Patents by Inventor Yang LIN

Yang LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230053563
    Abstract: The present disclosure relates to IL2 agonists with improved therapeutic profiles.
    Type: Application
    Filed: June 17, 2022
    Publication date: February 23, 2023
    Applicant: Regeneron Pharmaceuticals, Inc.
    Inventors: Jiaxi WU, Tong ZHANG, Maria del Pilar MOLINA-PORTELA, Eric Smith, Chia-Yang LIN, Thomas Craig Meagher
  • Patent number: 11586721
    Abstract: Techniques for secure remote access of computing resources are described herein. In some examples, when a client requests to access a computing resource, a computing service may generate a first password value for the computing resource and transmit the first password value to the client. The client may then generate and transmit key data for entry of the first password value back to the computing service. The client may generate and transmit the key data on the user's behalf, without requiring any activation or selection of keys by the user. Upon receiving the key data, the computing service may enter the first password value into the computing resource, thereby allowing the client to access the computing resource. The computing service may detect the accessing of the computing resource and may change the first password value to a second password value.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: February 21, 2023
    Assignee: AMAZON TECHNOLOGIES, INC.
    Inventors: Himanshu Agrawal, Yang Lin, Chenghsien Jason Lu, Ameya Sadashiv Potadar, Prasad Renake
  • Publication number: 20230051304
    Abstract: The present disclosure relates to IL12 receptor agonists with improved therapeutic profiles.
    Type: Application
    Filed: July 18, 2022
    Publication date: February 16, 2023
    Applicant: Regeneron Pharmaceuticals, Inc.
    Inventors: Aaron CHANG, Jiaxi WU, Tong ZHANG, Nicolin BLOCH, Erica ULLMAN, Eric SMITH, Chia-Yang LIN, Samuel DAVIS
  • Publication number: 20230050816
    Abstract: A dispensing system includes a dispense material supply that contains a dispense material and a dispensing pump connected downstream from the dispense material supply. The dispensing pump includes a body made of a first electrically conductive material, one or more first electrical contacts that are disposed on the body of the dispensing pump, and one or more first connection wires that are coupled between each one of the one or more first electrical contacts and ground. The dispensing system also includes a dispensing nozzle connected downstream from the dispensing pump and includes a tube made of a second electrically conductive material, one or more second electrical contacts that are disposed on an outer surface of the tube, and one or more second connection wires that are coupled between each one of the one or more second electrical contacts and the ground.
    Type: Application
    Filed: August 12, 2021
    Publication date: February 16, 2023
    Inventors: Tzu-Yang LIN, Yu-Cheng CHANG, Cheng-Han WU, Shang-Sheng LI, Chen-Yu LIU, Chen Yi HSU
  • Patent number: 11582286
    Abstract: Techniques for providing remote access to application content are described herein. A virtual computing node may be leased to a first user requesting access to an application. On the virtual computing node, a virtualization process may spawn the application as a child process. In response to a second request, by the same user, to access an additional application, the virtual computing node may be identified. The virtualization process may spawn the second application as a child process in the process space of the first application. Data may be exchanged between the applications within the process space.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: February 14, 2023
    Assignee: AMAZON TECHNOLOGIES, INC.
    Inventors: Yang Lin, Sheshadri Supreeth Koushik, Deepak Suryanarayanan
  • Patent number: 11581217
    Abstract: A method for forming openings in an underlayer includes: forming a photoresist layer on an underlayer formed on a substrate; exposing the photoresist layer; forming photoresist patterns by developing the exposed photoresist layer, the photoresist patterns covering regions of the underlayer in which the openings are to be formed; forming a liquid layer over the photoresist patterns; after forming the liquid layer, performing a baking process so as to convert the liquid layer to an organic layer in a solid form; performing an etching back process to remove a portion of the organic layer on a level above the photoresist patterns; removing the photoresist patterns, so as to expose portions of the underlayer by the remaining portion of the organic layer; forming the openings in the underlayer by using the remaining portion of the organic layer as an etching mask; and removing the remaining portion of the organic layer.
