Abstract: This disclosure provides a method for ping pong roaming control performed by an access point (AP), a method for ping pong roaming control performed by a controller, an AP, a controller, a non-transitory computer readable storage medium and a computer program product for processing/identifying ping pong roaming. The method for ping pong roaming control, performed by an AP includes: determining association switching behaviors of a station (STA) based on association and/or disassociation behaviors of the STA; identifying one or more connection instability events of the STA based on the association switching behaviors of the STA; and reporting at least one of the one or more connection instability events of the STA to a controller for the controller to identify a ping pong roaming event of the STA between multiple APs.

Abstract: A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.

Abstract: A device is provided. The device includes multiple transistors, a first sense circuit, and a precharge circuit. The transistors are coupled to a tracking bit line and configured to generate a first tracking signal. The first sense circuit is configured to generate a first sense tracking signal in response to the first tracking signal. The precharge circuit is configured to generate, in response to a rising edge and a falling edge of the first sense tracking signal, a precharge signal for precharging data lines.

Abstract: The invention relates to a perovskite tandem solar cell based on a tunneling layer of two-dimensional layered metal carbides and metal nitrides, the tunneling junction composite layer is prepared by using two-dimensional layered metal carbides and metal nitrides, a dense layer is arranged on one side of the tunneling junction composite layer, and a transport layer is arranged on the other side. The two-dimensional layered metal carbide and metal nitride materials are selected from graphene, Ti3C2Tx, Mo2CTx, V2CTx, Nb2CTx and Ti2CTx. The tunneling junction structure of the invention can effectively reduce the light loss in the tandem solar cell and the interface recombination of the tandem cell, which can significantly improve the photocurrent generation and charge transfer of the perovskite/perovskite tandem solar cell, and improve the power conversion efficiency of the perovskite/perovskite tandem solar cell.

Abstract: The present disclosure relates to the field of inorganic non-metallic optoelectronic functional materials, and discloses wet-resistant fluoride red phosphor and preparation and application thereof, and a white light LED device. The fluoride red phosphor is a core-shell structure: the core is Mn4+ doped fluoride red phosphor, and the chemical structural formula is A2B1-xF6:xMn4+, herein A is at least one of Li, Na, K, Rb, and Cs, B is at least one of Ti, Si, Ge, Zr, and Sn, and 0?x?0.4; and the shell is a cubic perovskite-type compound, and the chemical structural formula is CMgF3, herein C is at least one of Li, Na, K, Rb, and Cs. The present disclosure uses CMgF3 generated as a coating waterproof layer, to form the A2B1-xF6:xMn4+ core-shell structure of which the surface is coated by CMgF3, and a wet-resistant problem of the fluoride red phosphor is overcome.

Abstract: A device includes a first memory bank and a second memory bank. The first memory bank is configured to operate according to a write data signal and a first global write signal associated with a first clock signal. The second memory bank is configured to operate according to the write data signal and a second global write signal associated with a second clock signal. One of the first clock signal and the second clock signal is in oscillation when another one of the first clock signal and the second clock signal is in suspension.

Abstract: A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.

Abstract: A device is provided. The device includes multiple transistors, a first sense circuit, and a precharge circuit. The transistors are coupled to a tracking bit line and configured to generate a first tracking signal. The first sense circuit is configured to generate a first sense tracking signal in response to the first tracking signal. The precharge circuit is configured to generate, in response to a rising edge and a falling edge of the first sense tracking signal, a precharge signal for precharging data lines.

Abstract: A device includes a first memory bank and a second memory bank. The first memory bank is configured to operate according to a write data signal and a first global write signal associated with a first clock signal. The second memory bank is configured to operate according to the write data signal and a second global write signal associated with a second clock signal. One of the first clock signal and the second clock signal is in oscillation when another one of the first clock signal and the second clock signal is in suspension.

