Abstract: An inverter-based comparator, powered between a first supply voltage and a second supply voltage being lower than the first supply voltage, includes a first inverter branch composed of at least one first P-type transistor and at least one first N-type transistor; and a second inverter branch composed of at least one second P-type transistor, at least one second N-type transistor and at least two tuning switches. The first inverter branch and the second inverter branch are configured to compare an input voltage with an internal trigger point, thereby generating a compare voltage at an interconnected node. One of the at least two tuning switches is controlled to isolate the first supply voltage and another is controlled to isolate the second supply voltage to compensate for trigger point shifting.

Abstract: A system includes a high bandwidth memory (HBM) arranged into portions including memory cells, the HBM further including a differentiated dynamic voltage and frequency scaling (DDVFS) device to perform the following: for a first set of one or more of the memory cells in a first one of the portions, the first set including a first one of the memory cells, controlling a temperature of the first set based on one or more first environmental signals corresponding to at least a first transistor in the first memory cell; and for a second set of one or more of the memory cells in a second one of the portions, the second set including a second one of memory cells, controlling a temperature of the second set based on one or more second environmental signals corresponding to at least a second transistor in the second memory cell.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: A light-emitting device includes a first electrode; a second electrode; N light-emitting units stacked between the first electrode and the second electrode; and a connection layer disposed between any two adjacent light-emitting units. A peak of an intrinsic spectrum of at least part of light-emitting units is in a range from 400 nm to 480 nm. A sum of peaks of intrinsic spectra of the N light-emitting units is in a range from N×400 nm to N×480 nm; N?2, and N is a positive integer. A difference between a color coordinate y value of the light-emitting device under a blue image at a preset viewing angle that is in a range from 60° to 75° and a color coordinate y value of the light-emitting device under the blue image at a viewing angle of 0° is in a range from 0 to 0.07.

Abstract: A switch is described. The switch includes a plurality of ports, a plurality of port logic modules, a memory, and a switch fabric. Transactions ingress and egress the switch via the ports. The port logic modules are coupled with the ports. Each port logic module has core clock domain logic for a core clock domain specific to a corresponding port. The memory includes banks. The memory and the switch fabric have a system clock domain. The core clock domain for each of the port logic modules is different from the system clock domain.

Abstract: An organic light emitting device, a preparation method therefor, and a display apparatus are provided. The organic light emitting device includes an anode, a cathode, and a light emitting layer and an electron transport layer arranged between the anode and the cathode. The electron transport layer is arranged between the light emitting layer and the cathode. The electron transport layer includes a first host material and a second host material. A mixing ratio of the first host material to the second host material of one side of the electron transport layer close to the light emitting layer is different from a mixing ratio of the first host material to the second host material of one side of the electron transport layer away from the light emitting layer.

Abstract: A testing method for a blind spot detection system for an automobile includes: applying an electromagnetic interference signal to the tested automobile through an electromagnetic interference signal application device, meanwhile, simulating a static obstacle or a moving obstacle within a detection range through a testing device, and if the blind spot detection system for the tested automobile is activated, determining that the testing is passed. Repeatable and reproducible testing for the electromagnetic safety of the blind spot detection system may be realized.

Abstract: The present disclosure provides a display panel, and belongs to the technical field of display. The display panel in the present application includes a base substrate and a plurality of pixel units on the base substrate. Each of the pixel units includes a plurality of light-emitting units emitting light in different colors. Each of the the plurality of light-emitting unit includes a first electrode, an organic functional layer and a second electrode stacked sequentially along a direction away from the base substrate. Among the plurality of light-emitting units emitting light in different colors in each pixel unit, the second electrode of the light-emitting unit emitting light with a shortest wavelength has a smallest thickness along a direction perpendicular to the base substrate.

Abstract: A switch including physical ports, virtual switches, and a switch fabric is described. A virtual switch of the virtual switches includes virtual ports corresponding to the physical ports of the switch and is configured to provide a translated routing structure (TRS). The TRS corresponds to a local identifier of a source device coupled with a corresponding physical port and is unique to the source device for the switch. The switch fabric interconnects the physical ports. In some embodiments, the switch is a compute express link (CXL) switch.

Abstract: An inverter-based comparator includes an output stage circuit including a P-type output transistor and an N-type output transistor; a first inverter having a first transition voltage with an input node coupled to an input voltage and an output node generating a first inverted voltage and coupled to a gate of the N-type output transistor; and a second inverter having a second transition voltage with an input node coupled to the input voltage and an output node generating a second inverted voltage and coupled to a gate of the P-type output transistor. The first inverter and the second inverter each includes an inverter that includes a first inverter branch composed of at least one first P-type transistor and at least one first N-type transistor; and a second inverter branch composed of at least one second P-type transistor, at least one second N-type transistor and at least two tuning switches.

