Abstract: The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.

Abstract: The embodiments of the present disclosure propose a display control circuit, a display control method thereof and a display apparatus, so that power supply to the display driving circuit is controlled to be disabled when the display driving circuit is in the sleep-in mode and is controlled to be enabled when the display driving circuit is in the wakeup mode by setting a switch circuit in the display control circuit and turning on and turning off the switch circuit.

Abstract: The present invention relates to a tyrosine kinase inhibitor and a pharmaceutical composition comprising same.

Abstract: Systems, methods, and related technologies for device classification are described. In certain aspects, traffic data associated with a device and data from an external system can be accessed. The data can be processed to determine a device classification for the device. An action can be initiated based on the classification.

Abstract: The present invention discloses a thiophene used as a uric acid transporter (URAT1) inhibitor and application of the thiophene in preparing a pharmaceutical product for treating a disease related to abnormal uric acid levels, specifically in preparing a pharmaceutical product for treating hyperuricemia and gouty arthritis. The invention specifically relates to a compound as represented by formula (I) or a pharmaceutically acceptable salt thereof.

Abstract: The present disclosure provides a rice planthopper-sensitivity gene BGIOSGA015651 and the use thereof. The applicant found a gene BGIOSGA015651 for regulating rice planthopper-resistance by studying on rice varieties BG1222 and TN1. The gene expression level of BGIOSGA015651 in the insect-resistant variety is hundreds of times or more different from that of the insect-susceptible variety. The expression of this gene can be reduced or knocked out by molecular breeding methods or genetic engineering methods, resulting in that the insect-susceptible plant can obtain high insect-resistance. The resistance level of the insect-susceptible rice variety TN1 is of level 9 before knock-out, and the resistance level thereof is significantly increased to level 0-1 after the rice planthopper-sensitivity gene BGIOSGA015651 is knocked out.

Abstract: The present disclosure discloses a camera optical lens. The camera optical lens including, in an order from an object side to an image side, a first lens, a second lens having a positive refractive power, a third lens having a negative refractive power, a fourth lens, a fifth lens, and a sixth lens. The first lens is made of plastic material, the second lens is made of glass material, the third lens is made of plastic material, the fourth lens is made of plastic material, the fifth lens is made of plastic material, and the sixth lens is made of plastic material. The camera optical lens further satisfies specific conditions.

Abstract: Techniques involve determining a first remaining lifetime of a flash device at a first time based on a warranty period, a factor of the number of writes per unit of time, and the number of executed writes for the flash device. The techniques further involve obtaining a second remaining lifetime at a second time prior to the first time, the second remaining lifetime being determined at the second time based on the warranty period, the factor of the number of writes per unit of time, and the number of executed writes. The techniques further involve determining a first lifetime decay rate based on the first and second remaining lifetimes. In addition, the techniques may determine a first predicted remaining lifetime based on the first lifetime decay rate. Accordingly, a remaining lifetime can be predicted based on the usage trend thereof, such that the predicted remaining lifetime is more accurate.

Abstract: According to an example of a method for forwarding a packet, a ESGW device decapsulates a received downstream data packet to obtain a downstream IP data packet when a destination MAC address of the downstream data packet is an MAC address of the ESGW device; determines a matching ARP entry of an IP address of a target user terminal based on the destination IP address of the downstream IP data packet to obtain a session ID of the target user terminal; determines a length field of a PPPoE header by a microcode, and obtains a pre-stored fixed-value field of the PPPoE header from a data storage area; encapsulates the downstream IP data packet into a downstream PPPoE data packet based on the session ID, the length field, and the fixed-value field, and forwards the downstream PPPoE data packet through an egress port of the matching ARP entry.

Abstract: Provided are a method and an apparatus for forwarding a packet. Based on an example of the method, in a case of receiving an upstream Q-in-Q protocol packet through a port connected to an access device, an Edge Stream Gateway (ESGW) device forwards the upstream Q-in-Q protocol packet to a Virtual Broadband Remote Access Server (vBRAS) device through a Virtual eXtensible Local Area Network (VXLAN) tunnel between the ESGW device and the vBRAS device; in a case of receiving an upstream Q-in-Q data packet through a port connected to the access device, the ESGW device removes a Q-in-Q tag of the upstream Q-in-Q data packet, determines that a destination Media Access Control (MAC) address of the upstream Ethernet data packet without the Q-in-Q tag is an MAC address of the ESGW device, and performs layer-3 forwarding based on a destination IP address of the upstream Ethernet data packet.

