Abstract: A method of manufacturing a solar cell includes: forming a conductive thin film layer on a semiconductor substrate; forming an insulating film on the conductive thin film layer; forming a conductive thin film layer exposed portion by removing a part of the insulating film; forming a plating film in the conductive thin film layer exposed portion; and removing the insulating film and the conductive thin film layer in an area not overlapping the plating film, wherein the plating film formed in the forming of a plating film is formed to cover the insulating film.

Abstract: A method of manufacturing a solar cell includes: forming a conductive thin film layer on a semiconductor substrate; forming an insulating film on the conductive thin film layer; forming a conductive thin film layer exposed portion by removing a part of the insulating film; forming a plating film in the conductive thin film layer exposed portion; and removing the insulating film and the conductive thin film layer in an area not overlapping the plating film, wherein the plating film formed in the forming of a plating film is formed to cover the insulating film.

Abstract: A photoelectric conversion device includes a crystalline semiconductor substrate having a first surface and a second surface and a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate. An interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen having a concentration of 1×1021/cm3 or greater. The first amorphous semiconductor layer includes a high-oxygen-concentration region having an oxygen concentration of 1×1020/cm3 or greater and 1×1021/cm3 or less within a range of 5 nm or less from the oxidized interface.

Abstract: A method of manufacturing a solar cell includes: forming a conductive thin film layer on a semiconductor substrate; forming an insulating film on the conductive thin film layer; forming a conductive thin film layer exposed portion by removing a part of the insulating film; forming a plating film in the conductive thin film layer exposed portion; and removing the insulating film and the conductive thin film layer in an area not overlapping the plating film, wherein the plating film formed in the forming of a plating film is formed to cover the insulating film.

Abstract: According to one example of an embodiment of the present invention, a solar cell is provided with an n-type crystalline silicon wafer; a first passivation layer, which is formed on the light receiving surface of the n-type crystalline silicon wafer, and which is configured by having, as a main component, silicon oxide, silicon carbide, or silicon nitride; an n-type crystalline silicon layer formed on the first passivation layer; a second passivation layer formed on the rear surface of the n-type crystalline silicon wafer; and a p-type amorphous silicon layer formed on the second passivation layer.

Abstract: A solar cell includes: a crystalline semiconductor substrate of a first conductivity type or a second conductivity type; an amorphous layer provided on a principal surface of the substrate; a first-conductivity-type semiconductor layer provided on the amorphous layer; a first high-conduction portion provided inside a first recess portion in the amorphous layer, the first high-conduction portion having a higher conductivity than the amorphous layer, the first high-conduction portion being in contact with the first-conductivity-type semiconductor layer; and a first electrode provided on the first-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer may be provided in a first region. The solar cell may further include a second-conductivity-type semiconductor layer provided on the amorphous layer in a second region and a second electrode provided on the second-conductivity-type semiconductor layer.

Abstract: A solar cell module includes a plurality of solar cells 1 connected to each other in a way that bus bar electrode 21 formed on surfaces of adjacent solar cells 1 are connected to each other with wiring members 41,42. The bus bar electrode 21 is embedded in the wiring member 41, and the solar cell 1 and the wiring member 41 are bonded together with a resin.

Abstract: A method of manufacturing a solar cell includes: forming a conductive thin film layer on a semiconductor substrate; forming an insulating film on the conductive thin film layer; forming a conductive thin film layer exposed portion by removing a part of the insulating film; forming a plating film in the conductive thin film layer exposed portion; and removing the insulating film and the conductive thin film layer in an area not overlapping the plating film, wherein the plating film formed in the forming of a plating film is formed to cover the insulating film.

Abstract: An embodiment of a solar cell is provided comprising a silicon substrate, on a first surface of which a texture structure including mountain portions and valley portions is formed, and an amorphous silicon layer provided on the first surface of the silicon substrate. The texture structure, in a cross section passing through the mountain portions and the valley portions, includes pairs of slant portions, each pair slanting to extend from a pair of neighboring ones of the mountain portions toward the valley portion therebetween while coming closer to each other. The valley portion located between the slant portions is in a round shape with a radius of curvature of 150 nm or smaller. The amorphous silicon layer includes an epitaxial growth area grown from the valley portion, the epitaxial growth area on the valley portion is thicker than that on a region other than the valley portion.

Abstract: A solar cell includes: a first semiconductor layer provided in a first area on a principal surface; an insulating layer provided on the first semiconductor layer in an insulating area adjacent to a second area; a second semiconductor layer provided to extend across the principal surface in the second area and the insulating layer in the insulating area; a transparent conductive layer provided on the first semiconductor layer and the second semiconductor layer; a first metal electrode provided in the first area; and a second metal electrode provided in the second area. The second metal electrode is formed to have an overhanging portion projecting to approach the first metal electrode with increasing distance from the principal surface and such that a gap from the first metal electrode is positioned in the insulating area. The transparent conductive layer is provided to avoid an isolation area aligned with the gap.

