Abstract: Methods, systems, and computer program products are provided for creating a resource management testing environment. An initial population of databases is established in a database ring, having an in initial count of databases and different types of databases that are determined based on an initial database population model. The initial population model receives ring classification information for the database ring from a ring grouping model. A sequence of database population-change events is generated based on a model, to change the population of the databases over time in the ring. An orchestration framework performs testing of resource manager operations based on the model-defined initial population of databases and the model-defined populations of databases changed over time. Model-defined resource usage metrics for each database are utilized to test the resource manager operations. Resource usage metrics and database add/drop events of a production system are used to train the models.

Abstract: A computing system automatically manages error reports. Each error report specifies an error that occurred within a subsystem of the computing system. A received error report is added into a root cause grouping. Each root cause grouping contains error reports having error types traceable to a same root cause. A deployment time at which the subsystem corresponding to the error report was deployed within the computing system is determined. A severity score for the root cause grouping is generated as a function of the deployment time. The severity score inversely correlates to a time period length between the deployment time and the occurrence time of the error. The root cause grouping is assigned to a ranked error container of a plurality of ranked error containers based on the generated severity score. Each ranked error container contains root cause groupings having severity scores within a specified score range.

Abstract: A semiconductor device includes a first layer that includes a first semiconductor material disposed on a semiconductor substrate, and a second layer of a second semiconductor material disposed on the first layer. The semiconductor substrate includes Si. The first semiconductor material and the second semiconductor material are different. The second semiconductor material is formed of an alloy including a first element and Sn. A surface region of an end portion of the second layer at both ends of the second layer has a higher concentration of Sn than an internal region of the end portion of the second layer. The surface region surrounds the internal region.

Abstract: A lotion composition is provided. The lotion composition includes a) about 1% to about 90%, by weight, of a rheology structurant; and a b) carrier.

Abstract: The present invention relates to a silicon dioxide composite particle with far-infrared radioactivity, which is formed by the hydrolysis, condensation and polymerization of an organic silane precursor having the structure of the formula (I) with a tetra-alkoxysilane. The high stability of organic silane precursor compounds and the low biotoxicity of silicon dioxide composite particles make the present far-infrared radioactive silicon dioxide composite particles of great potential for extensive use in related bio-products.

Abstract: A semiconductor device includes a first layer that includes a first semiconductor material disposed on a semiconductor substrate, and a second layer of a second semiconductor material disposed on the first layer. The semiconductor substrate includes Si. The first semiconductor material and the second semiconductor material are different. The second semiconductor material is formed of an alloy including a first element and Sn. A surface region of an end portion of the second layer at both ends of the second layer has a higher concentration of Sn than an internal region of the end portion of the second layer. The surface region surrounds the internal region.

Abstract: A cooling apparatus is provided. An external cooling fluid flows into an external inlet opening from an external inlet pipe and passes through a heat exchanger to flow out of an external outlet opening to an external outlet pipe. An internal cooling fluid flows into an internal inlet pipe from the server and flows into an internal inlet opening from the internal inlet pipe and passes through the heat exchanger for heat exchange with the external cooling fluid to flow out of an internal outlet opening to an internal outlet pipe. A hot-swap pump has a pump main body, an inlet anti-leakage pipe, an outlet anti-leakage pipe and a hot-swap connector. The inlet anti-leakage pipe includes an inlet connector and an inlet anti-leakage valve. The outlet anti-leakage pipe includes an outlet connector and an outlet anti-leakage valve. The hot-swap connector is electrically connected to the pump main body.

Abstract: Methods, systems, and computer program products are provided for creating a resource management testing environment. An initial population of databases is established in a database ring, having an in initial count of databases and different types of databases that are determined based on an initial database population model. The initial population model receives ring classification information for the database ring from a ring grouping model. A sequence of database population-change events is generated based on a model, to change the population of the databases over time in the ring. An orchestration framework performs testing of resource manager operations based on the model-defined initial population of databases and the model-defined populations of databases changed over time. Model-defined resource usage metrics for each database are utilized to test the resource manager operations. Resource usage metrics and database add/drop events of a production system are used to train the models.

Abstract: The present disclosure describes a semiconductor device includes a substrate, a buffer layer on the substrate, and a stacked fin structure on the buffer layer. The buffer layer can include germanium, and the stacked fin structure can include a semiconductor layer with germanium and tin. The semiconductor device further includes a gate structure wrapped around a portion of the semiconductor layer and an epitaxial structure on the buffer layer and in contact with the semiconductor layer. The epitaxial structure includes germanium and tin.

Abstract: A dye for a material with amide functional groups and a dyeing method of using the same are provided. The dye includes a compound represented by Formula (I) and a solvent. Based on the total weight of the dye of 100 wt %, a content of the compound represented by Formula (I) is 40 wt % to 95 wt %. In Chemical Formula (I), R1, R2 and R3 are each independently H, —OH or —COOH, wherein at least one of R1, R2 and R3 is —OH or —COOH.

