Abstract: Resource optimized forwarding of classified requests to different instances of a microservice is provided. The process includes obtaining classified requests to a microservice. The classified requests are classified based on different microservice resource consumption types. Further, the method includes forwarding the classified requests to instances of the microservice with different assigned resource configurations. The forwarding is based on the different microservice resource consumption types of the classified requests.

Abstract: The present disclosure provides a memory programming method, a memory device and a memory system. The memory device comprises a plurality of memory cells. The method comprises: performing a first incremental step pulse programming on the memory cells; performing a first programmed state verification on the memory cells; and performing a second incremental step pulse programming on the memory cells, comprising: determining an incremental voltage in the second incremental step pulse programming being less than a default incremental voltage, in response to a programming temperature of the memory cells being within a preset first temperature range. Implementations of the present disclosure can improve read margin of the memory cells, reduce read errors, and reduce overall loss for the performance of the memory device.

Abstract: Embodiments of the present disclosure provide an order processing method, apparatus, device, system, medium, and product. The method includes: obtaining a target order to be processed and determining a quantity of types of goods in the target order; dividing the target order into a plurality of sub-orders according to the quantity of types of goods and assigning different workstations for the sub-orders; and sending the sub-orders for which the workstations have been assigned to the corresponding workstations for processing.

Abstract: Spontaneous and stimulated emission devices such as edge emitting laser diodes and vertical cavity surface emitting lasers operating in the visible spectrum and in the infrared spectrum between 380 mm and 1600 nm, and to the application of the light-emitting devices are disclosed. The devices are based on relaxed InGaN to provide strain-balanced epitaxial layer stacks.

Abstract: In one of the various implementations of this disclosure, a first device establishes short-range communication with a second device. The first device obtains related information of the second device based on the short-range communication. The first device sends the related information of the second device and related information of the first device to a third device. The first device then receives paging from the third device, where the paging is sent by the third device based on the related information of the second device and the related information of the first device.

Abstract: Bulk relaxed Wurtzite In-containing III-nitride layers having a smooth and substantially pit-free surface morphology and an interface region having a substantially relaxed in-plane a-lattice parameter and characterized by a single-phase gallium-polar (0001) orientation are disclosed. Methods of making the bulk relaxed Wurtzite In-containing III-nitride layers using MOCVD growth conditions are also disclosed. Semiconductor structures include epitaxial layers grown on a bulk relaxed Wurtzite In-containing III-nitride layer. The semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and display applications.

Abstract: The present disclosure provides stable lyophilized pharmaceutical compositions comprising recombinant adeno-associated virus (rAAV) particles. In certain embodiments, the compositions contain, in addition to the rAAV particles, a buffer, one or more salts, a surfactant, a bulking agent, and a sugar. The pharmaceutical compositions of the present disclosure exhibit a substantial degree of rAAV stability upon stress and storage.

Abstract: Methods and systems are provided for an electrode active material for lithium ion batteries. In one example, the electrode active material may include a lithium mixed metal oxide core and flame-retardant dusting particles partially retained within a surface of the core. In some examples, the dusting particles may have an average size of less than 20 ?m. In some examples, the amount of dusting particles by weight may be greater than 0.1% of the core particles and less than 50% of the core particles. In another example, methods are provided for manufacturing the electrode active material for use in a lithium ion battery, where lithium metal composite core particles may be mixed with the flame-retardant dusting particles in a dry process.

Abstract: The present application discloses a back contact solar cell and a photovoltaic module. An example back contact solar cell includes: a semiconductor substrate, a first doped region, a second doped region, and at least one conductive semiconductor structure. The first doped region and the second doped region are alternately spaced apart on a back surface of the semiconductor substrate. Each conductive semiconductor structure is at least partially located between the first doped region and the second doped region, and only a part of the first doped region and only a part of the second doped region are in electrical contact with at least one conductive semiconductor structure respectively. A width of a spacing region located between the first doped region and the second doped region is D1. A width of the conductive semiconductor structure along an extension direction of the spacing region is W, and 0.5D1?W?6D1.

Abstract: This present disclosure provides a back contact solar cell and a photovoltaic module. In one example, a back contact solar cell includes a silicon substrate, a P-type doped polysilicon layer, and an N-type doped polysilicon layer, where the silicon substrate includes a first side and a second side opposite to the first side. The P-type doped polysilicon layer is located in a first region on the first side of the silicon substrate, and the N-type doped polysilicon layer is located in a second region on the first side of the silicon substrate, where the first region is different from the second region. A ratio of a thickness of the P-type doped polysilicon layer to a thickness of the N-type doped polysilicon layer ranges from 1 to 2.

