Patents by Inventor Yang Hao

Yang Hao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250141115
    Abstract: An object is to provide a small directional antenna. A radio wave deflection element is formed as a plate-like member including a plurality of stacked dielectric layers, having a principal surface perpendicular to a first direction, and having a longitudinal direction in a second direction perpendicular to the first direction; and a radio wave source is disposed so as to be separated from the radio wave deflection element in the first direction and offset from a center of the radio wave deflection element by a predetermined distance in the first direction, and configured to emit a radio wave to the radio wave deflection element. Dielectric constants of the plurality of dielectric layers decrease in a stepwise manner as a distance from the center of the radio wave deflection element increases in the first direction.
    Type: Application
    Filed: December 30, 2024
    Publication date: May 1, 2025
    Applicant: AGC Inc.
    Inventors: Yang HAO, Henry GIDDENS, Osamu KAGAYA, Shimpei TOMIDA
  • Publication number: 20230227015
    Abstract: A method for determining a vacuum degree threshold is provided including: e acquiring the current altitude signal of a vehicle; when the current altitude signal is invalid, acquiring a vacuum degree threshold and a standard working time, which correspond to a historical altitude signal received by an electronic vacuum pump of the vehicle last time, the vacuum degree threshold includes a vacuum degree turn-on threshold value and a vacuum degree turn-off threshold; acquiring the actual working time of the vacuum degree threshold corresponding to the historical altitude signal of the electronic vacuum pump when the current working cycle is completed; and when the difference between the actual working time and the standard working time exceeds a preset range, updating, according to the difference, the vacuum degree threshold corresponding to the historical altitude signal, and taking the updated vacuum degree threshold as a target vacuum degree threshold of the next working cycle.
    Type: Application
    Filed: September 3, 2021
    Publication date: July 20, 2023
    Inventors: Wenlong Chen, Hao Zhang, Yanlong Geng, Yang Hao, Linxiao Wang
  • Publication number: 20230173950
    Abstract: A method and system for managing energy of a fuel cell vehicle and a vehicle. The method is applied to a vehicle including a fuel cell, the vehicle further includes a power battery and a motor, the fuel cell and the power battery are electrically connected to the motor, and the method includes: acquiring a required power of the vehicle, a rated output power of the fuel cell and a current energy efficiency of the power battery; and according to at least one of the required power, the rated output power and the current energy efficiency, controlling the power battery to operate, and controlling the fuel cell to supply electric power at the rated output power or stop supplying electric power.
    Type: Application
    Filed: May 8, 2021
    Publication date: June 8, 2023
    Inventors: Maiqing WU, Nan ZHANG, Dandan SONG, Haijun SONG, Yang HAO, Chaozhi ZHANG
  • Publication number: 20230139991
    Abstract: The present disclosure provides a method and system for determining a pure electric available power and a vehicle, the method being applied to a vehicle including a fuel cell, the vehicle further including a battery pack and a motor, the fuel cell and the battery pack being electrically connected to the motor, wherein the method includes: monitoring a current travelling state of the vehicle and a current on-off state of the fuel cell; acquiring a maximum peak power outputted by the motor, a maximum output power of the battery pack and a starting-up power of the fuel cell; and according to the current travelling state, the current on-off state of the fuel cell, the maximum peak power, the maximum output power and the starting-up power, determining the pure electric available power.
    Type: Application
    Filed: April 9, 2021
    Publication date: May 4, 2023
    Inventors: Maiqing WU, Shengbo WANG, Lei LI, Zhiwei LIU, Yang HAO, Gengnan ZHANG, Linxiao WANG, Yazhou SHEN, Mingwang ZHOU, Yanlong GENG
  • Publication number: 20230034887
    Abstract: A method for determining a remaining range of a vehicle, including: determining a remaining range of the vehicle driven depending on a current residual energy of a power battery, determining a remaining range of the vehicle driven depending on a current residual energy of a fuel cell, and determining a remaining range of the vehicle driven depending on a recuperated energy when an energy recuperation function of the vehicle is activated; and determining the remaining range of the vehicle based on the aforesaid remaining ranges of the vehicle. According to this method of the present disclosure, the remaining range of the vehicle may be accurately reflected, and it is more convenient for a user to schedule a vehicle trip.
