Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A fixing device for acoustic emission test sensors for rock damage testing, the device including: a fixing frame, installation bases operating to accommodate the acoustic emission test sensors, respectively, fixing assemblies operating to fix the acoustic emission test sensors in the installation bases, and installation mechanisms operating to install the installation bases on the fixing frame. The fixing frame is an integrated loop-shaped frame. Each of the installation bases is a cylinder structure which includes: a cavity corresponding to an outer edge of each of the acoustic emission test sensors, and a wall including a gap for leading out wires of each sensor. The installation mechanisms are adapted to automatically and axially adjust positions of the installation bases. The installation mechanisms are four in number. The four installation mechanisms are disposed on a same section plane of the fixing frame and every two installation mechanisms are oppositely disposed.

Abstract: A fixing device for acoustic emission test sensors for rock damage testing, the device including: a fixing frame; installation bases operating to accommodate the acoustic emission test sensors, respectively; fixing assemblies operating to fix the acoustic emission test sensors in the installation bases; and installation mechanisms operating to arrange the installation bases on the fixing frame. The fixing frame is an assembled loop-shaped frame and includes between two and four frame members and corresponding fixing structures; and the frame members are assembled into an integrated loop-shaped frame by the fixing structures. Each of the installation bases is a cylinder structure. The cylinder structure includes: a cavity corresponding to an outer edge of each of the acoustic emission test sensors, and a wall including a gap for leading out wires of each sensor.

Abstract: An adjustable fixing device for acoustic emission test sensors for rock damage testing, the device including: a fixing frame; installation bases operating to accommodate the acoustic emission test sensors, respectively; fixing assemblies operating to fix the acoustic emission test sensors in the installation bases; and installation mechanisms operating to install the installation bases on the fixing frame. The fixing frame is a rectangular frame, and at least a pair of opposite frame walls of four frame walls is provided with installation slots adapted to install the installation mechanisms. The installation slots positioned at different frame walls are in a same cross section of the rectangular frame. Each of the installation bases is a cylinder structure. The cylinder structure includes: a cavity corresponding to an outer edge of each of the acoustic emission test sensors, and a wall including a gap for leading out wires of each sensor.

Abstract: A method for fabricating a metal-insulator-metal (MIM) capacitor includes the steps of: forming a capacitor bottom metal (CBM) layer on a material layer; forming a silicon layer on the CBM layer; forming a capacitor dielectric layer on the silicon layer; and forming a capacitor top metal (CTM) layer on the capacitor dielectric layer.

Abstract: An industrial CT scanning test system. The test system includes a test base, a multi-axis motion swivel table supported on the test base, a ray generator, an image acquisition device, and a fluid pressure loading device, and further includes a control device. The fluid pressure loading device includes at least one loading cylinder, and in case of performing a scanning experiment, the at least one loading cylinder is placed on a sample stage of the multi-axis motion swivel table together with a sample, and real-time loading of loads in different directions on the sample is performed according to test requirements.

Abstract: A fluid pressure loading device applied to an industrial computed tomography scanning test system includes a body, a sample accommodating chamber and at least one fluid medium chamber being provided in the body. Each of the at least one fluid medium chamber is provided therein with a piston, the corresponding fluid medium chamber is separated into two chambers by the piston, one of the two chambers is in communication with an external hydraulic medium via oil lines provided in the body, the other of the two chambers is in communication with the sample accommodating chamber, and one end, facing towards the sample accommodating chamber, of the piston is extendable into the sample accommodating chamber. With the loading device, real-time loading of a test sample can be realized, thus improving a simulation accuracy of the system, and multi-directional loading of the sample can be realized.

Abstract: A fluid pressure loading device applied to an industrial computed tomography scanning test system includes a body, a sample accommodating chamber and at least one fluid medium chamber being provided in the body. Each of the at least one fluid medium chamber is provided therein with a piston, the corresponding fluid medium chamber is separated into two chambers by the piston, one of the two chambers is in communication with an external hydraulic medium via oil lines provided in the body, the other of the two chambers is in communication with the sample accommodating chamber, and one end, facing towards the sample accommodating chamber, of the piston is extendable into the sample accommodating chamber. With the loading device, real-time loading of a test sample can be realized, thus improving a simulation accuracy of the system, and multi-directional loading of the sample can be realized.

