Abstract: A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode. Each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.

Abstract: A manufacturing method and a semiconductor device produced by the method are provided, in which the semiconductor device can easily be manufactured while the hydrogen concentration is decreased. An N-containing InGaAs layer 3 is grown on an InP substrate by the MBE method, and thereafter a heat treatment is provided at a temperature in the range of 600° C. or more and less than 800° C., whereby the average hydrogen concentration of the N-containing InGaAs layer 3 is made equal to or 2×1017/cm3 or less than.

Abstract: The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate 1, an N-containing InGaAs-based absorption layer 3 positioned above the InP substrate 1, a window layer 5 positioned above the N-containing InGaAs-based absorption layer 3, and an InGaAs buffer layer 4 positioned between the N-containing InGaAs-based absorption layer 3 and the window layer 5.

Abstract: A circumferential portion of an epitaxial wafer is removed to remove an anomalously grown elevated portion formed in a circumferential chamfer. An epitaxial layer in the circumferential portion is removed with a width q=t to 5t wherein t is the thickness of the epitaxial layer so that the surface of a substrate is exposed. Therefore, cracking of the epitaxial layer in processing steps can be prevented.

Abstract: There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 ?m.

Abstract: A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-t

Abstract: A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.

Abstract: A front-illuminated-type photodiode array comprises (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode placed at the rear-face side of the semi-conductor substrate, (c) a first-electroconductive-type absorption layer formed at the front-face side of the semiconductor substrate, (d) a plurality of second-electroconductive-type regions formed from the surface of the absorption layer to a certain distance into the absorption layer such that the regions are arranged one- or two-dimensionally, (e) a second-electroconductive-type electrode provided at part of each of the second-electroconductive-type regions, (f) an antireflective coating that covers the top surface other than the individual second-electroconductive-type electrodes and that is for preventing reflection of an incoming lightwave, and (g) at least one leakage-lightwave-absorbing layer that is provided between the first-electroconductive-type electrode and the absorption layer and that has an absorp

Abstract: A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode. Each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.

Abstract: The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed in a cap layer and the absorption layer, and a transmissive reflection film disposed on the back side of the semiconductor substrate. The semiconductor photodiode is mounted with the epitaxial layer side down, and the transmissive reflection film is irradiated with a laser beam emitted from the semiconductor laser element so that light reflected from the transmissive reflection film is used as output light, and transmitted light is received by the semiconductor photodiode and used for controlling the output of the semiconductor laser element.

Abstract: A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-t

Abstract: A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-t

Abstract: A front-illuminated-type photodiode array comprises (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode placed at the rear-face side of the semi-conductor substrate, (c) a first-electroconductive-type absorption layer formed at the front-face side of the semiconductor substrate, (d) a plurality of second-electroconductive-type regions formed from the surface of the absorption layer to a certain distance into the absorption layer such that the regions are arranged one- or two-dimensionally, (e) a second-electroconductive-type electrode provided at part of each of the second-electroconductive-type regions, (f) an antireflective coating that covers the top surface other than the individual second-electroconductive-type electrodes and that is for preventing reflection of an incoming lightwave, and (g) at least one leakage-lightwave-absorbing layer that is provided between the first-electroconductive-type electrode and the absorption layer and that has an absorp

Abstract: A method of depolymerizing polyethylene terephthalate, and a method of manufacturing a polyester resin. When heating, melting and depolymerizing polyethylene terephthalate to be recycled, the heating, melting and depolymerization reaction of the polyethylene terephthalate to be recycled are carried out all at once using one or a plurality of extruders or using an extruder and a reactor provided at an outlet of the extruder. When manufacturing a polyester resin, the reactants are irradiated with microwaves, thus promoting the heating of the reactants, and promoting the esterification reaction.

Abstract: A photodiode (A) comprises a substrate, a light receiving layer having a band gap wavelength and including a pn-junction and at least an absorption layer having a band gap wavelength ?g. One of the absorption layers is sandwiched between the substrate and the light receiving layer, the band gap wavelength ?g of the absorption layer is shorter than the receiving signal wavelength ?2 but longer than noise wavelength ?1(?1<?g<?2). Otherwise a photodiode (B) has two absorption layers epitaxially made on the substrate. One absorption layer is formed on the top surface of the substrate. The other absorption layer is formed on the bottom surface of the substrate. The absorption layers annihilate the noise ?1. The PD has no sensitivity to ?1.

Abstract: A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a direction of a predetermined axis. The light detecting portion has a light absorbing layer including a III-V semiconductor layer, a window layer including a III-V semiconductor layer, and an anode semiconductor region. The light absorbing layer is an n or i conductivity type semiconductor layer. The light absorbing layer is provided between a III-V semiconductor layer and the window layer. The light detecting portion is provided on one face of the semiconductor substrate with the III-V semiconductor layer interposed therebetween. The filter portion includes InGaAsP semiconductor layers and III-V semiconductor layers.

Abstract: Provided is a method of heating a semiconductor substrate having a surface of a III-V compound semiconductor containing phosphorus as a group V constituent element. The method comprises the steps of: (a) providing an alloy in a heating furnace, the alloy including tin, indium, and phosphorus as main constituents; and (b) raising a temperature of the article in an atmosphere containing vapor of phosphorus supplied from the alloy.

Abstract: A photodiode that is used in an optical communication system using two different wavelengths, &lgr;1 and &lgr;2 (&lgr;1<&lgr;2), and that enables a reduction in the optical crosstalk caused by outgoing light having a longer wavelengths, &lgr;2. A photodiode that receives light having a shorter wavelengths, &lgr;1, is provided with an absorption layer made of a material having a bandgap wavelength, &lgr;g. (&lgr;1<&lgr;g<&lgr;2), to detect the light having &lgr;1. A filter layer that absorbs unwanted light having &lgr;2 is provided over the absorption layer so that the light having &lgr;2 cannot return to the absorption layer after passing through it once.

Abstract: The present invention relates to a high-sensitivity top-electrode and bottom-illuminated type photodiode. The device consists of a highly doped buffer layer, a photo-detecting layer on a semi-insulating substrate. An electrode is formed on the conductive domain that is formed in the photo-detecting layer, and another electrode is formed on the partly exposed peripheral area of the highly-doped buffer layer by removing a part of the photo-detecting layer. As the semi-insulating substrate absorbs less light in the substrate, a decrease of sensitivity by the substrate absorption can be prevented.

Abstract: Provided is a method of heating a semiconductor substrate having a surface of a III-V compound semiconductor containing phosphorus as a group V constituent element. The method comprises the steps of: (a) providing an alloy in a heating furnace, the alloy including tin, indium, and phosphorus as main constituents; and (b) raising a temperature of the article in an atmosphere containing vapor of phosphorus supplied from the alloy.