    Type: Application
    Filed: April 28, 2021
    Publication date: February 2, 2023
    Inventors: Maiqing WU, Lei LI, Na LU, Yang HAO, Mingwang ZHOU
  • Patent number: 11283154
    Abstract: A communications terminal includes an antenna Which includes a circuit hoard, a radiator, two feeds, and two coupling structures. The radiator is disposed around an outer edge of the circuit board, and a ring-shape slot is formed between the outer edge of the circuit board and the radiator. A first feed is electrically coupled to a first coupling structure, the first coupling structure is coupled to the radiator along one direction, and a current in a first polarization direction is formed on the circuit board by using the radiator and the ring-shape slot. A second feed is electrically coupled to a second coupling structure, the second coupling structure is coupled to the radiator along another direction, and a current in a second polarization direction is formed on the circuit board by using the radiator and the ring-shape slot. A specific included angle is formed between the above two directions.
    Type: Grant
    Filed: May 28, 2016
    Date of Patent: March 22, 2022
    Assignee: Huawei Device Co., Ltd.
    Inventors: Dingliang Wen, Yang Hao, Hanyang Wang, Hai Zhou, Shuhui Sun
  • Patent number: 11219972
    Abstract: A soldering process method includes the following steps. A temperature profile of generating a solder structure is measured. A final product of the solder structure is tested and recorded. A machine learning method is used to repeatedly compare and analyze a relationship between a plurality of the temperature profiles of the solder structure and a corresponding final product of the solder structure so as to find an optimal temperature profile model in accordance with quality control requirements.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: January 11, 2022
    Assignee: DELTA ELECTRONICS, INC.
    Inventors: Shu-Han Wu, Hung-Wen Chen, Qi-Ming Huang, Yang-Hao Chou, Yun-Chung Sun
  • Publication number: 20190319339
    Abstract: A communications terminal includes an antenna Which includes a circuit hoard, a radiator, two feeds, and two coupling structures. The radiator is disposed around an outer edge of the circuit board, and a ring-shape slot is formed between the outer edge of the circuit board and the radiator. A first feed is electrically coupled to a first coupling structure, the first coupling structure is coupled to the radiator along one direction, and a current in a first polarization direction is formed on the circuit board by using the radiator and the ring-shape slot. A second feed is electrically coupled to a second coupling structure, the second coupling structure is coupled to the radiator along another direction, and a current in a second polarization direction is formed on the circuit board by using the radiator and the ring-shape slot. A specific included angle is formed between the above two directions.
    Type: Application
    Filed: May 28, 2016
    Publication date: October 17, 2019
    Inventors: Dingliang Wen, Yang Hao, Hanyang Wang, Hai Zhou, Shuhui Sun
  • Publication number: 20190291217
    Abstract: A soldering process method includes the following steps. A temperature profile of generating a solder structure is measured. A final product of the solder structure is tested and recorded. A machine learning method is used to repeatedly compare and analyze a relationship between a plurality of the temperature profiles of the solder structure and a corresponding final product of the solder structure so as to find an optimal temperature profile model in accordance with quality control requirements.
    Type: Application
    Filed: August 21, 2018
    Publication date: September 26, 2019
    Inventors: Shu-Han WU, Hung-Wen CHEN, Qi-Ming HUANG, Yang-Hao CHOU, Yun-Chung SUN
  • Patent number: 10199740
    Abstract: A lens design method is disclosed for designing a lens to reshape an actual far-field radiation pattern of a radiation source, such as a spiral antenna, to a preferred far-field radiation pattern. The method comprises:—determining a preferred far-field radiation pattern of the radiation source;—deriving a corresponding near-field radiation pattern from the preferred far-field radiation pattern;—determining an actual near-field pattern of the radiation source;—mapping an electric field and a magnetic field of the actual near-field radiation pattern to the derived near-field radiation pattern using a transfer relationship, the transfer relationship comprising material parameters which characterize the lens; and,—determining the material parameters.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: February 5, 2019
    Assignee: BAE Systems plc
    Inventor: Yang Hao
  • Publication number: 20170162944
    Abstract: A lens design method is disclosed for designing a lens to reshape an actual far-field radiation pattern of a radiation source, such as a spiral antenna, to a preferred far-field radiation pattern. The method comprises: —determining a preferred far-field radiation pattern of the radiation source; —deriving a corresponding near-field radiation pattern from the preferred far-field radiation pattern; —determining an actual near-field pattern of the radiation source; —mapping an electric field and a magnetic field of the actual near-field radiation pattern to the derived near-field radiation pattern using a transfer relationship, the transfer relationship comprising material parameters which characterise the lens; and, —determining the material parameters.
    Type: Application
    Filed: March 18, 2015
    Publication date: June 8, 2017
    Inventor: Yang HAO
  • Patent number: 9653620
    Abstract: A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.
    Type: Grant
    Filed: November 4, 2015
    Date of Patent: May 16, 2017
    Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Alexander Dietrich Hölke, Deb Kumar Pal, Kia Yaw Kee, Yang Hao
  • Publication number: 20160056305
    Abstract: A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.