Abstract: An industrial CT scanning test system. The test system includes a test base, a multi-axis motion swivel table supported on the test base, a ray generator, an image acquisition device, and a fluid pressure loading device, and further includes a control device. The fluid pressure loading device includes at least one loading cylinder, and in case of performing a scanning experiment, the at least one loading cylinder is placed on a sample stage of the multi-axis motion swivel table together with a sample, and real-time loading of loads in different directions on the sample is performed according to test requirements.

Abstract: A method for modulating a work function of a semiconductor device having a metal gate structure including the following steps is provided. A first stacked gate structure and a second stacked gate structure having an identical structure are provided on a substrate. The first stacked gate structure and the second stacked gate structure respectively include a first work function metal layer of a first type. A patterned hard mask layer is formed. The patterned hard mask layer exposes the first work function metal layer of the first stacked gate structure and covers the first work function metal layer of the second stacked gate structure. A first gas treatment is performed to the first work function metal layer of the first stacked gate structure exposed by the patterned hard mask layer. A gas used in the first gas treatment includes nitrogen-containing gas or oxygen-containing gas.

Abstract: A device for fixing a rock sample, including: a lower clamp and an upper clamp; the lower clamp including a lower connector connected to a loading base at a bottom of a testing machine, a lower end cap for fixing samples, a lower chain connecting the lower connector and the lower end cap, a first spiral spring, a first central position-limit mechanism, a second central position-limit mechanism, and a first hydraulic mechanism; the upper clamp including an upper connector connected to a loading base at a top of the testing machine, an upper end cap for fixing samples, an upper chain connecting the upper connector and the upper end cap, a second spiral spring, a third central position-limit mechanism, a fourth central position-limit mechanism, and a second hydraulic mechanism.

Abstract: A semiconductor structure comprises a first wire level, a second wire level and a via level. The first wire level comprises a first conductive feature. The second wire level is disposed on the first wire level. The second wire level comprises a second conductive feature and a third conductive feature. The via level is disposed between the first wire level and the second wire level. The via level comprises a via connecting the first conductive feature and the second conductive feature. There is a first air gap between the first conductive feature and the second conductive feature. There is a second air gap between the second conductive feature and the third conductive feature. The first air gap and the second air gap are linked.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.

Abstract: A method for modulating a work function of a semiconductor device having a metal gate structure including the following steps is provided. A first stacked gate structure and a second stacked gate structure having an identical structure are provided on a substrate. The first stacked gate structure and the second stacked gate structure respectively include a first work function metal layer of a first type. A patterned hard mask layer is formed. The patterned hard mask layer exposes the first work function metal layer of the first stacked gate structure and covers the first work function metal layer of the second stacked gate structure. A first gas treatment is performed to the first work function metal layer of the first stacked gate structure exposed by the patterned hard mask layer. A gas used in the first gas treatment includes nitrogen-containing gas or oxygen-containing gas.

Abstract: The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S1) providing a substrate having a metal gate structure on a side of the substrate, (S2) forming a titanium nitride (TiN) layer on the side of the substrate, and (S3) performing a gate annealing to tune work function of the metal gate structure.

Abstract: A device for fixing a rock sample, the device including: a lower clamp and an upper clamp. The lower clamp includes: a lower connector connected to a bottom loading base, a lower end cap for fixing samples, a lower chain connecting the lower connector and the lower end cap, a first spiral spring, a first central position-limit mechanism, and a second central position-limit mechanism. The lower end cap includes: a first sample fixing groove and a first connecting segment. The upper clamp includes: an upper connector connected to a top loading base, an upper end cap for fixing the samples, an upper chain connecting with the upper connector and the upper end cap, a second spiral spring, a third central position-limit mechanism, and a fourth central position-limit mechanism. The upper end cap includes a second sample fixing groove and a second connecting segment.

Abstract: A rock sample fixing device with a three-jaw chuck for cyclic tension and compression testing including: a lower clamp and an upper clamp; the lower clamp including a lower connector connected to a loading base at a bottom of a testing machine, a lower end cap for fixing samples, a lower chain connecting the lower connector and the lower end cap, a first central position-limit mechanism, a second central position-limit mechanism, and a first hydraulic mechanism; the upper clamp including an upper connector connected to a loading base at a top of the testing machine, an upper end cap for fixing samples, an upper chain connecting the upper connector and the upper end cap, a third central position-limit mechanism, a fourth central position-limit mechanism, and a second hydraulic mechanism.

Abstract: The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S1) providing a substrate having a metal gate structure on a side of the substrate, (S2) forming a titanium nitride (TiN) layer on the side of the substrate, and (S3) performing a gate annealing to tune work function of the metal gate structure.