Abstract: A memory die includes first and second memory-region alternating stacks of memory-region insulating layers and electrically conductive layers that are laterally spaced apart from each other by a respective first portion of a retro-stepped dielectric structure overlying first stepped surfaces of the first and second memory-region alternating stacks, memory opening fill structures located the first and second memory-region alternating stacks, and a peripheral alternating stack of peripheral insulating layers and spacer material which is laterally spaced from the second memory-region alternating stack by a second portion of the retro-stepped dielectric structure overlying second stepped surfaces of the second memory-region alternating stack.

Abstract: The embodiment of this application discloses a connecting assembly and a assembled display, the connecting assembly comprises a first base provided with a first guiding structure, a second base provided with a second guiding structure, and a connecting member for locking the first base and the second base together, and the connecting member is provided with a first matching structure configured to match the first guiding structure and a second matching structure configured to match the second guiding structure.

Abstract: A battery comprises a separator. In the width direction of the separator, the separator further comprises a first region and a second region located between the positive and negative electrode plates. The protruding heights of the adhesive layers in the first and second regions are denoted as X and Y, respectively. The battery further comprises an electrolyte comprising a first solvent and a first additive each having a dielectric constant of ?10. Based on the total mass of the electrolyte, the mass percentages of the first solvent and the first additive are denoted as a and b, respectively; and 3?(a+b)/(X/Y)?60 is satisfied, such that the adhesion between the separator and the electrode plate can be significantly improved, and the infiltration problem caused by the pore blockage by the adhesive layer of the separator can be effectively solved.

Abstract: The present disclosure provides a memory programming method, a memory device and a memory system. The memory device comprises a plurality of memory cells. The method comprises: performing a first incremental step pulse programming on the memory cells; performing a first programmed state verification on the memory cells; and performing a second incremental step pulse programming on the memory cells, comprising: determining an incremental voltage in the second incremental step pulse programming being less than a default incremental voltage, in response to a programming temperature of the memory cells being within a preset first temperature range. Implementations of the present disclosure can improve read margin of the memory cells, reduce read errors, and reduce overall loss for the performance of the memory device.

Abstract: A method and device for determining pressure applied to a robot foot device by leveraging deformation parameters of cantilever devices. The method includes obtaining a deformation parameter representing the deformation state of at least one cantilever device when subjected to pressure, determining the target position on the robot foot where the pressure is applied, and calculating the corresponding target pressure. The determination process involves utilizing predefined pressure correspondence relationships that map deformation parameters to positions and pressure ratios. The invention also provides a device with a processor and memory to execute the method, a legged robot incorporating the device, and computer-readable media containing instructions for implementing the method. This innovation enables precise pressure detection and localization for enhanced robotic performance and adaptability.

Abstract: Bulk relaxed Wurtzite In-containing III-nitride layers having a smooth and substantially pit-free surface morphology and an interface region having a substantially relaxed in-plane a-lattice parameter and characterized by a single-phase gallium-polar (0001) orientation are disclosed. Methods of making the bulk relaxed Wurtzite In-containing III-nitride layers using MOCVD growth conditions are also disclosed. Semiconductor structures include epitaxial layers grown on a bulk relaxed Wurtzite In-containing III-nitride layer. The semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and display applications.

Abstract: Spontaneous and stimulated emission devices such as edge emitting laser diodes and vertical cavity surface emitting lasers operating in the visible spectrum and in the infrared spectrum between 380 mm and 1600 nm, and to the application of the light-emitting devices are disclosed. The devices are based on relaxed InGaN to provide strain-balanced epitaxial layer stacks.

Abstract: A driving control apparatus, a driving control method and a display apparatus. When a display panel is in a power-on state and it is determined that a user leaves the display panel, a backlight stop signal (VBN) is first output, and a voltage stop signal (VPN) is then output. A backlight control circuit (320) stops operating in response to the backlight stop signal. In response to the voltage stop signal, a power switching circuit (330) stops outputting a driving voltage for driving the display panel to display a picture. When determining that the user returns to the front of the display panel, a voltage start signal (VPQ) can first be output, and a backlight start signal (VBQ) is then output. The backlight control circuit starts to operate in response to the backlight start signal. The power switching circuit outputs the driving voltage in response to the voltage start signal.

Abstract: Bulk relaxed Wurtzite In-containing III-nitride layers having a smooth and substantially pit-free surface morphology and an interface region having a substantially relaxed in-plane a-lattice parameter and characterized by a single-phase gallium-polar (0001) orientation are disclosed. Methods of making the bulk relaxed Wurtzite In-containing III-nitride layers using MOCVD growth conditions are also disclosed. Semiconductor structures include epitaxial layers grown on a bulk relaxed Wurtzite In-containing III-nitride layer. The semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and display applications.