    Type: Application
    Filed: November 4, 2015
    Publication date: February 25, 2016
    Applicant: X-Fab Semiconductor Foundries AG
    Inventors: Alexander Dietrich Holke, Deb Kumar Pal, Kia Yaw Kee, Yang Hao
  • Patent number: 8841186
    Abstract: The disclosed method of manufacturing (110, 120, 130, 140) a semiconductor device (12) has the steps (112, 114, 116) of: forming at least one wall (33) of a body (44) of the semiconductor device (12) by etching at least one trench (22) for a gate (42) of the semiconductor device (12) into the body (44); and performing a slanted implantation doping (126, 128) into the at least one wall (33) of the body (44), after the etching (112) of the at least one trench (22) and prior to coating the at least one trench (22) with an insulating layer (29).
    Type: Grant
    Filed: March 4, 2010
    Date of Patent: September 23, 2014
    Assignee: X-Fab Semiconductor Foundries AG
    Inventors: Alexander Hoelke, Deb Kumar Pal, Kia Yaw Kee, Yang Hao
  • Patent number: 8759942
    Abstract: The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: June 24, 2014
    Assignee: X-FAB Semiconductor Foundries AG
    Inventors: Alexander Hoelke, Deb Kumar Pal, Pei Shan Chua, Gopalakrishnan Kulathu Sankar, Kia Yaw Kee, Yang Hao, Uta Kuniss
  • Patent number: 8376295
    Abstract: A dual-layer suction cup includes an outer body, an adhesive soft inner body and an elastic unit. The outer body is made of a hard material. The adhesive soft inner body can be attached to a smooth airtight surface and a rough airtight surface, providing an adhesion effect. The elastic unit will provide elasticity in an opposite direction after being pressed, such that the chamber in the suction cup is in a vacuum state to enhance the adhesion effect. The adhesive soft inner body and the elastic unit of the present invention greatly enhance the adhesion effect.
    Type: Grant
    Filed: January 6, 2011
    Date of Patent: February 19, 2013
    Inventors: Yang Hao, Ming Da Huang
  • Publication number: 20120319193
    Abstract: The disclosed method of manufacturing (110, 120, 130, 140) a semiconductor device (12) has the steps (112, 114, 116) of: forming at least one wall (33) of a body (44) of the semiconductor device (12) by etching at least one trench (22) for a gate (42) of the semiconductor device (12) into the body (44); and performing a slanted implantation doping (126, 128) into the at least one wall (33) of the body (44), after the etching (112) of the at least one trench (22) and prior to coating the at least one trench (22) with an insulating layer (29).
    Type: Application
    Filed: March 4, 2010
    Publication date: December 20, 2012
    Inventors: Alexander Hoelke, Deb Kumar Pal, Kia Yaw Kee, Yang Hao
  • Publication number: 20120175484
    Abstract: A dual-layer suction cup includes an outer body, an adhesive soft inner body and an elastic unit. The outer body is made of a hard material. The adhesive soft inner body can be attached to a smooth airtight surface and a rough airtight surface, providing an adhesion effect. The elastic unit will provide elasticity in an opposite direction after being pressed, such that the chamber in the suction cup is in a vacuum state to enhance the adhesion effect. The adhesive soft inner body and the elastic unit of the present invention greatly enhance the adhesion effect.
    Type: Application
    Filed: January 6, 2011
    Publication date: July 12, 2012
    Inventors: Yang Hao, Ming Da Huang
  • Publication number: 20120161276
    Abstract: The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.
    Type: Application
    Filed: May 22, 2009
    Publication date: June 28, 2012
    Inventors: Deb Kumar Pal, Alexander Hoelke, Pei Shan Chua, Gopalakrishnan Kulathu Sankar, Kia Yaw Kee, Yang Hao, Uta Kuniss
  • Publication number: 20120085879
    Abstract: A dual-layer sucking disc includes a sucking body capable of adhering to a smooth surface. The sucking body has an annular closing surface which is a plane and disposed around the periphery of the sucking body. The sucking body has a concave bottom to form a sucking chamber. An inner soft layer is provided in the sucking chamber of the sucking body, which is capable of adhering to a rough surface. The inner soft layer is attached to the sucking chamber except the annular closing surface. The present invention can adhere to a smooth airtight surface with the annular closing surface or a rough airtight surface with the inner soft layer. The present invention is simply in configuration and can be manufactured with ease and used widely.
    Type: Application
    Filed: October 7, 2010
    Publication date: April 12, 2012
    Inventor: Yang Hao