Abstract: A feeding device includes a material rack configured to support a carrier board, a ratchet mechanism disposed outside the material rack, a locking mechanism disposed outside the material rack, and a triggering mechanism. The locking mechanism can engage with the ratchet mechanism. The triggering mechanism an drive the ratchet mechanism to move back and forth in a first direction, thereby controlling the locking mechanism to move back and forth in a second direction different from the first direction, so that the material rack alternates between a locked state and an unlocked state.

Abstract: An upflow reactor (1), includes a housing (20), a catalyst bed layer (30) and a pressing device (10). The housing (20) is internally provided with a reaction chamber (210), a reaction material inlet (220) and a reaction material outlet (230) which are in communication with the reaction chamber (210) are provided on the housing (20). The catalyst bed layer (30) is provided within the reaction chamber (210), the pressing device (10) is provided within the reaction chamber (210) and located above the catalyst bed layer (30). At least a part of the pressing device (10) is movable up and down so that the at least a part of the pressing device (10) can be pressed against the catalyst bed layer (30).

Abstract: The present application provides a remote-controlled gun, comprising a gun base, a gun body, an angle adjustment device, a camera, and a remote controller, wherein the angle adjustment device is connected with the gun body and the gun base, and configured for adjusting a pitch shooting angle of the gun body with respect to the gun base in a vertical plane and a left and right swing angle of the gun body with respect to the gun base in a horizontal plane; the camera is configured for monitoring a shooting target and a front sight of the gun body; the remote controller is connected with the camera and configured for displaying a monitoring image of the camera; and the remote controller is also connected with the angle adjustment device and configured for controlling the gun body to rotate with respect to the gun base until the front sight is aligned with the shooting target within a monitoring area; and the remote controller is also connected with the gun body, and configured for controlling the shooting of the

Abstract: An ultrasound imaging system may include a user interface that may be adapted based, at least in part, on usage data of one or more users. The functions of soft or hard controls may be changed in some examples. The layout or appearance of soft or hard controls may be altered in some examples. In some examples, seldom used controls may be removed from the user interface. In some examples, the user interface may be adapted based on an anatomical feature being imaged. In some examples, the usage data may be analyzed by an artificial intelligence/machine learning model, which may provide outputs that may be used to adapt the user interface.

Abstract: A device is provided. The device includes multiple transistors, a first sense circuit, and a precharge circuit. The transistors are coupled to a tracking bit line and configured to generate a first tracking signal. The first sense circuit is configured to generate a first sense tracking signal in response to the first tracking signal. The precharge circuit is configured to generate, in response to a rising edge and a falling edge of the first sense tracking signal, a precharge signal for precharging data lines.

Abstract: A device includes a first memory bank and a second memory bank. The first memory bank is configured to operate according to a write data signal and a first global write signal associated with a first clock signal. The second memory bank is configured to operate according to the write data signal and a second global write signal associated with a second clock signal. One of the first clock signal and the second clock signal is in oscillation when another one of the first clock signal and the second clock signal is in suspension.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: A device is disclosed. The device includes a first tracking control line, a first tracking circuit, a first sense circuit, and a precharge circuit. The first tracking control line is configured to transmit a first tracking control signal. The first tracking circuit is configured to generate, in response to the first tracking control signal, a first tracking signal associated with first tracking cells in a memory array. The first sense circuit is configured to receive the first tracking signal, and is configured to generate a first sense tracking signal in response to the first tracking signal. The precharge circuit is configured to generate, in response to a rising edge of the first sense tracking signal and a falling edge of a read enable delayed signal, a precharge signal for precharging data lines associated with memory cell in the memory array. A method is also disclosed herein.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: A large-flow precious metal channel is provided, which comprises a molten glass mixed-flow stirring section, at least two molten glass heating, clarifying and cooling sections are connected in parallel at one end of the molten glass mixed-flow stirring section, the other end of which is communicated with a liquid supply tank. The channel is mainly used for the clarification and homogenization of large-flow high-temperature molten glass in the production process of 8.5-generation and higher-generation TFT glass, and provides bubble-free and streak-free high-quality molten glass for subsequent float forming or overflow forming processes.