    Type: Grant
    Filed: June 14, 2021
    Date of Patent: February 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tzu-Yang Lin, Cheng-Han Wu, Ching-Yu Chang, Chin-Hsiang Lin
  • Publication number: 20230036629
    Abstract: Disclosed herein are methods for inhibiting growth of oral pathogenic bacteria and alleviating an oral pathogenic bacteria-associated disorder using a culture of at least one lactic acid bacterial strain selected from the group consisting of Lactobacillus rhamnosus MP108 which is deposited at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 21225, and Lactobacillus paracasei MP137 which is deposited at the CGMCC under an accession number CGMCC 21224.
    Type: Application
    Filed: January 11, 2022
    Publication date: February 2, 2023
    Inventors: Hsieh-Hsun Ho, Yi-Wei Kuo, Ching-Wei Chen, Wen-Yang Lin, Jui-Fen Chen, Shu-Hui Chen
  • Publication number: 20230029828
    Abstract: Mass transfer equipment including a base stage, a first substrate stage, a second substrate stage, at least one laser head and a servo motor module is provided. The first substrate stage is adapted to drive a target substrate to move along a first direction. The second substrate stage is adapted to drive at least one micro device substrate to move along a second direction. The at least one laser head is adapted to move to a target position of the second substrate stage and emits a laser beam toward the at least one micro device substrate. At least one micro device is separated from a substrate of the at least one micro device substrate and connected with the target substrate after the irradiation of the laser beam. The servo motor module is used for driving the first substrate stage, the second substrate stage and the at least one laser head to move.
    Type: Application
    Filed: October 13, 2021
    Publication date: February 2, 2023
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yun-Li Li, Yu-Hung Lai, Tzu-Yang Lin
  • Patent number: 11570129
    Abstract: In some embodiments, an electronic device displays a plurality of content items in a messaging conversation. In some embodiments, the electronic device displays user interfaces associated with one or more content items in a messaging conversation.
    Type: Grant
    Filed: September 25, 2021
    Date of Patent: January 31, 2023
    Assignee: Apple Inc.
    Inventors: Zheng Xuan Hong, Chia Yang Lin, Chanaka G. Karunamuni, Nicole R. Ryan, Graham R. Clarke
  • Publication number: 20230014120
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a semiconductor substrate having a device substrate overlying a handle substrate and an insulator layer disposed between the device substrate and the handle substrate. A gate electrode overlies the device substrate between a drain region and a source region. A conductive via extends through the device substrate and the insulator layer to contact the handle substrate. A first isolation structure is disposed within the device substrate and comprises a first isolation segment disposed laterally between the gate electrode and the conductive via. A contact region is disposed within the device substrate between the first isolation segment and the conductive via. A conductive gate electrode directly overlies the first isolation segment and is electrically coupled to the contact region.
    Type: Application
    Filed: September 21, 2022
    Publication date: January 19, 2023
    Inventors: Hsin-Chih Chiang, Tung-Yang Lin, Ruey-Hsin Liu, Ming-Ta Lei
  • Patent number: 11549890
    Abstract: A device for imaging one dimension nanomaterials is provided. The device includes an optical microscope with a liquid immersion objective, a laser device, and a spectrometer. The laser device is configured to provide an incident light beam with a continuous spectrum. The spectrometer is configured to obtain spectral information of the one dimensional nanomaterials.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: January 10, 2023
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Wen-Yun Wu, Jing-Ying Yue, Xiao-Yang Lin, Qing-Yu Zhao, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20230000930
    Abstract: A composition, which comprises at least one of an AP-32 strain of Lactobacillus salivarius subsp. salicinius, a BLI-02 strain of Bifidobacterium longum subsp. infantis and fermentation metabolites thereof, has a physiological activity of elevating ability of brain tissue. The present invention may be used in form of a food composition or a pharmaceutical composition to elevate the ability of brain tissue.
    Type: Application
    Filed: April 22, 2022
    Publication date: January 5, 2023
    Inventors: HSIEH-HSUN HO, YI WEI KUO, KO-CHIANG HSIA, WEN-YANG LIN, JIA-HUNG LIN, CHI-HUEI LIN, CHENG-RUEI LIU, SHU-HUI CHEN
  • Publication number: 20230006105
    Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode and a conductive layer. The epitaxial structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer. The first-type semiconductor layer includes a first portion and a second portion. A bottom area of the first portion is smaller than a top area of the second portion. A thickness of the second portion is greater than 10% of a thickness of the first-type semiconductor layer. The first electrode is disposed on the epitaxial structure and located on the first portion of the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure. The conductive layer is disposed between the first electrode and the first portion, wherein an orthographic projection area of the conductive layer on the first portion is greater than or equal to 90% of an area of the first portion.
