assignee: Vishay Intertechnology, IncInventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 6621142Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: July 29, 2002Date of Patent: September 16, 2003Assignee: Vishay Intertechnology, Inc.Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 6562647Abstract: A semiconductor package by which contacts are made to both sides of the dice is manufactured on a wafer scale. The back side of the wafer is attached to a metal plate. The scribe lines separating the dice are saw cut to expose the metal plate but the cuts do not extend through the metal plate. A metal layer, which may include a number of sublayers, is formed on the front side of the dice, the metal covering the exposed portions of the metal plate and extending the side edges of the dice. Separate sections of the metal layer may also cover connection pads on the front side of the dice. A second set of saw cuts are made coincident with the first set of saw cuts, using a blade that is narrower than the blade used to make the first set of saw cuts. As a result, the metal layer remains on the side edges of the dice connecting the back and front sides of the dice (via the metal plate).Type: GrantFiled: April 26, 2001Date of Patent: May 13, 2003Assignee: Vishay Intertechnology, Inc.Inventors: Felix Zandman, Y. Mohammed Kasem, Yueh-Se Ho
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Publication number: 20030057532Abstract: A semiconductor package includes a leadframe which is cup-shaped and holds a semiconductor die. The leadframe is in electrical contact with a terminal on one side of the die, and the leads of the leadframe are bent in such a way that portions of the leads are coplanar with the other side of the die, which also contains one or more terminals. A plastic capsule is formed around the leadframe and die.Type: ApplicationFiled: November 7, 2002Publication date: March 27, 2003Inventors: Mike Chang, King Owyang, Yueh-Se Ho, Y. Mohammed Kasem, Lixiong Luo, Wei-Bing Chu
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Publication number: 20030057517Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: ApplicationFiled: July 29, 2002Publication date: March 27, 2003Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel