Abstract: Provided are a biosensor and a biomaterial detection apparatus including the same. The biomaterial detection apparatus comprises a light source to provide quantized photons; a substrate spaced apart from the light source; a single photonic sensor layer disposed on the substrate to sense the photons; and an adsorption layer disposed to cover the single photonic sensor layer, allow the photons to pass therethrough, and adsorb a biomaterial between the light source and the substrate.

Abstract: Disclosed is a space perception device which includes a transceiver unit transmitting and receiving a signal; a processing unit analyzing signals transmitted and received through the transceiver unit to search location information of an obstacle at a space; and a vibration unit providing a user with location information of an obstacle at a space in response to a control of the processing unit. The vibration unit includes a plurality of vibrators having different three-dimensional coordinates.

Abstract: Plasma brushes are provided. The plasma brush includes a nozzle, a connector connected to a first end of the nozzle, a power electrode disposed at a portion of the nozzle, and a ground electrode disposed at a second end of the nozzle opposite to the connector.

Abstract: Plasma jet assemblies are provided. A plasma jet assembly may include: a tube through which a gas flows; a power source providing a high frequency power exciting the gas in plasma state; a power electrode applying the high frequency power to the gas; and a plasma control unit removing arc discharge of a plasma gas generated in the tube by the high frequency power applied to the power electrode.

Abstract: Provided are fiber fabrication method and the fiber fabricated thereby. In this method, different monomer solutions are electrospun through nozzles whose outlets are stuck to each other and simultaneously interfacially polymerized to form a polymer fiber without a complicated process of preparing a polymer solution. Therefore, a polymer fiber can be simply prepared.

Abstract: Provided are a filter fabrication method and the filter formed thereby. In this method, a three-dimensional graphene polymer complex filter can be easily fabricated. By forming various patterns at a surface of a collector, patterns can be simply formed at a surface of a filter. This provides advantages at control of pressure difference which can be one of the very important factors necessary for designing and fabricating a filter. Since the filter includes graphene particles homogeneously combined to the polymer nanofiber, the filter can represent a superior antibiosis.

Abstract: Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.

Abstract: Provided is a chitosan spreading system using low temperature atmospheric pressure plasma.

Abstract: Provided is a dissolved oxygen measurement system. The dissolved oxygen measurement system includes a hydrogen storage device storing hydrogen, a first hydrogen fuel cell in which the hydrogen stored in the hydrogen storage device and water supplied from the outside in real time react with each other to generate first electricity energy, a water storage tank storing the water supplied from the outside, a second hydrogen fuel cell in which the water supplied from the water storage tank and the hydrogen stored in the hydrogen storage device react with each other to generate second electricity energy, and a control unit analyzing a difference between the first electricity energy and the second electricity energy.

Abstract: Provided is a method of fabricating of a nanowire porous medium and a medium formed by the method. In this method, water and organic solvent are mixed and stirred to form a large amount of bubbles, and the bubbles are used such that porosity can be formed more easily and in a more amount. Therefore, the nanowire porous medium can be fabricated more easily and simply. Also, in the nanowire porous medium according to the inventive concept, absorption capacity is increased by containing nanowires, and flexibility and durability are increased by containing a polymer.

Abstract: Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.

Abstract: A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode.

Abstract: Provided is a gas storage method of a gas storage medium having a multilayer structure in which crystalline structures are stacked to be spaced from each other, including selectively storing gas by relatively controlling a space between the crystalline structures or a lattice distance between crystals of each crystalline structure with respect to the van der Waals diameter of gas which is to be stored. According to the gas storage method, it is possible to selectively store gas.

Abstract: A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode.

Abstract: Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.

Abstract: A gas adsorption medium and an adsorption pump apparatus having the same are provided. The gas adsorption medium includes a multi-layered structure of which the layers formed of a material are spaced apart from each other, wherein an ion valence of the material is variable and the material includes extra electrons not participating in a chemical bond, and the adsorption pump apparatus includes the gas adsorption medium as described above. The gas adsorption medium can secure a large surface area by securing a space between the layers so that efficiency of the gas adsorption ability can be enhanced.

Abstract: Provided is a method for fabricating a Schottky barrier tunnel transistor (SBTT) that can fundamentally prevent the generation of a gate leakage current caused by damage of spacers formed on both sidewalls of a gate electrode. The method for fabricating a Schottky barrier tunnel transistor, which includes: a) forming a silicon pattern and a sacrificial pattern on a buried oxide layer supported by a support substrate; b) forming a source/drain region on the buried oxide layer exposed on both sides of the silicon pattern, the source/drain region being formed of a metal layer and being in contact with both sidewalls of the silicon pattern; c) removing the sacrificial pattern to expose the top surface of the silicon pattern; and d) forming a gate insulating layer and a gate electrode on the exposed silicon pattern.

Abstract: A wireless magnetic needle system for traditional oriental medicine can apply a magnetic field to a needle being used for the acupuncture process on a patient by use of a Helmholtz coil capable of applying a magnetic field to a wide space and can apply a magnetic stimulus to the patient through the needle, thereby making it possible to maximize the therapy effect of the needle. The wireless magnetic needle system includes a current generating unit and a Helmholtz coil. The Helmholtz coil includes a first coaxial coil disposed over a bed for a patient, and a second coaxial coil disposed under the bed. The current generating unit generates a current, and the Helmholtz coil creates a magnetic field by using the current generated by the current generating unit.

Abstract: Provided is a method of manufacturing a semiconductor device including a high-k dielectric thin layer formed using an interfacial reaction. The method includes the steps of: forming an oxide layer on a silicon substrate; depositing a metal layer on the oxide layer to form a metal silicate layer using an interfacial reaction between the oxide layer and the metal layer; forming a metal gate by etching the metal silicate layer and the metal layer; and forming a lightly doped drain (LDD) region and source and drain regions in the silicon substrate after forming the metal gate. In this method, a semiconductor device having high quality and performance can be manufactured by a simpler process at lower cost.

Abstract: Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).