Abstract: A device comprises a gate structure, n-type source/drain features, p-type source/drain features, an NFET channel, and a PFET channel. The gate structure is over a substrate. The n-type source/drain features are on opposite first and second sides of the gate structure, respectively. The p-type source/drain features are on opposite third and fourth sides of the gate structure, respectively. The NFET channel extends within the gate structure and connects the n-type source/drain features. The PFET channel extends within the gate structure and connects the p-type source/drain features. The NFET channel and the PFET channel are vertically spaced apart by the gate structure.

Abstract: A verification method and a verification system for an information and communication safety protection mechanism are provided. The verification methods includes: selecting a target malicious program, and collecting at least one behavioral trace of the target malicious program; providing a target machine and deploying a protection mechanism to be tested for the target machine; configuring the target machine to reproduce the at least one behavioral trace; and determining whether the protection mechanism to be tested detects an abnormal event, so as to verify an effectiveness of the protection mechanism to be tested.

Abstract: The present disclosure describes a semiconductor device includes a substrate, a buffer layer on the substrate, and a stacked fin structure on the buffer layer. The buffer layer can include germanium, and the stacked fin structure can include a semiconductor layer with germanium and tin. The semiconductor device further includes a gate structure wrapped around a portion of the semiconductor layer and an epitaxial structure on the buffer layer and in contact with the semiconductor layer. The epitaxial structure includes germanium and tin.

Abstract: Methods, systems, apparatuses, and computer-readable storage mediums described herein are directed to determining and recommending an optimal compute resource configuration for a cloud-based resource (e.g., a server, a virtual machine, etc.) for migrating a customer to the cloud. The embodiments described herein utilize a statistically robust approach that makes recommendations that are more flexible (elastic) and account for the full distribution of the amount of resource usage. Such an approach is utilized to develop a personalized rank of relevant recommendations to a customer. To determine which compute resource configuration to recommend to the customer, the customer’s usage profile is matched to a set of customers that have already migrated to the cloud. The compute resource configuration that reaches the performance most similar to the performance of the configurations utilized by customers in the matched set is recommended to the user.

Abstract: The present disclosure describes a semiconductor device includes a substrate, a buffer layer on the substrate, and a stacked fin structure on the buffer layer. The buffer layer can include germanium, and the stacked fin structure can include a semiconductor layer with germanium and tin. The semiconductor device further includes a gate structure wrapped around a portion of the semiconductor layer and an epitaxial structure on the buffer layer and in contact with the semiconductor layer. The epitaxial structure includes germanium and tin.

Abstract: Embodiments of the present disclosure disclose a data indicating method and related products, including: receiving, by a terminal, a downlink control signaling from a network side device, where the downlink control signaling includes a first information domain and a second information domain, the first information domain is configured to indicate whether a transport block scheduled by the downlink control signaling is a new transport block, and the second information domain is configured to indicate a coding block group scheduled by the downlink control signaling; determining, by the terminal, a number of coding block groups included in the new transport block according to the first information domain and the second information domain. The embodiments of the disclosure is beneficial to determine a number of bits of an uplink control signaling that is fed back and reduce an uplink control signaling overhead.

Abstract: A dyeing method includes immersing a fiber into a dye for dyeing the fiber, in which the dye includes indigo and indirubin, and the indigo and the indirubin have a weight ratio of 20:1 to 80:1. The indigo in the dye has a concentration of 0.1% o.w.f. to 5% o.w.f. The dyed fiber may simultaneously have high luminance, high color saturation, high strength of colorization, and sufficient colorfastness.

Abstract: A process for preparing a triazine-based precursor for producing a micro-particulate complex containing a far infrared-emissive silica particle comprises steps of: a) subjecting 2-4-6-trichloro-1,3,5-triazine and a first nucleophilic compound to a displacement reaction in the presence of a first solvent at a first temperature range to form an intermediate; and b) subjecting the intermediate and a second nucleophilic compound to a further displacement reaction in the presence of a second solvent at a second temperature range higher than the first temperature range.

Abstract: A memory management method. The memory management method includes: receiving a command from a host system; sending a command sequence corresponding to the command to a rewritable non-volatile memory module; determining a delay time; and sending a plurality of polling commands to the rewritable non-volatile memory module after the delay time.

Abstract: An easy-disconnect seal matching reservoir for connecting the microfluidic chip and the pipette. The reservoir comprises at least one first coupling unit and at least one second coupling unit. The first coupling unit includes a first end and a second end opposed to the first end, and the first end is disposed on an inlet of the microfluidic chip. The second coupling unit includes a third end and a fourth end opposed to the third end, and a pipe connected between the third end and the fourth end. The third end is coupled to the second end of the first coupling unit. The pipette can be put in the pipe via the fourth end.