Abstract: A solar cell module includes: two solar cells, each including: a first main face and a second main face; a first electrode on the first main face, comprising a bus-bar electrode having at least one of an opening portion, notch portion, and gap portion; and a second electrode on the first or second main face having a polarity opposite to that of the first electrode; a wiring member that electrically connects the first electrode of one solar cell to the second electrode of another solar cell; and an electrically conductive connection layer that contacts the wiring member and the first main face.

Abstract: In a solar cell module, a plurality of solar cells are provided between a front surface protection member and a back surface protection member and bus bar electrodes 20 of the plurality of solar cells are electrically connected to each other by wiring members. The solar cell module includes an adhesive layer made of a resin 60 containing a plurality of conductive particles 70, the adhesive layer provided between each of the bus bar electrodes 20 and the wiring member 40. Each of the bus bar electrodes 20 and the corresponding wiring member 40 are electrically connected by the plurality of conductive particles 70. The resin 60 covers side surface of each of the bus bar electrodes 20 and configured to bond the wiring member 40 with the surface of a photoelectric conversion body 10.

Abstract: This photovoltaic device is provided with a crystalline semiconductor substrate, and a first amorphous layer formed on the main surface of the substrate. At the interface between the substrate and the first amorphous layer, electrical conductivity can be improved while suppressing an increase in recombination centers, and power generation efficiency can be improved by having a p-type dopant density profile that decreases stepwise in the film thickness direction from the vicinity of the interface with the substrate.

Abstract: A solar cell module includes: two solar cells, each including: a first main face and a second main face; a first electrode on the first main face, comprising a bus-bar electrode having at least one of an opening portion, notch portion, and gap portion; and a second electrode on the first or second main face having a polarity opposite to that of the first electrode; a wiring member that electrically connects the first electrode of one solar cell to the second electrode of another solar cell; and an electrically conductive connection layer that contacts the wiring member and the first main face.

Abstract: A solar battery module is provided with a plurality of solar battery cells which are connected to each other by connecting bus bar electrodes (21) formed on the surfaces of the adjacent solar battery cells with wiring material (41a, 41b). The bus bar electrode (21) is embedded in the wiring material (41b), and the solar battery cell (1) and the wiring material (41b) are bonded with a resin.

Abstract: A solar cell module includes: two solar cells, each including: a first main face and a second main face; a first electrode on the first main face, comprising a bus-bar electrode having at least one of an opening portion, notch portion, and gap portion; and a second electrode on the first or second main face having a polarity opposite to that of the first electrode; a wiring member that electrically connects the first electrode of one solar cell to the second electrode of another solar cell; and an electrically conductive connection layer that contacts the wiring member and the first main face.

Abstract: A solar cell module includes a plurality of solar cells 1 connected to each other in a way that bus bar electrode 21 formed on surfaces of adjacent solar cells 1 are connected to each other with wiring members 41,42. The bus bar electrode 21 is embedded in the wiring member 41, and the solar cell 1 and the wiring member 41 are bonded together with a resin.

Abstract: A photoelectric conversion device includes a crystalline semiconductor substrate having a first surface and a second surface and a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate. An interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen having a concentration of 1×1021/cm3 or greater. The first amorphous semiconductor layer includes a high-oxygen-concentration region having an oxygen concentration of 1×1020/cm3 or greater and 1×1021/cm3 or less within a range of 5 nm or less from the oxidized interface.

Abstract: A photovoltaic device may be provided having a semiconductor substrate, an i-type amorphous layer or an i-type amorphous layer formed over a front surface or a back surface of the semiconductor substrate, and a p-type amorphous layer or an n-type amorphous layer formed over the i-type amorphous layer or the i-type amorphous layer. The i-type amorphous layer or the i-type amorphous layer has an oxygen concentration profile in which a concentration is reduced in a step-shape from a region near an interface with the semiconductor substrate and along a thickness direction.

Abstract: An embodiment of a solar cell is provided comprising a silicon substrate, on a first surface of which a texture structure including mountain portions and valley portions is formed, and an amorphous silicon layer provided on the first surface of the silicon substrate. The texture structure, in a cross section passing through the mountain portions and the valley portions, includes pairs of slant portions, each pair slanting to extend from a pair of neighboring ones of the mountain portions toward the valley portion therebetween while coming closer to each other. The valley portion located between the slant portions is in a round shape with a radius of curvature of 150 nm or smaller. The amorphous silicon layer includes an epitaxial growth area grown from the valley portion, the epitaxial growth area on the valley portion is thicker than that on a region other than the valley portion.