Abstract: A ceramic plate having a flat plate shape includes a cut-out portion that is cut out inwardly from a peripheral end surface. An end surface defining the cut-put portion inclines in a thickness direction of the ceramic plate.

Abstract: The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10?6 ?·cm or more and 1×10?3 ?·cm or less, and the tensile storage modulus of the thermosetting type die bond film at ?20° C. before thermal curing is 0.1 to 10 GPa.

Abstract: The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10?6 ?·cm or more and 1×10?3 ?·cm or less, and the tensile storage modulus of the thermosetting type die bond film at ?20° C. before thermal curing is 0.1 to 10 GPa.

Abstract: A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 ?m or less and a maximum height Rz of 1.0 ?m or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.

Abstract: A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 ?m or less and a maximum height Rz of 1.0 ?m or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.

Abstract: The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10?6 ?·cm or more and 1×10?3 ?·cm or less, and the tensile storage modulus of the thermosetting type die bond film at ?20° C. before thermal curing is 0.1 to 10 GPa.

Abstract: The present invention provides a film for a semiconductor device that is capable of suppressing the generation of a transfer mark on an adhesive film when a film for a semiconductor device, in which an adhesive film with a dicing sheet obtained by laminating an adhesive film onto a dicing film is laminated onto a cover film leaving a prescribed spacing, is wound up into a roll. It is a film for a semiconductor device in which an adhesive film with a dicing sheet obtained by laminating an adhesive film onto a dicing film is laminated onto a cover film leaving a prescribed spacing, wherein a ratio Ea/Eb of the tensile storage modulus Ea of the adhesive film at 23° C. to the tensile storage modulus Eb of the cover film at 23° C. is in a range of 0.001 to 50.

Abstract: A dicing die-bonding film in which the adhesive properties during the dicing step and the peeling properties during the pickup step are controlled so that both become good, and a production method thereof, are provided. The dicing die-bonding film in the present invention is a dicing die-bonding film having a pressure-sensitive adhesive layer on a base material and a die bond layer on the pressure-sensitive adhesive layer, in which the arithmetic mean roughness X (?m) on the pressure-sensitive adhesive layer side in the die bond layer is 0.015 ?m to 1 ?m, the arithmetic mean roughness Y (?m) on the die bond layer side in the pressure-sensitive adhesive layer is 0.03 ?m to 1 ?m, and the absolute value of the difference of the X and Y is 0.015 or more.

Abstract: A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 ?m or less and a maximum height Rz of 1.0 ?m or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.

Abstract: The present invention provides a film for a semiconductor device, which is capable of preventing interface delamination between each of the films, a film lifting phenomenon, and transfer of the adhesive film onto the cover film even during transportation or after long-term storage in a low temperature condition. The film for a semiconductor device of the present invention is a film in which an adhesive film and a cover film are sequentially laminated on a dicing film, in which a peel force F1 between the adhesive film and the cover film in a T type peeling test is within a range of 0.025 to 0.075 N/100 mm, a peel force F2 between the adhesive film and the dicing film is within a range of 0.08 to 10 N/100 mm, and F1 and F2 satisfy a relationship of F1<F2.

Abstract: The present invention provides an adhesive film with a dicing sheet having a pressure-sensitive adhesive layer on a base material and also having a peelable adhesive film on the pressure-sensitive adhesive layer, that has an excellent peeling property when peeling a semiconductor chip obtained by dicing and an adhesive film attached thereto together without impairing the holding power even during dicing a thin semiconductor wafer, and a method of manufacturing the same. The adhesive film with a dicing sheet of the present invention is formed by sequentially laminating a pressure-sensitive adhesive layer and an adhesive layer on a base material, in which the intensity of an Si—K? ray on at least one region on a surface of the pressure-sensitive adhesive layer to be pasted onto the adhesive layer is 0.01 to 100 kcps.

Abstract: A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm2 as determined according to JIS K7127. Alternatively, the cleaning sheet includes a cleaning layer having a Vickers hardness of not lower than 10 MPa.

Abstract: A method of manufacturing a dicing die-bonding film having excellent adhesive properties during a dicing step and excellent peeling properties during a pickup. A method of manufacturing a dicing die-bonding film comprising a pressure-sensitive adhesive layer and an adhesive layer laminated sequentially on a base material, the method including the steps of forming the adhesive layer on a releasing film, the film containing an inorganic filler, having an arithmetic mean roughness Ra of 0.015 to 1 ?m, and having an uneven surface and bonding the pressure-sensitive adhesive layer and the adhesive layer provided on the base material under the conditions of a temperature of 30 to 50° C. and a pressure of 0.1 to 0.6 MPa and making the contact area of the pressure-sensitive adhesive layer and the adhesive layer be in the range of 35 to 90% to the bonding area.

Abstract: The present invention provides an adhesive sheet for manufacturing a semiconductor device, which, even when the adhesive sheet is made thin, makes it possible to easily identify the presence or absence of the adhesive sheet, thereby decreasing down time for the manufacturing apparatus and enabling an improvement of the yield, and to provide a semiconductor device manufacturing method using the sheet. The present invention relates to an adhesive sheet for manufacturing a semiconductor device which is used to adhere a semiconductor element to an adherend, wherein the adhesive sheet contains a pigment which adsorbs or reflects light having a wavelength in a range from 290 to 450 nm.

Abstract: A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm2 as determined according to JIS K7127. Alternatively, the cleaning sheet includes a cleaning layer having a Vickers hardness of not lower than 10 MPa.

Abstract: A present invention relates to a film for manufacturing a semiconductor device in which a cover film is pasted onto a laminated film, wherein the shrinkage in the longitudinal direction and in the lateral direction in the laminated film after peeling the cover film and leaving for 24 hours at a temperature of 23±2° C. is in a range of 0 to 2% compared to the laminated film before pasting of the cover film.

Abstract: An adhesive film for manufacturing a semiconductor device, which is to be finally removed in the method for manufacturing a semiconductor device, can be suitably used in the manufacture of a semiconductor device having a so-called standoff, wherein a part of a conductor projects from an encapsulation resin, and has excellent wire bonding property. The adhesive film includes a thermosetting adhesive layer, and the thermosetting adhesive layer includes a layered clay mineral, wherein the adhesive film is used in a method for manufacturing a semiconductor device including (a) embedding at least a part of a conductor in the adhesive film; (b) mounting a semiconductor chip on the conductor; (c) connecting the semiconductor chip to the conductor; (d) encapsulating the semiconductor chip with an encapsulation resin; and (e) removing the adhesive film therefrom.

Abstract: A dicing die-bonding film in which the adhesive properties during the dicing step and the peeling properties during the pickup step are controlled so that both become good, and a production method thereof, are provided. The dicing die-bonding film in the present invention is a dicing die-bonding film having a pressure-sensitive adhesive layer on a base material and a die bond layer on the pressure-sensitive adhesive layer, in which the arithmetic mean roughness X (?m) on the pressure-sensitive adhesive layer side in the die bond layer is 0.015 ?m to 1 ?m, the arithmetic mean roughness Y (?m) on the die bond layer side in the pressure-sensitive adhesive layer is 0.03 ?m to 1 ?m, and the absolute value of the difference of the X and Y is 0.015 or more.

Abstract: The present invention relates to an adhesive sheet for producing a semiconductor device, which is used when a semiconductor element is caused to adhere onto an adherend and the semiconductor element is wire-bonded, in which a lipophilic lamellar clay mineral is contained.

Abstract: The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.