Patents by Inventor Yasuhiro Goto

Yasuhiro Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240147289
    Abstract: A method of controlling an SDN system, an SDN sub-controller, and an SDN system is provided. The SDN controller sends a keepalive notification to the SDN switch and the SDN sub-controller. The SDN switch sends a switching request to the SDN sub-controller on condition that the keepalive notification cannot be received during a predetermined specific period. The SDN sub-controller starts to control a communication setting of the SDN switch on condition that the keepalive notification cannot be received during the specific period and that the switching request has been received.
    Type: Application
    Filed: October 18, 2023
    Publication date: May 2, 2024
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yasuhiro YAMASAKI, Hideki GOTO, Ikuyoshi OTAKE
  • Patent number: 11937263
    Abstract: A terminal apparatus and a method for communicating with a base station apparatus are provided. The method includes receiving Radio Resource Control (RRC) signaling and a first DCI format addressed to a Cell-Radio Network Temporary Identifier (C-RNTI); determining a first priority of a first uplink grant based on a priority field in the RRC signaling; and transmitting a first Physical Uplink Shared Channel (PUSCH) scheduled by the first uplink grant and a second PUSCH scheduled by a second uplink grant. The first uplink grant is a configured uplink grant notified by the RRC signaling. The second uplink grant is notified by the first DCI format.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: March 19, 2024
    Assignees: SHARP KABUSHIKI KAISHA, FG Innovation Company Limited
    Inventors: Jungo Goto, Osamu Nakamura, Seiji Sato, Yasuhiro Hamaguchi
  • Publication number: 20230342273
    Abstract: An information processing apparatus includes: a processor; a controller; a solid-state storage device; and a heat dissipation fan. The processor and the controller are connected with the solid-state storage device by using a bus, and the solid-state storage device is installed at a position corresponding to the heat dissipation fan. The processor acquires identification information of the solid-state storage device in association with location information indicating the position of the solid-state storage device, and the controller acquires identification information and a logical address of the solid-state storage device in advance, configures a reference table by associating location information corresponding to an identification number with a logical address corresponding to the identification information.
    Type: Application
    Filed: April 10, 2023
    Publication date: October 26, 2023
    Applicant: Lenovo (Singapore) Pte. Ltd.
    Inventors: Yusuke Taira, Yasuhiro Goto
  • Patent number: 11729907
    Abstract: A structure according to the embodiment includes a first crystal grain, a second crystal grain, and a first region. The first crystal grain includes silicon nitride. The second crystal grain includes a first element selected from a first group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, chromium, zirconium, magnesium, zinc, titanium, gallium, beryllium, calcium, strontium, barium, hafnium, vanadium, niobium, tantalum, tungsten, iron, cobalt, nickel, and copper, and oxygen. The first region includes an oxide of the first element.
    Type: Grant
    Filed: February 5, 2021
    Date of Patent: August 15, 2023
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Koichi Harada, Yasuhiro Goto, Kenji Essaki, Yasushi Hattori, Maki Yonetsu
  • Patent number: 11355416
    Abstract: A structure includes: a ? silicon nitride crystal phase; and a Y2MgSi2O5N crystal phase. The structure gives a X-ray diffraction pattern by a ?-2? method, the pattern having a ratio of a peak intensity of a (22-1) plane of the Y2MgSi2O5N crystal phase to a peak intensity of a (200) plane of the ? silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2?=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2?=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: June 7, 2022
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi Fukuda, Koichi Harada, Yasushi Hattori, Maki Yonetsu, Kenji Essaki, Keiko Albessard, Yasuhiro Goto
  • Publication number: 20220133776
    Abstract: Provided are a composition comprising a GAG derivative and a chemokine receptor activity regulator, and a pharmaceutical composition comprising said composition.
    Type: Application
    Filed: January 13, 2022
    Publication date: May 5, 2022
    Applicant: SEIKAGAKU CORPORATION
    Inventors: Tomochika KISUKEDA, Yasuhiro GOTO, Yuichi CHIKARAISHI, Takahiro HATANAKA
  • Patent number: 11253540
    Abstract: Provided are a composition comprising a GAG derivative and a chemokine receptor activity regulator, and a pharmaceutical composition comprising said composition.
