Abstract: Methods, systems, and devices for grouping power supplies for a power saving mode are described to configure a memory device with groups of internal power supplies whose voltage levels may be successively modified according to a group order signaled by an on-die timer. For example, when the memory device enters a deep sleep mode, respective voltage levels of a first group of internal power supplies may be modified to respective external power supply voltage levels at a first time, respective voltage levels of a second group of internal power supplies may be modified to respective external power supply voltage levels at a second time, and so on. When the memory device exits the deep sleep mode, the groups of internal voltage supplies may be modified from the respective external power supply voltage levels to respective operational voltage levels in a group order that is opposite to the entry group order.

Abstract: Apparatuses, duty cycle adjustment circuits, adjustment circuits, and methods for duty cycle adjustment are disclosed herein. An example duty cycle adjustment circuit may be configured to receive a signal and adjust a duty cycle of the signal a first amount using a coarse adjustment. The duty cycle adjustment circuit may further be configured, after adjusting the duty cycle of the signal a first amount, to adjust the duty cycle of the signal a second amount different from the first amount using a fine adjustment to provide a duty cycle adjusted signal.

Abstract: Apparatuses, duty cycle adjustment circuits, adjustment circuits, and methods for duty cycle adjustment are disclosed herein. An example duty cycle adjustment circuit may be configured to receive a signal and adjust a duty cycle of the signal a first amount using a coarse adjustment. The duty cycle adjustment circuit may further be configured, after adjusting the duty cycle of the signal a first amount, to adjust the duty cycle of the signal a second amount different from the first amount using a fine adjustment to provide a duty cycle adjusted signal.

Abstract: A device may include a level shifter including an at least one input and at least one output. The device may also include a logic circuit coupled to an output of the at least one output of the level shifter and configured to receive a power up reset signal. The logic circuit may be configured to isolate an output of the logic circuit from a supply voltage responsive to the power up reset signal and during at least a portion of a power up sequence. Associated circuits, systems, and methods are also disclosed.

Abstract: Provided are chemical inducers of lineage reprogramming (CiLR) which include glycogen synthase kinase inhibitors, TGF? receptor inhibitors, cyclic AMP agonists or histone acetylators. Also provided is a method of inducing lineage reprograming in a partially or completely differentiated cell of a first type into a cell with characteristics of a second and different lineage. The method includes: contacting a cell with the CiLR for a sufficient period of time to result in reprograming the cell into a modified XEN-like cell which is subsequently programmed into a cell with characteristics of a second and different lineage.

Abstract: Methods, systems, and devices for sequential voltage control for a memory device are described. A memory device may have various voltage sources that support different voltage levels used in various operations of the memory device. Voltage sources of a memory device may be disabled under some circumstances, such as when the memory device is idled, or operated in a low-power or powered-down mode, among other circumstances. In accordance with examples as disclosed herein, voltage sources of a memory device or memory die may be sequentially enabled or sequentially disabled. For example, voltage sources may be enabled in an order from voltage sources having relatively higher nominal voltages to voltage sources having relatively lower voltages, or disabled in an order from voltage sources having relatively lower nominal voltages to voltage sources having relatively higher voltages.

Abstract: A device may include a level shifter including an at least one input and at least one output. The device may also include a logic circuit coupled to an output of the at least one output of the level shifter and configured to receive a power up reset signal. The logic circuit may be configured to isolate an output of the logic circuit from a supply voltage responsive to the power up reset signal and during at least a portion of a power up sequence. Associated circuits, systems, and methods are also disclosed.

Abstract: Methods, systems, and devices for grouping power supplies for a power saving mode are described to configure a memory device with groups of internal power supplies whose voltage levels may be successively modified according to a group order signaled by an on-die timer. For example, when the memory device enters a deep sleep mode, respective voltage levels of a first group of internal power supplies may be modified to respective external power supply voltage levels at a first time, respective voltage levels of a second group of internal power supplies may be modified to respective external power supply voltage levels at a second time, and so on. When the memory device exits the deep sleep mode, the groups of internal voltage supplies may be modified from the respective external power supply voltage levels to respective operational voltage levels in a group order that is opposite to the entry group order.

Abstract: Methods, systems, and devices for grouping power supplies for a power saving mode are described to configure a memory device with groups of internal power supplies whose voltage levels may be successively modified according to a group order signaled by an on-die timer. For example, when the memory device enters a deep sleep mode, respective voltage levels of a first group of internal power supplies may be modified to respective external power supply voltage levels at a first time, respective voltage levels of a second group of internal power supplies may be modified to respective external power supply voltage levels at a second time, and so on. When the memory device exits the deep sleep mode, the groups of internal voltage supplies may be modified from the respective external power supply voltage levels to respective operational voltage levels in a group order that is opposite to the entry group order.

Abstract: Methods, systems, and devices for sequential voltage control for a memory device are described. A memory device may have various voltage sources that support different voltage levels used in various operations of the memory device. Voltage sources of a memory device may be disabled under some circumstances, such as when the memory device is idled, or operated in a low-power or powered-down mode, among other circumstances. In accordance with examples as disclosed herein, voltage sources of a memory device or memory die may be sequentially enabled or sequentially disabled. For example, voltage sources may be enabled in an order from voltage sources having relatively higher nominal voltages to voltage sources having relatively lower voltages, or disabled in an order from voltage sources having relatively lower nominal voltages to voltage sources having relatively higher voltages.

