Patents by Inventor Yang Ju

Yang Ju has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210148830
    Abstract: A seed sampling system is provided comprising an automated seed loading assembly operable to singulate seeds from a plurality of seeds or enable loading of individually stored seeds and an automated seed sampling assembly comprising at least one sampling module operable to remove tissue samples from one of the singulated seeds. The system also includes an automated seed transport assembly comprising at least one retention member operable to transfer the singulated seeds from at least one elevator unit of the seed loading assembly to the at least one sampling module of the seed sampling assembly. In connection therewith, the at least one sampling module includes multiple sampling locations, each associated with a sampler, where the at least one sampling module is operable to remove tissue samples from seeds at one of sampling locations while another one of the sampling locations is cleaned to remove residual seed tissue therefrom.
    Type: Application
    Filed: June 19, 2018
    Publication date: May 20, 2021
    Inventors: Wayne BROWN, Michael Joseph DAYAWON, David W. FINLEY, William Michael FISCHER, Yang Ju IM, John Michael JENSEN, Jeffrey Lawrence KOHNE, Matthew J. WEIS
  • Publication number: 20210143369
    Abstract: A display apparatus includes a base substrate, a light emitting structure disposed on the base substrate, and a thin film encapsulation layer disposed on the light emitting structure and including at least one inorganic layer and at least one organic layer. The at least one inorganic layer includes a high density layer having a density of greater than or equal to about 2.0 g/cm3 and a low density layer having a density of less than about 2.0 g/cm3. The high density layer and the low density layer are in contact with each other.
    Type: Application
    Filed: August 12, 2020
    Publication date: May 13, 2021
    Applicant: Samsung Display Co., LTD.
    Inventors: Chang Yeong SONG, Won Jong KIM, Yi Su KIM, Jong Woo KIM, Hye In YANG, Woo Suk JUNG, Yong Chan JU, Jae Heung HA
  • Publication number: 20210144351
    Abstract: Disclosed is an image processing method based on sensor characteristics. The method includes the following steps: obtaining a constant of a relation “c??(x)/?{square root over (x)}” between output signals “x” and the noise standard deviation “?(x)” of the output signals, in which the output signals are outputted by a sensor based on a sensor gain such as an ISO value of a camera; and calculating an output value of a target pixel according to pixel values within a sampling window, the constant, and a front-end gain such as an auto exposure gain, in which the pixel values include an input value of the target pixel.
    Type: Application
    Filed: November 9, 2020
    Publication date: May 13, 2021
    Inventors: YANG-TING CHOU, TSUNG-HSUAN LI, WAN-JU TANG, SHIH-TSE CHEN
  • Patent number: 11001517
    Abstract: Disclosed is a bioreactor for treating sewage comprising an aerobic tank including a mixing cell for receiving sewage to be supplied from an inlet and mixing the sewage with activated sludge and an aerobic reactor tank in which the activated sludge adsorbs organic substance existing in the sewage; a backwashing cartridge filter for removing floc resulting from growth of the activated sludge adsorbing the organic substance; and an anaerobic tank for carrying out a denitrification process for denitrifying treated water flowed through the backwashing cartridge filter using anaerobic ammonium oxidation (anammox) bacteria wherein the backwashing cartridge filter allows the sewage discharged from the aerobic tank to pass through the cartridge filter and separates the floc and the treated water using difference in size between the floc contained in the sewage and pores in the cartridge filter, and wherein foreign matter adsorbed on the cartridge filter is easily removed by means of washing water to be injected into
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: May 11, 2021
    Assignee: Doosan Heavy Industries Construction Co., Ltd
    Inventors: Hwan Chul Cho, Seong Ju Kim, Yang Oh Jin, Chul Woo Lee
  • Publication number: 20210125662
    Abstract: A power management circuit suitable for a memory device and a memory device is provided. The power management circuit includes a first logic circuit, a second logic circuit, and a transmission gate. The first logic circuit is configured to receive an inverted first input signal and a second input signal and generates a first output signal. The second logic circuit is configured to receive a first input signal and the second input signal and generates a second output signal. The transmission gate is configured to receive the first output signal and generates a control signal to at least one power transistor coupled between the power management circuit and the memory device. During a standby mode, the power transistor is turned on to make a first voltage equal to a predetermined voltage and during a sleep mode, the control signal is coupled to a first voltage. The predetermined voltage is greater than the first voltage.