    Type: Grant
    Filed: May 30, 2016
    Date of Patent: February 22, 2022
    Assignee: SEIKAGAKU CORPORATION
    Inventors: Tomochika Kisukeda, Yasuhiro Goto, Yuichi Chikaraishi, Takahiro Hatanaka
  • Publication number: 20210296205
    Abstract: A structure includes: a ? silicon nitride crystal phase; and a Y2MgSi2O5N crystal phase. The structure gives a X-ray diffraction pattern by a ?-2? method, the pattern having a ratio of a peak intensity of a (22-1) plane of the Y2MgSi2O5N crystal phase to a peak intensity of a (200) plane of the ? silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2?=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2?=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.
    Type: Application
    Filed: August 31, 2020
    Publication date: September 23, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi FUKUDA, Koichi HARADA, Yasushi HATTORI, Maki YONETSU, Kenji ESSAKI, Keiko ALBESSARD, Yasuhiro GOTO
  • Publication number: 20210166989
    Abstract: According to one embodiment, a structure according to the embodiment includes a ? type silicon nitride type crystal phase and a Y2Si3O3N4 type crystal phase. In an X-ray diffraction pattern according to a ?-2? method of the structure, a ratio of a second peak intensity being maximum and appearing at 2?=31.93±0.1° with respect to a first peak intensity being maximum and appearing at 2?=27.03±0.1° is 0.005 or more and 0.20 or less.
    Type: Application
    Filed: February 16, 2021
    Publication date: June 3, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi FUKUDA, Koichi HARADA, Kenji ESSAKI, Yasushi HATTORI, Yasuhiro GOTO, Keiko ALBESSARD, Maki YONETSU
  • Publication number: 20210161007
    Abstract: A structure according to the embodiment includes a first crystal grain, a second crystal grain, and a first region. The first crystal grain includes silicon nitride. The second crystal grain includes a first element selected from a first group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, chromium, zirconium, magnesium, zinc, titanium, gallium, beryllium, calcium, strontium, barium, hafnium, vanadium, niobium, tantalum, tungsten, iron, cobalt, nickel, and copper, and oxygen. The first region includes an oxide of the first element.
    Type: Application
    Filed: February 5, 2021
    Publication date: May 27, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Koichi HARADA, Yasuhiro GOTO, Kenji ESSAKI, Yasushi HATTORI, Maki YONETSU
  • Patent number: 10326129
    Abstract: The active material for a nonaqueous electrolyte secondary battery of the present embodiment includes a core particle and a carbon layer. The core particle is formed of silicon particles having a twinned crystal in part of a surface. The carbon layer coats the core particle.
    Type: Grant
    Filed: March 17, 2014
    Date of Patent: June 18, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Fukasawa, Kenji Essaki, Tomokazu Morita, Takashi Kuboki, Yasuhiro Goto
  • Publication number: 20190088384
    Abstract: A thermally conductive insulator consisting essentially of a silicon nitride member, comprise: a first region provided 10 ?m or more away from a first surface of the member along a depth direction in a section vertical to the first surface and containing at least one substance selected from the group consisting of silicon carbide and a carbon material; and a second region provided between the first surface and the first region. A concentration of silicon nitride of the second region is higher than a concentration of silicon nitride of the first region.
    Type: Application
    Filed: March 9, 2018
    Publication date: March 21, 2019
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takayuki FUKUSAWA, Keiko ALBESSARD, Takashi KUBOKI, Yasuhiro GOTO
  • Patent number: 10064189
    Abstract: To prevent occurring of cut of communication. An AV center 2 includes a wireless communication section 22, a power supply section 25 that is for supplying power supply voltage to respective sections, and a microcomputer 21. A wireless speaker 3 includes a wireless communication section 32, a power supply section 35 that is for supplying power supply voltage to respective sections, and a microcomputer 31. The microcomputers 21 and 31 supply power supply voltage to the wireless communication sections 22 and 32 by the power supply sections 25 and 35 when the microcomputer 21 of the AV center 2 receives setting of power OFF of an audio playback system 1. And, the microcomputers 21 and 31 perform wireless communication and monitor a channel of the DFS band by the wireless communication sections 22 and 32.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: August 28, 2018
    Assignee: Onkyo Corporation
    Inventor: Yasuhiro Goto
  • Publication number: 20180140628
    Abstract: Provided are a composition comprising a GAG derivative and a chemokine receptor activity regulator, and a pharmaceutical composition comprising said composition.
