Abstract: A semiconductor package includes a substrate, a semiconductor device, and a ring structure. The semiconductor device disposed on the substrate. The ring structure disposed on the substrate and surrounds the semiconductor device. The ring structure includes a first portion and a second portion. The first portion bonded to the substrate. The second portion connects to the first portion. A cavity is between the second portion and the substrate.

Abstract: An optical biometer includes a light-source module, a light-splitting module, a reference-arm, a sensing-arm and a sensing module. The light-source module emits incident-light. The light-splitting module, disposed corresponding to light-source module, divides the incident-light into reference light and sensing light. The reference-arm, disposed corresponding to light-splitting module, generates a first reflected-light according to the reference light. The sensing-arm, disposed corresponding to the light-splitting module, emits the sensing light to the eye and receives a second reflected-light from the eye. The sensing module generates a sensing result according to the first reflected-light and second reflected-light. In a first mode, the sensing light is emitted to a first position of the eye. In a second mode, the sensing light is emitted to a second position of the eye.

Abstract: A method for the surface treatment of a corrosion-resistant nickel-based alloy and the resulting surface structure of the treated alloy is disclosed. The method includes immersing a nickel-based alloy in a first neutral or alkaline solution to remove surface contaminants, followed by immersing the cleaned alloy in a second neutral or alkaline solution to form functional groups on its surface. Subsequently, a low-temperature heat treatment is performed to form a passivation layer on the surface of the nickel-based alloy. The passivation layer has a surface roughness of less than 0.04 microns and a thickness ranging from 5 nanometers to 200 nanometers. The resulting corrosion-resistant nickel-based alloy comprises a substrate made of the nickel-based alloy and a passivation layer established on at least one surface of the substrate. The nickel content of the alloy is greater than 50%, and the alloy may also contain additional metallic components such as chromium (Cr) and manganese (Mn).

Abstract: The present disclosure provides a fusion protein and the nucleic acid encoding sequence thereof, and uses of the same. The fusion protein of the present disclosure achieves the effect of treating cancer, immunoregulation and activating immune cells through various efficacy experiments.

Abstract: Disclosed are small molecule antagonists of ?4?7 integrin, and methods of using them to treat a number of specific diseases or conditions.

Abstract: A fast-transient buffer is shown. The fast-transient buffer has a flipped voltage follower coupled between the input terminal and the output terminal of the fast-transient buffer, and a first MOS transistor coupled to the flipped voltage follower as well as the output terminal of the fast-transient buffer. The first MOS transistor regulates the output voltage of the output terminal of the fast-transient buffer, in the opposite direction in comparison with an output voltage regulation direction due to the flipped voltage follower.

Abstract: In some embodiments, the present disclosure relates to a memory device including a semiconductor substrate, a first electrode disposed over the semiconductor substrate, a ferroelectric layer disposed between the first electrode and the semiconductor substrate, and a first stressor layer separating the first electrode from the ferroelectric layer. The first stressor layer has a coefficient of thermal expansion greater than that of the ferroelectric layer.

Abstract: The disclosure provides a method of treating cancer comprising administering to a subject in need thereof with a therapeutically effective amount of PF-07220060. The disclosure also provides a method of treating cancer comprising administering to a subject in need thereof with a therapeutically effective amount of PF-07220060 and an endocrine therapy agent.

Abstract: A packaging substrate that includes a first conductive layer to an Nth conductive layer stacked in sequence, N being a positive integer greater than 3; an insulating layer arranged between two adjacent conductive layers; a plurality of pads disposed on the first conductive layer, the plurality of pads being used to connect a plurality of conductive bumps at the bottom of a chip; and a plurality of conductive holes arranged one-to-one corresponding to the plurality of pads between the first conductive layer and an ath conductive layer, one end of the conductive hole is connected to the corresponding pad, and the other end extending to the ath conductive layer at most and being electrically connected to a corresponding core conductive hole.

Abstract: This disclosure relates to combination therapies for use in treating cancer, comprising a CDK2 inhibitor of Formula (I) and a selective CDK4 inhibitor of Formula (II), each as further described herein, optionally in further combination with an additional anti-cancer agent.