    Type: Application
    Filed: June 22, 2020
    Publication date: April 29, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Chen Kuo, Cheng-Hung Lee, Chi-Ting Cheng, Hua-Hsin Yu, Wei-Jer Hsieh, Yu-Hao Hsu, Yang-Syu Lin, Che-Ju Yeh
  • Patent number: 10975694
    Abstract: A mine field layout method suitable for fluidized mining of coal resources is provided. A main shaft and an air shaft are provided in the mine field, the bottom of the main shaft is located in the shallow horizontal coal seam zone, and the bottom of the air shaft is located in the deep horizontal coal seam zone. The horizontal main roadways are arranged at two boundaries along the strike of the coal seam, and inclined main roadways are arranged at two boundaries along the dip direction of the coal seam. Connecting roadways are located inside the mine field and are in communication with the horizontal main roadways. In the coal mining stage, the coal resources can be converted into the fluidized energy product and/or electricity by an unmanned automatic mining machine.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: April 13, 2021
    Assignees: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, BEIJING, SHENZHEN UNIVERSITY
    Inventors: Yang Ju, Heping Xie, Yong Zhang, Yan Zhu, Feng Gao, Xiaodong Nie, Changbing Wan, Jinxin Song, Chang Lu, Hongbin Liu, Zhangyu Ren
  • Publication number: 20210003008
    Abstract: A mine field layout method suitable for fluidized mining of coal resources is provided. A main shaft and an air shaft are provided in the mine field, the bottom of the main shaft is located in the shallow horizontal coal seam zone, and the bottom of the air shaft is located in the deep horizontal coal seam zone. The horizontal main roadways are arranged at two boundaries along the strike of the coal seam, and inclined main roadways are arranged at two boundaries along the dip direction of the coal seam. Connecting roadways are located inside the mine field and are in communication with the horizontal main roadways. In the coal mining stage, the coal resources can be converted into the fluidized energy product and/or electricity by an unmanned automatic mining machine.
    Type: Application
    Filed: March 23, 2018
    Publication date: January 7, 2021
    Applicants: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, BEIJING, SHENZHEN UNIVERSITY
    Inventors: Yang JU, Heping XIE, Yong ZHANG, Yan ZHU, Feng GAO, Xiaodong NIE, Changbing WAN, Jinxin SONG, Chang LU, Hongbin LIU, Zhangyu REN
  • Patent number: 10731962
    Abstract: A transparent constraint apparatus for the normal deformation of a planar model, including rigid transparent retainer plates, a planar model, and magnetic force components. The magnetic force components are provided at edge positions of the rigid transparent retainer plates; the normal direction of the planar model is parallel to the normal direction of the two rigid transparent retainer plates, and said two retainer plates are symmetrically arranged relative to the plane of symmetry of the planar model; the magnetic force components are symmetrically arranged relative to the plane of symmetry of the planar model, mutually symmetrical magnetic force components producing mutually attractive magnetic force. The transparent constraint apparatus solves the problem of constraining the normal deformation of a planar model under planar-strain conditions during testing.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: August 4, 2020
    Assignee: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, BEIJING
    Inventors: Yang Ju, Chang Lu, Peng Liu, Zhangyu Ren, Hongbin Liu, Xiaolan Li, Changbing Wan, Xiaodong Nie, Yating Wang
  • Patent number: 10648894
    Abstract: A method for measuring the dynamic stress field evolution law of a complex heterogeneous structure, comprising: preparing a transparent photosensitive resin model of a complex heterogeneous structure by means of three-dimensional (3D) printing technology to serve as a test piece (S101); placing the test piece in a light path of a circularly polarized light dark field, performing continuous stress loading on the test piece, and recording images (S102); acquiring a plurality of continuously changing full-field stress fringe grayscale images according to videos generated by the image recording (S103); then acquiring grayscale value change sequences of pixel points at each position in the images (S104); and finally, calculating full-field fringe orders under continuous loading conditions according to the relation between the grayscale values and the fringe orders so as to calculate full-field stress values under the continuous loading conditions (S105).
