Abstract: The invention is directed to a method of protecting a glass surface during transportation and/or process using an aqueous solution of an acrylic material to protectively coat the surface of the glass sheet. The acrylic protective coating may be applied by dipping, roller applying or spraying the coating on the glass. The coating is then cured, dried or baked in an oven. Subsequently, the glass sheet may be scored and separated into individual glass article blanks for further processing; for example, edge grinding to produce smooth edges and drilling/milling to produce openings such as holes in the surface of the glass. When processing of the glass article is completed, the protective coating can be removed or the article can be shipped to the end used who can remove the coating using an aqueous solution of pH?12 to remove the coating.

Abstract: Low dielectric constant dielectric films having a high degree of porosity suffer from poor mechanical strength and can be damaged during processing steps. Damage can be substantially eliminated or minimized by stuffing the pores of the dielectric film with a material that substantially fills the pores. The stuffing material should have low surface tension and viscosity to provide good wetting. Alternatively, the stuffing material can be dissolved in a wetting carrier fluid, such as supercritical carbon dioxide and the like.

Abstract: A method for jetting color ink includes determining an initial voltage value of a nozzle, wherein the initial voltage value corresponds to a predetermined jetting volume of the nozzle; determining a maximum adjusting voltage value of the nozzle, wherein the maximum adjusting voltage value may correspond to an allowable error value of the predetermined jetting volume; combining the initial voltage value with an adjusting voltage value to obtain a jetting voltage, wherein the adjusting voltage value may be randomly selected between zero to the maximum adjusting voltage value; and jetting the color ink from the nozzle according to the jetting voltage onto a sub-pixel in a pixel.

Abstract: The present invention discloses a semiconductor source/drain contact structure, which comprises a substrate, a source/drain region disposed in the substrate, at least one non-silicided conductive layer including a barrier layer disposed over and in contact with the source/drain region, and one or more contact hole filling metals disposed over and in contact with the at least one non-silicided conductive layer, wherein a first contact area between the at least one non-silicided conductive layer and the source/drain region is substantially larger than a second contact area between the one or more contact hole filling metals and the at least one non-silicided conductive layer.

Abstract: A manufacturing method of a filter is provided. The manufacturing method includes steps as follows. First, a substrate is provided and a black matrix is formed on the substrate. The black matrix has a number of openings arranged in array. Next, a filter material is individually formed in the openings by inkjet printing or other methods, and the filter material includes a solvent and a dye mixed with the solvent. Thereafter, a thermal treatment is performed and an evaporation rate of the solvent during the thermal treatment is reduced, so as to cure the filter material. As the evaporation rate of the solvent is relatively slow, the filter material is still flowable during the thermal treatment. Hence, the cured filter material has a flat surface. The filter fabricated by the above manufacturing method has an even hue and a well flattened surface.

Abstract: A manufacturing method of a color filter including following steps is provided. First, a partition is formed on a substrate to form a plurality of pixel regions on the substrate. Next, a color pigment is provided along a continuous pigment-providing route, so as to form the color pigment on a sequence of pixel regions among the plurality of pixel regions and the partition. The method mentioned above can prevent the unfilled phenomenon of the pigment around the corners of the pixel region. Besides, a liquid crystal display panel having the color filter is also provided.

Abstract: The present invention discloses a semiconductor source/drain contact structure, which comprises a substrate, a source/drain region disposed in the substrate, at least one non-silicided conductive layer including a barrier layer disposed over and in contact with the source/ drain region, and one or more contact hole filling metals disposed over and in contact with the at least one non-silicided conductive layer, wherein a first contact area between the at least one non-silicided conductive layer and the source/drain region is substantially larger than a second contact area between the one or more contact hole filling metals and the at least one non-silicided conductive layer.

Abstract: A semiconductor structure includes a semiconductor substrate; a gate dielectric over the semiconductor substrate; a gate electrode over the gate dielectric; a source/drain region adjacent the gate dielectric; a silicide region on the source/drain region; a metal layer on top of, and physical contacting, the silicide region; an inter-layer dielectric (ILD) over the metal layer; and a contact opening in the ILD. The metal layer is exposed through the contact opening. The metal layer further extends under the ILD. The semiconductor structure further includes a contact in the contact opening.

