Abstract: A semiconductor device includes a pixel array comprising a first pixel and a second pixel. The semiconductor device includes a metal structure overlying a portion of a substrate between the first pixel and the second pixel. The semiconductor device includes a first barrier layer adjacent a sidewall of the metal structure. The semiconductor device includes a passivation layer adjacent a sidewall of the first barrier layer. The first barrier layer is between the passivation layer and the metal structure.

Abstract: A method of identifying a whiteboard based on image tokens includes setting a plurality of image tokens on the whiteboard, obtaining an image including the whiteboard from a camera, employing hardware or software techniques to detect image shaking in order to prevent a display of non-relevant content or privacy-sensitive information, detecting image tokens of the whiteboard by using a machine learning model, applying token tracking to the image tokens to enhance stability and robustness of token detection, calculating coordinates of the image tokens, determining an optimal mapping matrix based on the coordinates of the image tokens, mapping the image based on the optimal mapping matrix to generate a mapped image of the whiteboard, and displaying the mapped image on a screen.

Abstract: A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.

Abstract: An electronic device includes a flexible substrate and a conductive wire structure. The conductive wire structure is disposed on the flexible substrate and includes a first segment, a second segment, a third segment, a fourth segment, a first joint portion, a second joint portion, a third joint portion and a fourth joint portion. A first opening is surrounded by the first segment, the second segment, the first joint portion and the second joint portion. A second opening is surrounded by the third segment, the fourth segment, the third joint portion and the fourth joint portion. Along a first direction, a ratio of a first width sum of widths of the first segment, the second segment, the third segment and the fourth segment to a second width sum of widths of the first joint portion and the third joint portion is in a range from 0.8 to 1.2.

Abstract: A blood characteristic measurer includes multiple light sources, a light sensor and a processor. The multiple light sources emit multiple beams of light of different dominant lightening wavelength. The light sensor receives multiple reflected light beams due to the reflection of incident light from a skin surface. The processor is electrically coupled to the light sensor and produces the blood characteristic according to reconstructed spectra generated by the multiple reflected light beams and absorption coefficient spectra generated by the skin surface.

Abstract: A time-synchronization apparatus and/or method involves identifying a frequency offset by implementing a frequency-offset-acquisition process which includes counting cycles of a local clock signal within a period of a reference pulse train. A phase offset of the local clock signal is determined, a residual frequency error is generated based on the phase offset, and at least one timer-adjustment signal that is based on the frequency offset and the residual frequency error is provided.

Abstract: An optical sensing apparatus, a method for manufacturing an optical sensing apparatus, and an electronic device can improve the optical detection accuracy and user experience. The optical sensing apparatus includes: a sensor chip configured to receive an incident light signal for optical detection; and a transparent conductive layer provided above the sensor chip and connected to a grounding terminal of the sensor chip, where the transparent conductive layer is configured to be coupled with an electromagnetic wave in an environment, and transmit the electromagnetic wave to the grounding terminal of the sensor chip.

Abstract: A calibration system and a calibration method for state of charge (SOC) and state of health (SOH) in an energy storage system are provided. The calibration system includes a Main Battery Management System (MBMS) and a plurality of racks, wherein, when the MBMS determines that one of the plurality of racks meets auto-calibration conditions, the MBMS utilizes a battery feature value extraction algorithm to obtain feature value data of each of battery packs, and predicts the number of battery cycles for each of the battery packs via a battery aging correction model. In this way, the SOC and the SOH for each of the battery packs can be accurately calculated, so that maintenance personnel can clearly comprehend the status of each of the racks, thereby improving the efficiency of power management.

Abstract: A button structure includes a switch, a shell, an elastic member, a button and at least one adjustable limiting member. The elastic member includes a fixing portion, a compressive portion and an elastic portion. The fixing portion is connected to the shell. The compressive portion is configured to abut against the switch. The elastic portion is connected between the fixing portion and the compressive portion. The elastic portion is suitable for deformation. The button is connected to the compressive portion, and the compressive portion is located between the button and the switch. The adjustable limiting member is disposed on the button, and is configured to abut against the elastic portion. The adjustable limiting member adjustably protrudes for a length toward the elastic portion relative to the button.

