Abstract: A method for controlling freezing capacity of a variable-frequency freezing AC ice-water system separates the freezing capacity of each individual requirement end so as to reduce sudden or peak concentrating freezing demand and relieve variable-frequency load demand, and defines operating procedures corresponding to different requirement ends, respectively, wherein each of the operating procedures has a corresponding high-low temperature range that can be used as a temperature buffer zone so as to redistribute supply of the freezing capacity to each requirement end, thereby allowing the compressors thereof to operate smoothly and thus achieve energy saving as a result. The drawbacks of damaged pipelines are overcome that cause deficiency in freezing capacity as encountered in prior techniques.

Abstract: A method, and system employing the method, for service channel reconfiguration at a service outlet includes generating service transaction data of a service outlet, generating queue management system (QMS) data of the service outlet, and generating cost and profit data for the service outlet. Data is extracted from the service transaction data and the QMS data relating to specified parameters including customer experience data, and customer demand data. The service transaction data and the QMS data is integrated with the cost and profit data providing a unified objective function. Stochastic service processes and customer behavior data are modeled. The unified objective function is evaluated using the stochastic service processes and customer behavior data model, and the service channel function of the service outlet is reconfigured using the unified objective function.

Abstract: A method for infusing material below the surface of a substrate is described. The method comprises modifying a surface condition of a surface on a substrate to produce a modified surface layer, and thereafter, infusing material into the modified surface in the substrate by exposing the substrate to a gas cluster ion beam (GCIB) comprising the material.

Abstract: Mixtures and light-emitting devices that incorporate such mixtures are disclosed in which a soluble phenyl-substituted poly(para-phenylene vinylene) (PPV) copolymer (“superyellow”) is used as the host light-emitting polymer and methyltrioctylammonium trifluoromethanesulfonate, an ionic liquid, is used to introduce a dilute concentration of mobile ions into the emitting polymer layer. These mixtures and devices incorporating them are able to combine some of the characteristics of polymer light emitting diodes (PLEDs) and polymer light-emitting electrochemical cells (PLECs).

Abstract: A method and device for adjusting a beam property, such as a beam size, a beam shape or a beam divergence angle, in a gas cluster beam prior to ionization of the gas cluster beam is described. A gas cluster ion beam (GCIB) source is provided, comprising a nozzle assembly having a gas source, a stagnation chamber and a nozzle that is configured to introduce under high pressure one or more gases through the nozzle to a vacuum vessel in order to produce a gas cluster beam. Additionally, the GCIB source comprises a gas skimmer positioned downstream from the nozzle assembly that is configured to reduce the number of energetic, smaller particles in the gas cluster beam. Furthermore, the GCIB source comprises a beam adjustment device positioned downstream from the gas skimmer that is configured to adjust at least one beam property of the gas cluster beam, and an ionizer positioned downstream from the beam adjustment device that is configured to ionize the gas cluster beam to produce a GCIB.

Abstract: A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.

Abstract: A method for infusing material below the surface of a substrate is described. The method comprises modifying a surface condition of a surface on a substrate to produce a modified surface layer, and thereafter, infusing material into the modified surface in the substrate by exposing the substrate to a gas cluster ion beam (GCIB) comprising the material.

Abstract: A photovoltaic device has a first electrode, a second electrode spaced apart from the first electrode, and a layer of light responsive material disposed between the first electrode and the second electrode. The layer of light responsive material includes a material that has a triplet exciton state which can be excited by incident electromagnetic radiation to provide collectable free charged particles at one of the first and second electrodes.

Abstract: A method and device for adjusting a beam property, such as a beam size, a beam shape or a beam divergence angle, in a gas cluster beam prior to ionization of the gas cluster beam is described. A gas cluster ion beam (GCIB) source is provided, comprising a nozzle assembly having a gas source, a stagnation chamber and a nozzle that is configured to introduce under high pressure one or more gases through the nozzle to a vacuum vessel in order to produce a gas cluster beam. Additionally, the GCIB source comprises a gas skimmer positioned downstream from the nozzle assembly that is configured to reduce the number of energetic, smaller particles in the gas cluster beam. Furthermore, the GCIB source comprises a beam adjustment device positioned downstream from the gas skimmer that is configured to adjust at least one beam property of the gas cluster beam, and an ionizer positioned downstream from the beam adjustment device that is configured to ionize the gas cluster beam to produce a GCIB.

Abstract: Mixtures and light-emitting devices that incorporate such mixtures are disclosed in which a soluble phenyl-substituted poly(para-phenylene vinylene) (PPV) copolymer (“superyellow”) is used as the host light-emitting polymer and methyltrioctylammonium trifluoromethanesulfonate, an ionic liquid, is used to introduce a dilute concentration of mobile ions into the emitting polymer layer. These mixtures and devices incorporating them are able to combine some of the characteristics of polymer light emitting diodes (PLEDs) and polymer light-emitting electrochemical cells (PLECs).

Abstract: A method for use in making electronic and photonic devices wherein said devices include at least one multifunctional organic layer. The method involves first providing a substrate having a surface onto which a multifunctional organic layer is to be deposited. A single evaporation source is provided that includes a mixture of at least two organic compounds. The organic compounds can be matrix materials, and dopants if desired, that are used in making electronic and photonic devices. The single evaporation source is heated for a sufficient time and at a sufficient temperature to provide deposition of the organic compounds onto the surface of the substrate to form the multifunctional organic layer.

Abstract: A series of emitting materials used for organic EL based on tridentate ligands are characterized as Formula 1, Formula 2 and Formula 3, where: the group O-I-N is a bidentate ligand such as 8-hydroxyquinoline and 2-(o-hydroxyphenyl)-benzoxazole, II, III are unsubstituted or substituted aryl groups. The substituted groups can have 1-8 carbon atoms, halogen, cyano, amino, amido, sulfonyl, carbonyl, aryl, or heteroalkyl groups. The ligand including II and III is a tridentate ligand with three chelate atoms: two oxygen atoms and one nitrogen atom. The central metal atoms can be trivalent or tetravalent atoms such as Al, In, Ga, Tl, and Sn. These materials can be used as emitting materials or electronic transport materials in organic EL devices.

Abstract: A series of emitting materials used for organic EL based on tridentate ligands are characterized as Formula 1, Formula 2 and Formula 3. where: I is a bidentate ligand such as 8-hydroxyquinoline and 2-(o-hydroxyphenyl)-benzoxazole, II, III are unsubstituted or substituted aryl groups. The substituted groups can have 1-8 carbon atoms, halogen, cyano, amino, amido, sulfonyl, carbonyl, aryl, or heteroalkyl groups. The ligand including II and III is a tridentate ligand with three chelate atoms: two oxygen atoms and one nitrogen atom. The central metal atoms can be trivalent or tetravalent atoms such as Al, In, Ga, Tl, and Sn. These materials can be used as emitting materials or electronic transport materials in organic EL devices.