Abstract: An interaction method of audio-video segmentation and apparatus, and a device and a storage medium. The method includes: detecting whether a selected clip exists in a target audio-video; in response to the selected clip existing in the target audio-video, displaying a split button upon detecting that a pointer on a track of the target audio-video is located in the selected clip; and splitting the selected clip, in response to a trigger operation for the split button, based on an intersection position of the pointer and the selected clip. Compared with an interaction means in which a split button resides in a pointer of a track, mis-operations of audio-video splitting can be reduced to the greatest extent, and the usage experience of a user is improved to a certain extent.

Abstract: A method for a parallelism-aware wavelength-routed optical networks-on-chip design is proposed, which is executed by a computer, the method comprising using the computer to perform the following: providing a WRONoC netlist, design specs and design rules; performing a network construction such that potential positions of each core of a plurality of cores, a plurality of waveguides and a plurality of microring resonators (MRRs) are determined to create a topology; performing a message routing to minimize MRR type usage of the MRRs in the topology; and performing a MRR radius selection to select a radius from MRR-radius options for each MRR type in said topology based on a simulated annealing.

Abstract: A substrate container with enhanced flow field therein includes a box, at least one offset inflation mechanism and at least one gas diffusion mechanism. The offset inflation mechanism is disposed outside internal receiving space of the box. The offset inflation mechanism has a gaseous chamber extending in the same direction as a bottom panel. The gas diffusion mechanism includes a base, a partition wall and at least one diffusion member. The base masks an outlet of the gaseous chamber to form an auxiliary gaseous chamber. The partition wall extends perpendicularly to the bottom panel to form a vertical first gas channel in communication with the auxiliary gaseous chamber. The diffusion member and the partition wall together define a second gas channel. The partition wall has at least one gap whereby the first gas channel and the second gas channel are in communication with each other.

Abstract: The present invention discloses an endophytic fungal strain Pseudophialophora sp. P-B313 and an application thereof, and belongs to the technical filed of microbial applications. The deposit number of the endophytic fungal strain P-B313 is CCTCC M 2021504, and the scientific name thereof is Pseudophialophora sp. The endophytic fungal strain P-B313 can enhance the resistance of rice against seedling leaf blast with a control efficiency of 87.56% and a disease index reduced by 62.59. The biological control efficiency of the endophytic fungus P-B313 against seedling leaf blast in rice has great value by promotion and applications thereof in the field of agriculture.

Abstract: Disclosed is a safety syringe that comprises a needle sleeve (1), a needle base (3) and a core rod (2). First claws (34) on the needle base (3) are configured to clamp in a first groove (111) on an inner wall of the needle sleeve (1), one of a proximal end of the needle base (3) and a distal end of the core rod (2) is provided with second claws (33), and the other one thereof is provided with a position-limiting member; the second claws (33) are configured to abut against the position-limiting member along a slanted surface.

Abstract: The present invention relates to methods, uses, and compositions for the treatment of cancer (e.g., a lung cancer; a cervical cancer; a breast cancer; a head and neck cancer; a liver cancer; a bladder cancer; a gastric cancer; an esophageal cancer; a pancreatic cancer; a kidney or renal cancer; a melanoma; an ovarian cancer; or a colorectal cancer). More specifically, the invention concerns the treatment of patients having cancer with an anti-TIGIT antagonist antibody, including treatment with an anti-TIGIT antagonist antibody in a combination therapy.

Abstract: An electronic device includes a carrier, a first electronic element, and a first connecting element. The carrier has a first bonding pad, a first conductive layer, a second conductive layer and an insulating layer with a via. The first conductive layer is disposed between the first bonding pad and the insulating layer, and electrically connected to the second conductive layer through the via. The first electronic element is disposed on the carrier and has a substrate. The first connecting element is disposed between the top surface of the first bonding pad and the first electronic element and electrically connected to the first bonding pad and the first electronic element. The substrate has a through hole which is overlapped with the first bonding pad and the first connecting element. A minimum distance between the through hole and the via is greater than zero.

Abstract: Analyzing or debugging applications is provided. The system identifies an action for an application provided by a developer. The system determines a first classification score based on historical execution of the action. The system generates a machine generated action for the application based on metadata associated with the application. The system determines a second classification score based on a comparison of the action with the machine generated action. The system selects, via a matching program, a second application that matches the application. The system determines a third classification score based on a comparison of an action approved for the second application with the action provided by the application developer. The system updates a delivery control parameter based on the first classification score, the second classification score and the third classification score. The system controls delivery of the application based on the delivery control parameter.

Abstract: Provided is a compression molding die. The die can be used for compression molding an I-shaped part without the need for machining. The molding die comprises: an outer mold with an inner diameter of d; an upper pressing disc, a lower pressing disc and a huff mold with the same outer diameter of d and the same inner diameter of f; an upper mold; a lower mold; and a core mold with a diameter of h. The upper pressing disc, the huff mold and the lower pressing disc, which are movable vertically, are arranged in the outer mold in a vertically spaced manner; the vertically movable upper mold extends into the upper pressing disc, and the vertically movable lower mold extends into the lower pressing disc; the outer mold, the upper mold, the upper pressing disc, the huff mold, the lower pressing disc and the lower mold define a cavity.

Abstract: A two-component polyurethane composition contains (A) an aqueous dispersion comprising: a hydroxyl group-containing acrylic emulsion polymer comprising, by weight based on the weight of the hydroxyl group-containing acrylic emulsion polymer, from 5% to 50% of structural units of a hydroxy-functional alkyl (meth) acrylate; and from 2% to 20%, by weight based on the weight of the hydroxyl group-containing acrylic emulsion polymer, of a branched polyether polyol; where the branched polyether polyol has a hydroxyl functionality of from 4 to 10 and a molecular weight per branch of from 1200 to 2500 grams per mole, and contains from 20% to 40% of ethylene oxide units, by weight based on the weight of the branched polyether polyol; and (B) a polyisocyanate.

