Patent number: 11729907
Abstract: A structure according to the embodiment includes a first crystal grain, a second crystal grain, and a first region. The first crystal grain includes silicon nitride. The second crystal grain includes a first element selected from a first group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, chromium, zirconium, magnesium, zinc, titanium, gallium, beryllium, calcium, strontium, barium, hafnium, vanadium, niobium, tantalum, tungsten, iron, cobalt, nickel, and copper, and oxygen. The first region includes an oxide of the first element.
Type:
Grant
Filed:
February 5, 2021
Date of Patent:
August 15, 2023
Assignee:
KABUSHIKI KAISHA TOSHIBA
Inventors:
Koichi Harada, Yasuhiro Goto, Kenji Essaki, Yasushi Hattori, Maki Yonetsu
Publication number: 20210161007
Abstract: A structure according to the embodiment includes a first crystal grain, a second crystal grain, and a first region. The first crystal grain includes silicon nitride. The second crystal grain includes a first element selected from a first group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, chromium, zirconium, magnesium, zinc, titanium, gallium, beryllium, calcium, strontium, barium, hafnium, vanadium, niobium, tantalum, tungsten, iron, cobalt, nickel, and copper, and oxygen. The first region includes an oxide of the first element.
Type:
Application
Filed:
February 5, 2021
Publication date:
May 27, 2021
Applicant:
KABUSHIKI KAISHA TOSHIBA
Inventors:
Koichi HARADA, Yasuhiro GOTO, Kenji ESSAKI, Yasushi HATTORI, Maki YONETSU