Abstract: Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle ?, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.

Abstract: A weld kit is presented for use in creating a weld with limited access to a structure. The weld kit contains a back plate being a combination of a thermic material attached to a metallic material. Additionally, the weld kit has a lowering device secured to the back plate. A plurality of tacking nodes travel through both the thermic material and the metallic material of the back plate. The plurality of tacking nodes are operative to accept and distribute heat from a welding arc to create a tack weld at a location where at least one of the plurality of tacking nodes contacts a weld joint. The presented weld kit may be used to repair a damaged enclosed structure. Additionally, the presented weld kit may also be used to create an enclosed structure in a manufacture type environment.

Abstract: An apparatus for supporting a backing member in an enclosed structure is disclosed. The enclosed structure includes a first plate defining an opening therethrough. The apparatus is configured to be disposed within the enclosed structure. The apparatus includes a clamp member and a support member configured to rotatably support the clamp member. The clamp member is rotatable about a rotation axis defined by the support member. The support member is further configured to abut a second plate spaced apart from the first plate. The clamp member is configured to be moved along the rotation axis relative to the support member and bias the backing member to contact with the first plate along the opening.

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.

Abstract: Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle ?, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.

Abstract: A method to join a first enclosed workpiece and a second enclosed workpiece is provided. The first enclosed workpiece includes a first connecting end and a first cavity region. The second enclosed workpiece includes a second connecting end and a second cavity region. A backing member is placed in the first connecting end, with a first end within the first cavity region. A resilient member is positioned in the first cavity region, with a first portion within the first cavity region. The second enclosed workpiece is positioned proximal to the first enclosed workpiece to define a gap between the first connecting end and the second connecting end. Upon positioning, a second end of the backing member and a second portion of the resilient member are placed within the second cavity region. The first connecting end is then welded with the second connecting end over the backing member near the gap.

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials are described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB is formed from a pressurized gas mixture containing at least one etch compound and at least one additional gas, wherein the concentration of the at least one etch compound in the GCIB exceeds 5 at % of the pressurized gas mixture.

Abstract: A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.

Abstract: An apparatus for estimating a condition of a battery includes a mode identifying unit configured to identify a usage mode of the battery during a period of time and its corresponding attenuation curve, according to recorded data on battery usage, stored usage modes of the battery and attenuation curves corresponding to the various usage modes, the attenuation curve representing a change of a fully charged capacity of the battery with battery usage; and a condition estimating unit configured to calculate battery degradation according to the recorded data, the identified usage mode and its corresponding attenuation curve, the degradation representing a quantity of the fully charged capacity of the battery that is reduced over the battery usage. The condition of the battery is estimated so as to rationally judge the residual value of the battery in operation.

Abstract: A method for controlling freezing capacity of a variable-frequency freezing AC ice-water system separates the freezing capacity of each individual requirement end so as to reduce sudden or peak concentrating freezing demand and relieve variable-frequency load demand, and defines operating procedures corresponding to different requirement ends, respectively, wherein each of the operating procedures has a corresponding high-low temperature range that can be used as a temperature buffer zone so as to redistribute supply of the freezing capacity to each requirement end, thereby allowing the compressors thereof to operate smoothly and thus achieve energy saving as a result. The drawbacks of damaged pipelines are overcome that cause deficiency in freezing capacity as encountered in prior techniques.

Abstract: A method, and system employing the method, for service channel reconfiguration at a service outlet includes generating service transaction data of a service outlet, generating queue management system (QMS) data of the service outlet, and generating cost and profit data for the service outlet. Data is extracted from the service transaction data and the QMS data relating to specified parameters including customer experience data, and customer demand data. The service transaction data and the QMS data is integrated with the cost and profit data providing a unified objective function. Stochastic service processes and customer behavior data are modeled. The unified objective function is evaluated using the stochastic service processes and customer behavior data model, and the service channel function of the service outlet is reconfigured using the unified objective function.

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of metal-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.

Abstract: A method for controlling the freezing capacity of a fixed-frequency freezing AC ice-water system, by using temperature buffer difference of individual requirement ends to control the number of operating compressors in a fixed-frequency chiller and make each of the operating compressors have a usage rate close to 100%. Further, various operating procedures are defined for the requirement ends and each of the operating procedures has an individually defined high-low temperature range such that the freezing capacity supply cycle or startup cycle of the fixed-frequency chiller can be adjusted by using the high-low temperature ranges of the operating procedures as temperature buffer strips, thereby allowing the compressors in the fixed-frequency chiller to operate collectively in order to save energy.

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of Si-containing material and/or Ge-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of metal-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of Si-containing material and/or Ge-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.

Abstract: A method for controlling the freezing capacity of a fixed-frequency freezing AC ice-water system, by using temperature buffer difference of individual requirement ends to control the number of operating compressors in a fixed-frequency chiller and make each of the operating compressors have a usage rate close to 100%. Further, various operating procedures are defined for the requirement ends and each of the operating procedures has an individually defined high-low temperature range such that the freezing capacity supply cycle or startup cycle of the fixed-frequency chiller can be adjusted by using the high-low temperature ranges of the operating procedures as temperature buffer strips, thereby allowing the compressors in the fixed-frequency chiller to operate collectively in order to save energy.