Abstract: An interaction control method for detecting a default object in a real-time image and an electronic device are introduced. The method includes steps of image recognition, interaction area setting, movement detection, and playing execution, wherein a default object, a reference object and a setting object are recognized by artificial intelligence in the real-time image, and the electronic device triggers a preset instruction corresponding to the interaction content corresponding to an interaction area by artificial intelligence to recognize a preset instruction corresponding to the interaction content of an interaction area, and the electronic device executes the preset instruction to play a sound response. A terminal device in communication connection with an electronic device and a non-transitory computer-readable recording medium are further provided.

Abstract: A memory cell structure includes a transistor structure and a capacitor structure, where the capacitor structure includes a hydrogen absorption layer. The hydrogen absorption layer absorbs hydrogen, which prevents or reduces the likelihood of the hydrogen diffusing into an underlying metal-oxide channel of the transistor structure. In this way, the hydrogen absorption layer minimizes and/or reduces the likelihood of hydrogen contamination in the metal-oxide channel, which may enable a low current leakage to be achieved for the memory cell structure and reduces the likelihood of data corruption and/or failure of the memory cell structure, among other examples.

Abstract: An electrode assembly, a battery cell, a battery, and an electrical apparatus are disclosed. The electrode assembly includes a first electrode plate, the electrode plate includes a current collector and active material layers arranged on the current collector, the active material layer is provided with a plurality of material removal regions at intervals in an extension direction (L) of the first electrode plate, and the material removal region extends in a width direction (Y) of the first electrode plate; the active material layer is provided with a marking portion, a width of the marking portion in the extension direction (L) of the first electrode plate is greater than or equal to a width of the material removal region, and the marking portion spans across the material removal region.

Abstract: Some embodiments of this application provide an electrode assembly, a battery cell, a battery, and an electrical device. The electrode assembly includes at least one first electrode plate, where the first electrode plate is bent and includes: a current collector; and an active material layer, disposed on the current collector. The active material layer includes a material-removed region in at least a part of bends of the first electrode plate. The material-removed region extends along a width direction of the first electrode plate. A depth of the material-removed region does not exceed a thickness of the active material layer at which the material-removed region is located.

Abstract: Provided is an identification method of plastic microparticles, including: performing an infrared analysis on plastic microparticles to identify whether the plastic microparticles include polyethylene terephthalate, polyethylene, polypropylene, or nylon 66, wherein the identification is to determine whether the plastic microparticles have a characteristic peak of each plastic, and the characteristic peak is selected from signals that do not overlap and interfere with each other in the infrared spectrum signals of each plastic.

Abstract: A semiconductor structure according to the present disclosure includes a substrate, a first base fin and a second base fin arising from the substrate, an isolation structure disposed between the first base fin and the second base fin, first channel members disposed over the first base fin, second channel members disposed over the second base fin, a region isolation feature extending into the substrate, a first gate structure wrapping around each of the first channel members, second gate structure wrapping around each of the second channel members, a first gate cut feature extending through the first gate structure and into the isolation feature, and a second gate cut feature extending though the second gate structure and into the isolation feature. Each of the first gate cut feature and the second gate cut feature are spaced apart from the region isolation feature.

Abstract: A carbon black with good dispersibility is provided. The carbon black has a full width at half maximum (FWHM) of greater than 0 and less than or equal to 0.3 ?m as measured by a centrifugal sedimentation method, wherein the centrifugal sedimentation method uses anhydrous ethanol as a solvent.

Abstract: Provided are a marking device and a lamination manufacturing system. The marking device includes an attachment mechanism, a coating mechanism, and a stripping mechanism, wherein the attachment mechanism is configured to attach shielding members to a marking area of a base material; the coating mechanism is arranged downstream of the attachment mechanism along a conveying direction of the base material, and the coating mechanism is configured to coat the base material; and the stripping mechanism is arranged downstream of the coating mechanism along the conveying direction, and the stripping mechanism is configured to detach the shielding members from the base material to form scores on the marking area.

Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.

Abstract: Methods for improving wafer bonding performance are disclosed herein. In some embodiments, a method for bonding a pair of semiconductor substrates is disclosed. The method includes: processing at least one of the pair of semiconductor substrates, and bonding the pair of semiconductor substrates together. Each of the pair of semiconductor substrates is processed by: performing at least one chemical vapor deposition (CVD), and performing at least one chemical mechanical polishing (CMP). One of the at least one CVD is performed after all CMP performed before bonding.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.