Abstract: A pixel structure includes an original light emitting diode die and a repairing light emitting diode die emitting light of a same color, and an extending conductor. The original light emitting diode die includes a first epitaxial layer, and a first electrode and a second electrode disposed at opposite sides of the first epitaxial layer. The repairing light emitting diode die includes a second epitaxial layer, and a third electrode and a fourth electrode disposed at a same side of the second epitaxial layer. The extending conductor includes a first portion, a second portion and a cut-off region. The first portion is electrically connected to the second electrode of the original light emitting diode die. The second portion is electrically connected to the third electrode of the repairing light emitting diode die. The cut-off region is located in the first portion or between the first portion and the second portion.

Abstract: A display panel including a bottom plate, a plurality of display modules, and a plurality of connection pixel packages is provided. The display modules are tiled in an array arrangement on the bottom plate. Each of the display modules includes a circuit substrate and a plurality of display pixels. The circuit substrate includes a plurality of connection electrodes. The display pixels are disposed on the circuit substrate and at least one of the display pixels has at least one second pixel unit. Each of the connection pixel packages includes at least one first pixel unit. The connection pixel packages are disposed on the connection electrodes of the adjacent circuit substrates to connect the display modules. A light emitting surface of the at least one first pixel unit and a light emitting surface of the at least one second pixel unit are coplanar.

Abstract: A pixel structure includes an original light emitting diode die and a repairing light emitting diode die emitting light of a same color, and an extending conductor. The original light emitting diode die includes a first epitaxial layer, and a first electrode and a second electrode disposed at opposite sides of the first epitaxial layer. The repairing light emitting diode die includes a second epitaxial layer, and a third electrode and a fourth electrode disposed at a same side of the second epitaxial layer. The extending conductor includes a first portion, a second portion and a cut-off region. The first portion is electrically connected to the second electrode of the original light emitting diode die. The second portion is electrically connected to the third electrode of the repairing light emitting diode die. The cut-off region is located in the first portion or between the first portion and the second portion.

Abstract: A pixel structure including a substrate, a first conductor, a second conductor, and a plurality of dies is provided. The first conductor is disposed on the substrate and includes a plurality of first body portions extending along a first direction, a plurality of first branch portions extending along a second direction, and a plurality of second branch portions extending along the first direction. The second conductor is disposed on the substrate and includes a plurality of second body portions extending along the second direction and a plurality of third branch portions extending along the first direction. The die includes two electrodes, wherein the first branch portions are connected between the first body portions and the second branch portions, and the two electrodes are respectively connected to the first branch portions and the second body portions or respectively connected to the second branch portions and the third branch portions.

Abstract: A pixel structure includes an original light emitting diode die and a repairing light emitting diode die emitting light of a same color, and an extending conductor. The original light emitting diode die includes a first epitaxial layer, and a first electrode and a second electrode disposed at opposite sides of the first epitaxial layer. The repairing light emitting diode die includes a second epitaxial layer, and a third electrode and a fourth electrode disposed at a same side of the second epitaxial layer. The extending conductor includes a first portion, a second portion and a cut-off region. The first portion is electrically connected to the second electrode of the original light emitting diode die. The second portion is electrically connected to the third electrode of the repairing light emitting diode die. The cut-off region is located in the first portion or between the first portion and the second portion.

Abstract: A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.

Abstract: A subpixel structure includes a substrate and a light emitting diode chip. The light emitting diode chip is disposed on the substrate. The light emitting diode chip has a chip area and a light emitting area, and the light emitting area is less than or equal to one tenth of the chip area.

Abstract: A pixel structure including a substrate, a first conductor, a second conductor, and a plurality of dies is provided. The first conductor is disposed on the substrate and includes a plurality of first body portions extending along a first direction, a plurality of first branch portions extending along a second direction, and a plurality of second branch portions extending along the first direction. The second conductor is disposed on the substrate and includes a plurality of second body portions extending along the second direction and a plurality of third branch portions extending along the first direction. The die includes two electrodes, wherein the first branch portions are connected between the first body portions and the second branch portions, and the two electrodes are respectively connected to the first branch portions and the second body portions or respectively connected to the second branch portions and the third branch portions.

Abstract: A pixel structure includes an original light emitting diode die and a repairing light emitting diode die emitting light of a same color, and an extending conductor. The original light emitting diode die includes a first epitaxial layer, and a first electrode and a second electrode disposed at opposite sides of the first epitaxial layer. The repairing light emitting diode die includes a second epitaxial layer, and a third electrode and a fourth electrode disposed at a same side of the second epitaxial layer. The extending conductor includes a first portion, a second portion and a cut-off region. The first portion is electrically connected to the second electrode of the original light emitting diode die. The second portion is electrically connected to the third electrode of the repairing light emitting diode die. The cut-off region is located in the first portion or between the first portion and the second portion.

Abstract: A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.

Abstract: A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.

Abstract: A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.

Abstract: A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.

Abstract: A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.

Abstract: A light emitting diode package including a circuit layer, a light-shielding layer, a plurality of light emitting diodes and an encapsulation layer is provided. A thickness of the circuit layer is less than 100 ?m. The light-shielding layer is disposed on a first surface of the circuit layer and the light-shielding layer has a plurality of apertures. The light emitting diodes are disposed on the first surface of the circuit layer and in the apertures of the light-shielding layer. The light emitting diodes are electrically connected to the circuit layer. The encapsulation layer covers the light-shielding layer. A refractive index of the encapsulation layer is 1.4 and to 1.7. The Young's modulus of the encapsulation layer is larger than or equal to 1 GPa. A thickness of the encapsulation layer is greater than thicknesses of the light emitting diodes.

Abstract: A display pixel suitable for being arranged on a carrier is provided. The display pixel includes a plurality of light-emitting diode chips. The light-emitting diode chips are disposed on and electrically connected to the carrier. Each of the light-emitting diode chips respectively serves as a sub-pixel and includes a semiconductor device layer, and the semiconductor device layer includes a display light-emitting mesa and at least one redundant light-emitting mesa. During a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light. A display panel including a plurality of the display pixels mentioned above is also provided.

Abstract: A display pixel suitable for being arranged on a carrier is provided. The display pixel includes a plurality of light-emitting diode chips. The light-emitting diode chips are disposed on and electrically connected to the carrier. Each of the light-emitting diode chips respectively serves as a sub-pixel and includes a semiconductor device layer, and the semiconductor device layer includes a display light-emitting mesa and at least one redundant light-emitting mesa. During a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light. A display panel including a plurality of the display pixels mentioned above is also provided.

Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.