Abstract: Techniques involve managing a storage system. Along these lines, for each of a plurality of snapshots, a plurality of blocks referenced by the snapshot is determined. An evaluation score indicating an impact that deletion of the snapshot has on space release and data retention is determined based on at least one of: a reference count for the plurality of blocks, a size of a storage resource associated with the snapshot, and the number of blocks of the plurality of blocks that are referenced only once. At least one snapshot to be deleted is selected from the plurality of snapshots based on respective evaluation scores of the plurality of snapshots.

Abstract: An ultra-high temperature fracturing fluid, including the following components in mass percentages: 0.4 wt %-0.8 wt % of a polymer thickener, 0.015 wt %-0.02 wt % of a non-metallic crosslinking agent, 0.04 wt %-0.06 wt % of a gel breaker and the rest is water. The polymer thickener is obtained by a polymerization of acrylamide, acrylic acid, 2-acrylamido-2-methylpropanesulfonic acid, rigid monomer and cationic hydrophobic monomer in a weight ratio of 55-70:15-20:15-20:0.5-3:0.1-1.0, the polymerization temperature is 30-40° C. and the polymerization time is 8-10 hours. The fracturing fluid of the present invention can effectively solve the technical problems that traditional fracturing fluids are easily decomposed at high temperatures and affect performance.

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and a display panel are provided. The thin film transistor includes: a base substrate; and a gate electrode, a gate insulating layer, an active layer and a source/drain electrode layer which are on the base substrate. The source/drain electrode layer includes a source electrode and a drain electrode. The thin film transistor further includes a light blocking layer surrounding the active layer.

Abstract: A halogenated compound, an axially chiral isomer thereof, and an application thereof in preparing drugs for disorders closely related to aberrant levels of uric acid.

Abstract: A refrigerator may include an air duct cover plate, a closed air cavity, an evaporator, and an air guiding rib. The air duct cover plate and a liner of the refrigerator enclose the closed air cavity. The evaporator is disposed on an outer surface of the liner and in a position corresponding to a position of the closed air cavity. The air guiding rib is disposed in the closed air cavity. The air guiding rib divides the closed air cavity into an air intake region, a first supply region, and a second supply region that are sequentially in fluid communication. The first supply region is located above the air intake region and includes an upper air outlet. The second supply region is located below the first supply region and is separated from the air intake region by the air guiding rib. A lower air outlet is disposed in the second supply region.

Abstract: A fabrication method of a patterned metal film layer, including: sequentially depositing a first metal layer and a photoresist on a substrate; forming a first patterned photoresist in the photoresist retaining area; etching the first metal layer, and removing a part of the first metal layer having a first thickness and located in an edge area of the photoresist retaining area and in the photoresist removing area, to form a second metal layer; processing the first patterned photoresist to form a second patterned photoresist; etching and removing a part, which is not in contact with the second patterned photoresist, of the second metal layer on the substrate to form a patterned metal film layer.

Abstract: Semiconductor devices and fabrication methods are provided. A semiconductor device includes a substrate, a source and drain material layer formed on the substrate. The source and drain material layer contains a first trench there-through. The semiconductor device further includes a mask layer formed on the source and drain material layer containing a second trench there-through. The second trench has a cross-section area larger than the first trench and covers the first trench. The semiconductor device further includes a channel material layer conformally formed on a bottom and sidewalls of each of the first trench and the second trench and a gate structure conformally formed on the channel material layer, on the bottom and the sidewalls of each of the first trench and the second trench. The gate structure has a recess and the recess has a symmetrical step structure.

Abstract: In an embodiment, there is provided a method of manufacturing a thin-film transistor. The method includes steps of: forming a gate, a gate insulator layer and an active layer on a base substrate, wherein, the gate and the active layer are provided at upper and lower sides of the gate insulator layer, respectively, and the active layer contains impurity ions therein; and, while implementing an annealing on the active layer, applying a voltage between the active layer and the gate to generate an electrical field therebetween, a direction of the electrical field being configured such that the impurity ions move from the active layer into the gate insulator layer. Meanwhile, there are also provided a thin-film transistor, an array substrate and a display apparatus.

Abstract: The present invention relates to a compound shown in formula (II) or a pharmaceutically acceptable salt thereof and an application of the same in preparing a drug for treating a disease related to angiotensin II receptor type 2 (AT2R).

Abstract: A voice communication method, a voice communication apparatus, and a voice communication system are disclosed. The method includes: at a transmitting side, obtaining voice information; determining whether the voice information is uttered by a preset user, and transmitting the voice information to a peer device if it is determined that the voice information is uttered by the preset user, and prohibiting the transmission of the voice information otherwise; and at a receiving side, receiving voice information transmitted from a peer device; collecting a first environmental information, and determining whether the first environmental information meets a voice output condition; outputting the voice information if it is determined that the first environmental information meets the voice output condition, and prohibiting the output of the voice information otherwise.