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: May 12, 2020
    Assignee: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, BEIJING
    Inventors: Yang Ju, Zhangyu Ren, Li Wang, Lingtao Mao, Hongbin Liu
  • Patent number: 10564080
    Abstract: A method for measuring a stress field evolution during a CO2 fracturing process is provided, which is adopted to not only transparently display the spatial distribution and propagation morphology of internal fracturing fracture of a three-dimensional physical models, but also obtain internal three-dimensional stress phase diagram in a fracture propagation process by integration of a CT scanning, a digital reconstruction, a 3D printing, a CO2 fracturing experiment, a stress freezing and a photoelastic measurement techniques, thereby realizing transparent display and quantitative characterization of the three-dimensional stress field and its evolution law of a solid matter in the CO2 fracturing process.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: February 18, 2020
    Assignee: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, BEIJING
    Inventors: Yang Ju, Peng Liu, Hongbin Liu, Yongming Yang
  • Publication number: 20200006514
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.
    Type: Application
    Filed: September 4, 2019
    Publication date: January 2, 2020
    Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
  • Publication number: 20190368988
    Abstract: A method for measuring the dynamic stress field evolution law of a complex heterogeneous structure, comprising: preparing a transparent photosensitive resin model of a complex heterogeneous structure by means of three-dimensional (3D) printing technology to serve as a test piece (S101); placing the test piece in a light path of a circularly polarized light dark field, performing continuous stress loading on the test piece, and recording images (S102); acquiring a plurality of continuously changing full-field stress fringe grayscale images according to videos generated by the image recording (S103); then acquiring grayscale value change sequences of pixel points at each position in the images (S104); and finally, calculating full-field fringe orders under continuous loading conditions according to the relation between the grayscale values and the fringe orders so as to calculate full-field stress values under the continuous loading conditions (S105).
    Type: Application
    Filed: March 23, 2018
    Publication date: December 5, 2019
    Applicant: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, BEIJING
    Inventors: Yang JU, Zhangyu REN, Li WANG, Lingtao MAO, Hongbin LIU
  • Publication number: 20190360904
    Abstract: A method for measuring a stress field evolution during a CO2 fracturing process is provided, which is adopted to not only transparently display the spatial distribution and propagation morphology of internal fracturing fracture of a three-dimensional physical models, but also obtain internal three-dimensional stress phase diagram in a fracture propagation process by integration of a CT scanning, a digital reconstruction, a 3D printing, a CO2 fracturing experiment, a stress freezing and a photoelastic measurement techniques, thereby realizing transparent display and quantitative characterization of the three-dimensional stress field and its evolution law of a solid matter in the CO2 fracturing process.
    Type: Application
    Filed: April 17, 2018
    Publication date: November 28, 2019
    Applicant: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, BEIJING
    Inventors: Yang JU, Peng LIU, Hongbin LIU, Yongming YANG
  • Patent number: 10490643
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: November 26, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
  • Patent number: 10408721
    Abstract: A device for stress-freezing experiments during fracturing process according to the present application, in which heating and cooling treatment on a specimen under corresponding temperature control according to a preset temperature gradient and a photosensitive curve is performed by a temperature control system, to realize stress-freezing of the specimen; a pressure is applied to a specimen by a true triaxial servo loading system; and corresponding fracturing experiments are performed to the specimen by a fracturing liquid pumping system having an output end arranged in a thermo-controlled oven.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: September 10, 2019
    Assignee: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, BEIJING
    Inventors: Yang Ju, Peng Liu, Hongbin Liu, Yongming Yang
  • Publication number: 20190226958
    Abstract: A device for stress-freezing experiments during fracturing process according to the present application, in which heating and cooling treatment on a specimen under corresponding temperature control according to a preset temperature gradient and a photosensitive curve is performed by a temperature control system, to realize stress-freezing of the specimen; a pressure is applied to a specimen by a true triaxial servo loading system; and corresponding fracturing experiments are performed to the specimen by a fracturing liquid pumping system having an output end arranged in a thermo-controlled oven.
    Type: Application
    Filed: December 7, 2017
    Publication date: July 25, 2019
    Applicant: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, BEIJING
    Inventors: Yang JU, Peng LIU, Hongbin LIU, Yongming YANG
  • Patent number: 10340350
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: July 2, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Publication number: 20180331193
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Application
    Filed: July 25, 2018
    Publication date: November 15, 2018
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Publication number: 20180261675
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Application
    Filed: March 8, 2017
    Publication date: September 13, 2018
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Patent number: 10074725
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: September 11, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang