Patents by Inventor Yasuhiro Iguchi

Yasuhiro Iguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9276145
    Abstract: An array-type light-receiving device includes a semiconductor substrate having a cleavage direction; a light-receiving surface disposed on the semiconductor substrate; and a plurality of pixels two-dimensionally arranged on the light-receiving surface in a first array direction and a second array direction, each of the pixels including a staked semiconductor layer including an optical absorption layer. The first and second array directions are tilted relative to the cleavage direction of the semiconductor substrate at a predetermined angle ?, as viewed from above the light-receiving surface. In addition, the first and second array directions and the cleavage direction extend along the light-receiving surface.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: March 1, 2016
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD
    Inventor: Yasuhiro Iguchi
  • Patent number: 9264645
    Abstract: An optical sensor apparatus includes a package having a window; a sensor chip having an array of light receiving devices and a pixel electrode connected to each light receiving device, the sensor chip having an incidence surface that faces the window of the package; and a read-out circuit disposed under the sensor chip, the read-out circuit having a read-out electrode electrically connected to each pixel electrode of the sensor chip. The sensor chip and the read-out circuit are housed in the package. In plan view from the sensor chip, the read-out circuit is overlapped by the sensor chip, and the read-out circuit has no portion extending off the sensor chip.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: February 16, 2016
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, INC.
    Inventors: Hiroshi Inada, Masaki Migita, Yasuhiro Iguchi
  • Publication number: 20150364618
    Abstract: A semiconductor light-receiving device includes a substrate having a principal surface including first and second areas; a post disposed on the first area, the post including a semiconductor mesa; and a resin layer disposed on the second area in contact with a side surface of the post. The resin layer has, on a ray extending from a first point within the first area through a second point within the second area, a first thickness and a second thickness respectively at a third point and a fourth point that are located within the second area at different distances from the first point. The distance from the first point to the fourth point is larger than the distance from the first point to the third point. The first thickness is larger than the second thickness. The resin layer has a surface that monotonically changes from the first thickness to the second thickness.
    Type: Application
    Filed: June 11, 2015
    Publication date: December 17, 2015
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yasuhiro IGUCHI
  • Publication number: 20150355026
    Abstract: An array type light-receiving device includes a plurality of pixels two-dimensionally arranged in a first direction and a second direction perpendicular to the first direction, each of the pixels including a light-receiving layer having a responsivity to a wavelength of light. The pixels arranged in the second direction constitute a plurality of pixel lines extending in the second direction, the plurality of pixel lines being arranged in the first direction to form an array. The pixels in each of the pixel lines have different pixel areas from each other. In addition, the pixel area of each of the pixels included in at least one of the pixel lines is determined in accordance with the responsivity to a wavelength of light received by each of the pixels.
    Type: Application
    Filed: June 1, 2015
    Publication date: December 10, 2015
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yasuhiro IGUCHI, Hiroshi INADA
  • Patent number: 9190544
    Abstract: A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate, and includes a pixel. The photodiode includes an absorption layer of a type II MQW structure, which is located on the substrate. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer has a higher potential of a valence band, is thinner than the thickness of the other layer.
    Type: Grant
    Filed: September 28, 2011
    Date of Patent: November 17, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kei Fujii, Takashi Ishizuka, Katsushi Akita, Yasuhiro Iguchi, Hiroshi Inada, Youichi Nagai
  • Publication number: 20150325726
    Abstract: An array-type light-receiving device includes a semiconductor substrate having a cleavage direction; a light-receiving surface disposed on the semiconductor substrate; and a plurality of pixels two-dimensionally arranged on the light-receiving surface in a first array direction and a second array direction, each of the pixels including a staked semiconductor layer including an optical absorption layer. The first and second array directions are tilted relative to the cleavage direction of the semiconductor substrate at a predetermined angle ?, as viewed from above the light-receiving surface. In addition, the first and second array directions and the cleavage direction extend along the light-receiving surface.
    Type: Application
    Filed: May 4, 2015
    Publication date: November 12, 2015
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yasuhiro IGUCHI
  • Publication number: 20150249108
    Abstract: An array-type light-receiving device includes a substrate including a main surface, a rear surface, and a plurality of recesses formed in the rear surface, the rear surface including an incident plane on which incident light is received; a stacked semiconductor layer disposed on the main surface of the substrate, the stacked semiconductor layer including a light-receiving layer; and a plurality of pixel regions each of which includes the light-receiving layer. The plurality of recesses are each depressed from the rear surface in a thickness direction of the substrate. In addition, each of the plurality of recesses has a bottom surface and a side surface, the bottom surface facing at least one of the plurality of pixel regions, the side surface including a tapered region inclined at a predetermined inclination angle with respect to an in-plane direction of the main surface.
    Type: Application
    Filed: February 25, 2015
    Publication date: September 3, 2015
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yasuhiro IGUCHI
  • Patent number: 9123605
    Abstract: An image sensor includes a package having a window; a sensor chip facing the window, the sensor chip having a pixel region, the sensor chip having an electrode; a read-out circuit disposed farther from the window than the sensor chip, the read-out circuit having a read-out electrode connected to the electrode of the sensor chip; and a shielding plate disposed outside the pixel region of the sensor chip. The shielding plate is configured to block transmission of light.
    Type: Grant
    Filed: June 5, 2014
    Date of Patent: September 1, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yasuhiro Iguchi, Hiroshi Inada, Masaki Migita
  • Publication number: 20150228825
    Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z??0.4x+24.6 is satisfied.