Abstract: The present disclosure relates to the field of electronic measurements, and particularly to a measurement assembly of guided wave radar level gauge with high-temperature and high-pressure sealed-compensation type, includes an gauge isolation enclosure, and an upper sealing structure is mounted at a lower part of the gauge isolation enclosure, a heat dissipation section is mounted between the upper sealing structure and a middle sealing structure, and a lower sealing structure is mounted at a lower part of the middle sealing structure; a housing is disposed to sleeve the middle sealing structure, a flange is connected outside the housing, a guide cylinder is connected to a lower part of the housing, and a compensation structure and a support member are disposed in the guide cylinder. The present disclosure has the advantageous effect of adopting a multi-layer sealing design and a tightness verification design.

Abstract: A memory structure includes a substrate, a first device layer disposed on the substrate, a plurality of memory regions in the first device layer, a plurality of word lines and bit lines in the first device layer to control memory cells of the memory regions, a second device layer disposed between the substrate and the first device layer, and first peripheral regions and second peripheral regions in the second device layer, wherein in a top view, the first peripheral regions and the second peripheral regions respectively partially overlap adjacent two of the memory regions.

Abstract: A self-piercing riveting system includes a localized melting system that locally melts a target location on a metal substrate and a driver that drives a rivet into to the metal substrate after the target location is locally melted. A method of forming a joint with a self-piercing riveting system includes locally melting a target location on the at least two metal substrates. The method also includes driving a rivet into the target location, optionally with a driver, after locally melting the target location such that the rivet pierces the at least two metal substrates at the target location.

Abstract: A reconfigurable PUF device based on fully electric field-controlled domain wall motion includes a voltage control layer, upper electrodes, a lower electrode, antiferromagnetic pinning layers, and a magnetic tunnel junction (MTJ). The MTJ includes, from bottom to top, a ferromagnetic reference layer, a potential barrier tunneling layer and a ferromagnetic free layer. In the device, an energy potential well is formed in a middle portion of the ferromagnetic free layer by applying a voltage to the voltage control layer to control magnetic anisotropy, and a current is fed into either of the upper electrodes to drive generation of the magnetic domain walls and pin the magnetic domain walls to the potential well. After the voltage is removed, the potential well is lowered so that the magnetic domain walls are in a metastable state, thereby either a high resistance state or a low resistance state is randomly obtained.

Abstract: A head-mounted display device includes a main body, a first sensor and a second sensor. The first sensor is disposed on a first setting area of the main body. The second sensor is disposed on a second setting area of the main body. The first setting area and the second setting area respectively have a first central point and a second central point, where the first central point and the second central point are disposed on a horizontal axis. There is a first angle between a connection line of the first central point and the first sensor with the horizontal axis, and there is a second angle between a connection line of the second central point and the second sensor with the horizontal axis, where the first angle is different from the second angle.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: depositing a first semiconductor layer on an inner surface of a trench of a substrate; depositing a second semiconductor layer on the first semiconductor layer on the inner surface of the trench of the substrate, in which a dopant concentration of the first semiconductor layer is less than a dopant concentration of the second semiconductor layer; and depositing a third semiconductor layer on the second semiconductor layer to fill the trench of the substrate, in which a dopant concentration of the third semiconductor layer is less than the dopant concentration of the second semiconductor layer.

Abstract: A semiconductor structure includes a base structure, a first portion, a second portion and a first stack. The first portion and the second portion are disposed on the base structure and are respectively made of a first semiconductor material and a second semiconductor material which has a conductivity type opposite to that of the first semiconductor material. The first stack is disposed on the base structure and between the first portion and the second portion. The first stack includes a plurality of first semiconductor regions and a plurality of first dielectric regions disposed to alternate with the first semiconductor regions, such that each of the first semiconductor regions and the first dielectric regions extends between the first portion and the second portion. The first semiconductor regions has a dopant concentration which is lower than that of each of the first portion and the second portion.

Abstract: A method for judging aging degree of insulation of a cable T-connector based on a dynamic heat source is provided. Specifically, a temperature rise verification test platform of the cable T-connector is constructed, and heating of a cable core is simulated by using a controllable heat source. Influence of different thermal conductivity of an insulation layer on internal and external temperature responses of the cable T-connector is studied, and the temperature rise test platform is constructed to simulate the temperature response of the outer skin of the cable T-connector under the same temperature change of the internal heat source and compare the temperature response of the outer skin of the cable T-connector in different states through experiments, so as to obtain the corresponding relationship between aging degree and heat transfer capacity.

Abstract: A semiconductor structure includes a base structure, at least one diode device and a semiconductor device. The base structure has a first base region and a second base region. The at least one diode device includes a first feature formed in the first base region, and a second feature formed over the first feature and having a conductivity type opposite to that of the first feature. The semiconductor device is formed on the second base region.

Abstract: An apparatus for inspecting a semiconductor substrate includes a rotatable base configured to support a substrate, and a nozzle arm includes a nozzle and a light monitoring device. The light monitoring device includes a laser transmitter and an array of light sensors arranged in the nozzle arm and facing the substrate. The light monitoring device is configured to transmit a laser pulse towards the substrate, wherein the laser pulse impinges on the substrate, receive a reflected laser pulse from the substrate, calculate whether one or more light sensors received the laser pulse, and calculate a distance between the light monitoring device and the substrate using the turnaround time for determining a process quality on the substrate.