Abstract: A processing method comprises:a first step of depositing on a substrate which is a specimen a film of any one of a semiconductor, a metal and an insulator;a second step of subjecting the surface of the film deposited in the first step, to irradiation with a beam having a given energy to produce a physical damage on the surface;a third step of subjecting the film surface on which the physical damage is produced in the second step, to selective irradiation with light to partially cause a photochemical reaction so that a mask pattern depending on the desired device structure is formed on the film surface; anda fourth step of carrying out photoetching using as a shielding member the mask pattern formed in the third step.

Abstract: An electron source emits electrons as a function of input signals. The electron source includes a substrate, a matrix of wires having m row wires and n column wires laid on the substrate with an insulator layer interposed therebetween, and a plurality of surface-conduction electron-emitting devices each having a pair of electrodes and a thin film including an electron emitting region and arranged between the electrodes. The electron-emitting devices are so arranged as to form a matrix with the electrodes connected to the respective row and column wires. The electron source further includes a selector for selecting a row of the plurality of surface-conduction electron-emitting devices, and a modulator for generating modulation signals according to input signals and applying them to the surface-conduction electron-emitting devices selected by the selector.

Abstract: An apparatus for fine processing includes a support for supporting a material to be processed, an active layer forming device for forming an active layer on the surface of the material by irradiating the material with light in a reaction gas, a latent image forming device for selectively irradiating the active layer with energy in the reaction gas to form a latent image, a shield mask forming device for removing either the latent image layer or the active layer to form a shield mask and an etching device for etching the portion other than the mask portion using the portion left unetched as the shield mask.

Abstract: An image-forming apparatus comprising an envelope formed of a plurality of members, an electron source arranged within the envelope and an image forming member for forming images by irradiation of electron beams from the electron source is manufactured by heating the plurality of members to bond them together to produce the envelope in an atmosphere containing at least a gas selected from reducing gases, inert gases and non-reducing and non-oxidizing gases or in a vacuum. The electron source comprises preferably an electron-emitting element having a thin film for electron emission arranged between a pair of electrodes.

Abstract: A photomask or a light-shielding member has a support capable of transmitting light, a light-shielding pattern which shields the light and a light absorbing member provided corresponding to the light-shielding pattern. In one aspect, the light-shielding pattern and the light absorbing member are provided on the same side of the support. In another aspect, the light-shielding pattern and the light absorbing member are provided with the support sandwiched therebetween.

Abstract: An image-forming apparatus is comprised of a substrate, an electron-emitting device which is provided on the substrate and includes an electron-emitting region between electrodes and emits electrons on application of voltage between the electrodes, and an image-forming member which forms an image on irradiation of an electron beam. A diameter S.sub.1 of the electron beam on the image-forming member in direction of application of the voltage between the electrodes is given by Equation (I):S.sub.1 =K.sub.1 .multidot.2d(V.sub.f /V.sub.a).sup.1/2 (I)where K.sub.1 is a constant and 0.8.ltoreq.K.sub.1 .ltoreq.1.0, d is a distance between the substrate and the image-forming member, V.sub.f is a voltage applied between the electrodes, and V.sub.a is a voltage applied to the image-forming member. A method for designing a diameter of an electron beam at an image-forming member face of the image-forming apparatus is comprised of a diameter S.sub.

Abstract: A process for forming an etching pattern, which includes selectively irradiating a light to a clean surface of a material to be worked by etching so as to form radicals from a photoradical forming substance in an atmosphere of the substance, forming a modified portion having an etching resistance at a photo-irradiated portion of the surface, and then subjecting an unmodified portion of the surface of the material to be worked to an etching treatment, thereby forming an etching pattern corresponding to a pattern formed by the irradiation.

Abstract: A method for fine processing includes a first step in which a first reaction gas is introduced into a reaction chamber which contains a material to be processed, followed by irradiation with light to form an active layer on the surface of the material through photochemical reaction between the material and the first reaction gas, a second step in which the active layer is selectively irradiated with energy in an atmosphere of a second reaction gas to cause a chemical change only in the irradiated portion to form a latent image layer, a third step in which either the latent image layer or active layer is removed and a fourth step in which, using the portion left unremoved in the third step as a shield mask, the portion other than the masked portion is etched.

Abstract: A process for forming an etching pattern, which includes selectively irradiating a light to a clean surface of a material to be worked by etching so as to form radicals from a photoradical forming substance in an atmosphere of the substance, forming a modified portion having an etching resistance at a photo-irradiated portion of the surface, and then subjecting an unmodified portion of the surface of the material to be worked to an etching treatment, thereby forming an etching pattern corresponding to a pattern formed by the irradiation.

Abstract: A plasma processing method characterized by placing a work to be processed on a work electrode being installed in a vacuum vessel and repeating alternately the following first step and the following second step; the first step comprising carrying out ion irradiation by applying a negative voltage to said work electrode while controlling said voltage such that the voltage of said work electrode versus the potential of said plasma be maintained constant, whereby making the energy possessed by ion to be irradiated to said work to be processed to provide an energy dispersed state as desired; and the second step comprising irradiating electrons in said plasma to said work to be processed by applying a positive voltage to said work electrode. And, an apparatus suitable for practicing said plasma processing method.

Abstract: A plasma processing apparatus includes a vacuum vessel defining a discharge chamber is provided at least a source gas supply for supplying a processing gas into the discharge chamber a magnetic field creating device, a microwave introducing device. The microwave introducing device employs a microwave radiating member having the shape of a flat plate and provided with a cut. The plasma processing apparatus is capable of uniformly processing a work with a plasma and efficiently applying a microwave only to the work. The periphery of a microwave transmission window is tapered, so that the microwave transmission window can be attached adhesively and hermetically to a microwave launcher in a simple construction, whereby the reliability of the adhesive attachment of the microwave transmission window to the microwave launcher is enhanced.

Abstract: A plasma processing apparatus includes a vacuum vessel defining a discharge chamber and is provided at least with a source gas supply for supplying a processing gas into the discharge chamber, a magnetic field creating device, and a microwave introducing device. The microwave introducing device employs a microwave radiating member having the shape of a flat plate and provided with a cut. The plasma processing apparatus is capable of uniformly processing a work with a plasma and efficiently applying a microwave only to the work. The periphery of a microwave transmission window is tapered, so that the microwave transmission window can be attached, adhesively and hermetically, to a microwave launcher in a simple construction, whereby the reliability of the adhesive attachment of the microwave transmission window to the microwave launcher is enhanced.

Abstract: A shutter device for use in an etching apparatus using charged particles, which includes at least one sheet-like electrode having an aperture for passage of the charged particles; and a voltage source for selectively applying to the electrode an electric voltage so as to establish at the electrode an electric potential higher than that of the charged particles; wherein the passage of the charged particles through the aperture of said electrode is prevented when the electric potential which is higher than that of the charged particles is established at the electrode by the voltage application by the voltage source.