    Type: Application
    Filed: May 30, 2016
    Publication date: May 24, 2018
    Applicant: Seikagaku Corporation
    Inventors: Tomochika Kisukeda, Yasuhiro Goto, Yuichi Chikaraishi, Takahiro Hatanaka
  • Patent number: 9975099
    Abstract: A fuel synthesis catalyst of an embodiment for hydrogenating a gas includes at least one selected from the group consisting of; carbon dioxide and carbon monoxide, the catalyst comprising, a base material containing at least one oxide selected from the group consisting of; Al2O3, MgO, TiO2, and SiO2, first metals containing at least one metal selected from the group consisting of; Ni, Co, Fe, and Cu and brought into contact with the base material, and a first oxide containing at least one selected from the group consisting of; CeO2, ZrO2, TiO2, and SiO2 and having an interface with each of the first metals and the base material. The first metals exist on an outer surface of the base material, and on a surface of the base material in fine pores having opening ends on the outer surface of the base material and inside the base material. The first metals and the first oxide exist in the fine pores. The first metals have interfaces with the base material in the fine pores.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: May 22, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Fukasawa, Kenji Essaki, Shinsuke Matsuno, Takashi Kuboki, Yasuhiro Goto, Seiichi Suenaga
  • Publication number: 20180063845
    Abstract: To prevent occurring of cut of communication. An AV center 2 includes a wireless communication section 22, a power supply section 25 that is for supplying power supply voltage to respective sections, and a microcomputer 21. A wireless speaker 3 includes a wireless communication section 32, a power supply section 35 that is for supplying power supply voltage to respective sections, and a microcomputer 31. The microcomputers 21 and 31 supply power supply voltage to the wireless communication sections 22 and 32 by the power supply sections 25 and 35 when the microcomputer 21 of the AV center 2 receives setting of power OFF of an audio playback system 1. And, the microcomputers 21 and 31 perform wireless communication and monitor a channel of the DFS band by the wireless communication sections 22 and 32.
    Type: Application
    Filed: August 16, 2017
    Publication date: March 1, 2018
    Inventor: Yasuhiro GOTO
  • Patent number: 9859553
    Abstract: A negative electrode active material for a nonaqueous electrolyte secondary battery of an embodiment includes a carbonaceous material, a silicon oxide phase in the carbonaceous material, and a silicon phase in the silicon oxide phase. The negative electrode active material has a crack in the carbonaceous material, and the longest side of the crack has a length equal to or greater than ? of the diameter of the negative electrode active material.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: January 2, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomokazu Morita, Takashi Kuboki, Takayuki Fukasawa, Yasuyuki Hotta, Yasuhiro Goto, Toshiro Hiraoka
  • Patent number: 9859552
    Abstract: An electrode material for nonaqueous electrolyte secondary battery of an embodiment includes a silicon nanoparticle, and a coating layer coating the silicon nanoparticle. The coating layer includes an amorphous silicon oxide and a silicon carbide phase. At least a part of the silicon carbide phase exists on a surface of the silicon nanoparticle.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: January 2, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Fukasawa, Kenji Essaki, Tomokazu Morita, Takashi Kuboki, Mitsuhiro Oki, Yasuhiro Goto
  • Publication number: 20170266636
    Abstract: A fuel synthesis catalyst of an embodiment for hydrogenating a gas includes at least one selected from the group consisting of; carbon dioxide and carbon monoxide, the catalyst comprising, a base material containing at least one oxide selected from the group consisting of; Al2O3, MgO, TiO2, and SiO2, first metals containing at least one metal selected from the group consisting of; Ni, Co, Fe, and Cu and brought into contact with the base material, and a first oxide containing at least one selected from the group consisting of; CeO2, ZrO2, TiO2, and SiO2 and having an interface with each of the first metals and the base material. The first metals exist on an outer surface of the base material, and on a surface of the base material in fine pores having opening ends on the outer surface of the base material and inside the base material. The first metals and the first oxide exist in the fine pores. The first metals have interfaces with the base material in the fine pores.
    Type: Application
    Filed: March 13, 2017
    Publication date: September 21, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takayuki FUKASAWA, Kenji Essaki, Shinsuke Matsuno, Takashi Kuboki, Yasuhiro Goto, Seiichi SUENAGA
  • Publication number: 20170092942
    Abstract: The active material for a nonaqueous electrolyte secondary battery of the present embodiment includes a core particle and a carbon layer. The core particle is formed of silicon particles having a twinned crystal in part of a surface. The carbon layer coats the core particle.
    Type: Application
    Filed: March 17, 2014
    Publication date: March 30, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takayuki FUKASAWA, Kenji ESSAKI, Tomokazu MORITA, Takashi KUBOKI, Yasuhiro GOTO