Abstract: An exemplary server cabinet includes two brackets defining a space therebetween for receiving servers, and two guiding fixtures respectively engaged with the two brackets. Each bracket defines a latching hole. Each guiding fixture includes a supporting member and a latching member. The supporting member includes a main plate and a supporting arm extending from the main plate towards the space. The latching member includes a resisting plate attached to the main plate and a pivot extending from the resisting plate. A plurality of protrusions extends outwards from an end of the pivot. The latching member is rotated to engage the protrusions with the corresponding bracket at a periphery of the latching hole after the end of the pivot extends through the supporting member and the latching hole of the bracket such that the main plate is sandwiched between the resisting plate and the bracket and attached to the bracket.

Abstract: A mounting bracket includes a bottom panel and two guiding rails disposed on the bottom panel. The extending direction of the two guiding rails is parallel to a sliding direction of a server. The two guiding rails is configured to guide the server to slide in the mounting bracket along the sliding direction.

Abstract: An exemplary rack enclosure includes a frame, and two opposite first brackets and two opposite second brackets mounted on the frame in parallel for securing an electronic device thereon. Each of the first brackets includes a mounting plate secured on the frame and parallel and spaced abutting sheets extending from a side of the mounting plate for supporting an end of the electronic device.

Abstract: A rack enclosure includes a cuboid frame, and two opposite first brackets and two opposite second brackets mounted on the frame for securing an electronic device thereon. Each of the first brackets includes a mounting plate secured on the frame and a guide portion distorting angularly from a side of the mounting plate along a direction away from an opposite side of the mounting plate for guiding an end of the electronic device. The guide portion includes a connecting plate connecting with the mounting plate and a guide plate distorting angularly from the connecting plate along the direction away the opposite side of the mounting plate. An angle defined between the guide plate and the connecting plate is not smaller than 90 degrees.

Abstract: A photomask and method for fabricating a photomask are generally described. In one example, a photomask includes a substrate, a multilayer (ML) stack having a peripheral region that is rendered substantially opaque for a desired wavelength of radiation by localized heating, and a first and second film applied to the ML stack, the thickness of the first and second films selected to provide desired phase shift and attenuation.

Abstract: A reflective mask may include an anti-reflective (AR) coating on an absorber layer to improve inspection contrast in an inspection system using deep ultraviolet (DUV) light. A silicon nitride (Si3N4) AR coating may be used on a chromium (Cr) or tantalum nitride (TaN) absorber layer.

Abstract: Methods to correct a non-flatness of a mask substrate are described. At least a pair of correction layers are formed on the substrate over a non-flat region of a front surface of a substrate. A thickness of the at least the pair of the correction layers is determined by a peak-to-valley distance of the non-flat region of the substrate. A portion of the correction layers over the non-flat region is heated locally. Heating changes the thickness of the portion of the correction layers and removes the non-flat region from a top surface of the correction layers without physically removing any materials. At least the pair of the correction layers is formed on a back surface of the substrate to compensate for a stress induced by the correction layers on the front surface of the substrate.

Abstract: Extreme Ultraviolet (EUV) mask protection against laser inspection damage is generally described. In one example, a photomask includes a substrate, a bilayer stack coupled with the substrate, the bilayer stack including about 30-50 bilayers wherein the bilayers include alternating films of a first material and a second material, a protective film including polycrystalline carbon coupled with the bilayer stack to protect the bilayer stack against laser inspection damage, and a capping film coupled with the protective film.

Abstract: Some embodiments of the present invention include protecting a photomask from particle defects by heating the photomask to initiate a thermophoretic force.

Abstract: A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.

Abstract: A photomask and method for fabricating a photomask are generally described. In one example, a photomask includes a substrate, a multilayer (ML) stack having a peripheral region that is rendered substantially opaque for a desired wavelength of radiation by localized heating, and a first and second film applied to the ML stack, the thickness of the first and second films selected to provide desired phase shift and attenuation.

Abstract: An extreme ultraviolet lithography (EUVL) mask blank may include a multilayer (ML) capping structure on the ML reflective coatings on the substrate. The ML capping structure may include alternating layers of a capping material, e.g., ruthenium, and a material with a lower EUV absorption coefficient, e.g., silicon. The top layer of the ML structure may be a layer of the capping material. Capping interfaces between the layers may provide constructive interference of reflected light.

Abstract: A reclaim method for an extreme ultraviolet mask blank and associated products are generally described. In this regard, according to one example embodiment, a reclaim method comprises removing an outer capping layer from a multilayer (ML) stack, the ML stack having been deposited on an inner capping layer, removing the ML stack, and depositing a new ML stack on the inner capping layer, the inner capping layer having an inner thickness that is selected to enable constructive interference between the new ML stack and a ML reflector beneath the inner capping layer.

Abstract: A reflective mask may include an anti-reflective (AR) coating on an absorber layer to improve inspection contrast in an inspection system using deep ultraviolet (DUV) light. A silicon nitride (Si3N4) AR coating may be used on a chromium (Cr) or tantalum nitride (TaN) absorber layer.

Abstract: A reflective mask may include an anti-reflective (AR) coating on an absorber layer to improve inspection contrast in an inspection system using deep ultraviolet (DUV) light. A silicon nitride (Si3N4) AR coating may be used on a chromium (Cr) or tantalum nitride (TaN) absorber layer.

Abstract: The present invention discloses a method of forming a mask including: providing a substrate; forming a multilayer mirror for EUV light over the substrate; forming a leaky absorber for the EUV light over the multilayer mirror; and patterning the leaky absorber into a first region that is strongly reflective and a second region that is weakly reflective. The present invention further discloses an EUV mask including: a substrate; a multilayer mirror located over the substrate, the multilayer mirror having a first region and a second region; and a leaky absorber located over the second region of the multiplayer mirror, the leaky absorber shifting phase of incident light by 180 degrees.

Abstract: An attenuated phase-shifting photomask (APSM) provides adjustment of attenuation from mask to mask. The APSM includes a multilayer substrate, a buffer thin film coupled to the substrate, and a top layer thin film on top of the buffer thin film. The thin films are etched with a circuit pattern to form a photomask, and are chosen to have certain thicknesses which would provide adjustment of attenuation within a specified attenuation operating range and appropriate phase shift without changing said buffer thin film and said top layer thin film.

Abstract: Methods to correct a non-flatness of a mask substrate are described. At least a pair of correction layers are formed on the substrate over a non-flat region of a front surface of a substrate. A thickness of the at least the pair of the correction layers is determined by a peak-to-valley distance of the non-flat region of the substrate. A portion of the correction layers over the non-flat region is heated locally. Heating changes the thickness of the portion of the correction layers and removes the non-flat region from a top surface of the correction layers without physically removing any materials. At least the pair of the correction layers is formed on a back surface of the substrate to compensate for a stress induced by the correction layers on the front surface of the substrate.

Abstract: A mask having a first region and a second region; the first region having a multilayer mirror over a substrate, the multilayer mirror having alternating layers of a first material and a second material, the first material having a high index of refraction, the second material having a low index of refraction; and the second region having a compound of the first material and the second material over the substrate.

Abstract: An extreme ultraviolet lithography mask may be formed of a multilayered stack covered by a spacer layer, such as silicon or boron carbide, in turn covered by a thin layer to prevent inter-diffusion, and finally covered by a capping layer of ruthenium. By optimizing the spacer layer thickness based on the capping layer, the optical properties may be improved.