Patents by Inventor Yao-Jun Tsai
Yao-Jun Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9391239Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.Type: GrantFiled: January 29, 2014Date of Patent: July 12, 2016Assignee: Industrial Technology Research InstituteInventors: Yao-Jun Tsai, Chen-Peng Hsu, Shih-Yi Wen, Chi-Chin Yang, Yu-Hsiang Chang, Re-Ching Lin, Hung-Lieh Hu
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Patent number: 9252079Abstract: Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes.Type: GrantFiled: August 29, 2014Date of Patent: February 2, 2016Assignee: Industrial Technology Research InstituteInventors: Yao-Jun Tsai, Chen-Peng Hsu, Shih-Yi Wen, Chi-Chin Yang, Hung-Lieh Hu
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Publication number: 20160020578Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.Type: ApplicationFiled: September 24, 2015Publication date: January 21, 2016Inventors: Jui-Ying Lin, Yen-Hsiang Fang, Chia-Hsin Chao, Yao-Jun Tsai, Yi-Chen Lin
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Patent number: 9178107Abstract: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.Type: GrantFiled: August 3, 2011Date of Patent: November 3, 2015Assignee: Industrial Technology Research InstituteInventors: Yao-Jun Tsai, Chen-Peng Hsu, Kuo-Feng Lin, Hsun-Chih Liu, Hung-Lieh Hu, Chien-Jen Sun
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Patent number: 9171779Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.Type: GrantFiled: August 29, 2014Date of Patent: October 27, 2015Assignee: Industrial Technology Research InstituteInventors: Jui-Ying Lin, Yen-Hsiang Fang, Chia-Hsin Chao, Yao-Jun Tsai, Yi-Chen Lin
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Publication number: 20150108526Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.Type: ApplicationFiled: December 30, 2014Publication date: April 23, 2015Inventors: Yao-Jun Tsai, Shih-Yi Wen, Chen-Peng Hsu, Hung-Lieh Hu, Chia-Chun Yu, Yen-Chu Li, Chun-Yi Tung
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Publication number: 20150108527Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.Type: ApplicationFiled: December 30, 2014Publication date: April 23, 2015Inventors: Chia-Fen Hsieh, Yao-Jun Tsai, Zhi-Wei Koh, Shih-Yi Wen, Chen-Peng Hsu, Chia-Chun Yu, Yen-Chu Li, Chun-Yi Tung
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Publication number: 20150063386Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.Type: ApplicationFiled: August 29, 2014Publication date: March 5, 2015Inventors: Jui-Ying Lin, Yen-Hsiang Fang, Chia-Hsin Chao, Yao-Jun Tsai, Yi-Chen Lin
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Publication number: 20150061084Abstract: Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes.Type: ApplicationFiled: August 29, 2014Publication date: March 5, 2015Inventors: Yao-Jun Tsai, Chen-Peng Hsu, Shih-Yi Wen, Chi-Chin Yang, Hung-Lieh Hu
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Publication number: 20140231851Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.Type: ApplicationFiled: January 29, 2014Publication date: August 21, 2014Applicant: Industrial Technology Research InstituteInventors: Yao-Jun Tsai, Chen-Peng Hsu, Shih-Yi Wen, Chi-Chin Yang, Yu-Hsiang Chang, Re-Ching Lin, Hung-Lieh Hu
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Patent number: 8759865Abstract: A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency.Type: GrantFiled: August 3, 2011Date of Patent: June 24, 2014Assignee: Industrial Technology Research InstituteInventors: Yao-Jun Tsai, Chen-Peng Hsu, Kuo-Feng Lin, Hsun-Chih Liu, Ji-Feng Chen, Hung-Lieh Hu, Chien-Jen Sun
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Patent number: 8692274Abstract: A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The optical element is disposed on the substrate and forms a sealed space with the carrier substrate, and the LED chip is disposed in the sealed space. The thermal-conductive transparent liquid fills up the sealed space.Type: GrantFiled: April 17, 2012Date of Patent: April 8, 2014Assignee: Industrial Technology Research InstituteInventors: Chao-Wei Li, Chen-Peng Hsu, Yao-Jun Tsai, Hung-Lieh Hu
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Publication number: 20130087823Abstract: A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency.Type: ApplicationFiled: August 3, 2011Publication date: April 11, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yao-Jun Tsai, Chen-Peng Hsu, Kuo-Feng Lin, Hsun-Chin Liu, Ji-Feng Chen, Hung-Lieh Hu, Chien-Jen Sun
