Abstract: An electric contact of high performance that is constituted of a Cd-free Ag alloy posing no toxic problem, excels in insulating capability and can ensure stability of brazing and consumption characteristics and that can be used in a breaker or high-load electromagnetic switch; and electrical equipment including the electric contact. In particular, an electric contact comprised of an Ag alloy containing 1 to 9 mass % of Sn in which the amount of Cd as impurity is 0 or less than 0.01 mass %, the electric contact having a double layer structure composed of a surface-side first layer and an interior second layer wherein the first layer has a thickness of 10 ?m or greater and has an average hardness of 150 or higher on the microvickers scale stipulated in JIS while the second layer has an average hardness of higher than 130 on the same scale.

Abstract: A robot device, which autonomously performs actions, includes a moving unit that moves the robot device, and a target position acquiring unit that acquires position information of a target. A movement method judging unit receives an instruction for a movement from a user, and judges whether or not a destination can be designated by fixed position information. When it is judged that the destination can be designated by the fixed position information, control is performed by a position movement control unit. When it is judged that the destination cannot be designated by the fixed position information, control is performed by a target movement control unit, which acquires position information from the target position acquiring unit, to operate the moving unit.

Abstract: When a command radius r of a circular interpolation control exceeds a threshold value, a computer computes a speed limit for the circular speed at which the acceleration becomes constant. When the command radius r of the circular interpolation control is less than or equal to the threshold value, the computer 100 computes another speed limit for the circular speed at which r?3 or r?4 becomes constant, where ? is the angular frequency. The computer performs the circular interpolation control by safeguarding the circular speed from exceeding one of the speed limits in accordance with the command radius r of the circular interpolation control.

Abstract: A process for producing a polar olefin copolymer comprises copolymerizing a non-polar olefin and a polar olefin in the presence of a transition metal compound selected from Groups 4, 5, 6 and 11 of the periodic table, which is represented by the following formula (IV): wherein M? is a transition metal atom selected from Groups 4, 5, 6 and 11 of the periodic table, m is an integer of 1 to 6, A is —O—, —Si—, —Se—, —N(R6)—, n is a number satisfying a valence of M?, R1 to R4 and R6 are each a hydrogen atom, a halogen atom, a hydrocarbon group and the like, and X is a halogen atom, an oxygen atom, a hydrocarbon group and the like, and at least one compound (B) selected from the group consisting of an organometallic compound (B-1), an organoaluminum oxy-compound (B-2) and an ionic ionizing compound (B-3). Therefore, the process is capable of obtaining a polar olefin copolymer having excellent properties under mild polymerization conditions.

Abstract: A method corrects thermal displacement of a machine tool having a rotational spindle. The method includes detecting a rotation speed of the spindle. A thermal displacement amount of the spindle in the current cycle of execution of a program is estimated by using an arithmetic expression that is based at least on the spindle rotation speed and a thermal displacement amount that has been estimated in the preceding cycle of execution of the program. The estimated thermal displacement amount in the current cycle is used as a correction amount for canceling the thermal displacement of the spindle. Therefore, thermal displacement of a machine tool is corrected with no complicated processes when a spindle rotation speed changes.

Abstract: When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x?0.011 and x?450 ?m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H?70×10?4 (cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos?1(1?HCZ), where C (cm?1) is the proportionality constant when the radius of curvature of the substrate ? (cm) is expressed as 1/?=CZ.

Abstract: A process for producing a polar olefin copolymer comprises copolymerizing a non-polar olefin and a polar olefin in the presence of a transition metal compound selected from Groups 4, 5, 6 and 11 of the periodic table, which is represented by the following formula (IV): wherein M? is a transition metal atom selected from Groups 4, 5, 6 and 11 of the periodic table, m is an integer of 1 to 6, A is —O—, —Si—, —Se—, —N(R6)—, n is a number satisfying a valence of M?, R1 to R4 and R6 are each a hydrogen atom, a halogen atom, a hydrocarbon group and the like, and X is a halogen atom, an oxygen atom, a hydrocarbon group and the like, and at least one compound (B) selected from the group consisting of an organometallic compound (B-1), an organoaluminum oxy-compound (B-2) and an ionic ionizing compound (B-3). Therefore, the process is capable of obtaining a polar olefin copolymer having excellent properties under mild polymerization conditions.

Abstract: A process for polymerizing an olefin is capable of polymerizing an olefin with excellent polymerization activity, and comprises polymerizing or copolymerizing an olefin at a polymerization reaction temperature of 50 to 200° C. in the presence of a catalyst comprising a transition metal compound (A) represented by the following formula (I), a compound (B-1) having a reduction ability which reacts with the transition metal compound (A) to convert an imine structure moiety to a metal amide structure, and a compound (B-2) which reacts with the transition metal compound (A) to form an ion pair; wherein M is a transition metal atom of Groups 3 to 11 of the periodic table; m is an integer of 1 to 6; Y is O, S, Se, or —C(R7)—; R1 to R7 may be the same or different, and are each a hydrogen atom, a halogen atom, a hydrocarbon group, an oxgen-containing group, a nitrogen-containing group and the like; n is a number satisfying a valence of M; and X is a hydrogen atom, a halogen atom, a hydrocarbon group and the like.

