Patents by Inventor Yasufumi Miyoshi

Yasufumi Miyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device, solid-state imaging device, and electric apparatus
    Patent number: 9502599
    Abstract: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: November 22, 2016
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Yasufumi Miyoshi
  • SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS
    Publication number: 20160315109
    Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
    Type: Application
    Filed: July 6, 2016
    Publication date: October 27, 2016
    Applicant: Sony Corporation
    Inventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
  • Solid-state imaging device and method of manufacturing the same, and imaging apparatus
    Patent number: 9412776
    Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: August 9, 2016
    Assignee: Sony Corporation
    Inventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
  • SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS
    Publication number: 20160064437
    Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
    Type: Application
    Filed: November 6, 2015
    Publication date: March 3, 2016
    Applicant: Sony Corporation
    Inventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
  • SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS
    Publication number: 20150171123
    Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
    Type: Application
    Filed: February 25, 2015
    Publication date: June 18, 2015
    Inventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
  • Solid-state imaging device and method of manufacturing the same, and imaging apparatus
    Patent number: 9024249
    Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: May 5, 2015
    Assignee: Sony Corporation
    Inventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
  • Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
    Patent number: 8940575
    Abstract: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: January 27, 2015
    Assignee: Sony Corporation
    Inventor: Yasufumi Miyoshi
  • SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS
    Publication number: 20140246565
    Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
    Type: Application
    Filed: May 15, 2014
    Publication date: September 4, 2014
    Applicant: SONY CORPORATION
    Inventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
  • Solid-state imaging device and method of manufacturing the same, and imaging apparatus
    Patent number: 8766156
    Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: July 1, 2014
    Assignee: Sony Corporation
    Inventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
  • Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
    Patent number: 8658457
    Abstract: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: February 25, 2014
    Assignee: Sony Corporation
    Inventor: Yasufumi Miyoshi
  • METHOD OF PRODUCING SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING ELECTRIC APPARATUS, AND ELECTRIC APPARATUS
    Publication number: 20140038341
    Abstract: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
    Type: Application
    Filed: October 11, 2013
    Publication date: February 6, 2014
    Applicant: Sony Corporation
    Inventor: Yasufumi Miyoshi
  • Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
    Patent number: 8207007
    Abstract: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
    Type: Grant
    Filed: August 18, 2008
    Date of Patent: June 26, 2012
    Assignee: Sony Corporation
    Inventor: Yasufumi Miyoshi
  • Solid-state imaging device and method of manufacturing the same, and imaging apparatus
    Publication number: 20120025059
    Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
    Type: Application
    Filed: July 20, 2011
    Publication date: February 2, 2012
    Applicant: Sony Corporation
    Inventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
  • Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
    Publication number: 20110250741
    Abstract: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
    Type: Application
    Filed: June 16, 2011
    Publication date: October 13, 2011
    Applicant: Sony Corporation
    Inventor: Yasufumi Miyoshi
  • Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
    Publication number: 20110018083
    Abstract: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
    Type: Application
    Filed: September 29, 2010
    Publication date: January 27, 2011
    Applicant: Sony Corporation
    Inventor: Yasufumi Miyoshi
  • Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
    Publication number: 20090057798
    Abstract: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
    Type: Application
    Filed: August 18, 2008
    Publication date: March 5, 2009
    Applicant: Sony Corporation
    Inventor: Yasufumi Miyoshi