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Patent number: 8349627Abstract: The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a LED chip are disposed on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.Type: GrantFiled: December 22, 2010Date of Patent: January 8, 2013Assignee: Industrial Technology Research InstituteInventors: Yao-Jun Tsai, Chen-Peng Hsu, Chao-Wei Li, Hung-Lieh Hu
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Publication number: 20120199862Abstract: A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The optical element is disposed on the substrate and forms a sealed space with the carrier substrate, and the LED chip is disposed in the sealed space. The thermal-conductive transparent liquid fills up the sealed space.Type: ApplicationFiled: April 17, 2012Publication date: August 9, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chao-Wei Li, Chen-Peng Hsu, Yao-Jun Tsai, Hung-Lieh Hu
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Patent number: 8193541Abstract: A light emitting diode (LED) structure and a LED packaging structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure has a first semiconductor layer, an active layer and a second semiconductor layer that are laminated on the first surface. The electrode is disposed apart from the stacked structure on the first surface. The isolation layer is disposed on the first surface to surround the stacked structure as well as cover the lateral sides of the active layer. The conductive thin film layer connects the electrode to the stacked structure and covers the stacked structure.Type: GrantFiled: December 29, 2010Date of Patent: June 5, 2012Assignee: Industrial Technology Research InstituteInventors: Yao-Jun Tsai, Chen-Peng Hsu, Hung-Lieh Hu, Ji-Feng Chen
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Patent number: 8178890Abstract: A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a highly thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The optical element is disposed on the substrate and forms a sealed space with the carrier substrate, and the LED chip is disposed in the sealed space. The highly thermal-conductive transparent liquid fills up the sealed space.Type: GrantFiled: October 8, 2009Date of Patent: May 15, 2012Assignee: Industrial Technology Research InstituteInventors: Chao-Wei Li, Chien-Peng Hsu, Yao-Jun Tsai, Hung-Lieh Hu
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Patent number: 8138518Abstract: A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a current distribution modifying layer, a first electrode and a second electrode. The active layer and the second semiconductor layer form a mesa structure and expose a part of the first semiconductor layer. The current distribution modifying layer is disposed on the second semiconductor layer. The first electrode is disposed on and electrically connected to the first semiconductor layer exposed by the mesa structure. The second electrode is disposed on the current distribution modifying layer and is electrically connected to the second semiconductor layer. The LED has superior light emitting efficiency.Type: GrantFiled: April 7, 2009Date of Patent: March 20, 2012Assignee: Industrial Technology Research InstituteInventors: Yao-Jun Tsai, Jinn-Kong Sheu, Hsi-Hsuan Yen, Hung-Lieh Hu
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Patent number: 8115218Abstract: A light emitting diode (LED) package structure includes a carrier, a first protrusion, a LED chip, and an adhesion layer. The first protrusion is disposed on the carrier and has a first opening to expose the carrier. The LED chip is disposed in the first opening on the carrier, and a ratio between a width of the first opening and a width of the LED chip is 1˜1.5. The adhesion layer is disposed between the LED chip and the carrier to bond the LED chip to the carrier.Type: GrantFiled: July 13, 2009Date of Patent: February 14, 2012Assignee: Industrial Technology Research InstituteInventors: Yao-Jun Tsai, Chen-Peng Hsu, Chao-Wei Li, Hung-Lieh Hu
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Publication number: 20120034714Abstract: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.Type: ApplicationFiled: August 3, 2011Publication date: February 9, 2012Applicant: INDUTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yao-Jun TSAI, Chen-Peng HSU, Kuo-Feng LIN, Hsun-Chih LIU, Hung-Lieh HU, Chien-Jen SUN