Abstract: Methods, systems, and devices for sequential voltage control for a memory device are described. A memory device may have various voltage sources that support different voltage levels used in various operations of the memory device. Voltage sources of a memory device may be disabled under some circumstances, such as when the memory device is idled, or operated in a low-power or powered-down mode, among other circumstances. In accordance with examples as disclosed herein, voltage sources of a memory device or memory die may be sequentially enabled or sequentially disabled. For example, voltage sources may be enabled in an order from voltage sources having relatively higher nominal voltages to voltage sources having relatively lower voltages, or disabled in an order from voltage sources having relatively lower nominal voltages to voltage sources having relatively higher voltages.

Abstract: Methods, systems, and devices for grouping power supplies for a power saving mode are described to configure a memory device with groups of internal power supplies whose voltage levels may be successively modified according to a group order signaled by an on-die timer. For example, when the memory device enters a deep sleep mode, respective voltage levels of a first group of internal power supplies may be modified to respective external power supply voltage levels at a first time, respective voltage levels of a second group of internal power supplies may be modified to respective external power supply voltage levels at a second time, and so on. When the memory device exits the deep sleep mode, the groups of internal voltage supplies may be modified from the respective external power supply voltage levels to respective operational voltage levels in a group order that is opposite to the entry group order.

Abstract: Methods, systems, and devices for sequential voltage control for a memory device are described. A memory device may have various voltage sources that support different voltage levels used in various operations of the memory device. Voltage sources of a memory device may be disabled under some circumstances, such as when the memory device is idled, or operated in a low-power or powered-down mode, among other circumstances. In accordance with examples as disclosed herein, voltage sources of a memory device or memory die may be sequentially enabled or sequentially disabled. For example, voltage sources may be enabled in an order from voltage sources having relatively higher nominal voltages to voltage sources having relatively lower voltages, or disabled in an order from voltage sources having relatively lower nominal voltages to voltage sources having relatively higher voltages.

Abstract: Techniques for reliable clock speed change and associated circuits and methods are disclosed. Internal voltage supplies of semiconductor devices may include oscillators and charge pump circuits. The oscillator may include at least two clock paths for generating clock signals having different clock frequencies, which can be provided to the charge pump circuit. Further, the oscillator may generate a reset signal configured to activate one clock path over the other (e.g., changing clock speeds). In some embodiments, the oscillator includes a flip-flop to align the reset signal with respect to an edge of an input clock signal supplied to the oscillator such that unintentional (undesired, unexpected) features in the output signal of the oscillator can be avoided when the oscillator changes clock speeds.

Abstract: Provided are chemical inducers of lineage reprogramming (CiLR) which include glycogen synthase kinase inhibitors, TGF? receptor inhibitors, cyclic AMP agonists or histone acetylators. Also provided is a method of inducing lineage reprograming in a partially or completely differentiated cell of a first type into a cell with characteristics of a second and different lineage. The method includes: contacting a cell with the CiLR for a sufficient period of time to result in reprograming the cell into a modified XEN-like cell which is subsequently programmed into a cell with characteristics of a second and different lineage.

Abstract: Apparatuses and methods for creating a constant DQS-DQ delay in a memory device are described. An example apparatus includes a first adjustable delay line configured to provide a delay corresponding to a loop delay of a data strobe signal pathway internal to a memory, a second adjustable delay line included in the internal data strobe signal pathway, and a timing control circuit coupled to the first and second adjustable delay lines and configured to adjust a delay of the second adjustable delay line responsive to output from the first adjustable delay line and the data strobe signal pathway.

Abstract: Apparatuses and methods for creating a constant DQS-DQ delay in a memory device are described. An example apparatus includes a first adjustable delay line configured to provide a delay corresponding to a loop delay of a data strobe signal pathway internal to a memory, a second adjustable delay line included in the internal data strobe signal pathway, and a timing control circuit coupled to the first and second adjustable delay lines and configured to adjust a delay of the second adjustable delay line responsive to output from the first adjustable delay line and the data strobe signal pathway.

Abstract: Apparatuses and methods for creating a constant DQS-DQ delay in a memory device are described. An example apparatus includes a first adjustable delay line configured to provide a delay corresponding to a loop delay of a data strobe signal pathway internal to a memory, a second adjustable delay line included in the internal data strobe signal pathway, and a timing control circuit coupled to the first and second adjustable delay lines and configured to adjust a delay of the second adjustable delay line responsive to output from the first adjustable delay line and the data strobe signal pathway.

Abstract: Apparatuses are provided for a quadra-phase clock signal generator. An example apparatus includes a first delay circuit configured to receive a first input clock signal generating a first delayed clock signal. A first phase mixer is provided communicatively coupled to the first delay circuit and configured to receive the first delayed clock signal at a first input and a second input clock signal at a second input. The first phase mixer may then generate a first output clock signal at a first output node responsive, at least in part, to mixing of the first delayed clock signal and the second input clock signal.

Abstract: Apparatuses and methods for providing an indicator of operational readiness of various circuits of a semiconductor device following power up are described in the present disclosure. An example apparatus includes a first circuit configured to receive a supply voltage and further configured to provide an active first signal responsive to the supply voltage exceeding a threshold voltage. The example apparatus further includes a second circuit coupled to the first circuit and activated by the active first signal, the second circuit configured to provide an active second signal when a third circuit is ready for operation.