Abstract: A display substrate, a display panel, an electronic device and a display method. The display substrate includes first electrodes in a first display region and second electrodes in a second display region, a first light-emitting portion in the first display region and a second light-emitting portion in the second display region, and the first electrodes being of strip shapes extending along a first direction and being spaced apart from each other along a second direction; third electrodes in the first display region and a fourth electrode in the second display region, the third electrode being of strip shapes extending along the second direction and being spaced apart from each other along the first direction.

Abstract: A system including a fabric manager, a memory mapper, and a switch is described. The memory mapper receives and stores mapping information from the fabric manager that maps memory locations in a plurality of hosts to corresponding memory locations in a plurality of physical devices. The switch receives at least a portion of the mapping information from the memory mapper, receives a request from a host, and accesses memory that is identified by the request on a physical device of the plurality of physical devices.

Abstract: A switch is described. The switch includes a plurality of ports, a plurality of port logic modules, a memory, and a switch fabric. Transactions ingress and egress the switch via the ports. The port logic modules are coupled with the ports. Each port logic module has core clock domain logic for a core clock domain specific to a corresponding port. The memory includes banks. The memory and the switch fabric have a system clock domain. The core clock domain for each of the port logic modules is different from the system clock domain.

Abstract: A display substrate, a display panel, an electronic device and a display method. The display substrate includes first electrodes in a first display region and second electrodes in a second display region, a first light-emitting portion in the first display region and a second light-emitting portion in the second display region, and the first electrodes being of strip shapes extending along a first direction and being spaced apart from each other along a second direction; third electrodes in the first display region and a fourth electrode in the second display region, the third electrode being of strip shapes extending along the second direction and being spaced apart from each other along the first direction.

Abstract: Provided are a light-emitting device and a manufacturing method thereof, a display panel and a display device. The light-emitting device includes a plurality of light-emitting units including a first, a second, and a third light-emitting unit. Each light-emitting unit includes a micro-cavity structure including an anode, a hole transport layer, a functional layer, and a cathode. The functional layer of the first light-emitting unit includes a first light-emitting layer, a first buffer layer between the first light-emitting layer and the hole transport layer of the first light-emitting unit, and a second buffer layer between the first buffer layer and the first light-emitting layer. The material of the second buffer layer is different from that of the first buffer layer, the second buffer layer has a physical thickness less than or equal to 30 nanometers and an optical thickness less than or equal to 60 nanometers.

Abstract: A light emitting substrate includes: a first base substrate, a plurality of light emitting devices located on the first base substrate, wherein the light emitting devices include a first light emitting device, a second light emitting device and a third light emitting device, each of the light emitting devices includes a first electrode layer, a light emitting functional layer and a second electrode layer which are stacked, the light emitting functional layer includes an emitting layer including a first emitting layer in the first light emitting device, a second emitting layer in the second light emitting device and a third emitting layer in the third light emitting device; the material of the first emitting layer is different from the material of the second emitting layer, and the material of the first emitting layer is different from the material of the third emitting layer.

Abstract: An inverter-based comparator, powered between a first supply voltage and a second supply voltage being lower than the first supply voltage, includes a first inverter branch composed of at least one first P-type transistor and at least one first N-type transistor; and a second inverter branch composed of at least one second P-type transistor, at least one second N-type transistor and at least two tuning switches. The first inverter branch and the second inverter branch are configured to compare an input voltage with an internal trigger point, thereby generating a compare voltage at an interconnected node. One of the at least two tuning switches is controlled to isolate the first supply voltage and another is controlled to isolate the second supply voltage to compensate for trigger point shifting.

Abstract: The present disclosure provides an organic electroluminescent device and a manufacturing method thereof. The organic electroluminescent device includes an anode, an electron transport layer and a cathode. The material of the electron transport layer includes a mixture of a first electron transport material and a second electron transport material, the lowest unoccupied molecular orbital energy level of the first electron transport material is higher than that of the second electron transport material, and the ratio of the first electron transport material to the second electron transport material first decreases and then increases in the direction from the cathode to the anode.

Abstract: A display device and a display panel thereof, and an OLED display device are provided. The OLED display device includes: a red light-emitting structure, a green light-emitting structure, and a blue light-emitting structure, where (n3z-n3xy)-(n1z-n1xy)?a first preset value, and (n3z-n3xy)-(n2z-n2xy)?a second preset value, where ranges of both the first preset value and the second preset value are 0.1˜0.

Abstract: A system includes a high bandwidth memory (HBM) arranged into portions including memory cells, the HBM further including a differentiated dynamic voltage and frequency scaling (DDVFS) device to perform the following: for a first set of one or more of the memory cells in a first one of the portions, the first set including a first one of the memory cells, controlling a temperature of the first set based on one or more first environmental signals corresponding to at least a first transistor in the first memory cell; and for a second set of one or more of the memory cells in a second one of the portions, the second set including a second one of memory cells, controlling a temperature of the second set based on one or more second environmental signals corresponding to at least a second transistor in the second memory cell.