    Type: Application
    Filed: April 23, 2015
    Publication date: August 13, 2015
    Inventors: Kei Fujii, Katsushi Akita, Takashi Ishizuka, Hideaki Nakahata, Yasuhiro Iguchi, Hiroshi Inada, Youichi Nagai
  • Patent number: 9105804
    Abstract: A method for manufacturing a light-receiving device includes the steps of forming a stacked semiconductor layer including a non-doped light-receiving layer, the light-receiving layer having an n-type conductivity; forming a selective growth mask made of an insulating film on the stacked semiconductor layer, the selective growth mask having a pattern including a plurality of openings; selectively growing a selective growth layer doped with a p-type impurity on each portion of the stacked semiconductor layer by using the selective growth mask; and forming a p-n junction in each of plural regions of the light-receiving layer by diffusing the p-type impurity doped in each selective growth layer into the light-receiving layer during growing the selective growth layers. Each of the regions including one of the p-n junctions corresponds to one of the selective growth layers. The p-n junction in one of the regions is formed separately from the p-n junctions in the other regions.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: August 11, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yasuhiro Iguchi
  • Patent number: 9040955
    Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z??0.4x+24.6 is satisfied.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: May 26, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kei Fujii, Katsushi Akita, Takashi Ishizuka, Hideaki Nakahata, Yasuhiro Iguchi, Hiroshi Inada, Youichi Nagai
  • Patent number: 8969851
    Abstract: The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 ?m.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: March 3, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hiroshi Inada, Yasuhiro Iguchi, Youichi Nagai, Hiroki Mori, Kouhei Miura
  • Publication number: 20150035989
    Abstract: An optical sensor apparatus includes a package having a window; a sensor chip having an array of light receiving devices and a pixel electrode connected to the light receiving device, the sensor chip having an incidence surface that faces the window of the package; and a read-out circuit disposed under the sensor chip, the read-out circuit having a read-out electrode electrically connected to the pixel electrode of the sensor chip. The sensor chip and the read-out circuit are housed in the package. In plan view from the sensor chip, the read-out circuit is overlapped with the sensor chip, and the read-out circuit has no portion extending off the sensor chip.
    Type: Application
    Filed: July 31, 2014
    Publication date: February 5, 2015
    Inventors: HIROSHI INADA, Masaki MIGITA, Yasuhiro IGUCHI
  • Patent number: 8927965
    Abstract: A light-receiving element includes a III-V group compound semiconductor substrate, a light-receiving layer having a type II multi-quantum well structure disposed on the substrate, and a type I wavelength region reduction means for reducing light in a wavelength region of type I absorption in the type II multi-quantum well structure disposed on a light incident surface or between the light incident surface and the light-receiving layer.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: January 6, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuhiro Iguchi, Hiroshi Inada
  • Patent number: 8921829
    Abstract: The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.
    Type: Grant
    Filed: March 10, 2011
    Date of Patent: December 30, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuhiro Iguchi, Hiroshi Inada, Youichi Nagai, Hideaki Nakahata, Katsushi Akita, Takashi Ishizuka, Kei Fujii
  • Publication number: 20140367818
    Abstract: An image sensor includes a package having a window; a sensor chip facing the window, the sensor chip having a pixel region, the sensor chip having an electrode; a read-out circuit disposed farther from the window than the sensor chip, the read-out circuit having a read-out electrode connected to the electrode of the sensor chip; and a shielding plate disposed outside the pixel region of the sensor chip. The shielding plate is configured to block transmission of light.
    Type: Application
    Filed: June 5, 2014
    Publication date: December 18, 2014
    Inventors: Yasuhiro IGUCHI, Hiroshi INADA, Masaki MIGITA
  • Publication number: 20140319464
    Abstract: A light-receiving element includes a light-receiving layer for receiving light, the light-receiving layer being disposed on a semiconductor substrate, a contact layer disposed on the light-receiving layer, and a pixel electrode that is in ohmic contact with the contact layer. A back surface of the semiconductor substrate functions as a light-incident surface, and a reaction-preventing film for preventing a chemical reaction between the contact layer and the pixel electrode is interposed in a predetermined region between the contact layer and the pixel electrode.
    Type: Application
    Filed: June 11, 2012
    Publication date: October 30, 2014
    Inventor: Yasuhiro Iguchi
  • Publication number: 20140312304
    Abstract: Provided are a light receiving element etc. which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency. The light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 ?m, a middle layer that is epitaxially grown on the InP substrate, a GaSb buffer layer located in contact with the middle layer, and a light-receiving layer that is epitaxially grown on the GaSb buffer layer and that has a type-II multiple quantum well structure. The GaSb buffer layer is epitaxially grown on the middle layer while exceeding a range of a normal lattice-matching condition.
    Type: Application
    Filed: May 16, 2013
    Publication date: October 23, 2014
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kohei Miura, Hiroshi Inada, Yasuhiro Iguchi, Tadashi Saito
  • Patent number: 8822977
    Abstract: A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 ?m to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 ?m and 2.0 ?m. The ratio of the sensitivity at the wavelength of 1.3 ?m to the sensitivity at the wavelength of 2.0 ?m is not smaller than 0.5 but not larger than 1.6.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: September 2, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Katsushi Akita, Takashi Ishizuka, Kei Fujii, Hideaki Nakahata, Youichi Nagai, Hiroshi Inada, Yasuhiro Iguchi
  • Patent number: 8809985
    Abstract: A light receiving device includes a microlens 21 located in each of regions corresponding to pixels, the microlens being disposed on a rear surface of an InP substrate 1. The microlens is formed by using a resin material having a range of a transmittance of light in the wavelength region between 0.7 and 3 ?m of 25% or less, the transmittance being 70% or more.
    Type: Grant
    Filed: January 7, 2012
    Date of Patent: August 19, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuhiro Iguchi, Tadashi Saitoh, Yasushi Fujimura, Kazunori Tanaka