Abstract: A semiconductor package structure includes a first insulating layer, a first conductive layer, a multi-layered circuit structure, a protection layer, and a semiconductor chip electrically connected to the multi-layered circuit structure. The first insulating layer defines a first through hole extending through the first insulating layer. The first conductive layer includes a conductive pad disposed in the first through hole and a trace disposed on an upper surface of the first insulating layer. The multi-layered circuit structure is disposed on an upper surface of the first conductive layer. The multi-layered circuit structure includes a bonding region disposed on the conductive pad of the first conductive layer and an extending region disposed on the trace of the first conductive layer. The protection layer covers the upper surface of the first insulating layer and the extending region of the multi-layered circuit structure, and exposes the bonding region of the multi-layered circuit structure.

Abstract: The present disclosure relates to a wiring structure and a semiconductor package. The wiring structure comprises a first wiring pattern, a dielectric layer and a dummy structure. The first wiring pattern includes a conductive land having a width W1 and a surface area A, and a conductive trace having a width W2 and electrically connected to the conductive land, wherein ((W1*W2)/A)*100% about 25%. The dielectric layer covers the first wiring pattern, and the dummy structure is adjacent to the conductive trace.

Abstract: A wiring structure includes a dielectric layer and a first patterned conductive layer on the dielectric layer. The dielectric layer has a first region and a second region. The first patterned conductive layer includes a number of fine conductive lines and a number of dummy conductive structures. The number of conductive lines include a first number of conductive lines on the first region and a second number of conductive lines on the second region, and the number of dummy conductive structures include a first number of dummy conductive structures on the second region. The first number of conductive lines occupy a first area on the first region, and the second number of conductive lines and the first number of dummy conductive structures occupy a second area on the second region. A ratio of the second area to the first area is greater than or equal to about 80%.