Abstract: Systems and methods for wireless communications are disclosed herein. A first communication node reports at least one codeword, a number of antenna ports, a coherence capability of the antenna ports, or a full power transmission mode for the at least one uplink transmission to a second communication node. The at least one codeword is determined based on the number of antenna ports, the coherence capability, and the full power transmission mode. The at least one codeword includes at least one precoding matrix group or at least one Transmission Precoding Matrix Index (TPMI) group corresponding to the at least one precoding matrix group.

Abstract: Provided are a computing storage separation system and a data access method therefor, the method includes: acquiring a data access request; acquiring, based on a type of the data access request, an index table on a master node of the computing storage separation system or synchronization metadata information of the master node and a slave node of the master node; when the data access request is a data read request, querying an index item of a to-be-read data block in the index table, and reading the to-be-read data block based on an index item query result; and/or when the data access request is a data write request, writing a to-be-written data block into an idle space of a persistent memory on the slave node based on the synchronization metadata information.

Abstract: The present disclosure discloses a fluorine-containing resin composition, including the following as raw materials, in parts by weight: a alkali-soluble resin (A) containing a compound (I), a photoinitiator, a sensitizer, a reactive diluent, a solvent and an assistant; the structural formula of the monomer of the compound (I) is shown as follows: wherein R is selected from the group consisting of —CH?CH2, —C(CH3)?CH2, acryloyl and methacryloyl; R1, R1?, R2, and R2? are each independently selected from the group consisting of hydrogen, hydroxyl, C1-C4 alkyl and C1-C4 alkoxy; R3 is selected from the group consisting of hydrogen and C1-C6 alkyl; the A ring is selected from the group consisting of cyclohexyl and phenyl; and the B ring is selected from the group consisting of phenyl, naphthyl and anthryl.

Abstract: A fabrication method and associated integrated circuit (IC) structures and devices that include a metal-all-around contact structure coupled with an S/D region are described herein. In one example, an IC structure may include a region of a doped semiconductor material. An IC structure may include a stack of nanoribbons of a semiconductor material including first portions and second portions on either side of the region, wherein the first portions are in contact with a first side of the region and the second portions are in contact with a second side of the region. An IC structure may include a conductive material over portions of the region between the first side and the second side in a same layer as at least one of the nanoribbons of the stack.

Abstract: An IC device may have active regions and one or more isolation regions. The IC device includes gates that are in parallel. One or more semiconductor structures (e.g., fins, nanoribbons, etc.) may extend across each gate in the IC device. Some of the gates are in the active regions. The other gates are in the isolation region. A gate in an active region may be between semiconductor regions, which may function as the source region and drain region of a transistor. A gate in an isolation region may be between insulator regions. The insulator regions may be formed from the backside of the IC device. For instance, semiconductor regions may be formed in both the active regions and the isolation regions. The semiconductor regions in the regions designated to be isolation regions may be removed from the backside and filled with one or more electrical insulators.

Abstract: The present disclosure discloses a class of macrocyclic derivatives, and specifically discloses a compound shown in formula (VI), a stereoisomer thereof, and a pharmaceutically acceptable salt thereof.

Abstract: There is provided mechanisms for determining time-of-arrival of a PRACH preamble. A method is performed by a radio access network node. The radio access network node is configured for beamformed communication in a set of beams. The method comprises receiving, from a UE and at a TRP of the radio access network node, a PRACH preamble. The method comprises determining a weight factor value for the PRACH preamble. The weight factor value is dependent on beam information mapped to the PRACH preamble. The beam information identifies one of the beams in the set of beams. The method comprises determining time-of-arrival of the PRACH preamble using hypothesis testing that incorporates the weight factor value.

Abstract: An IC device may have activation regions and an isolation region between the active regions. An active region may include one or more transistors. The IC device includes gates that are in parallel. Some of the gates are in the active regions. The other gates are in the isolation region. A source or drain region may be formed between a gate in the isolation region and a gate in a transistor in the first direction. The IC device may include one or more semiconductor structures that extend across a gate in a transistor, and the semiconductor structures may constitute a channel region of the transistor. The IC device may also include one or more semiconductor structures that extend across an individual gate in the isolation region. An insulative structure may be formed between two gates in the isolation region. The insulative structure may be over the source or drain region.

Abstract: An IC device may include a support structure and a transistor built based on the support structure. The transistor may include an electrical contact over a semiconductor region in the transistor. The electrical contact may be a single structure formed by filling a single opening region with a conductive material. In an example, an end of the electrical contact may contact the semiconductor region, and another end of the electrical contact may contact a deep via. The deep via may extend through the support structure and contact a backside metal layer for delivering power or signal to the semiconductor region. In another example, an end of the electrical contact may contact the semiconductor region, and another end of the electrical contact may contact a semiconductor region in another transistor. A dielectric structure may be between the two semiconductor regions.

Abstract: The present disclosure provides a satellite communication method and apparatus based on a time division duplex (TDD) frame structure design. The solution is: determining a preset time division duplex (TDD) frame structure group corresponding to a base station, wherein the preset TDD frame structure group includes a first TDD frame structure and a second TDD frame structure generated after frame header offsetting is performed on the first TDD frame structure; in response to receiving a first message transmitted by a terminal, determining a UE set to which the terminal belongs, wherein the UE set is a first UE set or a second UE set; if the terminal belongs to the first UE set, scheduling the terminal based on the first TDD frame structure; and if the terminal belongs to the second UE set, scheduling the terminal based on the second TDD frame structure.