    Type: Application
    Filed: September 7, 2022
    Publication date: January 5, 2023
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Pei-Shan Wu, Yun-Syuan Chou, Hung-Hsuan Wang, Chee-Yun Low, Pai-Yang Tsai, Fei-Hong Chen, Tzu-Yang Lin, Yu-Yun Lo
  • Publication number: 20220406961
    Abstract: A micro light-emitting device has an epitaxial die having a top surface, a bottom surface and a plurality of sidewalls connected between the top surface and the bottom surface. A roughness of at least one part of the surface of at least one of the sidewalls is smaller than or equal to 10 nm, or an etch-pit density of the at least one part of the surface is smaller than 108/cm2, or a flatness tolerance of the at least one part of the surface is greater than 0.1 times a thickness of the epitaxial die. Therefore, the serious attenuation of the peak external quantum efficiency is prevented due to the sidewall damage effect after the light-emitting device is miniaturized.
    Type: Application
    Filed: November 1, 2021
    Publication date: December 22, 2022
    Inventors: Shen-Jie WANG, Yu-Yun LO, Yen-Lin LAI, Tzu-Yang LIN
  • Publication number: 20220401567
    Abstract: Disclosed herein is the use of a hyaluronan (HA) conjugate for treating cancer. Also disclosed herein is the use of a hyaluronan conjugate for treating cancer. The hyaluronan conjugate is a nimesulide-HA conjugate having a monosaccharide or one to four disaccharide units of the hyaluronic acid.
    Type: Application
    Filed: June 17, 2022
    Publication date: December 22, 2022
    Applicant: Aihol Corporation
    Inventor: Hua-Yang LIN
  • Publication number: 20220402989
    Abstract: The present disclosure relates to a fusion protein comprising an antigen-binding moiety that binds specifically to human PD-1 and an IL2 moiety, and methods of use thereof.
    Type: Application
    Filed: June 13, 2022
    Publication date: December 22, 2022
    Inventors: Jiaxi Wu, Nicolin Bloch, Tong Zhang, Chia-Yang Lin, Samuel Davis, Eric Smith, Erica Ullman
  • Patent number: 11532701
    Abstract: A semiconductor isolation structure includes a handle layer, a buried insulation layer, a semiconductor layer, a deep trench isolation structure, and a heavy doping region. The buried insulation layer is disposed on the handle layer. The semiconductor layer is disposed on the buried insulation layer and has a doping type. The semiconductor layer has a functional area in which doped regions of a semiconductor device are to be formed. The deep trench isolation structure penetrates the semiconductor layer and the buried insulation layer, and surrounds the functional area. The heavy doping region is formed in the semiconductor layer, is disposed between the functional area and the deep trench isolation structure, and is surrounded by the deep trench isolation structure. The heavy doping region has the doping type. A doping concentration of the heavy doping region is higher than that of the semiconductor layer.
    Type: Grant
    Filed: March 11, 2021
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsin-Fu Lin, Tsung-Hao Yeh, Chien-Hung Liu, Shiang-Hung Huang, Chih-Wei Hung, Tung-Yang Lin, Ruey-Hsin Liu, Chih-Chang Cheng
  • Patent number: 11532499
    Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsai-Hao Hung, Ping-Cheng Ko, Tzu-Yang Lin, Fang-Yu Liu, Cheng-Han Wu
  • Patent number: D973703
    Type: Grant
    Filed: June 5, 2021
    Date of Patent: December 27, 2022
    Assignee: Apple Inc.
    Inventors: Zheng Xuan Hong, Chia Yang Lin
  • Patent number: D978900
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: February 21, 2023
    Assignee: Apple Inc.
    Inventors: Gorm Halfdan Amand, Daniel Joseph Billett, Elizabeth Caroline Cranfill, James Nicholas Jones, Ieyuki Kawashima, Vincent M. Lane, Chia Yang Lin, Cecilia S. Zhou