Abstract: The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.

Abstract: A dual-layer suction cup includes an outer body, an adhesive soft inner body and an elastic unit. The outer body is made of a hard material. The adhesive soft inner body can be attached to a smooth airtight surface and a rough airtight surface, providing an adhesion effect. The elastic unit will provide elasticity in an opposite direction after being pressed, such that the chamber in the suction cup is in a vacuum state to enhance the adhesion effect. The adhesive soft inner body and the elastic unit of the present invention greatly enhance the adhesion effect.

Abstract: The disclosed method of manufacturing (110, 120, 130, 140) a semiconductor device (12) has the steps (112, 114, 116) of: forming at least one wall (33) of a body (44) of the semiconductor device (12) by etching at least one trench (22) for a gate (42) of the semiconductor device (12) into the body (44); and performing a slanted implantation doping (126, 128) into the at least one wall (33) of the body (44), after the etching (112) of the at least one trench (22) and prior to coating the at least one trench (22) with an insulating layer (29).

Abstract: A dual-layer suction cup includes an outer body, an adhesive soft inner body and an elastic unit. The outer body is made of a hard material. The adhesive soft inner body can be attached to a smooth airtight surface and a rough airtight surface, providing an adhesion effect. The elastic unit will provide elasticity in an opposite direction after being pressed, such that the chamber in the suction cup is in a vacuum state to enhance the adhesion effect. The adhesive soft inner body and the elastic unit of the present invention greatly enhance the adhesion effect.

Abstract: The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.

Abstract: A dual-layer sucking disc includes a sucking body capable of adhering to a smooth surface. The sucking body has an annular closing surface which is a plane and disposed around the periphery of the sucking body. The sucking body has a concave bottom to form a sucking chamber. An inner soft layer is provided in the sucking chamber of the sucking body, which is capable of adhering to a rough surface. The inner soft layer is attached to the sucking chamber except the annular closing surface. The present invention can adhere to a smooth airtight surface with the annular closing surface or a rough airtight surface with the inner soft layer. The present invention is simply in configuration and can be manufactured with ease and used widely.

Abstract: The present invention provides a refresh controller for embedded DRAM, configured to receive an external access signal and generate refresh enabling signal REFN, refresh address signal CRA and confliction signal, said embedded DRAM comprising a plurality of memory groups, said controller comprising: a status controlling module that generates refresh enabling signal REFN and last refresh signal last_ccr according to the refresh interval and clock cycles; a refresh searching module that searches in said plurality of memory bank groups for at least one memory bank group that is to be refreshed in the refresh interval, and generates refresh address signal CRA according to the external access signal and the searched memory bank group; a scoreboard module that records the status of each of said plurality of memory bank groups according to said refresh address signal CRA and external access signal; and a confliction detecting module that generates confliction signal according to said external access signal, last ref

Abstract: The present invention provides a refresh controller for embedded DRAM, configured to receive an external access signal and generate refresh enabling signal REFN, refresh address signal CRA and confliction signal, said embedded DRAM comprising a plurality of memory groups, said controller comprising: a status controlling module that generates refresh enabling signal REFN and last refresh signal last_ccr according to the refresh interval and clock cycles; a refresh searching module that searches in said plurality of memory bank groups for at least one memory bank group that is to be refreshed in the refresh interval, and generates refresh address signal CRA according to the external access signal and the searched memory bank group; a scoreboard module that records the status of each of said plurality of memory bank groups according to said refresh address signal CRA and external access signal; and a confliction detecting module that generates confliction signal according to said external access signal, last ref