Abstract: When a rotary table rotates, a main control section of a multi-tasking machine detects vibration of the rotary table on which a workpiece is mounted based on fluctuation of a position droop computed by a servo system. The main control section computes the arrangement position (the eccentricity amount and the eccentricity angle) of the workpiece with respect to the rotary table based on, for example, the detected vibration, the weight of the workpiece, and the rotation speed of the rotary table. The main control section computes the attachment position of a balancer with respect to the rotary table based on the computed arrangement position of the workpiece. Therefore, a suitable attachment position of a vibration suppressing balancer with respect to the rotary table is easily obtained.

Abstract: In a communication apparatus, effective automatic power control (APC) is realized.

Abstract: When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x?0.011 and x?450 ?m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H?70×10?4 (cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos?1(1?HCZ), where C (cm?1) is the proportionality constant when the radius of curvature of the substrate ? (cm) is expressed as 1/?=CZ.

Abstract: The present invention relates to a method and apparatus for treating an exhaust gas containing a fluorine compound. A method according to the present invention includes heating the exhaust gas in the presence of O2, and then adding H2O to the exhaust gas to decompose or oxidize the fluorine compound. An apparatus according to the present invention includes a heating section (30) for heating the exhaust gas, an exhaust gas supply (11) for supplying the exhaust gas to the heating section (30), an H2O adding section (40) located just downstream of the heating section (30) for adding H2O to the exhaust gas by supplying H2O or H2 to the exhaust gas; and an acid gas removal section (13) for removing an acid gas produced by a reaction between the exhaust gas and H2O.

Abstract: When a command radius r of a circular interpolation control exceeds a threshold value, a computer computes a speed limit for the circular speed at which the acceleration becomes constant. When the command radius r of the circular interpolation control is less than or equal to the threshold value, the computer 100 computes another speed limit for the circular speed at which r?3 or r?4 becomes constant, where ? is the angular frequency. The computer performs the circular interpolation control by safeguarding the circular speed from exceeding one of the speed limits in accordance with the command radius r of the circular interpolation control.

Abstract: A novel olefin polymerization catalyst is provided which comprises (A) a transition metal compound or lanthanoid compound containing two or more atoms selected from the group consisting of boron, nitrogen, oxygen, phosphorus, sulfur, and selenium; and (B) a Lewis acid. A process for producing an olefin polymer is also provided. The catalyst has a high olefin polymerization activity without a combined use of an expensive organoaluminum oxy-compound or organoboron compound, and can maintain the high activity for a long polymerization time.

Abstract: A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage.

Abstract: A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage.

Abstract: A machine tool moves a driven member by use of a servomotor. A position control device controls the position of the driven member in accordance with full closed loop control. The position control device computes an integrated feedback value g in correspondence with a function F (VM, PM, Vm, Pm) in which four state amounts, motor speed VM, motor position PM, driven member speed Vm, and driven member position Pm are independent variables. The thrust instruction ?*, which is inputted to the servomotor, is compensated with the integrated feedback value g. The servomotor is thus optimally driven and controlled in accordance with full closed loop control.

Abstract: When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x≦0.011 and x≧450 &mgr;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H≦70×10−4 (cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos−1(1−HCZ), where C (cm−1) is the proportionality constant when the radius of curvature of the substrate &rgr; (cm) is expressed as 1/&rgr;=CZ.

Abstract: An apparatus for treating an exhaust gas has a pre-treatment section (1) for removing at least one of a powdery component, a water-soluble component and a hydrolytic component from the exhaust gas containing at least one of a fluorine compound and CO, and a heating oxidative decomposing section (2) for performing heating oxidative decomposition of the at least one of the fluorine compound and CO to detoxify the exhaust gas. The apparatus has a post-treatment section (4) for post-treating an acid gas such as HF which has been produced by the heating oxidative decomposition.

Abstract: A process for manufacturing a hollow silicon structure is simplifie. A device for manufacturing the silicon structure is a device that manufactures the hollow silicon structure by processing a silicon structure, the silicon structure consisting of a silicon oxide layer formed on a silicon substrate, the silicon oxide layer being covered by a silicon layer. The device is provided with first gas supply members 20 and 21, second gas supply members 30 and 31, an etching reaction chamber 10, selective connecting means 23 to 26, 34 and 35, and a gas discharging means 42. The first gas etches silicon. The second gas etches silicon oxide and barely etches silicon. The selective connecting means 23 to 26, 34 and 35 selectively connect the etching reaction chamber 10 with either the first gas supply members 20 and 21 or the second gas supply members 30 and 31. The gas discharging means 42 discharges gas from the etching reaction chamber 10.