Abstract: A boost converter circuit that includes a power supply, an inductor coupled to the power supply to receive current from the power supply, a diode coupled to receive current from the inductor and coupled to provide current to a load as an output, an inductor switch coupled to a node between the inductor and the diode for selectively switching current from the inductor anyway from the diode, and a ramp circuit. The ramp circuit is coupled to the node between the inductor and the diode, and is configured to selectively sample a voltage at the node between the inductor and the diode via a sampling switch and use the sampled signal to produce a stabilization ramp to stabilize the output.

Abstract: Phase-locked-loop based data and clock extraction comprising a phase detector that generates up and down pulses. Down pulses are maintained in width approximately equal to 1.5 unit intervals of a local sampling clock. Up pulses are allowed to vary with the phase relationship between the local sampling clock and an incoming encoded bit stream. The up pulses are allowed to vary between 1 and 2 unit intervals of the local sampling clock. The up and down pulses drive a charge pump D/A converter that generates a control voltage. The control voltage sets the frequency of the local sampling clock generated by a voltage controlled oscillator. Shift register controlled by a state machine and clocked by the local clock allows reception of complex data packets arriving by the encoded bit stream.

Abstract: Phase-locked-loop based data and clock extraction comprising a phase detector that generates up and down pulses. Down pulses are maintained in width approximately equal to 1.5 unit intervals of a local sampling clock. Up pulses are allowed to vary with the phase relationship between the local sampling clock and an incoming encoded bit stream. The up pulses are allowed to vary between 1 and 2 unit intervals of the local sampling clock. The up and down pulses drive a charge pump D/A converter that generates a control voltage. The control voltage sets the frequency of the local sampling clock generated by a voltage controlled oscillator. Shift register controlled by a state machine and clocked by the local clock allows reception of complex data packets arriving by the encoded bit stream.

Abstract: A memory chip which uses a multi-pin port as a JTAG port includes a JTAG controller, at least one internal block and a configuration unit which selectively configures four pins of the multi-pin port to communicate JTAG data to the JTAG controller or to communicate non-JTAG data to the at least one internal block. The configuration unit can be generally permanent or it can be modifiable. For example, the modifiable configuration unit can be a volatile memory (VM) configuration unit or a product term output of a programmable logic device (PLD).

Abstract: A memory chip which uses a multi-pin port as a JTAG port includes a JTAG controller, at least one internal block and a configuration unit which selectively configures four pins of the multi-pin port to communicate JTAG data to the JTAG controller or to communicate non-JTAG data to the at least one internal block. The configuration unit can be generally permanent or it can be modifiable. For example, the modifiable configuration unit can be a volatile memory (VM) configuration unit or a product term output of a programmable logic device (PLD).

Abstract: A method of controlling the operations of an on-chip memory unit includes the steps of receiving an indication of at least the ready or busy state of the memory unit and instructing the memory unit to perform the next operation once the indication is of the ready state. The step of receiving can include the repeated steps of capturing the indication and the data and address information of the previous byte provided to the memory unit and shifting the data and address information of a next byte and at least one extra bit through a shift register such that the indication is also shifted out of the shift register to a data out pin of a JTAG port. The steps of capturing and shifting, which provide double buffering, are repeated until the indication is of the ready state. Alternatively, the step of receiving occurs from a non-JTAG port of the chip to a pin on a receiving port. The present invention includes the chip which can operate according to the steps of the method.

Abstract: A row decoder with a novel word-line driver is described. Each driver includes a p-channel select transistor and first and second, significantly separated, n-channel discharging transistors, all of whose drains are connected to the word-line to be controlled. The two discharging transistors are connected in different sections, such as on opposite sides, of the word-line. The driver is controlled by a control line, a select line and a disable line. When the control line is active, it enables the select transistor to select the word-line only if the select line is active. The discharging transistors are controlled through the disable line, discharging the word-lines when the disable line is strobed. In a second embodiment, the disabling activity is segmented such that only one block of the array is discharged at a time. A third embodiment shows the segmentation within an alternate metal, virtual ground array architecture.

Abstract: A novel circuit for initiating a first read cycle when power is first applied to the memory device is disclosed. The circuit compares the ramping up of the word line voltage signal to a stable reference voltage using a comparator. Once the word line voltage reaches a predetermined level, but before it reaches its maximum value, the comparator trips. The transition of the comparator output is sensed by an address transition detection circuit which subsequently triggers a read cycle of the memory, thus creating a dummy read access without any requirement that the input address actually make a transition. A memory access time later, valid data is available at the output of the memory array. A voltage divider is used to divide the word line voltage to a suitable level for input to the comparator. The stable reference voltage serves as the source of the word line signal, besides being input to the comparator. A voltage multiplier is utilized to generate the word line signal from the voltage reference.

Abstract: A clock delay circuit for generating a delay for a sense amplifier release signal in an integrated circuit semiconductor memory device is disclosed. Rather than utilize traditional programmable capacitors that must be trimmed on a die by die basis, the novel clock delay circuit disclosed utilizes a small ROM, EPROM, EEPROM or FLASH array coupled to a bit line emulator to provide a clock delay matched to the larger main array. The size of the small memory array is on the order of 5 to 10 bit lines by 5 to 10 word lines. One cell within the small array is fixed to be continuously selected. The selected cell is coupled to the clock delay node along with the bit line emulator. The bit line emulator models the capacitance of the actual bit line used in the main array. However, the circuit is constructed so that a much larger signal is generated by the delay circuit such that sense amplifiers detect the correct signal.

Abstract: There is provided a memory array including columns of memory cells, source lines and bit lines. The memory array includes precharging apparatus which discharge selected source lines while pre-charging the array. Two embodiments of the pre-charging apparatus are provided. In both, the source lines are connected to a common bit line (CNBL) via groups of source pull-up transistors. The source lines are also connected to a source decoder. In one embodiment, the source decoder discharges selected ones of the disconnected source lines. In another embodiment, the source decoder both discharges selected ones of the disconnected source lines and connects the remaining disconnected source lines to the CNBL line.