Abstract: Presented are systems, methods, apparatuses, or computer-readable media for scheduling performance of resource mapping of inter-cell multi transmission/reception points (TRPs) operation. A wireless communication device may receive, from a wireless communication node, an indication that a set of resources is scheduled for a first defined communication and a second defined communication. The first defined communication is associated with a first physical cell identity (PCI) value, and the second defined communication is associated with a second PCI value.

Abstract: The technology disclosed relates to streamlined analysis of security posture of a cloud environment. In particular, the disclosed technology relates to accessing permissions data and access control data for pairs of compute resources and storage resources, tracing network communication paths between the pairs of the compute resources and the storage resources based on the permissions data and the access control data, accessing sensitivity classification data for objects in the storage resources, and qualifying a subset of the pairs of the compute resources and the storage resources as vulnerable to breach attack based on an evaluation of the permissions data, the access control data, and the sensitivity classification data against at least one risk criterion. A representation of propagation of the breach attack along the network communication paths is generated, the representation identifying relationships between the subset of the pairs of the compute resources and the storage resources.

Abstract: Fabrication methods for integrated circuit (IC) structures and devices including asymmetric source and drain regions are described herein. In one example, an integrated circuit structure includes a transistor including a first region and a second region, where one of the first region and the second region is a source region of the transistor, and another of the first region and the second region is a drain region of the transistor, and where the first and second regions have different widths. In one example, the first region has a first width and the second region has a second width that is smaller than the first width.

Abstract: A fabrication method and associated integrated circuit (IC) structures and devices that include a conductive via with front-side and back-side connections with an S/D region are described herein. In one example, an IC structure includes a conductive via extending between a first layer and a second layer and an S/D region of a transistor between the first layer and the second layer, where the S/D region includes a first semiconductor material and a second semiconductor material. In one such example, the second semiconductor material may be epitaxially grown on the first semiconductor material of the S/D region from a back side of the IC structure. Conductive elements in layers over and under the conductive via may couple the conductive via with the S/D region from both the front-side and back-side S/D contact structures.

Abstract: Presented are systems and methods for improving fast beam diversity. A wireless communication device may receive N scheduling grants to schedule a plurality of repetitive transmissions of a same data block from a wireless communication node, wherein N is greater than or equal to 2. At least two of the repetitive transmissions may overlap at a time instance. The wireless communication device may communicate only one of the at least two repetitive transmissions that overlap at the time instance to the wireless communication node.

Abstract: Disclosed are a preparation method thereof, a display panel, and a display device. The drive backboard comprises: a pixel circuit disposed on a base substrate; an anode disposed on a side of the pixel circuit facing away from the base substrate and electrically connected to the pixel circuit; and a first insulating layer disposed between the base substrate and the anode; the first insulating layer is provided with a groove surrounding the pixel circuit, the anode covers the first insulating layer, and an edge of the anode extends to an inner wall of the groove.

Abstract: A method and apparatus for controlling an artificial intelligence (AI) virtual object to reduce performance overhead of a computing device. The method comprises: obtaining a virtual object community for a plurality of AI virtual objects; generating a first influence range corresponding to the virtual object community and a plurality of second influence ranges corresponding to a player virtual object, the first influence range corresponding to an activity range of the virtual object community in a virtual environment, and the second influence range being an influence range generated with the player virtual object as a center; determining a second influence range that intersects with the first influence range and that has a range size meeting a condition as a target second influence range; controlling, an activity of an AI virtual object in the plurality of AI virtual objects based on a control policy corresponding to the target second influence range.

Abstract: A glass material with low refractive index and radiation resistance, method for preparing the same, and applications thereof. The glass material consists of the following components by mole percent: 60-80% SiO2, 2-10% B2O3, 0.1-1% CeO2, 5-10% Na2O, 2-10% K2O, 1-8% Al2O3, 0-2% CaF2, 0-1% As2O3, and 1-5% alkaline earth metal oxides, wherein the alkaline earth metal oxides are selected from at least one of BaO, SrO, CaO, and MgO. The glass material has a refractive index of ?1.47, a glass transition temperature of ?550° C., a yield point temperature of ?645° C., a softening point temperature of ?748° C., and a coefficient of thermal expansion of (82-87)×10?7/° C. After exposure to a 4700 Gy dose of X-ray radiation, the transmittance decreases by ?2%. The glass material can be used as cladding glass material for the preparation of optical glass fibers and fiber panels, capable of meeting the requirements for radiation environment applications.

Abstract: Provided are a method for controlling an artificial intelligence (AI) virtual object in a virtual environment performed by a computer device. The method includes: determining an AI virtual object located within an observation range of a player virtual object; determining a current level of details (LOD) of the AI virtual object based on at least two levels of LOD determining strategies corresponding to the AI virtual object, wherein the current LOD is an LOD corresponding to a target LOD determining strategy which the AI virtual object satisfies; and controlling, based on a control strategy corresponding to the current LOD, the AI virtual object to carry out an activity in the virtual environment. By using the above method, apparatus, device, and storage medium, LOD determining standards can be enriched, and diversity of strategies for controlling the AI virtual object can be increased.