Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: Methods, systems, and computer program products are provided for creating a resource management testing environment. An initial population of databases is established in a database ring, having an in initial count of databases and different types of databases that are determined based on an initial database population model. The initial population model receives ring classification information for the database ring from a ring grouping model. A sequence of database population-change events is generated based on a model, to change the population of the databases over time in the ring. An orchestration framework performs testing of resource manager operations based on the model-defined initial population of databases and the model-defined populations of databases changed over time. Model-defined resource usage metrics for each database are utilized to test the resource manager operations. Resource usage metrics and database add/drop events of a production system are used to train the models.

Abstract: A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed on and corresponds to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a sealing layer, and at least a portion of the sealing layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the sealing layer define a chamber.

Abstract: An n-type metal oxide semiconductor transistor includes a gate structure, two source/drain regions, two amorphous portions and a silicide. The gate structure is disposed on a substrate. The two source/drain regions are disposed in the substrate and respectively located at two sides of the gate structure, wherein at least one of the source/drain regions is formed with a dislocation. The two amorphous portions are respectively disposed in the two source/drain regions. The silicide is disposed on the two source/drain regions, wherein at least one portion of the silicide overlaps the two amorphous portions.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: A graded early warning system for pest quantity counting includes: at least one image capturing device used to capture images of at least one pest trapping device in an environment to generate at least one pest trapping image; at least one environment monitoring and sensing device used to detect the environment to generate at least one environment parameter; at least one pest detecting and identifying device used to detect quantities and species of multiple pests based on the at least one pest trapping image; and a cloud server used to receive the at least one pest trapping image, the at least one environment parameter, and the quantities and species of multiple pests; wherein the cloud server immediately establishes pest probability models, generates early warning signals, and prompts suppression decisions according to the at least one environment parameter and the quantities and species of multiple pests.

Abstract: Methods, systems, and computer program products are provided for creating a resource management testing environment. An initial population of databases is established in a database ring, having an in initial count of databases and different types of databases that are determined based on an initial database population model. The initial population model receives ring classification information for the database ring from a ring grouping model. A sequence of database population-change events is generated based on a model, to change the population of the databases over time in the ring. An orchestration framework performs testing of resource manager operations based on the model-defined initial population of databases and the model-defined populations of databases changed over time. Model-defined resource usage metrics for each database are utilized to test the resource manager operations. Resource usage metrics and database add/drop events of a production system are used to train the models.

Abstract: A computing system automatically manages error reports. Each error report specifies an error that occurred within a subsystem of the computing system. A received error report is added into a root cause grouping. Each root cause grouping contains error reports having error types traceable to a same root cause. A deployment time at which the subsystem corresponding to the error report was deployed within the computing system is determined. A severity score for the root cause grouping is generated as a function of the deployment time. The severity score inversely correlates to a time period length between the deployment time and the occurrence time of the error. The root cause grouping is assigned to a ranked error container of a plurality of ranked error containers based on the generated severity score. Each ranked error container contains root cause groupings having severity scores within a specified score range.

Abstract: A semiconductor device includes a first layer that includes a first semiconductor material disposed on a semiconductor substrate, and a second layer of a second semiconductor material disposed on the first layer. The semiconductor substrate includes Si. The first semiconductor material and the second semiconductor material are different. The second semiconductor material is formed of an alloy including a first element and Sn. A surface region of an end portion of the second layer at both ends of the second layer has a higher concentration of Sn than an internal region of the end portion of the second layer. The surface region surrounds the internal region.

Abstract: A lotion composition is provided. The lotion composition includes a) about 1% to about 90%, by weight, of a rheology structurant; and a b) carrier.

Abstract: The present invention relates to a silicon dioxide composite particle with far-infrared radioactivity, which is formed by the hydrolysis, condensation and polymerization of an organic silane precursor having the structure of the formula (I) with a tetra-alkoxysilane. The high stability of organic silane precursor compounds and the low biotoxicity of silicon dioxide composite particles make the present far-infrared radioactive silicon dioxide composite particles of great potential for extensive use in related bio-products.