Abstract: System and method of intelligent surveillance and analysis mainly used for monitoring whether a field has an intrusion object (such as a thief), and instantly providing video or image of the suspected intruder to approved relevant individual (such as the house owner) for further confirmation of the presence of the intrusion object (such as thief); therefore, the wrongful determination by the computer is avoided. The aforementioned system includes, first the determination and extraction of the contour of the suspected intrusion object, then the continuous tracking of the suspected intrusion object according to the contour, continue capturing of images using the camera, and then storing these captured video temporarily, and finally notifying the house owner using the highest definition image of the video which occupies a lesser amount of bandwidth through various communication channels once the presence of thief is determined; the video is downloaded using higher bandwidth, and is played.

Abstract: A color filter including a substrate, a bank and a plurality of color filter films is provided. The bank is disposed on the substrate and has many openings. The bank has both a bottom surface contacting the substrate and a top surface exceeding the bottom surface. An outline of the bottom surface does not exceed that of the top surface. Besides, the color filter films are disposed on the substrate exposed by the openings, respectively, and each of the color filter films has a curved top surface. In the above-mentioned color filter, wetability between the bank and the color filter films is favorable.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate, forming a dielectric layer over the semiconductor substrate, treating the dielectric layer with a carbon containing group, forming a conductive layer over the treated dielectric layer, and patterning and etching the dielectric layer and conductive layer to form a gate structure. The carbon containing group includes an OCH3 or CN species.

Abstract: A method of manufacturing a color filter is provided. First, a substrate is provided and then a partition, for example a black matrix, is formed on the substrate. The black matrix defines a plurality of first color filter areas and a plurality of second color filter areas corresponding to the first color filter areas on the substrate. Thereafter, a first color filter film and a second color filter film are formed in each of the first color filter areas and each of the second color filter areas corresponding thereto, respectively, such that a color filter is provided. The thickness of the first color filter film differs from the thickness of the second color filter film. Thus, images displayed by a transflective liquid crystal display with the aforementioned color filter have even colors.

Abstract: A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of the low-K dielectric insulating layer including supercritical CO2 and a solvent including a silicon bond forming substituent having a bonding energy greater than a Si—H to replace at least a portion of the Si—H bonds with the silicon bond forming substituent.

Abstract: A method and apparatus involve providing a substrate having a dielectric layer formed thereon, forming a photoresist mask over the dielectric layer, the photoresist mask defining an opening, etching the dielectric layer through the at least one opening in the photoresist mask, treating a portion of the photoresist mask with an etching species, and removing the treated photoresist mask with a supercritical fluid. The etching, treating, and removing can be performed in one chamber.

Abstract: An organic layer, such as a porous low-K dielectric in an IC, contains pores open at its surface. To close the pores, the organic layer is contacted by a supercritical fluid that is a solvent for the layer. After a small amount of the surface and the wall of the open pores is solvated, a phase transition of the solvated organic material is effected at the surface to cover it with a dense, smooth, non-porous film that seals the open pores.

Abstract: A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.

Abstract: A semiconductor structure having a pore sealed portion of a dielectric layer is provided. Exposed pores of the dielectric material are sealed using an anisotropic plasma so that pores along the bottom of the opening are sealed, and pores along sidewalls of the opening remain relatively untreated by the plasma. Thereafter, one or more barrier layers may be formed and the opening may be filled with a conductive material. The barrier layers formed over the sealing layer exhibits a more continuous barrier layer. The pores may be partially or completely sealed by plasma bombardment or ion implantation using a gas selected from one of O2, an O2/N2 mixture, H2O, or combinations thereof.

Abstract: A method of forming a low-k dielectric layer and forming a structure in the low-k dielectric layer includes depositing a low-k dielectric layer over a substrate, performing a first treatment to the low-k dielectric layer, performing post-formation processes, and performing a second treatment to the low-k dielectric layer. The k value of the low-k dielectric layer is lowered by the first treatment. The post-formation processes performed to the low-k dielectric layer include at least one low-k dielectric material damaging process. The second treatment restores the low-k dielectric layer. Preferably, each of the first and second treatments includes a curing process selected from e-beam curing, ultraviolet curing, plasma curing, SCCO2 cleaning, and combinations thereof.

Abstract: A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.

Abstract: The present invention provides a self-sealing high-temperature biochemical reaction apparatus and a method for the same. The present apparatus has a microfluidic channel including a main channel chamber, an inlet sub-channel and an outlet sub-channel. The main channel chamber has an inlet and an outlet respectively communicated with the inlet sub-channel and outlet sub-channel. The inner diameters of the inlet sub-channel and outlet sub-channel are smaller than that of the main channel chamber. The present invention controls the temperature gradient of the main channel chamber and sub-channels during the biochemical reaction such that the microfluid itself becomes self-sealing material to seal the openings of the sub-channels during the high-temperature reaction. The microfluid would not be vaporized to adversely influence the reaction result.