Patents by Inventor Yao-Jun Tsai

Yao-Jun Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210091265
    Abstract: A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.
    Type: Application
    Filed: December 7, 2020
    Publication date: March 25, 2021
    Applicant: Industrial Technology Research Institute
    Inventors: Yih-Der Guo, Ming-Hsien Wu, Yi-Chen Lin, Yao-Jun Tsai, Yen-Hsiang Fang
  • Publication number: 20210057611
    Abstract: A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.
    Type: Application
    Filed: December 24, 2019
    Publication date: February 25, 2021
    Applicant: Industrial Technology Research Institute
    Inventors: Yih-Der Guo, Ming-Hsien Wu, Yi-Chen Lin, Yao-Jun Tsai, Yen-Hsiang Fang
  • Patent number: 10431483
    Abstract: A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: October 1, 2019
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Hsien Wu, Yih-Der Guo, Yen-Hsiang Fang, Yao-Jun Tsai, Yi-Chen Lin
  • Publication number: 20190019718
    Abstract: A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.
    Type: Application
    Filed: July 3, 2018
    Publication date: January 17, 2019
    Applicant: Industrial Technology Research Institute
    Inventors: Ming-Hsien Wu, Yih-Der Guo, Yen-Hsiang Fang, Yao-Jun Tsai, Yi-Chen Lin
  • Publication number: 20190019702
    Abstract: A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.
    Type: Application
    Filed: December 20, 2017
    Publication date: January 17, 2019
    Applicant: Industrial Technology Research Institute
    Inventors: Ming-Hsien Wu, Yih-Der Guo, Yen-Hsiang Fang, Yao-Jun Tsai, Yi-Chen Lin
  • Patent number: 10134709
    Abstract: A light emitting diode package including a circuit layer, a light-shielding layer, a plurality of light emitting diodes and an encapsulation layer is provided. A thickness of the circuit layer is less than 100 ?m. The light-shielding layer is disposed on a first surface of the circuit layer and the light-shielding layer has a plurality of apertures. The light emitting diodes are disposed on the first surface of the circuit layer and in the apertures of the light-shielding layer. The light emitting diodes are electrically connected to the circuit layer. The encapsulation layer covers the light-shielding layer. A refractive index of the encapsulation layer is 1.4 and to 1.7. The Young's modulus of the encapsulation layer is larger than or equal to 1 GPa. A thickness of the encapsulation layer is greater than thicknesses of the light emitting diodes.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: November 20, 2018
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Hsien Wu, Yao-Jun Tsai, Chia-Hsin Chao, Yen-Hsiang Fang, Yi-Chen Lin, Ching-Ya Yeh
  • Patent number: 9847047
    Abstract: A display pixel suitable for being arranged on a carrier is provided. The display pixel includes a plurality of light-emitting diode chips. The light-emitting diode chips are disposed on and electrically connected to the carrier. Each of the light-emitting diode chips respectively serves as a sub-pixel and includes a semiconductor device layer, and the semiconductor device layer includes a display light-emitting mesa and at least one redundant light-emitting mesa. During a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light. A display panel including a plurality of the display pixels mentioned above is also provided.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: December 19, 2017
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Hsien Wu, Yen-Hsiang Fang, Yao-Jun Tsai
  • Publication number: 20170162091
    Abstract: A display pixel suitable for being arranged on a carrier is provided. The display pixel includes a plurality of light-emitting diode chips. The light-emitting diode chips are disposed on and electrically connected to the carrier. Each of the light-emitting diode chips respectively serves as a sub-pixel and includes a semiconductor device layer, and the semiconductor device layer includes a display light-emitting mesa and at least one redundant light-emitting mesa. During a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light. A display panel including a plurality of the display pixels mentioned above is also provided.
    Type: Application
    Filed: December 28, 2015
    Publication date: June 8, 2017
    Inventors: Ming-Hsien Wu, Yen-Hsiang Fang, Yao-Jun Tsai
  • Patent number: 9653382
    Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: May 16, 2017
    Assignee: Industrial Technology Research Institute
    Inventors: Jui-Ying Lin, Yen-Hsiang Fang, Chia-Hsin Chao, Yao-Jun Tsai, Yi-Chen Lin
  • Patent number: 9548424
    Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: January 17, 2017
    Assignees: Industrial Technology Research Institute, Tyntek Corporation
    Inventors: Chia-Fen Hsieh, Yao-Jun Tsai, Zhi-Wei Koh, Shih-Yi Wen, Chen-Peng Hsu, Chia-Chun Yu, Yen-Chu Li, Chun-Yi Tung
  • Patent number: 9425359
    Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: August 23, 2016
    Assignees: Industrial Technology Research Institute, TYNTEK CORPORATION
    Inventors: Yao-Jun Tsai, Shih-Yi Wen, Chen-Peng Hsu, Hung-Lieh Hu, Chia-Chun Yu, Yen-Chu Li, Chun-Yi Tung
  • Patent number: 9391239
    Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: July 12, 2016
    Assignee: Industrial Technology Research Institute
    Inventors: Yao-Jun Tsai, Chen-Peng Hsu, Shih-Yi Wen, Chi-Chin Yang, Yu-Hsiang Chang, Re-Ching Lin, Hung-Lieh Hu
  • Patent number: 9252079
    Abstract: Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: February 2, 2016
    Assignee: Industrial Technology Research Institute
    Inventors: Yao-Jun Tsai, Chen-Peng Hsu, Shih-Yi Wen, Chi-Chin Yang, Hung-Lieh Hu
  • Publication number: 20160020578
    Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.
    Type: Application
    Filed: September 24, 2015
    Publication date: January 21, 2016
    Inventors: Jui-Ying Lin, Yen-Hsiang Fang, Chia-Hsin Chao, Yao-Jun Tsai, Yi-Chen Lin
  • Patent number: 9178107
    Abstract: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.
    Type: Grant
    Filed: August 3, 2011
    Date of Patent: November 3, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Yao-Jun Tsai, Chen-Peng Hsu, Kuo-Feng Lin, Hsun-Chih Liu, Hung-Lieh Hu, Chien-Jen Sun
  • Patent number: 9171779
    Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: October 27, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Jui-Ying Lin, Yen-Hsiang Fang, Chia-Hsin Chao, Yao-Jun Tsai, Yi-Chen Lin
  • Publication number: 20150108527
    Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.
    Type: Application
    Filed: December 30, 2014
    Publication date: April 23, 2015
    Inventors: Chia-Fen Hsieh, Yao-Jun Tsai, Zhi-Wei Koh, Shih-Yi Wen, Chen-Peng Hsu, Chia-Chun Yu, Yen-Chu Li, Chun-Yi Tung
  • Publication number: 20150108526
    Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.
    Type: Application
    Filed: December 30, 2014
    Publication date: April 23, 2015
    Inventors: Yao-Jun Tsai, Shih-Yi Wen, Chen-Peng Hsu, Hung-Lieh Hu, Chia-Chun Yu, Yen-Chu Li, Chun-Yi Tung
  • Publication number: 20150061084
    Abstract: Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes.
    Type: Application
    Filed: August 29, 2014
    Publication date: March 5, 2015
    Inventors: Yao-Jun Tsai, Chen-Peng Hsu, Shih-Yi Wen, Chi-Chin Yang, Hung-Lieh Hu
  • Publication number: 20150063386
    Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.
    Type: Application
    Filed: August 29, 2014
    Publication date: March 5, 2015
    Inventors: Jui-Ying Lin, Yen-Hsiang Fang, Chia-Hsin Chao, Yao-Jun Tsai, Yi-Chen Lin