Abstract: A semiconductor device includes a first layer that includes a first semiconductor material disposed on a semiconductor substrate, and a second layer of a second semiconductor material disposed on the first layer. The semiconductor substrate includes Si. The first semiconductor material and the second semiconductor material are different. The second semiconductor material is formed of an alloy including a first element and Sn. A surface region of an end portion of the second layer at both ends of the second layer has a higher concentration of Sn than an internal region of the end portion of the second layer. The surface region surrounds the internal region.

Abstract: A cooling apparatus is provided. An external cooling fluid flows into an external inlet opening from an external inlet pipe and passes through a heat exchanger to flow out of an external outlet opening to an external outlet pipe. An internal cooling fluid flows into an internal inlet pipe from the server and flows into an internal inlet opening from the internal inlet pipe and passes through the heat exchanger for heat exchange with the external cooling fluid to flow out of an internal outlet opening to an internal outlet pipe. A hot-swap pump has a pump main body, an inlet anti-leakage pipe, an outlet anti-leakage pipe and a hot-swap connector. The inlet anti-leakage pipe includes an inlet connector and an inlet anti-leakage valve. The outlet anti-leakage pipe includes an outlet connector and an outlet anti-leakage valve. The hot-swap connector is electrically connected to the pump main body.

Abstract: Methods, systems, and computer program products are provided for creating a resource management testing environment. An initial population of databases is established in a database ring, having an in initial count of databases and different types of databases that are determined based on an initial database population model. The initial population model receives ring classification information for the database ring from a ring grouping model. A sequence of database population-change events is generated based on a model, to change the population of the databases over time in the ring. An orchestration framework performs testing of resource manager operations based on the model-defined initial population of databases and the model-defined populations of databases changed over time. Model-defined resource usage metrics for each database are utilized to test the resource manager operations. Resource usage metrics and database add/drop events of a production system are used to train the models.

Abstract: A dye for a material with amide functional groups and a dyeing method of using the same are provided. The dye includes a compound represented by Formula (I) and a solvent. Based on the total weight of the dye of 100 wt %, a content of the compound represented by Formula (I) is 40 wt % to 95 wt %. In Chemical Formula (I), R1, R2 and R3 are each independently H, —OH or —COOH, wherein at least one of R1, R2 and R3 is —OH or —COOH.

Abstract: The present disclosure describes a semiconductor device includes a substrate, a buffer layer on the substrate, and a stacked fin structure on the buffer layer. The buffer layer can include germanium, and the stacked fin structure can include a semiconductor layer with germanium and tin. The semiconductor device further includes a gate structure wrapped around a portion of the semiconductor layer and an epitaxial structure on the buffer layer and in contact with the semiconductor layer. The epitaxial structure includes germanium and tin.

Abstract: A device comprises a gate structure, n-type source/drain features, p-type source/drain features, an NFET channel, and a PFET channel. The gate structure is over a substrate. The n-type source/drain features are on opposite first and second sides of the gate structure, respectively. The p-type source/drain features are on opposite third and fourth sides of the gate structure, respectively. The NFET channel extends within the gate structure and connects the n-type source/drain features. The PFET channel extends within the gate structure and connects the p-type source/drain features. The NFET channel and the PFET channel are vertically spaced apart by the gate structure.

Abstract: A verification method and a verification system for an information and communication safety protection mechanism are provided. The verification methods includes: selecting a target malicious program, and collecting at least one behavioral trace of the target malicious program; providing a target machine and deploying a protection mechanism to be tested for the target machine; configuring the target machine to reproduce the at least one behavioral trace; and determining whether the protection mechanism to be tested detects an abnormal event, so as to verify an effectiveness of the protection mechanism to be tested.

Abstract: The present disclosure describes a semiconductor device includes a substrate, a buffer layer on the substrate, and a stacked fin structure on the buffer layer. The buffer layer can include germanium, and the stacked fin structure can include a semiconductor layer with germanium and tin. The semiconductor device further includes a gate structure wrapped around a portion of the semiconductor layer and an epitaxial structure on the buffer layer and in contact with the semiconductor layer. The epitaxial structure includes germanium and tin.