Abstract: A method of patterning a film stack is described. The method comprises preparing a film stack on a substrate, wherein the film stack comprises a SiCOH-containing layer formed on the substrate, a silicon oxide (SiOx) layer formed on the SiCOH-containing layer, and a mask layer formed on the silicon oxide layer. A pattern is created in the mask layer. Thereafter, the pattern in the mask layer is transferred to the silicon oxide layer using an etching process, and then the mask layer is removed. The pattern in the silicon oxide layer is transferred to the SiCOH-containing layer using a dry plasma etching process formed from a process composition comprising NF3.

Abstract: A method of forming a damascene structure comprises preparing a film stack on the substrate, wherein the film stack comprises a SiCOH-containing layer formed on the substrate, a silicon oxide (SiOx) layer formed on the SiCOH-containing layer, and a first mask layer formed on the silicon oxide layer. A trench pattern is created in the first mask layer. The trench pattern in the first mask layer is transferred to the silicon oxide layer, and then the first mask layer is removed. A second mask layer is formed on the silicon oxide layer. A via pattern is formed in the second mask layer. The via pattern is transferred to the SiCOH-containing layer using a first etching process, and then the second mask layer is removed. The trench pattern is transferred to the SiCOH-containing layer using a second etching process with plasma formed from a process composition comprising NF3.

Abstract: A method for removing a damaged low dielectric constant material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process comprises a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.

Abstract: A method for removing a mask layer and reducing damage to a patterned dielectric layer is described. The method comprises disposing a substrate in a plasma processing system, wherein the substrate has a dielectric layer formed thereon and a mask layer overlying the dielectric layer. A pattern is formed in the mask layer and a feature formed in the dielectric layer corresponding to the pattern as a result of an etching process used to transfer the pattern in the mask layer to the dielectric layer. The feature includes a sidewall with a first roughness resulting from the etching process. A process gas comprising CO2 and CO is introduced into the plasma processing system, and plasma is formed. The mask layer is removed, and a second roughness, less than the first roughness, is produced by selecting a flow rate of the CO relative to a flow rate of the CO2.

Abstract: A method of patterning a film stack is described. The method comprises preparing a film stack on a substrate, wherein the film stack comprises a SiCOH-containing layer formed on the substrate, a silicon oxide (SiOx) layer formed on the SiCOH-containing layer, and a mask layer formed on the silicon oxide layer. A pattern is created in the mask layer. Thereafter, the pattern in the mask layer is transferred to the silicon oxide layer using a first etching process, and then the mask layer is removed. The pattern in the silicon oxide layer is transferred to the SiCOH-containing layer using a second etching process formed from a process composition comprising NF3. Thereafter, the silicon oxide layer is removed using a third etching process.

Abstract: A method of patterning a film stack is described. The method comprises preparing a film stack on a substrate, wherein the film stack comprises a SiCOH-containing layer formed on the substrate, a silicon oxide (SiOx) layer formed on the SiCOH-containing layer, and a mask layer formed on the silicon oxide layer. A pattern is created in the mask layer. Thereafter, the pattern in the mask layer is transferred to the silicon oxide layer using an etching process, and then the mask layer is removed. The pattern in the silicon oxide layer is transferred to the SiCOH-containing layer using a dry plasma etching process formed from a process composition comprising NF3.

Abstract: A method of forming a damascene structure comprises preparing a film stack on the substrate, wherein the film stack comprises a SiCOH-containing layer formed on the substrate, a silicon oxide (SiOx) layer formed on the SiCOH-containing layer, and a first mask layer formed on the silicon oxide layer. A trench pattern is created in the first mask layer. The trench pattern in the first mask layer is transferred to the silicon oxide layer, and then the first mask layer is removed. A second mask layer is formed on the silicon oxide layer. A via pattern is formed in the second mask layer. The via pattern is transferred to the SiCOH-containing layer using a first etching process, and then the second mask layer is removed. The trench pattern is transferred to the SiCOH-containing layer using a second etching process with plasma formed from a process composition comprising NF3.

Abstract: A method for removing a damaged low dielectric constant material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process comprises a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.