Abstract: A non-iridescent transparent product comprising a transparent substrate, a transparent film having a refractive index of at least 1.6 and a thickness of at least 0.15 .mu.m formed on the substrate, and an underlying layer formed at the boundary between the substrate and the film, wherein the underlying layer is an absorbing layer with an extinction coefficient k being not 0.

Abstract: A magnetron cathode sputtering apparatus for providing an increased strength of the rotating magnetic field around the center area of a target when the sputtering occurs at the target, thereby reducing any dust particles that might settle on the center target area and might travel toward a wafer or each individual substrate thereon to form or deposit a thin film containing defects such as pin holes on the wafer. A magnetron cathode sputtering method uses such apparatus to form or deposit a thin film layer on the wafer, with its distribution within .+-.5% of the calculated value, and provides an improved step coverage for contact holes formed in each individual substrate of the wafer, from which irregularities can be substantially eliminated.

Abstract: Magnetron discharge type sputtering apparatus for sputtering a target with plasma. The apparatus comprises a flat target, a magnetic field application unit disposed in the vicinity of the back surface of said target and rotating means for rotating a magnetic field provided on the surface of the target by said magnetic field application unit. The magnetic field application unit is constructed such that erosion produced in the target by the sputtering tends to be deeper at an edge portion of an erosion area than at a central portion thereof. Further, there is disclosed a method of magnetron plasma discharge type sputtering of a flat target, wherein erosion produced in the target by the sputtering tends to be deeper at an edge portion of the target than at a central portion thereof.