Abstract: The disclosure provides a plurality of particles. Each particle may include a material comprising 0.95 to 1.30 mole fraction Li, at least 0.60 and less than 1.00 mole fraction Co, up to 10,000 ppm Al, 1.90 to 2.10 mole fraction O, and up to 0.30 mole fraction M, where M is at least one element selected from B, Na, Mg, P, Ti, Ca, V, Cr, Fe, Mn, Ni, Cu, Zn, Al, Sc, Y, Ga, Zr, Ru, Mo, La, Si, Nb, Ge, In, Sn, Sb, Te, and Ce. Each particle may also include a surface composition comprising a mixture of LiF and a metal fluoride. An amount of fluorine (F) is greater than 0 and less than or equal to 5000 ppm. The metal fluoride comprises a material selected from the group consisting of AlF3, CaF2, MgF2, and LaF2. The surface composition may also include a metal oxide comprising a material selected from the group consisting of TiO2, MgO, La2O3, CaO, and Al2O3. An amount of the metal oxide is greater than 0 and less than or equal to 20000 ppm.

Abstract: An information platform for providing an earthquake early warning of a large area is disclosed. The large area includes a plurality of small districts, different sets of the plurality of small districts form different large districts according to geographical locations so as to make up the large area, and the information platform is both connected with a plurality of on-site earthquake early warning stations and the plurality of small districts through a cloud network. The plurality of on-site earthquake early warning stations are located in the large districts respectively, each of the plurality of on-site earthquake early warning stations is configured to obtain a real-time seismic longitudinal wave measurement data, obtain a real-time seismic transverse wave feature prediction value corresponding to the real-time seismic longitudinal wave measurement data, and transmit the real-time seismic transverse wave feature prediction value.

Abstract: The present disclosure relates to IL2 agonists with improved therapeutic profiles.

Abstract: A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.

Abstract: A 3D target detection method based on multimodal fusion and a depth attention mechanism includes the following steps: obtaining and preprocessing original point cloud data and original image data; inputting the preprocessed point cloud data and image data into a 3D target detection network based on multimodal fusion and the depth attention mechanism, where the 3D target detection network based on multimodal fusion and the depth attention mechanism includes a generation phase for 3D bounding box proposals and a refinement phase for 3D bounding boxes, and the network outputs parameters and classification confidence of a target bounding box; training the 3D target detection network based on multimodal fusion and the depth attention mechanism; and processing the collected lidar point cloud data and image data by using the trained detection network, and outputting 3D target information, to realize 3D target detection.

Abstract: The present disclosure relates to IL2 agonists with improved therapeutic profiles.

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an insulating layer, and a conductive layer. The active region has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The insulating layer covers a portion of the first semiconductor layer. The conductive layer covers the insulating layer and physically contacts the first semiconductor layer. The second semiconductor layer includes a first dopant and the first semiconductor layer includes a second dopant different from the first dopant. The first semiconductor layer includes a quaternary III-V semiconductor material, and the active region includes a quaternary semiconductor material, and the semiconductor device emits a radiation having a peak wavelength between 800 nm and 2000 nm.

Abstract: A device includes a substrate, an isolation structure over the substrate, and two fins extending from the substrate and above the isolation structure. Two source/drain structures are over the two fins respectively and being side by side along a first direction generally perpendicular to a lengthwise direction of the two fins from a top view. Each of the two source/drain structures has a near-vertical side, the two near-vertical sides facing each other along the first direction. A contact etch stop layer (CESL) is disposed on at least a lower portion of the near-vertical side of each of the two source/drain structures. And two contacts are disposed over the two source/drain structures, respectively, and over the CESL.

Abstract: Disclosed is a pixel circuit. A pulse width signal generator provides a pulse width signal to a control terminal of a light-emitting control switch on a drive current path of a drive current generator. A multiple lighting controller adjusts the pulse width signal provided by the pulse width signal generator according to a multiple emission control signal to allow a light-emitting element to perform multi-emission.